FR2878067B1 - Dispositif de lecture faible tension notamment pour memoire mram - Google Patents

Dispositif de lecture faible tension notamment pour memoire mram

Info

Publication number
FR2878067B1
FR2878067B1 FR0412194A FR0412194A FR2878067B1 FR 2878067 B1 FR2878067 B1 FR 2878067B1 FR 0412194 A FR0412194 A FR 0412194A FR 0412194 A FR0412194 A FR 0412194A FR 2878067 B1 FR2878067 B1 FR 2878067B1
Authority
FR
France
Prior art keywords
low voltage
read device
mram memory
voltage read
mram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0412194A
Other languages
English (en)
Other versions
FR2878067A1 (fr
Inventor
Jean Lasseuguette
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0412194A priority Critical patent/FR2878067B1/fr
Priority to US11/281,264 priority patent/US20060171227A1/en
Publication of FR2878067A1 publication Critical patent/FR2878067A1/fr
Application granted granted Critical
Publication of FR2878067B1 publication Critical patent/FR2878067B1/fr
Priority to US11/701,247 priority patent/US20070217265A1/en
Priority to US12/033,795 priority patent/US7466595B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Read Only Memory (AREA)
  • Hall/Mr Elements (AREA)
FR0412194A 2004-11-17 2004-11-17 Dispositif de lecture faible tension notamment pour memoire mram Expired - Fee Related FR2878067B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0412194A FR2878067B1 (fr) 2004-11-17 2004-11-17 Dispositif de lecture faible tension notamment pour memoire mram
US11/281,264 US20060171227A1 (en) 2004-11-17 2005-11-17 Low-voltage reading device in particular for MRAM memory
US11/701,247 US20070217265A1 (en) 2004-11-17 2007-02-01 Low-voltage reading device in particular for MRAM memory
US12/033,795 US7466595B2 (en) 2004-11-17 2008-02-19 Low-voltage reading device in particular for MRAM memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0412194A FR2878067B1 (fr) 2004-11-17 2004-11-17 Dispositif de lecture faible tension notamment pour memoire mram

Publications (2)

Publication Number Publication Date
FR2878067A1 FR2878067A1 (fr) 2006-05-19
FR2878067B1 true FR2878067B1 (fr) 2007-01-26

Family

ID=34951959

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0412194A Expired - Fee Related FR2878067B1 (fr) 2004-11-17 2004-11-17 Dispositif de lecture faible tension notamment pour memoire mram

Country Status (2)

Country Link
US (3) US20060171227A1 (fr)
FR (1) FR2878067B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7707467B2 (en) * 2007-02-23 2010-04-27 Micron Technology, Inc. Input/output compression and pin reduction in an integrated circuit
US8228714B2 (en) 2008-09-09 2012-07-24 Qualcomm Incorporated Memory device for resistance-based memory applications
CN102186581B (zh) * 2008-10-17 2013-11-20 优美科触媒日本有限公司 废气净化用催化剂以及使用该催化剂的净化方法
US8743630B2 (en) * 2011-05-23 2014-06-03 Infineon Technologies Ag Current sense amplifier with replica bias scheme
US9111622B2 (en) * 2012-05-09 2015-08-18 Everspin Technologies, Inc. Self referencing sense amplifier for spin torque MRAM
KR20150116072A (ko) * 2014-04-04 2015-10-15 에스케이하이닉스 주식회사 전자 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0805454A1 (fr) * 1996-04-30 1997-11-05 STMicroelectronics S.r.l. Circuit de détection pour lecture et vérification du contenu d'une cellule de mémoire
EP0814483B1 (fr) * 1996-06-18 2003-08-27 STMicroelectronics S.r.l. Procédé et circuit de lecture pour cellules de mémoire non-volatiles, avec circuit d'égalisation
US6600690B1 (en) * 2002-06-28 2003-07-29 Motorola, Inc. Sense amplifier for a memory having at least two distinct resistance states

Also Published As

Publication number Publication date
FR2878067A1 (fr) 2006-05-19
US20070217265A1 (en) 2007-09-20
US20060171227A1 (en) 2006-08-03
US7466595B2 (en) 2008-12-16
US20080137430A1 (en) 2008-06-12

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070731