DE602004017943D1 - Magnetowiderstandseffekt-Film, Magnetowiderstandseffekt-Kopf und Festzustandspeicher - Google Patents
Magnetowiderstandseffekt-Film, Magnetowiderstandseffekt-Kopf und FestzustandspeicherInfo
- Publication number
- DE602004017943D1 DE602004017943D1 DE602004017943T DE602004017943T DE602004017943D1 DE 602004017943 D1 DE602004017943 D1 DE 602004017943D1 DE 602004017943 T DE602004017943 T DE 602004017943T DE 602004017943 T DE602004017943 T DE 602004017943T DE 602004017943 D1 DE602004017943 D1 DE 602004017943D1
- Authority
- DE
- Germany
- Prior art keywords
- magnetoresistance effect
- solid state
- state memory
- head
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003310946A JP2005079487A (ja) | 2003-09-03 | 2003-09-03 | 磁気抵抗効果膜並びにこれを用いた磁気抵抗効果ヘッドおよび固体メモリ |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004017943D1 true DE602004017943D1 (de) | 2009-01-08 |
Family
ID=34131831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004017943T Expired - Fee Related DE602004017943D1 (de) | 2003-09-03 | 2004-06-18 | Magnetowiderstandseffekt-Film, Magnetowiderstandseffekt-Kopf und Festzustandspeicher |
Country Status (6)
Country | Link |
---|---|
US (1) | US7154717B2 (de) |
EP (1) | EP1513167B1 (de) |
JP (1) | JP2005079487A (de) |
KR (1) | KR100635316B1 (de) |
CN (1) | CN1284144C (de) |
DE (1) | DE602004017943D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070035889A1 (en) * | 2004-04-02 | 2007-02-15 | Tdk Corporation | Spin valve magnetoresistive sensor in current perpendicular to plane scheme |
US7900342B2 (en) * | 2007-02-23 | 2011-03-08 | Hitachi Global Storage Technologies Netherlands, B.V. | Methods of fabricating magnetoresistance sensors pinned by an etch induced magnetic anisotropy |
US20090168269A1 (en) * | 2007-12-28 | 2009-07-02 | Matthew Joseph Carey | Current perpendicular to plane spin valve with high-polarization material in ap1 layer for reduced spin torque |
JP2009283094A (ja) * | 2008-05-26 | 2009-12-03 | Fujitsu Ltd | 磁気ヘッドおよび磁気ディスク装置 |
US8493693B1 (en) | 2012-03-30 | 2013-07-23 | Western Digital (Fremont), Llc | Perpendicular magnetic recording transducer with AFM insertion layer |
US9361913B1 (en) | 2013-06-03 | 2016-06-07 | Western Digital (Fremont), Llc | Recording read heads with a multi-layer AFM layer methods and apparatuses |
EP3314675A4 (de) * | 2015-06-26 | 2019-05-29 | Intel Corporation | Magnetspeicher mit geringem streufeld |
US10944050B2 (en) * | 2018-05-08 | 2021-03-09 | Applied Materials, Inc. | Magnetic tunnel junction structures and methods of manufacture thereof |
CN112310271B (zh) * | 2019-07-25 | 2023-04-07 | 上海磁宇信息科技有限公司 | 磁性随机存储器的磁性隧道结结构 |
CN111929625B (zh) * | 2020-08-13 | 2023-03-28 | 中国科学院微电子研究所 | 磁场传感器及测试方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3207790A (en) * | 1961-07-06 | 1965-09-21 | Dow Chemical Co | Process for reducing the color of discolored alkanolamines |
US3819710A (en) * | 1973-01-04 | 1974-06-25 | Olin Corp | Process for improving color and color stability of ethanolamines |
US5847221A (en) * | 1993-06-28 | 1998-12-08 | Union Carbide Chemicals & Plastics Technology Corporation | Method for decolorization of alkanolamines and alkyleneamines |
US5465185A (en) | 1993-10-15 | 1995-11-07 | International Business Machines Corporation | Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor |
JPH11185219A (ja) | 1997-12-17 | 1999-07-09 | Hitachi Ltd | 磁気抵抗効果型磁気ヘッド及び磁気記録再生装置 |
JP3235572B2 (ja) * | 1998-09-18 | 2001-12-04 | 日本電気株式会社 | 磁気抵抗効果素子,磁気抵抗効果センサ及びそれらを利用したシステム |
DE19855383A1 (de) * | 1998-12-01 | 2000-06-08 | Basf Ag | Verfahren zur Reinigung von Triethanolamin |
US6222707B1 (en) * | 1998-12-28 | 2001-04-24 | Read-Rite Corporation | Bottom or dual spin valve having a seed layer that results in an improved antiferromagnetic layer |
DE19942300A1 (de) * | 1999-09-04 | 2001-03-08 | Basf Ag | Verfahren zur Herstellung von Alkanolaminen mit verbesserter Farbqualität |
DE10011942A1 (de) * | 2000-03-11 | 2001-09-13 | Basf Ag | Verfahren zur Herstellung von Alkanolaminen mit verbesserter Farbqualität |
US6773515B2 (en) * | 2002-01-16 | 2004-08-10 | Headway Technologies, Inc. | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures |
US6707084B2 (en) * | 2002-02-06 | 2004-03-16 | Micron Technology, Inc. | Antiferromagnetically stabilized pseudo spin valve for memory applications |
US6774264B2 (en) * | 2002-12-06 | 2004-08-10 | Air Products And Chemicals, Inc. | Catalyst to improve the color stability of N,N-dialkylalkanolamines |
US7038890B2 (en) * | 2003-07-29 | 2006-05-02 | Hitachi Global Storage Technologies Netherlands B.V. | Current perpendicular to the planes (CPP) sensor with a highly conductive cap structure |
US6974708B2 (en) * | 2004-04-08 | 2005-12-13 | Headway Technologies, Inc. | Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM |
US7331100B2 (en) * | 2004-07-07 | 2008-02-19 | Headway Technologies, Inc. | Process of manufacturing a seed/AFM combination for a CPP GMR device |
-
2003
- 2003-09-03 JP JP2003310946A patent/JP2005079487A/ja active Pending
-
2004
- 2004-02-06 US US10/773,902 patent/US7154717B2/en not_active Expired - Fee Related
- 2004-06-18 DE DE602004017943T patent/DE602004017943D1/de not_active Expired - Fee Related
- 2004-06-18 EP EP04014336A patent/EP1513167B1/de not_active Expired - Fee Related
- 2004-07-15 KR KR1020040055174A patent/KR100635316B1/ko not_active IP Right Cessation
- 2004-07-27 CN CNB2004100586654A patent/CN1284144C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1284144C (zh) | 2006-11-08 |
KR100635316B1 (ko) | 2006-10-18 |
JP2005079487A (ja) | 2005-03-24 |
EP1513167A2 (de) | 2005-03-09 |
US20050047029A1 (en) | 2005-03-03 |
CN1591580A (zh) | 2005-03-09 |
KR20050025238A (ko) | 2005-03-14 |
EP1513167A3 (de) | 2005-09-07 |
US7154717B2 (en) | 2006-12-26 |
EP1513167B1 (de) | 2008-11-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |
|
8339 | Ceased/non-payment of the annual fee |