DE602004010055D1 - Nichtflüchtiger Halbleiterspeicher und dessen Betriebsverfahren - Google Patents
Nichtflüchtiger Halbleiterspeicher und dessen BetriebsverfahrenInfo
- Publication number
- DE602004010055D1 DE602004010055D1 DE602004010055T DE602004010055T DE602004010055D1 DE 602004010055 D1 DE602004010055 D1 DE 602004010055D1 DE 602004010055 T DE602004010055 T DE 602004010055T DE 602004010055 T DE602004010055 T DE 602004010055T DE 602004010055 D1 DE602004010055 D1 DE 602004010055D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- operating method
- volatile semiconductor
- volatile
- operating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000011017 operating method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/757,073 US7031196B2 (en) | 2002-03-29 | 2004-01-14 | Nonvolatile semiconductor memory and operating method of the memory |
US757073 | 2004-01-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602004010055D1 true DE602004010055D1 (de) | 2007-12-27 |
DE602004010055T2 DE602004010055T2 (de) | 2008-09-04 |
Family
ID=34620678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004010055T Active DE602004010055T2 (de) | 2004-01-14 | 2004-09-27 | Nichtflüchtige Halbleiterspeicherzelle und dessen Betriebsverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US7031196B2 (de) |
EP (1) | EP1555673B1 (de) |
JP (1) | JP4801897B2 (de) |
CN (1) | CN1670943B (de) |
DE (1) | DE602004010055T2 (de) |
TW (1) | TWI247310B (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7760554B2 (en) * | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US7639542B2 (en) * | 2006-05-15 | 2009-12-29 | Apple Inc. | Maintenance operations for multi-level data storage cells |
US20080031052A1 (en) * | 2006-08-01 | 2008-02-07 | Macronix International Co., Ltd. | A double-bias erase method for memory devices |
US7596030B2 (en) * | 2006-08-01 | 2009-09-29 | Macronix International Co., Ltd. | Method for improving memory device cycling endurance by providing additional pulse |
TWI389321B (zh) * | 2008-07-08 | 2013-03-11 | Acer Inc | 程式化非揮發性記憶體之方法 |
KR101466697B1 (ko) * | 2008-07-10 | 2014-12-01 | 삼성전자주식회사 | 메모리 장치 및 메모리 데이터 프로그래밍 방법 |
JP5143655B2 (ja) * | 2008-07-22 | 2013-02-13 | スパンション エルエルシー | 半導体装置へのデータ書き込み方法、半導体装置 |
US7715235B2 (en) * | 2008-08-25 | 2010-05-11 | Sandisk Corporation | Non-volatile memory and method for ramp-down programming |
TWI590249B (zh) * | 2010-12-03 | 2017-07-01 | 半導體能源研究所股份有限公司 | 積體電路,其驅動方法,及半導體裝置 |
US9589639B1 (en) | 2015-11-04 | 2017-03-07 | International Business Machines Corporation | Multiple FET non-volatile memory with default logical state |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5526307A (en) * | 1992-01-22 | 1996-06-11 | Macronix International Co., Ltd. | Flash EPROM integrated circuit architecture |
JP3348466B2 (ja) * | 1992-06-09 | 2002-11-20 | セイコーエプソン株式会社 | 不揮発性半導体装置 |
JP2901493B2 (ja) | 1994-06-27 | 1999-06-07 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
JP3162264B2 (ja) * | 1995-05-30 | 2001-04-25 | シャープ株式会社 | フラッシュメモリの書換え方法 |
JP3123924B2 (ja) | 1996-06-06 | 2001-01-15 | 三洋電機株式会社 | 不揮発性半導体メモリ |
US5768192A (en) | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
US6252799B1 (en) | 1997-04-11 | 2001-06-26 | Programmable Silicon Solutions | Device with embedded flash and EEPROM memories |
US5953255A (en) * | 1997-12-24 | 1999-09-14 | Aplus Flash Technology, Inc. | Low voltage, low current hot-hole injection erase and hot-electron programmable flash memory with enhanced endurance |
US6348711B1 (en) * | 1998-05-20 | 2002-02-19 | Saifun Semiconductors Ltd. | NROM cell with self-aligned programming and erasure areas |
JP2000200842A (ja) | 1998-11-04 | 2000-07-18 | Sony Corp | 不揮発性半導体記憶装置、製造方法および書き込み方法 |
US5953251A (en) * | 1998-12-18 | 1999-09-14 | Motorola, Inc. | Programming method for nonvolatile memories |
KR100308192B1 (ko) * | 1999-07-28 | 2001-11-01 | 윤종용 | 플래시 메모리 셀들의 과소거를 방지할 수 있는 플래시 메모리장치 및 그것의 소거 방법 |
US6265268B1 (en) | 1999-10-25 | 2001-07-24 | Advanced Micro Devices, Inc. | High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device |
US6331953B1 (en) * | 2000-02-16 | 2001-12-18 | Advanced Micro Devices | Intelligent ramped gate and ramped drain erasure for non-volatile memory cells |
US6381179B1 (en) | 2000-02-24 | 2002-04-30 | Advanced Micro Devices, Inc. | Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure |
JP4834897B2 (ja) | 2000-05-02 | 2011-12-14 | ソニー株式会社 | 不揮発性半導体記憶装置およびその動作方法 |
US6400610B1 (en) * | 2000-07-05 | 2002-06-04 | Motorola, Inc. | Memory device including isolated storage elements that utilize hole conduction and method therefor |
US7352024B2 (en) * | 2001-02-22 | 2008-04-01 | Sharp Kabushiki Kaisha | Semiconductor storage device and semiconductor integrated circuit |
WO2002097821A1 (fr) * | 2001-05-25 | 2002-12-05 | Fujitsu Limited | Dispositif de stockage non volatile a semi-conducteur |
US6670240B2 (en) * | 2001-08-13 | 2003-12-30 | Halo Lsi, Inc. | Twin NAND device structure, array operations and fabrication method |
JP2003152115A (ja) * | 2001-11-16 | 2003-05-23 | Ememory Technology Inc | 嵌入式フラッシュメモリ構造及び操作方法 |
JP2003158207A (ja) * | 2001-11-26 | 2003-05-30 | Sony Corp | 不揮発性半導体メモリ装置とその動作方法 |
US6690601B2 (en) * | 2002-03-29 | 2004-02-10 | Macronix International Co., Ltd. | Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same |
US6657894B2 (en) * | 2002-03-29 | 2003-12-02 | Macronix International Co., Ltd, | Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cells |
US6614694B1 (en) * | 2002-04-02 | 2003-09-02 | Macronix International Co., Ltd. | Erase scheme for non-volatile memory |
US6801453B2 (en) * | 2002-04-02 | 2004-10-05 | Macronix International Co., Ltd. | Method and apparatus of a read scheme for non-volatile memory |
-
2004
- 2004-01-14 US US10/757,073 patent/US7031196B2/en not_active Expired - Lifetime
- 2004-09-27 DE DE602004010055T patent/DE602004010055T2/de active Active
- 2004-09-27 EP EP04022958A patent/EP1555673B1/de not_active Expired - Fee Related
- 2004-10-27 TW TW093132512A patent/TWI247310B/zh active
- 2004-11-10 CN CN2004100858540A patent/CN1670943B/zh not_active Expired - Fee Related
- 2004-11-18 JP JP2004334353A patent/JP4801897B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7031196B2 (en) | 2006-04-18 |
JP4801897B2 (ja) | 2011-10-26 |
US20040156238A1 (en) | 2004-08-12 |
CN1670943B (zh) | 2012-06-20 |
EP1555673B1 (de) | 2007-11-14 |
JP2005203075A (ja) | 2005-07-28 |
TWI247310B (en) | 2006-01-11 |
CN1670943A (zh) | 2005-09-21 |
TW200523930A (en) | 2005-07-16 |
DE602004010055T2 (de) | 2008-09-04 |
EP1555673A1 (de) | 2005-07-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |