DE602004013816D1 - Phasenwechselspeicher und Herstellungsmethode dafür - Google Patents

Phasenwechselspeicher und Herstellungsmethode dafür

Info

Publication number
DE602004013816D1
DE602004013816D1 DE602004013816T DE602004013816T DE602004013816D1 DE 602004013816 D1 DE602004013816 D1 DE 602004013816D1 DE 602004013816 T DE602004013816 T DE 602004013816T DE 602004013816 T DE602004013816 T DE 602004013816T DE 602004013816 D1 DE602004013816 D1 DE 602004013816D1
Authority
DE
Germany
Prior art keywords
manufacturing
phase change
change memory
memory
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004013816T
Other languages
English (en)
Inventor
Ilya V Karpov
Charles C Kuo
Yudong Kim
Greg Atwood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE602004013816D1 publication Critical patent/DE602004013816D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE602004013816T 2004-12-30 2004-12-30 Phasenwechselspeicher und Herstellungsmethode dafür Active DE602004013816D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04107071A EP1677372B1 (de) 2004-12-30 2004-12-30 Phasenwechselspeicher und Herstellungsmethode dafür

Publications (1)

Publication Number Publication Date
DE602004013816D1 true DE602004013816D1 (de) 2008-06-26

Family

ID=34930199

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004013816T Active DE602004013816D1 (de) 2004-12-30 2004-12-30 Phasenwechselspeicher und Herstellungsmethode dafür

Country Status (5)

Country Link
US (1) US7709822B2 (de)
EP (1) EP1677372B1 (de)
CN (1) CN101142695B (de)
DE (1) DE602004013816D1 (de)
WO (1) WO2006069933A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9178141B2 (en) 2006-04-04 2015-11-03 Micron Technology, Inc. Memory elements using self-aligned phase change material layers and methods of manufacturing same
US7812334B2 (en) * 2006-04-04 2010-10-12 Micron Technology, Inc. Phase change memory elements using self-aligned phase change material layers and methods of making and using same
JP4267013B2 (ja) * 2006-09-12 2009-05-27 エルピーダメモリ株式会社 半導体装置の製造方法
DE602007013386D1 (de) * 2007-07-17 2011-05-05 St Microelectronics Srl Verfahren zur Herstellung eines kupferkompatiblen Phasenwechselspeicherelements und entsprechendes Phasenwechselspeicherelement
US9203024B2 (en) * 2007-07-25 2015-12-01 Intel Corporation Copper compatible chalcogenide phase change memory with adjustable threshold voltage
JP4929228B2 (ja) * 2008-01-23 2012-05-09 韓國電子通信研究院 相変化メモリー素子及びその製造方法
CN102315386B (zh) * 2010-07-06 2013-10-30 中芯国际集成电路制造(上海)有限公司 相变存储器存储单元的制作方法
US8243506B2 (en) 2010-08-26 2012-08-14 Micron Technology, Inc. Phase change memory structures and methods
US8574954B2 (en) * 2010-08-31 2013-11-05 Micron Technology, Inc. Phase change memory structures and methods
US8685783B2 (en) 2010-10-27 2014-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Phase change memory cell
CN102468429B (zh) * 2010-11-05 2014-02-12 中芯国际集成电路制造(北京)有限公司 相变随机存储器的制造方法
CN102468428A (zh) * 2010-11-05 2012-05-23 中芯国际集成电路制造(上海)有限公司 相变随机存储器的制造方法
CN103151458B (zh) * 2013-03-22 2015-04-29 厦门博佳琴电子科技有限公司 一种嵌入式相变化存储器阵列及制造方法
US9153777B2 (en) * 2013-06-03 2015-10-06 Micron Technology, Inc. Thermally optimized phase change memory cells and methods of fabricating the same
KR20150007520A (ko) * 2013-07-11 2015-01-21 에스케이하이닉스 주식회사 상변화 메모리 장치 및 그의 제조방법
CN104900806B (zh) * 2015-06-04 2018-06-05 江苏时代全芯存储科技有限公司 相变化记忆体元件的制造方法
CN105098071B (zh) * 2015-07-08 2018-01-05 江苏时代全芯存储科技有限公司 制造相变化记忆体的方法
US10424619B2 (en) 2016-01-13 2019-09-24 Samsung Electronics Co., Ltd. Variable resistance memory devices and methods of manufacturing the same
KR102446863B1 (ko) 2016-02-22 2022-09-23 삼성전자주식회사 메모리 소자 및 그 제조방법
KR102530067B1 (ko) * 2016-07-28 2023-05-08 삼성전자주식회사 가변 저항 메모리 소자 및 그 제조 방법
KR102295524B1 (ko) 2017-03-27 2021-08-30 삼성전자 주식회사 메모리 소자
US11910731B2 (en) * 2021-02-10 2024-02-20 International Business Machines Corporation Embedded heater in a phase change memory material

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD251225A1 (de) * 1986-07-18 1987-11-04 Karl Marx Stadt Tech Hochschul Entkoppelte anordnung amorpher speicherelemente
US5789758A (en) * 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
US6744088B1 (en) * 2002-12-13 2004-06-01 Intel Corporation Phase change memory device on a planar composite layer
EP1475840B1 (de) * 2003-05-07 2006-07-19 STMicroelectronics S.r.l. Verfahren zur Herstellung einer elektrischen Speichereinrichtung mit Auswahltransistoren für Speicherelemente sowie entsprechend hergestellte Speichereinrichtung
US7135696B2 (en) * 2004-09-24 2006-11-14 Intel Corporation Phase change memory with damascene memory element

Also Published As

Publication number Publication date
CN101142695B (zh) 2010-12-08
EP1677372B1 (de) 2008-05-14
CN101142695A (zh) 2008-03-12
WO2006069933A1 (en) 2006-07-06
EP1677372A1 (de) 2006-07-05
US20080029752A1 (en) 2008-02-07
US7709822B2 (en) 2010-05-04

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