ATE328350T1 - Speicherleseverstärker mit mindesten zwei bestimmten widerständen - Google Patents

Speicherleseverstärker mit mindesten zwei bestimmten widerständen

Info

Publication number
ATE328350T1
ATE328350T1 AT03724488T AT03724488T ATE328350T1 AT E328350 T1 ATE328350 T1 AT E328350T1 AT 03724488 T AT03724488 T AT 03724488T AT 03724488 T AT03724488 T AT 03724488T AT E328350 T1 ATE328350 T1 AT E328350T1
Authority
AT
Austria
Prior art keywords
conductance
memory
bit
cell
sense
Prior art date
Application number
AT03724488T
Other languages
English (en)
Inventor
Joseph J Nahas
Thomas W Andre
Bradley J Garni
Chitra K Subramanian
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of ATE328350T1 publication Critical patent/ATE328350T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Networks Using Active Elements (AREA)
  • Dram (AREA)
  • Amplifiers (AREA)
  • Secondary Cells (AREA)
  • Laminated Bodies (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
AT03724488T 2002-06-28 2003-05-01 Speicherleseverstärker mit mindesten zwei bestimmten widerständen ATE328350T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/184,784 US6600690B1 (en) 2002-06-28 2002-06-28 Sense amplifier for a memory having at least two distinct resistance states

Publications (1)

Publication Number Publication Date
ATE328350T1 true ATE328350T1 (de) 2006-06-15

Family

ID=27612984

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03724488T ATE328350T1 (de) 2002-06-28 2003-05-01 Speicherleseverstärker mit mindesten zwei bestimmten widerständen

Country Status (10)

Country Link
US (1) US6600690B1 (de)
EP (1) EP1576610B1 (de)
JP (1) JP4283769B2 (de)
KR (1) KR20050013649A (de)
CN (1) CN1717741B (de)
AT (1) ATE328350T1 (de)
AU (1) AU2003230284A1 (de)
DE (1) DE60305736T2 (de)
TW (1) TWI299871B (de)
WO (1) WO2004003925A2 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4071531B2 (ja) * 2002-04-23 2008-04-02 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
KR100496858B1 (ko) * 2002-08-02 2005-06-22 삼성전자주식회사 비트라인 클램핑 전압에 상관없이 기준 셀로 일정 전류가흐르는 마그네틱 랜덤 억세스 메모리
FR2846776A1 (fr) * 2002-10-30 2004-05-07 St Microelectronics Sa Cellule memoire a trois etats
JP2004164766A (ja) * 2002-11-14 2004-06-10 Renesas Technology Corp 不揮発性記憶装置
JP4365604B2 (ja) * 2003-03-24 2009-11-18 Ｔｄｋ株式会社 磁気メモリデバイスおよびセンスアンプ回路、ならびに磁気メモリデバイスの読出方法
US6985383B2 (en) * 2003-10-20 2006-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Reference generator for multilevel nonlinear resistivity memory storage elements
KR100528341B1 (ko) * 2003-12-30 2005-11-15 삼성전자주식회사 자기 램 및 그 읽기방법
WO2005096315A2 (en) * 2004-04-01 2005-10-13 Koninklijke Philips Electronics N.V. Thermally stable reference voltage generator for mram
US7038959B2 (en) * 2004-09-17 2006-05-02 Freescale Semiconductor, Inc. MRAM sense amplifier having a precharge circuit and method for sensing
US7423897B2 (en) * 2004-10-01 2008-09-09 Ovonyx, Inc. Method of operating a programmable resistance memory array
FR2878067B1 (fr) * 2004-11-17 2007-01-26 St Microelectronics Sa Dispositif de lecture faible tension notamment pour memoire mram
KR100684472B1 (ko) * 2005-02-18 2007-02-22 한국전자통신연구원 네거티브 전압 레벨 감지기
CN1937071B (zh) * 2005-09-22 2010-10-13 中芯国际集成电路制造(上海)有限公司 用于存储器系统的高性能读出放大器及相应的方法
US7292466B2 (en) * 2006-01-03 2007-11-06 Infineon Technologies Ag Integrated circuit having a resistive memory
US7333379B2 (en) * 2006-01-12 2008-02-19 International Business Machines Corporation Balanced sense amplifier circuits with adjustable transistor body bias
US8432142B2 (en) * 2006-01-17 2013-04-30 Broadcom Corporation Power over ethernet controller integrated circuit architecture
US20070247939A1 (en) * 2006-04-21 2007-10-25 Nahas Joseph J Mram array with reference cell row and methof of operation
US7286429B1 (en) * 2006-04-24 2007-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. High speed sensing amplifier for an MRAM cell
WO2007122564A2 (en) * 2006-04-24 2007-11-01 Nxp B.V. Memory circuit and method for sensing a memory element
US7292484B1 (en) 2006-06-07 2007-11-06 Freescale Semiconductor, Inc. Sense amplifier with multiple bits sharing a common reference
WO2008007174A1 (en) * 2006-07-10 2008-01-17 Freescale Semiconductor, Inc. Memory circuit with sense amplifier
FR2904463A1 (fr) * 2006-07-27 2008-02-01 St Microelectronics Sa Programmation d'un circuit de retention de charges pour mesure temporelle
KR100759911B1 (ko) * 2006-10-24 2007-09-18 소코머쉬너리컴퍼니리미티드 공작물 클램핑 장치
JP4969999B2 (ja) * 2006-11-09 2012-07-04 株式会社東芝 磁気記憶装置
JP4896830B2 (ja) * 2007-07-03 2012-03-14 株式会社東芝 磁気ランダムアクセスメモリ
US7535783B2 (en) * 2007-10-01 2009-05-19 International Business Machines Corporation Apparatus and method for implementing precise sensing of PCRAM devices
JP2009087494A (ja) * 2007-10-02 2009-04-23 Toshiba Corp 磁気ランダムアクセスメモリ
US7679878B2 (en) * 2007-12-21 2010-03-16 Broadcom Corporation Capacitor sharing surge protection circuit
US7778065B2 (en) * 2008-02-29 2010-08-17 International Business Machines Corporation Method and apparatus for implementing concurrent multiple level sensing operation for resistive memory devices
JP5086919B2 (ja) * 2008-06-30 2012-11-28 株式会社東芝 半導体記憶装置
US8228714B2 (en) * 2008-09-09 2012-07-24 Qualcomm Incorporated Memory device for resistance-based memory applications
US8184476B2 (en) * 2008-12-26 2012-05-22 Everspin Technologies, Inc. Random access memory architecture including midpoint reference
US8254195B2 (en) * 2010-06-01 2012-08-28 Qualcomm Incorporated High-speed sensing for resistive memories
US8743630B2 (en) 2011-05-23 2014-06-03 Infineon Technologies Ag Current sense amplifier with replica bias scheme
US9042152B2 (en) * 2011-08-25 2015-05-26 Samsung Electronics Co., Ltd. Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device
KR102115440B1 (ko) * 2012-11-14 2020-05-27 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그의 구동방법
US9384792B2 (en) 2014-04-09 2016-07-05 Globalfoundries Inc. Offset-cancelling self-reference STT-MRAM sense amplifier
US9373383B2 (en) 2014-09-12 2016-06-21 International Business Machines Corporation STT-MRAM sensing technique
US9343131B1 (en) 2015-02-24 2016-05-17 International Business Machines Corporation Mismatch and noise insensitive sense amplifier circuit for STT MRAM
US9666258B2 (en) 2015-08-11 2017-05-30 International Business Machines Corporation Bit line clamp voltage generator for STT MRAM sensing
US10170182B2 (en) * 2016-03-16 2019-01-01 Imec Vzw Resistance change memory device configured for state evaluation based on reference cells
US9799386B1 (en) 2016-08-30 2017-10-24 International Business Machines Corporation STT MRAM midpoint reference cell allowing full write
US9786343B1 (en) 2016-08-30 2017-10-10 International Business Machines Corporation STT MRAM common source line array bias scheme
US10224088B1 (en) * 2018-02-12 2019-03-05 Nxp Usa, Inc. Memory with a global reference circuit
US10930344B2 (en) * 2018-06-01 2021-02-23 Taiwan Semiconductor Manufacturing Company Ltd. RRAM circuit and method
US10574469B1 (en) 2019-04-10 2020-02-25 Nxp Usa, Inc. Physically unclonable function and method for generating a digital code
CN113160859B (zh) * 2021-03-31 2021-12-14 珠海博雅科技有限公司 灵敏放大器及存储器
KR102382563B1 (ko) 2022-01-03 2022-04-01 주식회사 금용 염화칼슘 살포를 겸한 차량전방 살수식 염수제설기
KR102640435B1 (ko) 2023-01-31 2024-02-23 변정훈 염수분사 노즐을 구성한 제설판

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2694119B1 (fr) * 1992-07-24 1994-08-26 Sgs Thomson Microelectronics Circuit de lecture pour mémoire, avec recharge et équilibrage avant lecture.
DE69426977T2 (de) * 1994-05-03 2001-07-19 St Microelectronics Srl Abfühlverstärker mit Hysteresis
JPH08255487A (ja) * 1995-03-17 1996-10-01 Fujitsu Ltd 半導体記憶装置
EP0805454A1 (de) * 1996-04-30 1997-11-05 STMicroelectronics S.r.l. Abtastschaltung zum Lesen und Nachprüfen eines Speicherzelleninhalts
US5898617A (en) * 1997-05-21 1999-04-27 Motorola, Inc. Sensing circuit and method
IT1298939B1 (it) * 1998-02-23 2000-02-07 Sgs Thomson Microelectronics Amplificatore di rilevamento statico a retroazione per memorie non volatili
US6009032A (en) * 1999-06-04 1999-12-28 Silicon Integrated Systems Corp. High-speed cell-sensing unit for a semiconductor memory device
US6285615B1 (en) * 2000-06-09 2001-09-04 Sandisk Corporation Multiple output current mirror with improved accuracy
US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
US6269040B1 (en) * 2000-06-26 2001-07-31 International Business Machines Corporation Interconnection network for connecting memory cells to sense amplifiers
US6538940B1 (en) * 2002-09-26 2003-03-25 Motorola, Inc. Method and circuitry for identifying weak bits in an MRAM

Also Published As

Publication number Publication date
DE60305736T2 (de) 2006-09-21
AU2003230284A8 (en) 2004-01-19
CN1717741B (zh) 2011-06-22
AU2003230284A1 (en) 2004-01-19
EP1576610B1 (de) 2006-05-31
WO2004003925A3 (en) 2005-07-28
CN1717741A (zh) 2006-01-04
KR20050013649A (ko) 2005-02-04
WO2004003925A2 (en) 2004-01-08
TWI299871B (en) 2008-08-11
TW200405357A (en) 2004-04-01
US6600690B1 (en) 2003-07-29
JP2006505082A (ja) 2006-02-09
EP1576610A2 (de) 2005-09-21
JP4283769B2 (ja) 2009-06-24
DE60305736D1 (de) 2006-07-06

Similar Documents

Publication Publication Date Title
ATE328350T1 (de) Speicherleseverstärker mit mindesten zwei bestimmten widerständen
TW200514348A (en) Differential amplifier and bit-line sense amplifier adopting the same
CN101281220B (zh) 电容检测电路及其电容式传感器接口电路芯片
TW200701228A (en) Voltage supply circuit and semiconductor memory
US7113437B2 (en) Sense amplifier systems and a matrix-addressable memory device provided therewith
TW200601345A (en) Sensing circuit for flash memory device operating at low power supply voltage
CN101777374B (zh) 带工艺和电流补偿的读出放大器
WO1999012259A3 (en) Duty cycle correction circuit using two differential amplifiers
DE60211531D1 (de) Mram mit mittelpunktsreferenzgenerator
JP2000339973A5 (de)
ATE309575T1 (de) Speicherbusschnittstelle mit geringem energieverbrauch
GB2457408A (en) Sensing device for floating body cell memory and method thereof
JP3825338B2 (ja) メモリ装置の入出力ライン感知増幅器
WO2004023648A3 (en) Amplifier power control circuit
KR20150062937A (ko) 판독 전압 부스트를 포함하는 메모리 회로
TWI257107B (en) Low power dissipating sense amplifier
CN103123800B (zh) 一种灵敏放大器
Razzaghpour et al. A highly-accurate low-power CMOS potentiostat for implantable biosensors
JP2005285161A (ja) 半導体集積回路装置
TW200511309A (en) Memory device and method of amplifying voltage levels of bit line and complementary bit line
CN111462802B (zh) 一种nor闪存的读取电路
CN101783162B (zh) 具自动增益控制的读出放大器
US7405623B2 (en) Sensing circuit
ATE270459T1 (de) Niederspannungs-lesekaskodenschaltung mit 2v/3v betriebspannungen und verschiedenen speicherbankkombinationen ohne metallisierung für simultanen flash-speicher
Tan et al. A low power potentiostat for implantable glucose sensor tag

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties