DE602005018200D1 - Silizium-Photovervielfacher mit Zellenmatrix - Google Patents

Silizium-Photovervielfacher mit Zellenmatrix

Info

Publication number
DE602005018200D1
DE602005018200D1 DE602005018200T DE602005018200T DE602005018200D1 DE 602005018200 D1 DE602005018200 D1 DE 602005018200D1 DE 602005018200 T DE602005018200 T DE 602005018200T DE 602005018200 T DE602005018200 T DE 602005018200T DE 602005018200 D1 DE602005018200 D1 DE 602005018200D1
Authority
DE
Germany
Prior art keywords
layer
conductance type
cms
agent concentration
doping agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602005018200T
Other languages
German (de)
English (en)
Inventor
Boris Anatolievich Dolgoshein
Elena Viktorovna Osenny Popova
Sergey Nikolaevich Klemin
Leonid Anatolievich Filatov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Publication of DE602005018200D1 publication Critical patent/DE602005018200D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
DE602005018200T 2004-05-05 2005-05-05 Silizium-Photovervielfacher mit Zellenmatrix Expired - Lifetime DE602005018200D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2004113616/28A RU2290721C2 (ru) 2004-05-05 2004-05-05 Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
PCT/RU2005/000242 WO2005106971A1 (en) 2004-05-05 2005-05-05 Silicon photomultiplier (variants) and a cell therefor

Publications (1)

Publication Number Publication Date
DE602005018200D1 true DE602005018200D1 (de) 2010-01-21

Family

ID=35241944

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005018200T Expired - Lifetime DE602005018200D1 (de) 2004-05-05 2005-05-05 Silizium-Photovervielfacher mit Zellenmatrix

Country Status (9)

Country Link
US (1) US7759623B2 (https=)
EP (2) EP2144287B1 (https=)
JP (1) JP2007536703A (https=)
KR (1) KR101113364B1 (https=)
CN (1) CN1998091B (https=)
AT (1) ATE451720T1 (https=)
DE (1) DE602005018200D1 (https=)
RU (1) RU2290721C2 (https=)
WO (1) WO2005106971A1 (https=)

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JP5174813B2 (ja) * 2006-07-21 2013-04-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Ｔｏｆｐｅｔの再構成を改良するための方法及びシステム
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DE102007037020B3 (de) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
EP2176686B1 (en) * 2007-08-08 2014-05-21 Koninklijke Philips N.V. Silicon photomultiplier trigger network
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KR100987057B1 (ko) * 2008-06-12 2010-10-11 한국과학기술원 광검출 효율이 향상된 실리콘 광전자 증배관 및 이를포함하는 감마선 검출기
RU2386192C1 (ru) * 2008-08-20 2010-04-10 Александр Иванович Патрашин Многокаскадный лавинный фотодетектор
DE102009017505B4 (de) 2008-11-21 2014-07-10 Ketek Gmbh Strahlungsdetektor, Verwendung eines Strahlungsdetektors und Verfahren zur Herstellung eines Strahlungsdetektors
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DE112009004341B4 (de) 2009-01-11 2015-12-10 Ketek Gmbh Halbleiter-Geigermodus-Mikrozellenphotodioden
IT1393781B1 (it) 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
KR101148335B1 (ko) * 2009-07-23 2012-05-21 삼성전기주식회사 실리콘 반도체를 이용한 광전자 증배관 및 그 구조 셀
EP2462630B1 (en) * 2009-08-03 2016-03-30 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Highly efficient cmos technology compatible silicon photoelectric multiplier
KR101084940B1 (ko) * 2009-09-28 2011-11-17 삼성전기주식회사 실리콘 광전자 증배관
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WO2011122856A2 (ko) * 2010-03-30 2011-10-06 이화여자대학교 산학협력단 실리콘 광증배 소자
IT1399690B1 (it) 2010-03-30 2013-04-26 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione
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WO2012019640A1 (en) 2010-08-10 2012-02-16 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Silicon photoelectric multiplier with multiple "isochronic" read-out
CN102024863B (zh) * 2010-10-11 2013-03-27 湘潭大学 高速增强型紫外硅选择性雪崩光电二极管及其制作方法
KR101711087B1 (ko) 2010-12-07 2017-02-28 한국전자통신연구원 실리콘 포토멀티플라이어 및 그 제조 방법
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EP2656400B1 (en) * 2010-12-21 2017-05-31 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Silicon photoelectric multiplier with optical cross-talk suppression due to special properties of the substrate
KR101648023B1 (ko) * 2010-12-21 2016-08-12 한국전자통신연구원 트렌치 분리형 실리콘 포토멀티플라이어
US8368159B2 (en) 2011-07-08 2013-02-05 Excelitas Canada, Inc. Photon counting UV-APD
KR101283534B1 (ko) * 2011-07-28 2013-07-15 이화여자대학교 산학협력단 실리콘 광전자 증배 소자의 제조방법
US8871557B2 (en) 2011-09-02 2014-10-28 Electronics And Telecommunications Research Institute Photomultiplier and manufacturing method thereof
JP5791461B2 (ja) * 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP5984617B2 (ja) 2012-10-18 2016-09-06 浜松ホトニクス株式会社 フォトダイオードアレイ
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US20140159180A1 (en) * 2012-12-06 2014-06-12 Agency For Science, Technology And Research Semiconductor resistor structure and semiconductor photomultiplier device
KR101395102B1 (ko) 2013-02-14 2014-05-16 한국과학기술원 Ｐｃｂ 기판을 이용한 실리콘 광전자증배관의 패키징 방법
JP5925711B2 (ja) 2013-02-20 2016-05-25 浜松ホトニクス株式会社 検出器、ｐｅｔ装置及びｘ線ｃｔ装置
EP2793273B1 (en) * 2013-04-17 2016-12-28 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Silicon photomultiplier with very low optical cross-talk and improved readout
US9410901B2 (en) * 2014-03-17 2016-08-09 Kla-Tencor Corporation Image sensor, an inspection system and a method of inspecting an article
TWI700823B (zh) * 2014-06-27 2020-08-01 日商半導體能源研究所股份有限公司 攝像裝置及電子裝置
DE102018119710A1 (de) * 2018-08-14 2020-02-20 Universität Leipzig Vorrichtung und verfahren zur bestimmung einer wellenlänge einer strahlung
CN109276268A (zh) * 2018-11-21 2019-01-29 京东方科技集团股份有限公司 X射线探测装置及其制造方法
US11428826B2 (en) * 2019-09-09 2022-08-30 Semiconductor Components Industries, Llc Silicon photomultipliers with split microcells
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Also Published As

Publication number Publication date
RU2290721C2 (ru) 2006-12-27
KR101113364B1 (ko) 2012-03-02
EP2144287A1 (en) 2010-01-13
EP1755171B8 (en) 2010-05-19
EP1755171B1 (en) 2009-12-09
EP1755171A4 (en) 2008-02-27
ATE451720T1 (de) 2009-12-15
EP2144287B1 (en) 2016-12-07
CN1998091A (zh) 2007-07-11
US20080251692A1 (en) 2008-10-16
EP1755171A1 (en) 2007-02-21
KR20070051782A (ko) 2007-05-18
CN1998091B (zh) 2010-09-29
WO2005106971A1 (en) 2005-11-10
JP2007536703A (ja) 2007-12-13
US7759623B2 (en) 2010-07-20

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: KLEMIN, SERGEY NIKOLAEVICH, MOSCOW, 115582, RU

Inventor name: TESHIMA, MASAHIRO, 85716 UNTERSCHLEISSHEIM, DE

Inventor name: FILATOV, LEONID ANATOLIEVICH, MOSCOW, 117465, RU

Inventor name: MIRZOYAN, RAZMIK, 85716 UNTERSCHLEISSHEIM, DE

Inventor name: POPOVA, ELENA VIKTOROVNA OSENNY BULVA, MOSKOVS, RU

Inventor name: DOLGOSHEIN, BORIS ANATOLIEVICH, MOSCOW, 115522, RU

8364 No opposition during term of opposition