DE60136396D1 - Schaltungeinheit mit automatischer interner Befehlsfunktion - Google Patents
Schaltungeinheit mit automatischer interner BefehlsfunktionInfo
- Publication number
- DE60136396D1 DE60136396D1 DE60136396T DE60136396T DE60136396D1 DE 60136396 D1 DE60136396 D1 DE 60136396D1 DE 60136396 T DE60136396 T DE 60136396T DE 60136396 T DE60136396 T DE 60136396T DE 60136396 D1 DE60136396 D1 DE 60136396D1
- Authority
- DE
- Germany
- Prior art keywords
- circuit unit
- internal command
- command function
- automatic internal
- automatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4061—Calibration or ate or cycle tuning
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4065—Low level details of refresh operations
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000131260 | 2000-04-28 | ||
| JP2001113443A JP4201490B2 (ja) | 2000-04-28 | 2001-04-12 | 自動プリチャージ機能を有するメモリ回路及び自動内部コマンド機能を有する集積回路装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60136396D1 true DE60136396D1 (de) | 2008-12-11 |
Family
ID=26591275
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60114503T Expired - Lifetime DE60114503T2 (de) | 2000-04-28 | 2001-04-30 | Speicher mit automatischer Auffrischungsfunktion und Schaltungeinheit mit automatischer interner Befehlsfunktion |
| DE60136396T Expired - Lifetime DE60136396D1 (de) | 2000-04-28 | 2001-04-30 | Schaltungeinheit mit automatischer interner Befehlsfunktion |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60114503T Expired - Lifetime DE60114503T2 (de) | 2000-04-28 | 2001-04-30 | Speicher mit automatischer Auffrischungsfunktion und Schaltungeinheit mit automatischer interner Befehlsfunktion |
Country Status (6)
| Country | Link |
|---|---|
| US (7) | US6636449B2 (de) |
| EP (3) | EP1406268B1 (de) |
| JP (1) | JP4201490B2 (de) |
| KR (1) | KR100656217B1 (de) |
| DE (2) | DE60114503T2 (de) |
| TW (1) | TW588351B (de) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7120761B2 (en) | 2000-12-20 | 2006-10-10 | Fujitsu Limited | Multi-port memory based on DRAM core |
| JP5028710B2 (ja) * | 2001-02-14 | 2012-09-19 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
| US6690606B2 (en) * | 2002-03-19 | 2004-02-10 | Micron Technology, Inc. | Asynchronous interface circuit and method for a pseudo-static memory device |
| JP2003297080A (ja) * | 2002-03-29 | 2003-10-17 | Mitsubishi Electric Corp | 半導体記憶装置 |
| AU2003268017A1 (en) * | 2002-07-24 | 2004-02-09 | General Instrument Corporation | Method and apparatus for rapid capture of program identifier data in a broadband transcoder multiplexer |
| US7124260B2 (en) * | 2002-08-26 | 2006-10-17 | Micron Technology, Inc. | Modified persistent auto precharge command protocol system and method for memory devices |
| JP2004103081A (ja) * | 2002-09-06 | 2004-04-02 | Renesas Technology Corp | 半導体記憶装置 |
| JP4372687B2 (ja) | 2002-09-20 | 2009-11-25 | 富士通マイクロエレクトロニクス株式会社 | 半導体メモリ |
| JP4236903B2 (ja) * | 2002-10-29 | 2009-03-11 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置及びその制御方法 |
| JP2004171678A (ja) * | 2002-11-20 | 2004-06-17 | Sony Corp | 情報記憶装置、情報記憶方法、及び情報記憶プログラム |
| KR100557590B1 (ko) * | 2002-12-26 | 2006-03-03 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 오토 리프레시 제어회로 |
| US6920524B2 (en) | 2003-02-03 | 2005-07-19 | Micron Technology, Inc. | Detection circuit for mixed asynchronous and synchronous memory operation |
| JP4282408B2 (ja) * | 2003-08-22 | 2009-06-24 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置 |
| EP1515271A1 (de) * | 2003-09-09 | 2005-03-16 | STMicroelectronics S.r.l. | Verfahren und Vorrichtung zur Extrahierung eines Datenteilsatzes aus einem Datensatz |
| JP4326294B2 (ja) | 2003-09-16 | 2009-09-02 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| US7042786B2 (en) * | 2004-04-26 | 2006-05-09 | Infineon Technologies Ag | Memory with adjustable access time |
| TWI260019B (en) * | 2004-05-21 | 2006-08-11 | Fujitsu Ltd | Semiconductor memory device and memory system |
| JP4806520B2 (ja) * | 2004-05-21 | 2011-11-02 | 富士通セミコンダクター株式会社 | 半導体記憶装置及びメモリシステム |
| JP4723205B2 (ja) * | 2004-05-21 | 2011-07-13 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
| JP2006073062A (ja) | 2004-08-31 | 2006-03-16 | Toshiba Corp | 半導体記憶装置 |
| JP4291239B2 (ja) * | 2004-09-10 | 2009-07-08 | エルピーダメモリ株式会社 | 半導体記憶装置及びテスト方法 |
| JP4362573B2 (ja) * | 2005-07-28 | 2009-11-11 | パトレネラ キャピタル リミテッド， エルエルシー | メモリ |
| US7702942B2 (en) * | 2005-09-12 | 2010-04-20 | Northern Lights Semiconductor Corp. | Method for generating adjustable MRAM timing signals |
| KR100660892B1 (ko) * | 2005-11-21 | 2006-12-26 | 삼성전자주식회사 | 더블 펌프드 어드레스 스킴의 메모리 장치에서 고속 동작을위해 확장된 유효 어드레스 윈도우로 유효 커맨드를샘플링하는 회로 및 방법 |
| US7385858B2 (en) * | 2005-11-30 | 2008-06-10 | Mosaid Technologies Incorporated | Semiconductor integrated circuit having low power consumption with self-refresh |
| JP2007200504A (ja) * | 2006-01-30 | 2007-08-09 | Fujitsu Ltd | 半導体メモリ、メモリコントローラ及び半導体メモリの制御方法 |
| DE102006020098A1 (de) * | 2006-04-29 | 2007-10-31 | Infineon Technologies Ag | Speicherschaltung und Verfahren zum Auffrischen von dynamischen Speicherzellen |
| US7768866B2 (en) * | 2006-05-03 | 2010-08-03 | Macronix International Co., Ltd. | Method and system for preventing noise disturbance in high speed, low power memory |
| US7733731B2 (en) | 2007-03-05 | 2010-06-08 | Micron Technology, Inc. | Control of inputs to a memory device |
| US7729191B2 (en) * | 2007-09-06 | 2010-06-01 | Micron Technology, Inc. | Memory device command decoding system and memory device and processor-based system using same |
| JP2009181666A (ja) * | 2008-01-31 | 2009-08-13 | Sony Corp | 半導体メモリ装置およびその動作方法 |
| US8130576B2 (en) * | 2008-06-30 | 2012-03-06 | Intel Corporation | Memory throughput increase via fine granularity of precharge management |
| KR101666590B1 (ko) * | 2009-02-23 | 2016-10-14 | 삼성전자 주식회사 | 글리치 프리 및 파워 세이빙 기능을 갖는 시프트 레지스터 회로 |
| KR20110040538A (ko) * | 2009-10-14 | 2011-04-20 | 삼성전자주식회사 | 레이턴시 회로 및 이를 포함하는 반도체 장치 |
| US8436670B2 (en) | 2011-01-13 | 2013-05-07 | Micron Technology, Inc. | Power supply induced signal jitter compensation |
| JP2013030245A (ja) * | 2011-07-28 | 2013-02-07 | Elpida Memory Inc | 情報処理システム |
| JP2013030246A (ja) | 2011-07-28 | 2013-02-07 | Elpida Memory Inc | 情報処理システム |
| JP6072449B2 (ja) * | 2012-07-09 | 2017-02-01 | ルネサスエレクトロニクス株式会社 | 半導体記憶回路及びその動作方法 |
| US9520169B2 (en) * | 2013-02-25 | 2016-12-13 | Longitude Semiconductor S.A.R.L. | Semiconductor device |
| WO2016089355A1 (en) | 2014-12-01 | 2016-06-09 | Hewlett Packard Enterprise Development Lp | Auto-negotiation over extended backplane |
| KR102248931B1 (ko) * | 2014-12-23 | 2021-05-06 | 에스케이하이닉스 주식회사 | 반도체시스템 |
| WO2017065732A1 (en) | 2015-10-12 | 2017-04-20 | Hewlett Packard Enterprise Development Lp | Switch network architecture |
| WO2017065748A1 (en) * | 2015-10-13 | 2017-04-20 | Hewlett Packard Enterprise Development Lp | Memory manager for autonomous memory device |
| KR20190075202A (ko) * | 2017-12-21 | 2019-07-01 | 에스케이하이닉스 주식회사 | 테스트 제어 회로, 이를 이용하는 반도체 메모리 장치 및 반도체 시스템 |
| US10642512B2 (en) * | 2018-09-04 | 2020-05-05 | Micron Technology, Inc. | Low-speed memory operation |
| US11056174B2 (en) * | 2018-12-06 | 2021-07-06 | Etron Technology, Inc. | Dynamic random access memory with shaped word-line waveform |
| JP6734962B1 (ja) * | 2019-04-17 | 2020-08-05 | ウィンボンド エレクトロニクス コーポレーション | 半導体装置 |
| US20230162780A1 (en) * | 2021-11-22 | 2023-05-25 | Nvidia Corporation | Mitigating duty cycle distortion degradation due to device aging on high-bandwidth memory interface |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5848293A (ja) * | 1981-09-16 | 1983-03-22 | Canon Inc | メモリのリフレツシユ装置 |
| JPS6129489A (ja) | 1984-07-20 | 1986-02-10 | Olympus Optical Co Ltd | ダイナミツクメモリ制御方式 |
| JPS6171494A (ja) | 1984-09-14 | 1986-04-12 | Hitachi Ltd | 半導体記憶装置 |
| JP2587229B2 (ja) * | 1987-03-11 | 1997-03-05 | 日本テキサス・インスツルメンツ株式会社 | アービタ回路 |
| JPS63247997A (ja) * | 1987-04-01 | 1988-10-14 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP3155545B2 (ja) * | 1990-09-07 | 2001-04-09 | シャープ株式会社 | メモリのリフレッシュ制御回路 |
| JP2988804B2 (ja) | 1993-03-19 | 1999-12-13 | 株式会社東芝 | 半導体メモリ装置 |
| JP2605576B2 (ja) * | 1993-04-02 | 1997-04-30 | 日本電気株式会社 | 同期型半導体メモリ |
| KR0171930B1 (ko) * | 1993-12-15 | 1999-03-30 | 모리시다 요이치 | 반도체 메모리, 동화기억 메모리, 동화기억장치, 동화표시장치, 정지화기억 메모리 및 전자노트 |
| US6128700A (en) * | 1995-05-17 | 2000-10-03 | Monolithic System Technology, Inc. | System utilizing a DRAM array as a next level cache memory and method for operating same |
| US5627791A (en) | 1996-02-16 | 1997-05-06 | Micron Technology, Inc. | Multiple bank memory with auto refresh to specified bank |
| JP4000206B2 (ja) | 1996-08-29 | 2007-10-31 | 富士通株式会社 | 半導体記憶装置 |
| JPH11268772A (ja) | 1998-03-19 | 1999-10-05 | Fujitsu General Ltd | 緩衝装置 |
| JP3606043B2 (ja) | 1998-04-07 | 2005-01-05 | 双葉電子工業株式会社 | 制御用無線受信機 |
| JP2000113699A (ja) | 1998-10-07 | 2000-04-21 | Hitachi Ltd | 半導体集積回路装置 |
| US6587918B1 (en) * | 1998-11-19 | 2003-07-01 | Micron Technology, Inc. | Method for controlling refresh of a multibank memory device |
| JP2000163956A (ja) * | 1998-11-24 | 2000-06-16 | Sharp Corp | 半導体記憶装置 |
| KR100381966B1 (ko) * | 1998-12-28 | 2004-03-22 | 주식회사 하이닉스반도체 | 반도체메모리장치및그구동방법 |
| US6275437B1 (en) * | 2000-06-30 | 2001-08-14 | Samsung Electronics Co., Ltd. | Refresh-type memory with zero write recovery time and no maximum cycle time |
-
2001
- 2001-04-12 JP JP2001113443A patent/JP4201490B2/ja not_active Expired - Fee Related
- 2001-04-20 TW TW090109561A patent/TW588351B/zh not_active IP Right Cessation
- 2001-04-25 US US09/841,611 patent/US6636449B2/en not_active Expired - Lifetime
- 2001-04-27 KR KR1020010022850A patent/KR100656217B1/ko not_active IP Right Cessation
- 2001-04-30 EP EP03027305A patent/EP1406268B1/de not_active Expired - Lifetime
- 2001-04-30 EP EP01303938A patent/EP1150301B1/de not_active Expired - Lifetime
- 2001-04-30 DE DE60114503T patent/DE60114503T2/de not_active Expired - Lifetime
- 2001-04-30 EP EP05018384A patent/EP1610342B8/de not_active Expired - Lifetime
- 2001-04-30 DE DE60136396T patent/DE60136396D1/de not_active Expired - Lifetime
-
2003
- 2003-05-16 US US10/438,927 patent/US6747906B2/en not_active Expired - Lifetime
-
2004
- 2004-04-23 US US10/830,149 patent/US7064997B2/en not_active Expired - Fee Related
-
2006
- 2006-04-28 US US11/413,204 patent/US7345942B2/en not_active Expired - Fee Related
-
2007
- 2007-04-27 US US11/790,831 patent/US7349280B2/en not_active Expired - Fee Related
- 2007-04-27 US US11/790,834 patent/US20070206431A1/en not_active Abandoned
- 2007-04-27 US US11/790,832 patent/US7304907B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1610342A1 (de) | 2005-12-28 |
| EP1610342B8 (de) | 2009-03-04 |
| KR100656217B1 (ko) | 2006-12-12 |
| DE60114503D1 (de) | 2005-12-08 |
| JP2002015575A (ja) | 2002-01-18 |
| EP1150301B1 (de) | 2005-11-02 |
| US20010038565A1 (en) | 2001-11-08 |
| US6636449B2 (en) | 2003-10-21 |
| US20030202414A1 (en) | 2003-10-30 |
| EP1406268A2 (de) | 2004-04-07 |
| US7064997B2 (en) | 2006-06-20 |
| EP1610342B1 (de) | 2008-10-29 |
| EP1150301A1 (de) | 2001-10-31 |
| US7345942B2 (en) | 2008-03-18 |
| US6747906B2 (en) | 2004-06-08 |
| EP1406268A3 (de) | 2008-05-14 |
| US20070195628A1 (en) | 2007-08-23 |
| US7349280B2 (en) | 2008-03-25 |
| DE60114503T2 (de) | 2006-06-22 |
| JP4201490B2 (ja) | 2008-12-24 |
| US20070206431A1 (en) | 2007-09-06 |
| US20070201292A1 (en) | 2007-08-30 |
| US7304907B2 (en) | 2007-12-04 |
| US20060187732A1 (en) | 2006-08-24 |
| KR20010100919A (ko) | 2001-11-14 |
| US20040196728A1 (en) | 2004-10-07 |
| TW588351B (en) | 2004-05-21 |
| EP1406268B1 (de) | 2012-05-30 |
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