JP4326294B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
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- JP4326294B2 JP4326294B2 JP2003323130A JP2003323130A JP4326294B2 JP 4326294 B2 JP4326294 B2 JP 4326294B2 JP 2003323130 A JP2003323130 A JP 2003323130A JP 2003323130 A JP2003323130 A JP 2003323130A JP 4326294 B2 JP4326294 B2 JP 4326294B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/109—Control signal input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1087—Data input latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1093—Input synchronization
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1096—Write circuits, e.g. I/O line write drivers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Description
図1は、この発明の実施の形態1に従う半導体記憶装置の構成を示すブロック図である。
先の実施の形態1においては、半導体記憶装置が内部動作モードにあるときには、内部動作が終了して外部制御信号発生回路の非同期リセットが終了するまで、外部コマンドの受付を禁止することによって、外部制御信号発生回路に生じる誤動作を防止する構成について説明した。
Claims (4)
- 装置外部からのクロック信号に同期して外部クロック信号を発生する外部クロック発生回路と、
前記外部クロック信号に同期して、前記装置外部から与えられた外部コマンドを取込み、取込んだ前記外部コマンドに応答して外部制御信号を発生する外部制御信号発生回路と、
メモリセルアレイと、前記メモリセルアレイに対してデータ読出およびデータ書込の内部動作を行なう読出書込回路とを含むメモリ回路と、
前記外部クロック信号とは非同期の内部クロック信号に同期して、前記外部制御信号を取込み、取込んだ前記外部制御信号に応答して前記メモリ回路を制御する内部制御信号を発生する内部制御信号発生回路と、
前記メモリ回路が内部動作モードにエントリしたことに応じて第1の論理状態となり、前記内部動作モードが終了したことに応じて第2の論理状態となるモード指示信号を発生するモード指示信号発生部と、
前記第1の論理状態のモード指示信号に応答して、前記内部クロック信号を発生する内部クロック発生回路とを備え、
前記外部クロック発生回路は、
前記装置外部クロック信号の位相と前記モード指示信号の位相とを比較し、位相比較結果として第1の信号を出力する位相比較器を含み、
前記第1の論理状態のモード指示信号に応じて、前記外部クロック信号の発生を停止し、
前記第2の論理状態のモード指示信号と前記装置外部クロック信号とに基づいて生成される前記第1の信号および前記装置外部クロック信号を所定の遅延量遅延させた第2の信号に基づいて前記外部クロック信号を発生し、
前記所定の遅延量は、前記位相比較器におけるメタステーブル状態を回避する遅延量である、半導体記憶装置。 - 前記外部クロック発生回路は、
前記装置外部クロック信号を前記所定の遅延量遅延させて前記第2の信号を発生する遅延回路と、
前記第1の信号と前記第2の信号とが入力され、前記外部クロック信号を出力する論理回路とをさらに含む、請求項1に記載の半導体記憶装置。 - 装置外部からのクロック信号に同期して外部クロック信号を発生する外部クロック発生回路と、
前記外部クロック信号に同期して、前記装置外部から与えられた外部コマンドを取込み、取込んだ前記外部コマンドに応答して外部制御信号を発生する外部制御信号発生回路と、
メモリセルアレイと、前記メモリセルアレイに対してデータ読出およびデータ書込の内部動作を行なう読出書込回路とを含むメモリ回路と、
前記外部クロック信号とは非同期の内部クロック信号に同期して、前記外部制御信号を取込み、取込んだ前記外部制御信号に応答して前記メモリ回路を制御する内部制御信号を発生する内部制御信号発生回路と、
前記メモリ回路が内部動作モードにエントリしたことに応じて第1の論理状態となり、内部動作モードが終了したことに応じて第2の論理状態となるモード指示信号を発生するモード指示信号発生部と、
前記第1の論理状態のモード指示信号に応答して、前記内部クロック信号を発生する内部クロック発生回路とを備え、
前記内部制御信号発生回路は、前記メモリ回路が内部動作を終了したことに応じて、前記外部制御信号発生回路を初期化するためのリセットパルス信号を出力し、
前記モード指示信号発生部は、前記リセットパルス信号によって前記外部制御信号発生回路の初期化が完了したことに応答して、前記第2の論理状態のモード指示信号を発生し、
前記外部クロック発生回路は、前記モード指示信号発生部から入力される前記モード指示信号を、前記第2の論理状態から前記第1の論理状態に変化する時間に比べ、前記第1の論理状態から前記第2の論理状態に変化する時間を、該変化が生じるまでに前記外部制御信号発生回路の動作が終了するように遅延させ、前記第1の論理状態のモード指示信号に応じて、前記外部クロック信号の発生を停止し、前記第2の論理状態のモード指示信号に応じて、前記外部クロック信号を発生させる、半導体記憶装置。 - 前記遅延時間は、前記リセットパルス信号の幅よりも小さいとする、請求項3に記載の半導体記憶装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003323130A JP4326294B2 (ja) | 2003-09-16 | 2003-09-16 | 半導体記憶装置 |
US10/938,615 US7042769B2 (en) | 2003-09-16 | 2004-09-13 | Semiconductor memory device capable of accurate and stable operation |
KR1020040073882A KR100635419B1 (ko) | 2003-09-16 | 2004-09-15 | 정확하고 안정된 동작이 가능한 반도체 기억 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003323130A JP4326294B2 (ja) | 2003-09-16 | 2003-09-16 | 半導体記憶装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009079996A Division JP5042260B2 (ja) | 2009-03-27 | 2009-03-27 | 半導体記憶装置 |
Publications (3)
Publication Number | Publication Date |
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JP2005092957A JP2005092957A (ja) | 2005-04-07 |
JP2005092957A5 JP2005092957A5 (ja) | 2006-09-14 |
JP4326294B2 true JP4326294B2 (ja) | 2009-09-02 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003323130A Expired - Fee Related JP4326294B2 (ja) | 2003-09-16 | 2003-09-16 | 半導体記憶装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7042769B2 (ja) |
JP (1) | JP4326294B2 (ja) |
KR (1) | KR100635419B1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2474509C (en) * | 2002-02-14 | 2012-01-31 | Immunivest Corporation | Methods and algorithms for cell enumeration in a low-cost cytometer |
US8189899B2 (en) * | 2004-07-30 | 2012-05-29 | Veridex, Llc | Methods and algorithms for cell enumeration in a low-cost cytometer |
KR100721021B1 (ko) | 2006-02-15 | 2007-05-23 | 삼성전자주식회사 | 반도체 메모리 장치의 버스트 리드 회로 및 버스트 데이터출력 방법 |
JP2007233842A (ja) * | 2006-03-02 | 2007-09-13 | Matsushita Electric Ind Co Ltd | リセット動作検証回路の生成方法 |
JP2008152464A (ja) * | 2006-12-15 | 2008-07-03 | Toshiba Corp | 記憶装置 |
US7656745B2 (en) | 2007-03-15 | 2010-02-02 | Micron Technology, Inc. | Circuit, system and method for controlling read latency |
WO2009079744A1 (en) * | 2007-12-21 | 2009-07-02 | Mosaid Technologies Incorporated | Non-volatile semiconductor memory device with power saving feature |
US8291248B2 (en) | 2007-12-21 | 2012-10-16 | Mosaid Technologies Incorporated | Non-volatile semiconductor memory device with power saving feature |
US7936637B2 (en) * | 2008-06-30 | 2011-05-03 | Micron Technology, Inc. | System and method for synchronizing asynchronous signals without external clock |
KR102342740B1 (ko) * | 2014-09-15 | 2021-12-23 | 삼성전자주식회사 | 신호 송수신 방법 및 장치 |
US10042587B1 (en) * | 2016-03-15 | 2018-08-07 | Adesto Technologies Corporation | Automatic resumption of suspended write operation upon completion of higher priority write operation in a memory device |
US9865317B2 (en) * | 2016-04-26 | 2018-01-09 | Micron Technology, Inc. | Methods and apparatuses including command delay adjustment circuit |
US9997220B2 (en) | 2016-08-22 | 2018-06-12 | Micron Technology, Inc. | Apparatuses and methods for adjusting delay of command signal path |
US10224938B2 (en) | 2017-07-26 | 2019-03-05 | Micron Technology, Inc. | Apparatuses and methods for indirectly detecting phase variations |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09311811A (ja) | 1996-05-23 | 1997-12-02 | Nec Eng Ltd | シングルポートram2方向アクセス回路 |
US6172935B1 (en) * | 1997-04-25 | 2001-01-09 | Micron Technology, Inc. | Synchronous dynamic random access memory device |
JP3535788B2 (ja) * | 1999-12-27 | 2004-06-07 | Necエレクトロニクス株式会社 | 半導体記憶装置 |
JP4201490B2 (ja) | 2000-04-28 | 2008-12-24 | 富士通マイクロエレクトロニクス株式会社 | 自動プリチャージ機能を有するメモリ回路及び自動内部コマンド機能を有する集積回路装置 |
JP3832218B2 (ja) | 2000-09-20 | 2006-10-11 | セイコーエプソン株式会社 | 半導体メモリ装置のリフレッシュを考慮した制御 |
JP2002304885A (ja) | 2001-04-05 | 2002-10-18 | Fujitsu Ltd | 半導体集積回路 |
JP4726334B2 (ja) * | 2001-06-13 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2004005821A (ja) * | 2002-05-31 | 2004-01-08 | Toshiba Corp | 同期型半導体記憶装置 |
-
2003
- 2003-09-16 JP JP2003323130A patent/JP4326294B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-13 US US10/938,615 patent/US7042769B2/en not_active Expired - Lifetime
- 2004-09-15 KR KR1020040073882A patent/KR100635419B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2005092957A (ja) | 2005-04-07 |
KR20050027957A (ko) | 2005-03-21 |
US20050058012A1 (en) | 2005-03-17 |
US7042769B2 (en) | 2006-05-09 |
KR100635419B1 (ko) | 2006-10-18 |
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