DE60133618D1 - Verfahren und Vorrichtung zur Reinigung von einem einzigem Substrat - Google Patents

Verfahren und Vorrichtung zur Reinigung von einem einzigem Substrat

Info

Publication number
DE60133618D1
DE60133618D1 DE60133618T DE60133618T DE60133618D1 DE 60133618 D1 DE60133618 D1 DE 60133618D1 DE 60133618 T DE60133618 T DE 60133618T DE 60133618 T DE60133618 T DE 60133618T DE 60133618 D1 DE60133618 D1 DE 60133618D1
Authority
DE
Germany
Prior art keywords
wafer
cleaning
supplied
face
inert gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60133618T
Other languages
English (en)
Other versions
DE60133618T2 (de
Inventor
Yuji Ono
Ryoichi Ohkura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SES Co Ltd
Original Assignee
SES Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SES Co Ltd filed Critical SES Co Ltd
Publication of DE60133618D1 publication Critical patent/DE60133618D1/de
Application granted granted Critical
Publication of DE60133618T2 publication Critical patent/DE60133618T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
DE60133618T 2000-12-05 2001-08-28 Verfahren und Vorrichtung zur Reinigung von einem einzigem Substrat Expired - Fee Related DE60133618T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000370718 2000-12-05
JP2000370718A JP2002176026A (ja) 2000-12-05 2000-12-05 枚葉式基板洗浄方法および枚葉式基板洗浄装置

Publications (2)

Publication Number Publication Date
DE60133618D1 true DE60133618D1 (de) 2008-05-29
DE60133618T2 DE60133618T2 (de) 2008-08-07

Family

ID=18840556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60133618T Expired - Fee Related DE60133618T2 (de) 2000-12-05 2001-08-28 Verfahren und Vorrichtung zur Reinigung von einem einzigem Substrat

Country Status (10)

Country Link
US (2) US7029538B2 (de)
EP (1) EP1213746B1 (de)
JP (1) JP2002176026A (de)
KR (1) KR100812482B1 (de)
CN (1) CN1217386C (de)
AT (1) ATE392709T1 (de)
DE (1) DE60133618T2 (de)
IL (1) IL145118A0 (de)
SG (1) SG101461A1 (de)
TW (1) TW518684B (de)

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US7000622B2 (en) * 2002-09-30 2006-02-21 Lam Research Corporation Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
JP2003007664A (ja) * 2001-06-22 2003-01-10 Ses Co Ltd 枚葉式基板洗浄方法および枚葉式基板洗浄装置
JP4262004B2 (ja) 2002-08-29 2009-05-13 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US7584760B2 (en) * 2002-09-13 2009-09-08 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US6818566B2 (en) * 2002-10-18 2004-11-16 The Boc Group, Inc. Thermal activation of fluorine for use in a semiconductor chamber
JP2004266212A (ja) * 2003-03-04 2004-09-24 Tadahiro Omi 基板の処理システム
US20040238008A1 (en) * 2003-03-12 2004-12-02 Savas Stephen E. Systems and methods for cleaning semiconductor substrates using a reduced volume of liquid
US6823876B1 (en) * 2003-09-02 2004-11-30 Macronix International Co., Ltd. Methodology of rotational etching tool maintenance
US7431040B2 (en) * 2003-09-30 2008-10-07 Tokyo Electron Limited Method and apparatus for dispensing a rinse solution on a substrate
US8211242B2 (en) 2005-02-07 2012-07-03 Ebara Corporation Substrate processing method, substrate processing apparatus, and control program
KR100727703B1 (ko) * 2005-12-06 2007-06-13 동부일렉트로닉스 주식회사 반도체 소자 제조용 케미컬 공급장치
KR101019445B1 (ko) * 2006-04-18 2011-03-07 도쿄엘렉트론가부시키가이샤 액 처리 장치
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KR100831989B1 (ko) * 2006-08-30 2008-05-23 세메스 주식회사 기판 처리 장치
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KR101418360B1 (ko) * 2007-03-07 2014-07-09 주식회사 케이씨텍 비접촉식 기판세정장치
JP5153296B2 (ja) * 2007-10-31 2013-02-27 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
KR100897547B1 (ko) * 2007-11-05 2009-05-15 세메스 주식회사 기판 처리 장치 및 방법
CN101673062B (zh) * 2008-09-09 2011-10-26 中芯国际集成电路制造(北京)有限公司 一种全湿法去胶的装置
CN102410711B (zh) * 2010-09-21 2014-02-26 如皋市大昌电子有限公司 一种二极管脱水机
US8926788B2 (en) 2010-10-27 2015-01-06 Lam Research Ag Closed chamber for wafer wet processing
US9997379B2 (en) * 2010-11-30 2018-06-12 Lam Research Ag Method and apparatus for wafer wet processing
JP5829082B2 (ja) * 2011-09-09 2015-12-09 オリンパス株式会社 洗浄装置
US20130068264A1 (en) * 2011-09-21 2013-03-21 Nanya Technology Corporation Wafer scrubber apparatus
US20130171832A1 (en) * 2011-12-28 2013-07-04 Intermolecular Inc. Enhanced Isolation For Combinatorial Atomic Layer Deposition (ALD)
US20130269612A1 (en) * 2012-04-16 2013-10-17 Hermes-Epitek Corporation Gas Treatment Apparatus with Surrounding Spray Curtains
KR101512560B1 (ko) 2012-08-31 2015-04-15 가부시키가이샤 스크린 홀딩스 기판처리장치
JP5973299B2 (ja) * 2012-09-25 2016-08-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6010398B2 (ja) * 2012-08-31 2016-10-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN102915909A (zh) * 2012-10-08 2013-02-06 上海华力微电子有限公司 一种改进酸槽式硅片清洗设备内环境的方法
KR101925581B1 (ko) * 2012-11-23 2018-12-05 주식회사 원익아이피에스 챔버 세정 방법
KR101536718B1 (ko) * 2013-01-31 2015-07-15 세메스 주식회사 지지 유닛, 이송 유닛, 기판 처리 장치, 그리고 기판 처리 장치를 이용한 기판 처리 방법
US10707099B2 (en) 2013-08-12 2020-07-07 Veeco Instruments Inc. Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle
KR101972294B1 (ko) 2014-03-28 2019-04-24 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
CN104438201A (zh) * 2014-11-26 2015-03-25 乐山新天源太阳能科技有限公司 一种硅料清洗工艺及其设备
TWI582886B (zh) * 2016-01-12 2017-05-11 弘塑科技股份有限公司 單晶圓溼式處理裝置
CN106824884A (zh) * 2017-03-31 2017-06-13 贵州大学 一种硅片翻转冲洗装置
US11342215B2 (en) 2017-04-25 2022-05-24 Veeco Instruments Inc. Semiconductor wafer processing chamber
JP2019054112A (ja) * 2017-09-15 2019-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板乾燥装置
JP6442018B2 (ja) * 2017-10-04 2018-12-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6990602B2 (ja) * 2018-02-27 2022-01-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体
WO2020039849A1 (ja) * 2018-08-22 2020-02-27 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN110148573B (zh) * 2019-04-17 2020-12-04 湖州达立智能设备制造有限公司 一种半导体设备工艺腔的晶圆升降装置
JP7315389B2 (ja) * 2019-06-28 2023-07-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN115143746B (zh) * 2022-07-25 2023-05-12 广东技术师范大学 一种大功率模组生产堆叠式热烘除湿装置
US20240047256A1 (en) * 2022-08-02 2024-02-08 Applied Materials, Inc. Centering wafer for processing chamber

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Also Published As

Publication number Publication date
SG101461A1 (en) 2004-01-30
KR20020044536A (ko) 2002-06-15
JP2002176026A (ja) 2002-06-21
US7029538B2 (en) 2006-04-18
EP1213746A2 (de) 2002-06-12
EP1213746B1 (de) 2008-04-16
EP1213746A3 (de) 2006-04-05
TW518684B (en) 2003-01-21
CN1357907A (zh) 2002-07-10
CN1217386C (zh) 2005-08-31
IL145118A0 (en) 2002-06-30
DE60133618T2 (de) 2008-08-07
US20020074020A1 (en) 2002-06-20
US6807974B2 (en) 2004-10-26
US20030047192A1 (en) 2003-03-13
ATE392709T1 (de) 2008-05-15
KR100812482B1 (ko) 2008-03-10

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