DE4318028A1 - Flüssigkristallanzeigeeinrichtung und Verfahren zu deren Herstellung - Google Patents
Flüssigkristallanzeigeeinrichtung und Verfahren zu deren HerstellungInfo
- Publication number
- DE4318028A1 DE4318028A1 DE4318028A DE4318028A DE4318028A1 DE 4318028 A1 DE4318028 A1 DE 4318028A1 DE 4318028 A DE4318028 A DE 4318028A DE 4318028 A DE4318028 A DE 4318028A DE 4318028 A1 DE4318028 A1 DE 4318028A1
- Authority
- DE
- Germany
- Prior art keywords
- liquid crystal
- scanning signal
- crystal display
- signal lines
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
Description
Claims (27)
- - wenigstens einem transparenten Träger (100),
- - einer Mehrzahl von Abtastsignalleitungen (1; 1a, 1b) und Anzeigesignalleitungen (5) in einer Matrixanordnung auf einer Oberfläche des transparenten Trägers (100) zur Festlegung einer Matrix von Bildpunktbereichen, von denen jeder von einem Paar von Abtastsignalleitungen (1; 1a, 1b) und einem Paar von Anzeigesignalleitungen (5a) begrenzt ist,
- - einer Bildpunktelektrode (4) in jedem Bildpunktbereich,
- - einem Schaltelement in jedem Bildpunktbereich, das mit einer zugehörigen Anzeigesignalleitung (5a) und einer zugehörigen Bildpunktelektrode (4) verbunden ist, und
- - einer mit einer jeweiligen Abtastsignalleitung verbundene erste Elektrode (10) in jedem Bildpunktbereich zur Bildung eines jeweiligen Speicherkondensators mit der zugehörigen Bildpunktelektrode (4), wobei jede erste Elektrode der zugehörigen Bildpunktelektrode (4) gegenüberliegt, dadurch gekennzeichnet, daß
- - jede erste Elektrode (10) die zugehörige Bildpunktelektrode (4) ringförmig umgibt, und
- - jeweils zwei verschiedene Verbindungsabschnitte (1, 12; 1a, 1b) zur elektrischen Verbindung von jeweils zwei ersten Elektroden (10) benachbarter Bildpunktbereiche vorgesehen sind.
- - jede Abtastsignalleitung aus einem Paar einer ersten (1a) und einer zweiten Abtastsignalleitung (1b) besteht, die abwechselnd in vorbestimmten Abständen auf der Oberfläche des transparenten Trägers (100) angeordnet sind, wobei
- - die Bildpunktbereiche jeweils durch eine erste und eine zweite Abtastsignalleitung (1a und 1b) sowie zwei benachbarte Anzeigesignalleitungen (5a) begrenzt sind und wobei
- - die jeweiligen zwei Verbindungsabschnitte zur Verbindung benachbarter erster Elektroden (10) von einem Abschnitt einer ersten Abtastsignalleitung (1a) und einem Abschnitt einer zweiten Abtastsignalleitung (1b) gebildet sind.
- - eine von einem vorspringenden Teil einer Abtastsignalleitung gebildete Gate-Elektrode (G),
- - eine von einem vorspringenden Teil einer Anzeigesignalleitung (5a) gebildete Drain-Elektrode,
- - eine mit einem Teil der zugehörigen Bildpunktelektrode (4) überlappende Source-Elektrode (5b), und
- - eine Halbleiterschicht (3), die auf einer auf der Gate- Elektrode befindlichen Isolationsschicht gebildet und zur Verbindung der Drain-Elektrode mit der Source-Elektrode strukturiert ist.
- - eine auf der ersten Abtastsignalleitung (1a) gebildete Gate-Elektrode,
- - eine aus einem vorspringenden Teil der Anzeigesignalleitung (5a) gebildete Drain-Elektrode,
- - eine mit einem Teil der Bildpunktelektrode (4) überlappende Source-Elektrode (5b) und
- - eine Halbleiterschicht (3), die auf einer auf der Gate- Elektrode befindlichen Isolationsschicht gebildet und zur Verbindung der Drain-Elektrode mit der Source-Elektrode strukturiert ist.
- - der Glasträger (100) ein rückseitiger Glasträger mit einer Innen- und einer Außenfläche ist,
- - ein weiterer frontseitiger Glasträger (101) mit einer Innen- und einer Außenseite vorgesehen ist, der parallel zum rückseitigen Glasträger von diesem in einem vorbestimmten Abstand separiert angeordnet ist, so daß seine Innenseite der Innenseite des rückseitigen Glasträgers (100) gegenüber liegt,
- - die Mehrzahl von Abtastsignalleitungen und Anzeige signalleitungen (5a) an der Innenseite des rückseitigen Glasträgers (100) angeordnet sind,
- - eine Lichtabschirmschicht-Matrix (20) auf der Innenseite des frontseitigen Glasträgers (101) vorgesehen ist, die zur Festlegung lichttransmittierender Öffnungsflächen innerhalb der Bildpunktflächen ausgerichtet ist,
- - eine Farbfilterschicht (21) an der Innenseite des front seitigen Glasträgers (101) vorgesehen ist, die unter Bedeckung der lichttransmittierenden Öffnungsflächen und der Lichtabschirmschicht (20) eine lichttransmittierende Fläche beinhaltet,
- - eine auf der Farbfilterschicht (21) gebildete transparente Elektrode (23) vorgesehen ist und
- - eine zwischen den frontseitigen und den rückseitigen Glas träger (101 und 100) eingebrachte Flüssigkristallschicht vorgesehen ist.
- - Bildung einer ersten, lichtundurchlässigen, leitfähigen Schicht auf dem transparenten Träger (100),
- - Strukturierung der ersten, leitfähigen Schicht zur gleich zeitigen Bildung einer Mehrzahl von Abtastsignalleitungen (1; 1a, 1b) in einer regelmäßigen Anordnung, erster Elektroden (10) der Speicherkondensatoren, die jeweils mit den Abtast signalleitungen verbunden und innerhalb der Bildpunktflächen angeordnet sind, die jeweils durch die Abtastsignalleitungen und die Mehrzahl von die Abtastsignalleitungen schneidenden, noch zu bildenden Anzeigesignalleitungen (5a) festgelegt sind, sowie der Verbindungsabschnitte (12; 1a, 1b) zum Verbinden erster Elektroden (10) benachbarter Speicherkonden satoren,
- - nacheinander Bildung einer Isolationsschicht und einer Halbleiterschicht auf der Oberfläche der resultierenden Struktur,
- - Strukturierung der Halbleiterschicht, um die Halbleiter schicht (3) nur um Kreuzungsbereiche von Abtastsignal leitungen und Anzeigesignalleitungen herum zu belassen,
- - Auftragen einer transparenten, leitfähigen Schicht auf die Oberfläche der resultierenden Struktur,
- - Strukturierung der transparenten, leitfähigen Schicht zur Bildung der Bildpunktelektroden (4), die den ersten Elektroden (10) der Speicherkondensatoren längs einer Berandung derselben gegenüberliegen, und
- - Erzeugen einer Mehrzahl von regelmäßig angeordneten Anzeigesignalleitungen (5a) unter Überkreuzung mit den Abtastsignalleitungen sowie gegebenenfalls von Source- und Drain-Elektroden eines auf der Halbleiterschicht anzuordnenden Dünnschichttransistors.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR92-9510 | 1992-06-01 | ||
KR1019920009510A KR950008938B1 (ko) | 1992-06-01 | 1992-06-01 | 액정 표시장치 |
KR1019920016300A KR100265751B1 (ko) | 1992-09-07 | 1992-09-07 | 액정표시장치 및 그 제조방법 |
KR92-16300 | 1992-09-07 | ||
KR1019920017901A KR940007574A (ko) | 1992-09-30 | 1992-09-30 | 액정 표시장치 |
KR92-17901 | 1992-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE4318028A1 true DE4318028A1 (de) | 1993-12-02 |
DE4318028B4 DE4318028B4 (de) | 2004-08-19 |
Family
ID=27348829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4318028A Expired - Lifetime DE4318028B4 (de) | 1992-06-01 | 1993-05-29 | Flüssigkristallanzeigeeinrichtung und Verfahren zu deren Herstellung |
Country Status (4)
Country | Link |
---|---|
US (4) | US5517341A (de) |
JP (1) | JP2537329B2 (de) |
DE (1) | DE4318028B4 (de) |
NL (1) | NL194848C (de) |
Cited By (1)
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---|---|---|---|---|
EP0772183A3 (de) * | 1995-11-01 | 1998-07-22 | Samsung Electronics Co., Ltd. | Matrix-Anzeige mit reparierbaren Pixeln und Reparaturverfahren dafür |
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- 1993-05-31 JP JP12928293A patent/JP2537329B2/ja not_active Expired - Lifetime
- 1993-06-01 US US08/070,717 patent/US5517341A/en not_active Expired - Lifetime
-
1996
- 1996-02-23 US US08/606,345 patent/US5686977A/en not_active Expired - Lifetime
- 1996-02-23 US US08/602,104 patent/US5696566A/en not_active Expired - Lifetime
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1997
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Cited By (3)
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EP0772183A3 (de) * | 1995-11-01 | 1998-07-22 | Samsung Electronics Co., Ltd. | Matrix-Anzeige mit reparierbaren Pixeln und Reparaturverfahren dafür |
US6100948A (en) * | 1995-11-01 | 2000-08-08 | Samsung Electronics Co., Ltd | Matrix-type display capable of being repaired by pixel unit and a repair method therefor |
US6888589B2 (en) | 1995-11-01 | 2005-05-03 | Samsung Electronics Co., Ltd. | Matrix-type display capable of being repaired by pixel unit and a repair method therefor |
Also Published As
Publication number | Publication date |
---|---|
JPH0651348A (ja) | 1994-02-25 |
US5847780A (en) | 1998-12-08 |
NL194848C (nl) | 2003-04-03 |
DE4318028B4 (de) | 2004-08-19 |
US5517341A (en) | 1996-05-14 |
NL194848B (nl) | 2002-12-02 |
US5686977A (en) | 1997-11-11 |
US5696566A (en) | 1997-12-09 |
NL9300895A (nl) | 1994-01-03 |
JP2537329B2 (ja) | 1996-09-25 |
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