DE4010720C2 - Verfahren zur Herstellung eines geschichteten Grabenkondensators zur Verwendung in einem dynamischen Speicher - Google Patents
Verfahren zur Herstellung eines geschichteten Grabenkondensators zur Verwendung in einem dynamischen SpeicherInfo
- Publication number
- DE4010720C2 DE4010720C2 DE4010720A DE4010720A DE4010720C2 DE 4010720 C2 DE4010720 C2 DE 4010720C2 DE 4010720 A DE4010720 A DE 4010720A DE 4010720 A DE4010720 A DE 4010720A DE 4010720 C2 DE4010720 C2 DE 4010720C2
- Authority
- DE
- Germany
- Prior art keywords
- trench
- silicon layer
- layer
- thermal oxide
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890012019A KR930006973B1 (ko) | 1989-08-23 | 1989-08-23 | 디램의 스택 트렌치 커패시터 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4010720A1 DE4010720A1 (de) | 1991-02-28 |
| DE4010720C2 true DE4010720C2 (de) | 1994-05-05 |
Family
ID=19289171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4010720A Expired - Fee Related DE4010720C2 (de) | 1989-08-23 | 1990-04-03 | Verfahren zur Herstellung eines geschichteten Grabenkondensators zur Verwendung in einem dynamischen Speicher |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH0724282B2 (ko) |
| KR (1) | KR930006973B1 (ko) |
| DE (1) | DE4010720C2 (ko) |
| FR (1) | FR2651368B1 (ko) |
| GB (1) | GB2235335B (ko) |
| NL (1) | NL193765C (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000058506A (ko) * | 2000-06-07 | 2000-10-05 | 이순환 | 열기관 압축링에 삽입하여 열효율을 높이는 황동핀 |
| GB201617276D0 (en) | 2016-10-11 | 2016-11-23 | Big Solar Limited | Energy storage |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62120070A (ja) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | 半導体記憶装置 |
| JPH01101664A (ja) * | 1987-10-15 | 1989-04-19 | Nec Corp | 半導体集積回路装置 |
| JPH01179450A (ja) * | 1988-01-08 | 1989-07-17 | Oki Electric Ind Co Ltd | Ｍｏｓ型ダイナミックメモリ集積回路とその製造方法 |
| KR900019227A (ko) * | 1988-05-18 | 1990-12-24 | 아오이 죠이치 | 적층형 캐피시터를 갖춘 반도체기억장치 및 그 제조방법 |
| JPH02177359A (ja) * | 1988-12-27 | 1990-07-10 | Nec Corp | 半導体記憶装置 |
| JP4093614B2 (ja) * | 1997-06-11 | 2008-06-04 | 旭化成ケミカルズ株式会社 | 固着剤組成物 |
| JPH1179450A (ja) * | 1997-09-12 | 1999-03-23 | Mita Ind Co Ltd | 自動原稿搬送装置の原稿分離機構 |
-
1989
- 1989-08-23 KR KR1019890012019A patent/KR930006973B1/ko not_active IP Right Cessation
-
1990
- 1990-04-03 DE DE4010720A patent/DE4010720C2/de not_active Expired - Fee Related
- 1990-04-27 JP JP2110678A patent/JPH0724282B2/ja not_active Expired - Fee Related
- 1990-05-30 FR FR909006733A patent/FR2651368B1/fr not_active Expired - Lifetime
- 1990-08-03 GB GB9017025A patent/GB2235335B/en not_active Expired - Fee Related
- 1990-08-21 NL NL9001849A patent/NL193765C/nl not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE4010720A1 (de) | 1991-02-28 |
| GB9017025D0 (en) | 1990-09-19 |
| NL193765C (nl) | 2000-09-04 |
| JPH0724282B2 (ja) | 1995-03-15 |
| NL9001849A (nl) | 1991-03-18 |
| GB2235335A (en) | 1991-02-27 |
| FR2651368A1 (fr) | 1991-03-01 |
| JPH0385757A (ja) | 1991-04-10 |
| FR2651368B1 (fr) | 1991-11-29 |
| GB2235335B (en) | 1994-03-02 |
| KR910005297A (ko) | 1991-03-30 |
| KR930006973B1 (ko) | 1993-07-24 |
| NL193765B (nl) | 2000-05-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |