NL193765B - Werkwijze voor de vervaardiging van gestapelde sleufcondensatoren voor DRAM's. - Google Patents

Werkwijze voor de vervaardiging van gestapelde sleufcondensatoren voor DRAM's.

Info

Publication number
NL193765B
NL193765B NL9001849A NL9001849A NL193765B NL 193765 B NL193765 B NL 193765B NL 9001849 A NL9001849 A NL 9001849A NL 9001849 A NL9001849 A NL 9001849A NL 193765 B NL193765 B NL 193765B
Authority
NL
Netherlands
Prior art keywords
drams
manufacture
stacked slot
capacitors
slot capacitors
Prior art date
Application number
NL9001849A
Other languages
English (en)
Other versions
NL193765C (nl
NL9001849A (nl
Original Assignee
Gold Star Electronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Electronics filed Critical Gold Star Electronics
Publication of NL9001849A publication Critical patent/NL9001849A/nl
Publication of NL193765B publication Critical patent/NL193765B/nl
Application granted granted Critical
Publication of NL193765C publication Critical patent/NL193765C/nl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03Making the capacitor or connections thereto
    • H10B12/038Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
NL9001849A 1989-08-23 1990-08-21 Werkwijze voor de vervaardiging van gestapelde sleufcondensatoren voor DRAM's. NL193765C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019890012019A KR930006973B1 (ko) 1989-08-23 1989-08-23 디램의 스택 트렌치 커패시터 제조방법
KR890012019 1989-08-23

Publications (3)

Publication Number Publication Date
NL9001849A NL9001849A (nl) 1991-03-18
NL193765B true NL193765B (nl) 2000-05-01
NL193765C NL193765C (nl) 2000-09-04

Family

ID=19289171

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9001849A NL193765C (nl) 1989-08-23 1990-08-21 Werkwijze voor de vervaardiging van gestapelde sleufcondensatoren voor DRAM's.

Country Status (6)

Country Link
JP (1) JPH0724282B2 (nl)
KR (1) KR930006973B1 (nl)
DE (1) DE4010720C2 (nl)
FR (1) FR2651368B1 (nl)
GB (1) GB2235335B (nl)
NL (1) NL193765C (nl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000058506A (ko) * 2000-06-07 2000-10-05 이순환 열기관 압축링에 삽입하여 열효율을 높이는 황동핀
GB201617276D0 (en) 2016-10-11 2016-11-23 Big Solar Limited Energy storage

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPH01101664A (ja) * 1987-10-15 1989-04-19 Nec Corp 半導体集積回路装置
JPH01179450A (ja) * 1988-01-08 1989-07-17 Oki Electric Ind Co Ltd Mos型ダイナミックメモリ集積回路とその製造方法
KR900019227A (ko) * 1988-05-18 1990-12-24 아오이 죠이치 적층형 캐피시터를 갖춘 반도체기억장치 및 그 제조방법
JPH02177359A (ja) * 1988-12-27 1990-07-10 Nec Corp 半導体記憶装置
JP4093614B2 (ja) * 1997-06-11 2008-06-04 旭化成ケミカルズ株式会社 固着剤組成物
JPH1179450A (ja) * 1997-09-12 1999-03-23 Mita Ind Co Ltd 自動原稿搬送装置の原稿分離機構

Also Published As

Publication number Publication date
DE4010720A1 (de) 1991-02-28
DE4010720C2 (de) 1994-05-05
GB9017025D0 (en) 1990-09-19
NL193765C (nl) 2000-09-04
JPH0724282B2 (ja) 1995-03-15
NL9001849A (nl) 1991-03-18
GB2235335A (en) 1991-02-27
FR2651368A1 (fr) 1991-03-01
JPH0385757A (ja) 1991-04-10
FR2651368B1 (fr) 1991-11-29
GB2235335B (en) 1994-03-02
KR910005297A (ko) 1991-03-30
KR930006973B1 (ko) 1993-07-24

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 20070301