NL193765B - Process for the manufacture of stacked slot capacitors for DRAMs. - Google Patents

Process for the manufacture of stacked slot capacitors for DRAMs.

Info

Publication number
NL193765B
NL193765B NL9001849A NL9001849A NL193765B NL 193765 B NL193765 B NL 193765B NL 9001849 A NL9001849 A NL 9001849A NL 9001849 A NL9001849 A NL 9001849A NL 193765 B NL193765 B NL 193765B
Authority
NL
Netherlands
Prior art keywords
drams
manufacture
stacked slot
capacitors
slot capacitors
Prior art date
Application number
NL9001849A
Other languages
Dutch (nl)
Other versions
NL193765C (en
NL9001849A (en
Original Assignee
Gold Star Electronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Electronics filed Critical Gold Star Electronics
Publication of NL9001849A publication Critical patent/NL9001849A/en
Publication of NL193765B publication Critical patent/NL193765B/en
Application granted granted Critical
Publication of NL193765C publication Critical patent/NL193765C/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03Making the capacitor or connections thereto
    • H10B12/038Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
NL9001849A 1989-08-23 1990-08-21 Process for the manufacture of stacked slot capacitors for DRAMs. NL193765C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR890012019 1989-08-23
KR1019890012019A KR930006973B1 (en) 1989-08-23 1989-08-23 Method for fabricating of stacked trench capacitor

Publications (3)

Publication Number Publication Date
NL9001849A NL9001849A (en) 1991-03-18
NL193765B true NL193765B (en) 2000-05-01
NL193765C NL193765C (en) 2000-09-04

Family

ID=19289171

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9001849A NL193765C (en) 1989-08-23 1990-08-21 Process for the manufacture of stacked slot capacitors for DRAMs.

Country Status (6)

Country Link
JP (1) JPH0724282B2 (en)
KR (1) KR930006973B1 (en)
DE (1) DE4010720C2 (en)
FR (1) FR2651368B1 (en)
GB (1) GB2235335B (en)
NL (1) NL193765C (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000058506A (en) * 2000-06-07 2000-10-05 이순환 Brass pin inserted into heat engine compression ring to increase thermal efficiency
GB201617276D0 (en) 2016-10-11 2016-11-23 Big Solar Limited Energy storage

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120070A (en) * 1985-11-20 1987-06-01 Toshiba Corp Semiconductor memory
JPH01101664A (en) * 1987-10-15 1989-04-19 Nec Corp Semiconductor integrated circuit device
JPH01179450A (en) * 1988-01-08 1989-07-17 Oki Electric Ind Co Ltd Mos dynamic memory integrated circuit and manufacture thereof
US4951175A (en) * 1988-05-18 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor memory device with stacked capacitor structure and the manufacturing method thereof
JPH02177359A (en) * 1988-12-27 1990-07-10 Nec Corp Semiconductor storage device
JP4093614B2 (en) * 1997-06-11 2008-06-04 旭化成ケミカルズ株式会社 Adhesive composition
JPH1179450A (en) * 1997-09-12 1999-03-23 Mita Ind Co Ltd Document separating mechanism of automatic document feeding device

Also Published As

Publication number Publication date
JPH0724282B2 (en) 1995-03-15
NL193765C (en) 2000-09-04
GB9017025D0 (en) 1990-09-19
FR2651368B1 (en) 1991-11-29
DE4010720A1 (en) 1991-02-28
KR930006973B1 (en) 1993-07-24
FR2651368A1 (en) 1991-03-01
DE4010720C2 (en) 1994-05-05
KR910005297A (en) 1991-03-30
GB2235335A (en) 1991-02-27
GB2235335B (en) 1994-03-02
JPH0385757A (en) 1991-04-10
NL9001849A (en) 1991-03-18

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 20070301