DE69429146T2 - DRAM-Zellenstruktur mit Grabenkondensator - Google Patents
DRAM-Zellenstruktur mit GrabenkondensatorInfo
- Publication number
- DE69429146T2 DE69429146T2 DE69429146T DE69429146T DE69429146T2 DE 69429146 T2 DE69429146 T2 DE 69429146T2 DE 69429146 T DE69429146 T DE 69429146T DE 69429146 T DE69429146 T DE 69429146T DE 69429146 T2 DE69429146 T2 DE 69429146T2
- Authority
- DE
- Germany
- Prior art keywords
- cell structure
- dram cell
- trench capacitor
- trench
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22995693A JP3480745B2 (ja) | 1993-09-16 | 1993-09-16 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69429146D1 DE69429146D1 (de) | 2002-01-03 |
DE69429146T2 true DE69429146T2 (de) | 2002-07-18 |
Family
ID=16900348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69429146T Expired - Lifetime DE69429146T2 (de) | 1993-09-16 | 1994-09-16 | DRAM-Zellenstruktur mit Grabenkondensator |
Country Status (6)
Country | Link |
---|---|
US (2) | US6100130A (de) |
EP (1) | EP0644591B1 (de) |
JP (1) | JP3480745B2 (de) |
KR (1) | KR100226591B1 (de) |
DE (1) | DE69429146T2 (de) |
TW (1) | TW262586B (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6207494B1 (en) * | 1994-12-29 | 2001-03-27 | Infineon Technologies Corporation | Isolation collar nitride liner for DRAM process improvement |
EP0735581A1 (de) * | 1995-03-30 | 1996-10-02 | Siemens Aktiengesellschaft | DRAM-Grabenkondensator mit isolierendem Ring |
US5656535A (en) * | 1996-03-04 | 1997-08-12 | Siemens Aktiengesellschaft | Storage node process for deep trench-based DRAM |
US5717628A (en) * | 1996-03-04 | 1998-02-10 | Siemens Aktiengesellschaft | Nitride cap formation in a DRAM trench capacitor |
US6008103A (en) * | 1998-02-27 | 1999-12-28 | Siemens Aktiengesellschaft | Method for forming trench capacitors in an integrated circuit |
TW409408B (en) * | 1998-03-31 | 2000-10-21 | Siemens Ag | Method and apparatus having improved control of a buried strap in trench capacitors |
US6281068B1 (en) * | 1998-04-30 | 2001-08-28 | International Business Machines Corporation | Method for buried plate formation in deep trench capacitors |
GB2341483B (en) * | 1998-09-11 | 2003-10-01 | Siemens Plc | Improved process for dram cell production |
DE19842665C2 (de) * | 1998-09-17 | 2001-10-11 | Infineon Technologies Ag | Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen |
DE19843641A1 (de) * | 1998-09-23 | 2000-04-20 | Siemens Ag | Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren |
TW429613B (en) * | 1999-10-21 | 2001-04-11 | Mosel Vitelic Inc | Dynamic random access memory with trench type capacitor |
DE19957123B4 (de) * | 1999-11-26 | 2006-11-16 | Infineon Technologies Ag | Verfahren zur Herstellung einer Zellenanordnung für einen dynamischen Halbleiterspeicher |
US6437381B1 (en) * | 2000-04-27 | 2002-08-20 | International Business Machines Corporation | Semiconductor memory device with reduced orientation-dependent oxidation in trench structures |
US6309924B1 (en) * | 2000-06-02 | 2001-10-30 | International Business Machines Corporation | Method of forming self-limiting polysilicon LOCOS for DRAM cell |
US6376324B1 (en) * | 2000-06-23 | 2002-04-23 | International Business Machines Corporation | Collar process for reduced deep trench edge bias |
TW466684B (en) * | 2000-09-29 | 2001-12-01 | United Microelectronics Corp | Method for forming deep trench capacitor under shallow trench isolation structure |
DE10142580B4 (de) * | 2001-08-31 | 2006-07-13 | Infineon Technologies Ag | Verfahren zur Herstellung einer Grabenstrukturkondensatoreinrichtung |
JP2003179148A (ja) * | 2001-10-04 | 2003-06-27 | Denso Corp | 半導体基板およびその製造方法 |
US7005338B2 (en) * | 2002-09-19 | 2006-02-28 | Promos Technologies Inc. | Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate |
US20050176198A1 (en) * | 2004-02-11 | 2005-08-11 | Kudelka Stephan P. | Method of fabricating bottle trench capacitors using an electrochemical etch with electrochemical etch stop |
JP2006210512A (ja) * | 2005-01-26 | 2006-08-10 | Toshiba Corp | 半導体装置、及び、半導体装置の製造方法 |
US7964514B2 (en) * | 2006-03-02 | 2011-06-21 | Applied Materials, Inc. | Multiple nitrogen plasma treatments for thin SiON dielectrics |
US8106511B2 (en) * | 2008-02-28 | 2012-01-31 | Qimonda Ag | Reduced-stress through-chip feature and method of making the same |
EP2568547B1 (de) | 2011-09-06 | 2014-04-16 | Leica Geosystems AG | Monitordiodenloser Lasertreiber |
US8642423B2 (en) | 2011-11-30 | 2014-02-04 | International Business Machines Corporation | Polysilicon/metal contact resistance in deep trench |
US9960168B2 (en) | 2014-12-24 | 2018-05-01 | Globalfoundries Inc. | Capacitor strap connection structure and fabrication method |
US9818741B2 (en) | 2015-06-30 | 2017-11-14 | International Business Machines Corporation | Structure and method to prevent EPI short between trenches in FINFET eDRAM |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60152058A (ja) * | 1984-01-20 | 1985-08-10 | Toshiba Corp | 半導体記憶装置 |
US4801989A (en) * | 1986-02-20 | 1989-01-31 | Fujitsu Limited | Dynamic random access memory having trench capacitor with polysilicon lined lower electrode |
JPH0797621B2 (ja) | 1986-03-03 | 1995-10-18 | 富士通株式会社 | ダイナミツクランダムアクセスメモリ |
US4801988A (en) * | 1986-10-31 | 1989-01-31 | International Business Machines Corporation | Semiconductor trench capacitor cell with merged isolation and node trench construction |
US4918502A (en) * | 1986-11-28 | 1990-04-17 | Hitachi, Ltd. | Semiconductor memory having trench capacitor formed with sheath electrode |
JPS6427252A (en) * | 1987-04-13 | 1989-01-30 | Nec Corp | Semiconductor storage device |
JPS63258060A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 半導体記憶装置 |
US4794434A (en) * | 1987-07-06 | 1988-12-27 | Motorola, Inc. | Trench cell for a dram |
JPH01192157A (ja) * | 1988-01-27 | 1989-08-02 | Nec Corp | 半導体装置 |
JPH025467A (ja) | 1988-06-23 | 1990-01-10 | Texas Instr Japan Ltd | 半導体装置 |
JPH029166A (ja) * | 1988-06-28 | 1990-01-12 | Oki Electric Ind Co Ltd | 半導体メモリ装置 |
KR910001985B1 (ko) | 1988-09-22 | 1991-03-30 | 현대전자산업 주식회사 | Sdht 구조로 이루어진 트렌치 캐패시터 셀 및 그 제조방법 |
US5017506A (en) * | 1989-07-25 | 1991-05-21 | Texas Instruments Incorporated | Method for fabricating a trench DRAM |
JP3208153B2 (ja) | 1991-07-03 | 2001-09-10 | 株式会社東芝 | 半導体装置およびその製造方法 |
JPH0563155A (ja) | 1991-08-30 | 1993-03-12 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
JP2994110B2 (ja) * | 1991-09-09 | 1999-12-27 | 株式会社東芝 | 半導体記憶装置 |
JPH0637275A (ja) * | 1992-07-13 | 1994-02-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US5422294A (en) * | 1993-05-03 | 1995-06-06 | Noble, Jr.; Wendell P. | Method of making a trench capacitor field shield with sidewall contact |
US5406515A (en) * | 1993-12-01 | 1995-04-11 | International Business Machines Corporation | Method for fabricating low leakage substrate plate trench DRAM cells and devices formed thereby |
-
1993
- 1993-09-16 JP JP22995693A patent/JP3480745B2/ja not_active Expired - Lifetime
-
1994
- 1994-09-12 KR KR1019940022882A patent/KR100226591B1/ko not_active IP Right Cessation
- 1994-09-16 DE DE69429146T patent/DE69429146T2/de not_active Expired - Lifetime
- 1994-09-16 EP EP94114596A patent/EP0644591B1/de not_active Expired - Lifetime
- 1994-10-20 TW TW083109729A patent/TW262586B/zh not_active IP Right Cessation
-
1997
- 1997-04-04 US US08/825,993 patent/US6100130A/en not_active Expired - Lifetime
-
2000
- 2000-02-04 US US09/497,690 patent/US6534814B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69429146D1 (de) | 2002-01-03 |
EP0644591A1 (de) | 1995-03-22 |
JP3480745B2 (ja) | 2003-12-22 |
JPH0786432A (ja) | 1995-03-31 |
KR950010090A (ko) | 1995-04-26 |
US6534814B2 (en) | 2003-03-18 |
US6100130A (en) | 2000-08-08 |
EP0644591B1 (de) | 2001-11-21 |
TW262586B (de) | 1995-11-11 |
US20020072183A1 (en) | 2002-06-13 |
KR100226591B1 (ko) | 1999-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |