DE69119354D1 - DRAM Zelle mit Stapelkondensator - Google Patents

DRAM Zelle mit Stapelkondensator

Info

Publication number
DE69119354D1
DE69119354D1 DE69119354T DE69119354T DE69119354D1 DE 69119354 D1 DE69119354 D1 DE 69119354D1 DE 69119354 T DE69119354 T DE 69119354T DE 69119354 T DE69119354 T DE 69119354T DE 69119354 D1 DE69119354 D1 DE 69119354D1
Authority
DE
Germany
Prior art keywords
dram cell
stacked capacitor
capacitor
stacked
dram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119354T
Other languages
English (en)
Other versions
DE69119354T2 (de
Inventor
Natsuki Sato
Takanori Saeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP03041474A external-priority patent/JP3104262B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69119354D1 publication Critical patent/DE69119354D1/de
Publication of DE69119354T2 publication Critical patent/DE69119354T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE69119354T 1990-10-29 1991-10-29 DRAM Zelle mit Stapelkondensator Expired - Fee Related DE69119354T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29153890 1990-10-29
JP03041474A JP3104262B2 (ja) 1991-03-07 1991-03-07 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69119354D1 true DE69119354D1 (de) 1996-06-13
DE69119354T2 DE69119354T2 (de) 1996-09-19

Family

ID=26381099

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119354T Expired - Fee Related DE69119354T2 (de) 1990-10-29 1991-10-29 DRAM Zelle mit Stapelkondensator

Country Status (4)

Country Link
US (2) US5504704A (de)
EP (1) EP0484088B1 (de)
KR (1) KR960016837B1 (de)
DE (1) DE69119354T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2542706B2 (ja) * 1989-10-05 1996-10-09 株式会社東芝 ダイナミックｒａｍ
JPH05198768A (ja) * 1992-01-21 1993-08-06 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
JPH0621018A (ja) * 1992-06-29 1994-01-28 Sony Corp ドライエッチング方法
KR960003771B1 (ko) * 1992-08-08 1996-03-22 삼성전자주식회사 반도체 메모리장치
US5436186A (en) * 1994-04-22 1995-07-25 United Microelectronics Corporation Process for fabricating a stacked capacitor
KR0136533B1 (ko) * 1994-06-09 1998-09-15 문정환 불휘발성 반도체 메모리 소자 및 그의 제조방법
KR960006030A (ko) * 1994-07-18 1996-02-23 김주용 반도체소자의 캐패시터 제조방법
JPH0831174A (ja) * 1994-07-18 1996-02-02 Fujitsu Ltd 半導体記憶装置
US5538592A (en) * 1994-07-22 1996-07-23 International Business Machines Corporation Non-random sub-lithography vertical stack capacitor
US5564180A (en) * 1994-11-14 1996-10-15 United Microelectronics Corp. Method of fabricating DRAM cell capacitor
KR0155785B1 (ko) * 1994-12-15 1998-10-15 김광호 핀형 커패시터 및 그 제조방법
US5672535A (en) * 1995-05-31 1997-09-30 Alliance Semiconductor Corporation Method of fabricating DRAM cell with self-aligned contact
DE19527023C1 (de) * 1995-07-24 1997-02-27 Siemens Ag Verfahren zur Herstellung eines Kondensators in einer Halbleiteranordnung
US5701264A (en) * 1995-12-13 1997-12-23 Alliance Semiconductor Corporation Dynamic random access memory cell having increased capacitance
US5792708A (en) * 1996-03-06 1998-08-11 Chartered Semiconductor Manufacturing Pte Ltd. Method for forming residue free patterned polysilicon layers upon high step height integrated circuit substrates
US5591664A (en) * 1996-03-20 1997-01-07 Taiwan Semiconductor Manufacturing Company Ltd. Method of increasing the capacitance area in DRAM stacked capacitors using a simplified process
US5994730A (en) * 1996-11-21 1999-11-30 Alliance Semiconductor Corporation DRAM cell having storage capacitor contact self-aligned to bit lines and word lines
TW311258B (en) * 1997-01-24 1997-07-21 United Microelectronics Corp Manufacturing method of stack capacitor of dynamic random access memory
JP3373134B2 (ja) * 1997-06-13 2003-02-04 沖電気工業株式会社 半導体装置の製造方法
US5970358A (en) * 1997-06-30 1999-10-19 Micron Technology, Inc. Method for forming a capacitor wherein the first capacitor plate includes electrically coupled conductive layers separated by an intervening insulative layer
US5903493A (en) * 1997-09-17 1999-05-11 Lucent Technologies Inc. Metal to metal capacitor apparatus and method for making
US6329703B1 (en) * 1998-02-25 2001-12-11 Infineon Technologies Ag Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact
US6210813B1 (en) * 1998-09-02 2001-04-03 Micron Technology, Inc. Forming metal silicide resistant to subsequent thermal processing
KR100311498B1 (ko) 1999-01-12 2001-11-02 김영환 반도체 소자의 이중 게이트 형성방법
KR100313510B1 (ko) 1999-04-02 2001-11-07 김영환 반도체 소자의 제조방법
EP1421607A2 (de) 2001-02-12 2004-05-26 ASM America, Inc. Verbesserter prozess zur ablagerung von halbleiterfilmen
US7320131B1 (en) * 2001-06-06 2008-01-15 Cisco Technology, Inc. Methods and apparatus for selecting a server to process a request
US7186630B2 (en) * 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US6746877B1 (en) * 2003-01-07 2004-06-08 Infineon Ag Encapsulation of ferroelectric capacitors
US7005160B2 (en) * 2003-04-24 2006-02-28 Asm America, Inc. Methods for depositing polycrystalline films with engineered grain structures
US8629063B2 (en) * 2011-06-08 2014-01-14 International Business Machines Corporation Forming features on a substrate having varying feature densities
US9048212B2 (en) 2012-05-15 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and methods of manufacturing capacitors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682783B2 (ja) * 1985-03-29 1994-10-19 三菱電機株式会社 容量およびその製造方法
DE3856143T2 (de) * 1987-06-17 1998-10-29 Fujitsu Ltd Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff
US4901043A (en) * 1987-07-02 1990-02-13 Andrew F. Tresness Compact filter having a multi-compartment housing
JPS6420050A (en) * 1987-07-14 1989-01-24 Maruka Kk Production of boneless fish
JPH01120050A (ja) * 1987-11-02 1989-05-12 Hitachi Ltd 半導体記憶装置
JPH0210762A (ja) * 1988-06-28 1990-01-16 Mitsubishi Electric Corp キャパシタ

Also Published As

Publication number Publication date
EP0484088B1 (de) 1996-05-08
DE69119354T2 (de) 1996-09-19
US5416037A (en) 1995-05-16
KR960016837B1 (en) 1996-12-21
US5504704A (en) 1996-04-02
EP0484088A1 (de) 1992-05-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: ELPIDA MEMORY, INC., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee