DE69429146D1 - DRAM-Zellenstruktur mit Grabenkondensator - Google Patents

DRAM-Zellenstruktur mit Grabenkondensator

Info

Publication number
DE69429146D1
DE69429146D1 DE69429146T DE69429146T DE69429146D1 DE 69429146 D1 DE69429146 D1 DE 69429146D1 DE 69429146 T DE69429146 T DE 69429146T DE 69429146 T DE69429146 T DE 69429146T DE 69429146 D1 DE69429146 D1 DE 69429146D1
Authority
DE
Germany
Prior art keywords
cell structure
dram cell
trench capacitor
trench
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69429146T
Other languages
English (en)
Other versions
DE69429146T2 (de
Inventor
Junichiro Iba
Yusuke Kohyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69429146D1 publication Critical patent/DE69429146D1/de
Publication of DE69429146T2 publication Critical patent/DE69429146T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69429146T 1993-09-16 1994-09-16 DRAM-Zellenstruktur mit Grabenkondensator Expired - Lifetime DE69429146T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22995693A JP3480745B2 (ja) 1993-09-16 1993-09-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69429146D1 true DE69429146D1 (de) 2002-01-03
DE69429146T2 DE69429146T2 (de) 2002-07-18

Family

ID=16900348

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69429146T Expired - Lifetime DE69429146T2 (de) 1993-09-16 1994-09-16 DRAM-Zellenstruktur mit Grabenkondensator

Country Status (6)

Country Link
US (2) US6100130A (de)
EP (1) EP0644591B1 (de)
JP (1) JP3480745B2 (de)
KR (1) KR100226591B1 (de)
DE (1) DE69429146T2 (de)
TW (1) TW262586B (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207494B1 (en) * 1994-12-29 2001-03-27 Infineon Technologies Corporation Isolation collar nitride liner for DRAM process improvement
EP0735581A1 (de) * 1995-03-30 1996-10-02 Siemens Aktiengesellschaft DRAM-Grabenkondensator mit isolierendem Ring
US5717628A (en) * 1996-03-04 1998-02-10 Siemens Aktiengesellschaft Nitride cap formation in a DRAM trench capacitor
US5656535A (en) * 1996-03-04 1997-08-12 Siemens Aktiengesellschaft Storage node process for deep trench-based DRAM
US6008103A (en) * 1998-02-27 1999-12-28 Siemens Aktiengesellschaft Method for forming trench capacitors in an integrated circuit
TW409408B (en) * 1998-03-31 2000-10-21 Siemens Ag Method and apparatus having improved control of a buried strap in trench capacitors
US6281068B1 (en) * 1998-04-30 2001-08-28 International Business Machines Corporation Method for buried plate formation in deep trench capacitors
GB2341483B (en) * 1998-09-11 2003-10-01 Siemens Plc Improved process for dram cell production
DE19842665C2 (de) 1998-09-17 2001-10-11 Infineon Technologies Ag Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen
DE19843641A1 (de) * 1998-09-23 2000-04-20 Siemens Ag Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren
TW429613B (en) * 1999-10-21 2001-04-11 Mosel Vitelic Inc Dynamic random access memory with trench type capacitor
DE19957123B4 (de) * 1999-11-26 2006-11-16 Infineon Technologies Ag Verfahren zur Herstellung einer Zellenanordnung für einen dynamischen Halbleiterspeicher
US6437381B1 (en) * 2000-04-27 2002-08-20 International Business Machines Corporation Semiconductor memory device with reduced orientation-dependent oxidation in trench structures
US6309924B1 (en) * 2000-06-02 2001-10-30 International Business Machines Corporation Method of forming self-limiting polysilicon LOCOS for DRAM cell
US6376324B1 (en) * 2000-06-23 2002-04-23 International Business Machines Corporation Collar process for reduced deep trench edge bias
TW466684B (en) * 2000-09-29 2001-12-01 United Microelectronics Corp Method for forming deep trench capacitor under shallow trench isolation structure
DE10142580B4 (de) * 2001-08-31 2006-07-13 Infineon Technologies Ag Verfahren zur Herstellung einer Grabenstrukturkondensatoreinrichtung
JP2003179148A (ja) * 2001-10-04 2003-06-27 Denso Corp 半導体基板およびその製造方法
US7005338B2 (en) * 2002-09-19 2006-02-28 Promos Technologies Inc. Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate
US20050176198A1 (en) * 2004-02-11 2005-08-11 Kudelka Stephan P. Method of fabricating bottle trench capacitors using an electrochemical etch with electrochemical etch stop
JP2006210512A (ja) * 2005-01-26 2006-08-10 Toshiba Corp 半導体装置、及び、半導体装置の製造方法
US7964514B2 (en) * 2006-03-02 2011-06-21 Applied Materials, Inc. Multiple nitrogen plasma treatments for thin SiON dielectrics
US8106511B2 (en) * 2008-02-28 2012-01-31 Qimonda Ag Reduced-stress through-chip feature and method of making the same
EP2568547B1 (de) 2011-09-06 2014-04-16 Leica Geosystems AG Monitordiodenloser Lasertreiber
US8642423B2 (en) 2011-11-30 2014-02-04 International Business Machines Corporation Polysilicon/metal contact resistance in deep trench
US9960168B2 (en) 2014-12-24 2018-05-01 Globalfoundries Inc. Capacitor strap connection structure and fabrication method
US9818741B2 (en) 2015-06-30 2017-11-14 International Business Machines Corporation Structure and method to prevent EPI short between trenches in FINFET eDRAM

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60152058A (ja) * 1984-01-20 1985-08-10 Toshiba Corp 半導体記憶装置
US4801989A (en) * 1986-02-20 1989-01-31 Fujitsu Limited Dynamic random access memory having trench capacitor with polysilicon lined lower electrode
JPH0797621B2 (ja) 1986-03-03 1995-10-18 富士通株式会社 ダイナミツクランダムアクセスメモリ
US4801988A (en) * 1986-10-31 1989-01-31 International Business Machines Corporation Semiconductor trench capacitor cell with merged isolation and node trench construction
US4918502A (en) * 1986-11-28 1990-04-17 Hitachi, Ltd. Semiconductor memory having trench capacitor formed with sheath electrode
JPS6427252A (en) * 1987-04-13 1989-01-30 Nec Corp Semiconductor storage device
JPS63258060A (ja) * 1987-04-15 1988-10-25 Nec Corp 半導体記憶装置
US4794434A (en) * 1987-07-06 1988-12-27 Motorola, Inc. Trench cell for a dram
JPH01192157A (ja) * 1988-01-27 1989-08-02 Nec Corp 半導体装置
JPH025467A (ja) 1988-06-23 1990-01-10 Texas Instr Japan Ltd 半導体装置
JPH029166A (ja) * 1988-06-28 1990-01-12 Oki Electric Ind Co Ltd 半導体メモリ装置
KR910001985B1 (ko) 1988-09-22 1991-03-30 현대전자산업 주식회사 Sdht 구조로 이루어진 트렌치 캐패시터 셀 및 그 제조방법
US5017506A (en) * 1989-07-25 1991-05-21 Texas Instruments Incorporated Method for fabricating a trench DRAM
JP3208153B2 (ja) 1991-07-03 2001-09-10 株式会社東芝 半導体装置およびその製造方法
JPH0563155A (ja) 1991-08-30 1993-03-12 Texas Instr Japan Ltd 半導体装置及びその製造方法
JP2994110B2 (ja) * 1991-09-09 1999-12-27 株式会社東芝 半導体記憶装置
JPH0637275A (ja) * 1992-07-13 1994-02-10 Toshiba Corp 半導体記憶装置及びその製造方法
US5422294A (en) * 1993-05-03 1995-06-06 Noble, Jr.; Wendell P. Method of making a trench capacitor field shield with sidewall contact
US5406515A (en) * 1993-12-01 1995-04-11 International Business Machines Corporation Method for fabricating low leakage substrate plate trench DRAM cells and devices formed thereby

Also Published As

Publication number Publication date
TW262586B (de) 1995-11-11
KR950010090A (ko) 1995-04-26
KR100226591B1 (ko) 1999-10-15
US6100130A (en) 2000-08-08
DE69429146T2 (de) 2002-07-18
JPH0786432A (ja) 1995-03-31
EP0644591B1 (de) 2001-11-21
JP3480745B2 (ja) 2003-12-22
EP0644591A1 (de) 1995-03-22
US20020072183A1 (en) 2002-06-13
US6534814B2 (en) 2003-03-18

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Legal Events

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