DE69220543T2 - Graben-DRAM-Zelle mit Substratplatte - Google Patents

Graben-DRAM-Zelle mit Substratplatte

Info

Publication number
DE69220543T2
DE69220543T2 DE69220543T DE69220543T DE69220543T2 DE 69220543 T2 DE69220543 T2 DE 69220543T2 DE 69220543 T DE69220543 T DE 69220543T DE 69220543 T DE69220543 T DE 69220543T DE 69220543 T2 DE69220543 T2 DE 69220543T2
Authority
DE
Germany
Prior art keywords
dram cell
substrate plate
trench dram
trench
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69220543T
Other languages
English (en)
Other versions
DE69220543D1 (de
Inventor
Gary B Bronner
San H Dhong
Wei Hwang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69220543D1 publication Critical patent/DE69220543D1/de
Publication of DE69220543T2 publication Critical patent/DE69220543T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
DE69220543T 1991-05-07 1992-04-11 Graben-DRAM-Zelle mit Substratplatte Expired - Fee Related DE69220543T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69669191A 1991-05-07 1991-05-07

Publications (2)

Publication Number Publication Date
DE69220543D1 DE69220543D1 (de) 1997-07-31
DE69220543T2 true DE69220543T2 (de) 1998-01-15

Family

ID=24798159

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69220543T Expired - Fee Related DE69220543T2 (de) 1991-05-07 1992-04-11 Graben-DRAM-Zelle mit Substratplatte

Country Status (4)

Country Link
US (1) US5300800A (de)
EP (1) EP0513532B1 (de)
JP (1) JP2819520B2 (de)
DE (1) DE69220543T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3400143B2 (ja) * 1994-09-17 2003-04-28 株式会社東芝 半導体記憶装置
US6310375B1 (en) 1998-04-06 2001-10-30 Siemens Aktiengesellschaft Trench capacitor with isolation collar and corresponding manufacturing method
JP2006041276A (ja) * 2004-07-28 2006-02-09 Toshiba Corp 半導体装置およびその製造方法
WO2010038581A1 (en) 2008-10-02 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148464A (en) * 1979-05-08 1980-11-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Mos semiconductor device and its manufacture
JPS60152058A (ja) * 1984-01-20 1985-08-10 Toshiba Corp 半導体記憶装置
EP0167764B1 (de) * 1984-06-14 1989-08-16 International Business Machines Corporation Dynamische RAM-Zelle
US4688063A (en) 1984-06-29 1987-08-18 International Business Machines Corporation Dynamic ram cell with MOS trench capacitor in CMOS
JPS61140168A (ja) * 1984-12-12 1986-06-27 Toshiba Corp 半導体記憶装置
JPS62293757A (ja) * 1986-06-13 1987-12-21 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US4801988A (en) * 1986-10-31 1989-01-31 International Business Machines Corporation Semiconductor trench capacitor cell with merged isolation and node trench construction
US4849371A (en) * 1986-12-22 1989-07-18 Motorola Inc. Monocrystalline semiconductor buried layers for electrical contacts to semiconductor devices
EP0283964B1 (de) * 1987-03-20 1994-09-28 Nec Corporation Aus einer Vielzahl von Eintransistorzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff
JPS63258060A (ja) * 1987-04-15 1988-10-25 Nec Corp 半導体記憶装置
JPS63307775A (ja) * 1987-06-09 1988-12-15 Nec Corp キャパシタおよびその製造方法
JPH021967A (ja) * 1988-06-09 1990-01-08 Sharp Corp 半導体メモリ素子

Also Published As

Publication number Publication date
US5300800A (en) 1994-04-05
JPH0629488A (ja) 1994-02-04
EP0513532B1 (de) 1997-06-25
JP2819520B2 (ja) 1998-10-30
DE69220543D1 (de) 1997-07-31
EP0513532A1 (de) 1992-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee