DE69217791D1 - Sonnenzelle - Google Patents
SonnenzelleInfo
- Publication number
- DE69217791D1 DE69217791D1 DE69217791T DE69217791T DE69217791D1 DE 69217791 D1 DE69217791 D1 DE 69217791D1 DE 69217791 T DE69217791 T DE 69217791T DE 69217791 T DE69217791 T DE 69217791T DE 69217791 D1 DE69217791 D1 DE 69217791D1
- Authority
- DE
- Germany
- Prior art keywords
- solar cell
- solar
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3247452A JP2994812B2 (ja) | 1991-09-26 | 1991-09-26 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69217791D1 true DE69217791D1 (de) | 1997-04-10 |
DE69217791T2 DE69217791T2 (de) | 1997-08-28 |
Family
ID=17163659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69217791T Expired - Fee Related DE69217791T2 (de) | 1991-09-26 | 1992-09-25 | Sonnenzelle |
Country Status (5)
Country | Link |
---|---|
US (1) | US5352300A (de) |
EP (1) | EP0534473B1 (de) |
JP (1) | JP2994812B2 (de) |
AU (1) | AU650784B2 (de) |
DE (1) | DE69217791T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5342452A (en) * | 1991-09-25 | 1994-08-30 | Canon Kabushiki Kaisha | Photovoltaic device |
DE4410220B4 (de) * | 1994-03-24 | 2005-02-17 | Forschungszentrum Jülich GmbH | Dünnschicht-Solarzelle |
JP3029178B2 (ja) * | 1994-04-27 | 2000-04-04 | キヤノン株式会社 | 薄膜半導体太陽電池の製造方法 |
CN1096119C (zh) * | 1994-10-06 | 2002-12-11 | 钟渊化学工业株式会社 | 薄膜太阳能电池 |
FR2732696B1 (fr) * | 1995-04-06 | 1997-06-20 | Centre Nat Rech Scient | Procede de preparation d'un film d'oxyde ou d'hydroxyde d'un element des colonnes ii ou iii de la classification, et les structures composites comprenant un tel film |
US5824566A (en) * | 1995-09-26 | 1998-10-20 | Canon Kabushiki Kaisha | Method of producing a photovoltaic device |
WO1997033208A1 (fr) * | 1996-03-08 | 1997-09-12 | Citizen Watch Co., Ltd. | Plaque indicatrice pour montres |
DE69909987T2 (de) * | 1998-03-05 | 2004-05-27 | Asahi Glass Co., Ltd. | Sputtertarget, transparenter leitender film und verfahren zu dessen herstellung |
JP4341124B2 (ja) * | 1999-11-25 | 2009-10-07 | ソニー株式会社 | 半導体装置の製造方法 |
JP4241446B2 (ja) * | 2003-03-26 | 2009-03-18 | キヤノン株式会社 | 積層型光起電力素子 |
WO2007118204A2 (en) * | 2006-04-06 | 2007-10-18 | Applied Materials, Inc. | Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates |
US20070235320A1 (en) | 2006-04-06 | 2007-10-11 | Applied Materials, Inc. | Reactive sputtering chamber with gas distribution tubes |
US7674662B2 (en) * | 2006-07-19 | 2010-03-09 | Applied Materials, Inc. | Process for making thin film field effect transistors using zinc oxide |
US7927713B2 (en) * | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
EP2183780A4 (de) * | 2007-08-02 | 2010-07-28 | Applied Materials Inc | Dünnfilmtransistoren mit dünnfilmhalbleitermaterialien |
EP2077453A1 (de) * | 2008-01-01 | 2009-07-08 | SMA Solar Technology AG | Auswerteverfahren |
US8980066B2 (en) * | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
WO2009117438A2 (en) | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
US7879698B2 (en) * | 2008-03-24 | 2011-02-01 | Applied Materials, Inc. | Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor |
US8822263B2 (en) * | 2008-06-30 | 2014-09-02 | National University Corporation Tokyo University Of Agriculture And Technology | Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device |
US8258511B2 (en) | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
DE102008002954A1 (de) * | 2008-07-18 | 2010-01-21 | Schott Solar Gmbh | Löt-Stützstelle für Solarmodule und Dünnschichtsolarmodule |
CN102640294B (zh) | 2009-09-24 | 2014-12-17 | 应用材料公司 | 将湿式处理用于源极-漏极金属蚀刻从而制造金属氧化物或金属氮氧化物tft的方法 |
US8840763B2 (en) * | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
JP60041878B2 (en) * | 1979-02-14 | 1985-09-19 | Sharp Kk | Thin film solar cell |
JPS55125681A (en) * | 1979-03-22 | 1980-09-27 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
JPS5943101B2 (ja) * | 1979-11-13 | 1984-10-19 | 富士電機株式会社 | 非晶質半導体太陽電池 |
US4336295A (en) * | 1980-12-22 | 1982-06-22 | Eastman Kodak Company | Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device |
IL67926A (en) * | 1982-03-18 | 1986-04-29 | Energy Conversion Devices Inc | Photo-voltaic device with radiation reflector means |
IN165761B (de) * | 1983-07-28 | 1990-01-06 | Energy Conversion Devices Inc | |
US4663495A (en) * | 1985-06-04 | 1987-05-05 | Atlantic Richfield Company | Transparent photovoltaic module |
US4623601A (en) * | 1985-06-04 | 1986-11-18 | Atlantic Richfield Company | Photoconductive device containing zinc oxide transparent conductive layer |
US4940495A (en) * | 1988-12-07 | 1990-07-10 | Minnesota Mining And Manufacturing Company | Photovoltaic device having light transmitting electrically conductive stacked films |
US5078803A (en) * | 1989-09-22 | 1992-01-07 | Siemens Solar Industries L.P. | Solar cells incorporating transparent electrodes comprising hazy zinc oxide |
-
1991
- 1991-09-26 JP JP3247452A patent/JP2994812B2/ja not_active Expired - Lifetime
-
1992
- 1992-09-24 US US07/950,288 patent/US5352300A/en not_active Expired - Lifetime
- 1992-09-25 AU AU25369/92A patent/AU650784B2/en not_active Ceased
- 1992-09-25 EP EP92116485A patent/EP0534473B1/de not_active Expired - Lifetime
- 1992-09-25 DE DE69217791T patent/DE69217791T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69217791T2 (de) | 1997-08-28 |
JP2994812B2 (ja) | 1999-12-27 |
AU650784B2 (en) | 1994-06-30 |
EP0534473A2 (de) | 1993-03-31 |
EP0534473A3 (en) | 1993-10-13 |
JPH0590620A (ja) | 1993-04-09 |
US5352300A (en) | 1994-10-04 |
AU2536992A (en) | 1993-04-01 |
EP0534473B1 (de) | 1997-03-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |