DE69215707D1 - Halbleiter-Speicherzelle - Google Patents

Halbleiter-Speicherzelle

Info

Publication number
DE69215707D1
DE69215707D1 DE69215707T DE69215707T DE69215707D1 DE 69215707 D1 DE69215707 D1 DE 69215707D1 DE 69215707 T DE69215707 T DE 69215707T DE 69215707 T DE69215707 T DE 69215707T DE 69215707 D1 DE69215707 D1 DE 69215707D1
Authority
DE
Germany
Prior art keywords
memory cell
semiconductor memory
semiconductor
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69215707T
Other languages
English (en)
Other versions
DE69215707T2 (de
Inventor
Satoru Takase
Natsuki Kushiyama
Tohru Furuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69215707D1 publication Critical patent/DE69215707D1/de
Application granted granted Critical
Publication of DE69215707T2 publication Critical patent/DE69215707T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE69215707T 1991-02-13 1992-02-12 Halbleiter-Speicherzelle Expired - Fee Related DE69215707T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3041321A JP2660111B2 (ja) 1991-02-13 1991-02-13 半導体メモリセル

Publications (2)

Publication Number Publication Date
DE69215707D1 true DE69215707D1 (de) 1997-01-23
DE69215707T2 DE69215707T2 (de) 1997-05-07

Family

ID=12605257

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69215707T Expired - Fee Related DE69215707T2 (de) 1991-02-13 1992-02-12 Halbleiter-Speicherzelle

Country Status (5)

Country Link
US (1) US5341326A (de)
EP (1) EP0499224B1 (de)
JP (1) JP2660111B2 (de)
KR (1) KR960011200B1 (de)
DE (1) DE69215707T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122989B2 (ja) * 1990-06-27 1995-12-25 株式会社東芝 半導体記憶装置
JP2564046B2 (ja) * 1991-02-13 1996-12-18 株式会社東芝 半導体記憶装置
US5625602A (en) * 1991-11-18 1997-04-29 Kabushiki Kaisha Toshiba NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines
JP3464803B2 (ja) * 1991-11-27 2003-11-10 株式会社東芝 半導体メモリセル
JP3237971B2 (ja) * 1993-09-02 2001-12-10 株式会社東芝 半導体記憶装置
JP3272888B2 (ja) * 1993-12-28 2002-04-08 株式会社東芝 半導体記憶装置
US5452244A (en) * 1994-08-10 1995-09-19 Cirrus Logic, Inc. Electronic memory and methods for making and using the same
JP2783271B2 (ja) * 1995-01-30 1998-08-06 日本電気株式会社 半導体記憶装置
DE19518348C1 (de) * 1995-05-18 1996-08-22 Siemens Ag Speicher mit dynamischen Speicherzellen
US6831317B2 (en) * 1995-11-09 2004-12-14 Hitachi, Ltd. System with meshed power and signal buses on cell array
JP3869045B2 (ja) * 1995-11-09 2007-01-17 株式会社日立製作所 半導体記憶装置
US6512257B2 (en) * 1995-11-09 2003-01-28 Hitachi, Inc. System with meshed power and signal buses on cell array
US5936874A (en) 1997-06-19 1999-08-10 Micron Technology, Inc. High density semiconductor memory and method of making
US6423596B1 (en) 1998-09-29 2002-07-23 Texas Instruments Incorporated Method for two-sided fabrication of a memory array
US6330181B1 (en) * 1998-09-29 2001-12-11 Texas Instruments Incorporated Method of forming a gate device with raised channel
US6300179B1 (en) 1999-09-24 2001-10-09 Texas Instruments Incorporated Gate device with access channel formed in discrete post and method
US6380576B1 (en) 2000-08-31 2002-04-30 Micron Technology, Inc. Selective polysilicon stud growth
US7023776B2 (en) * 2001-01-25 2006-04-04 Dphi Acquisitions, Inc. Calibration initiation methods for a tracking and focus servo system
US20070051940A1 (en) * 2003-01-29 2007-03-08 Wolfgang Clemens Device and method for determining the physical condition of an animal
US7332389B2 (en) * 2003-07-02 2008-02-19 Micron Technology, Inc. Selective polysilicon stud growth
US20060278912A1 (en) * 2004-09-02 2006-12-14 Luan Tran Selective polysilicon stud growth
US7782697B2 (en) * 2007-04-24 2010-08-24 Novelics, Llc. DRAM with hybrid sense amplifier
TWI415247B (zh) * 2010-12-15 2013-11-11 Powerchip Technology Corp 具有垂直通道電晶體的動態隨機存取記憶胞及陣列
TWI596769B (zh) * 2011-01-13 2017-08-21 半導體能源研究所股份有限公司 半導體裝置及半導體儲存裝置
TWI525615B (zh) * 2011-04-29 2016-03-11 半導體能源研究所股份有限公司 半導體儲存裝置
JP6298657B2 (ja) * 2013-03-07 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
US9343506B2 (en) 2014-06-04 2016-05-17 Micron Technology, Inc. Memory arrays with polygonal memory cells having specific sidewall orientations
JP6956525B2 (ja) * 2017-06-08 2021-11-02 株式会社半導体エネルギー研究所 半導体装置、記憶装置、及び電子機器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6807435A (de) * 1968-05-25 1969-11-27
US4225945A (en) * 1976-01-12 1980-09-30 Texas Instruments Incorporated Random access MOS memory cell using double level polysilicon
JPS5848294A (ja) * 1981-09-16 1983-03-22 Mitsubishi Electric Corp Ｍｏｓダイナミツクメモリ
US4669063A (en) * 1982-12-30 1987-05-26 Thomson Components-Mostek Corp. Sense amplifier for a dynamic RAM
JPS60209996A (ja) * 1984-03-31 1985-10-22 Toshiba Corp 半導体記憶装置
JPH0793009B2 (ja) * 1984-12-13 1995-10-09 株式会社東芝 半導体記憶装置
US4648073A (en) * 1984-12-31 1987-03-03 International Business Machines Corporation Sequential shared access lines memory cells
US4980863A (en) * 1987-03-31 1990-12-25 Kabushiki Kaisha Toshiba Semiconductor memory device having switching circuit for coupling together two pairs of bit lines
US4943944A (en) * 1987-11-25 1990-07-24 Kabushiki Kaisha Toshiba Semiconductor memory using dynamic ram cells
JPH01204298A (ja) * 1988-02-08 1989-08-16 Fujitsu Ltd 半導体記憶回路
US4911718A (en) * 1988-06-10 1990-03-27 University Of Medicine & Dentistry Of N.J. Functional and biocompatible intervertebral disc spacer
JP2682021B2 (ja) * 1988-06-29 1997-11-26 富士通株式会社 半導体メモリ装置
US5091761A (en) * 1988-08-22 1992-02-25 Hitachi, Ltd. Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover
JP2633645B2 (ja) * 1988-09-13 1997-07-23 株式会社東芝 半導体メモリ装置
CA1318469C (en) * 1989-02-15 1993-06-01 Acromed Corporation Artificial disc
US5172198A (en) * 1989-02-22 1992-12-15 Kabushiki Kaisha Toshiba MOS type semiconductor device
EP0387379B1 (de) * 1989-03-16 1995-01-18 Siemens Aktiengesellschaft Integrierter Halbleiterspeicher vom Typ DRAM und Verfahren zu seinem Testen
JPH02301097A (ja) * 1989-05-15 1990-12-13 Toshiba Corp ダイナミック型ランダムアクセスメモリ
DE4015472C2 (de) * 1989-05-16 1993-12-02 Mitsubishi Electric Corp Speicherzelle und Verfahren zum Herstellen eines dynamischen RAM

Also Published As

Publication number Publication date
EP0499224B1 (de) 1996-12-11
JPH04258881A (ja) 1992-09-14
US5341326A (en) 1994-08-23
JP2660111B2 (ja) 1997-10-08
DE69215707T2 (de) 1997-05-07
EP0499224A1 (de) 1992-08-19
KR920017109A (ko) 1992-09-26
KR960011200B1 (ko) 1996-08-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee