DE69213973D1 - SRAM-Zelle mit geschichteter Kapazität - Google Patents

SRAM-Zelle mit geschichteter Kapazität

Info

Publication number
DE69213973D1
DE69213973D1 DE69213973T DE69213973T DE69213973D1 DE 69213973 D1 DE69213973 D1 DE 69213973D1 DE 69213973 T DE69213973 T DE 69213973T DE 69213973 T DE69213973 T DE 69213973T DE 69213973 D1 DE69213973 D1 DE 69213973D1
Authority
DE
Germany
Prior art keywords
sram cell
layered
layered capacitance
capacitance sram
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69213973T
Other languages
English (en)
Other versions
DE69213973T2 (de
Inventor
Mark S Rodder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69213973D1 publication Critical patent/DE69213973D1/de
Publication of DE69213973T2 publication Critical patent/DE69213973T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G11C11/4125—Cells incorporating circuit means for protecting against loss of information
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69213973T 1991-01-30 1992-01-24 SRAM-Zelle mit geschichteter Kapazität Expired - Fee Related DE69213973T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64787991A 1991-01-30 1991-01-30

Publications (2)

Publication Number Publication Date
DE69213973D1 true DE69213973D1 (de) 1996-10-31
DE69213973T2 DE69213973T2 (de) 1997-02-13

Family

ID=24598629

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69213973T Expired - Fee Related DE69213973T2 (de) 1991-01-30 1992-01-24 SRAM-Zelle mit geschichteter Kapazität

Country Status (4)

Country Link
EP (1) EP0499824B1 (de)
JP (1) JP3150184B2 (de)
KR (1) KR100232370B1 (de)
DE (1) DE69213973T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3535615B2 (ja) 1995-07-18 2004-06-07 株式会社ルネサステクノロジ 半導体集積回路装置
US6642574B2 (en) 1997-10-07 2003-11-04 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
JP3554666B2 (ja) * 1997-10-07 2004-08-18 株式会社日立製作所 半導体メモリ装置
US6169308B1 (en) 1996-11-15 2001-01-02 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
JPH10229135A (ja) 1997-02-14 1998-08-25 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4753534B2 (ja) 2003-12-26 2011-08-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4783022B2 (ja) 2005-01-17 2011-09-28 株式会社東芝 半導体集積回路装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679171A (en) * 1985-02-07 1987-07-07 Visic, Inc. MOS/CMOS memory cell
US4984200A (en) * 1987-11-30 1991-01-08 Hitachi, Ltd. Semiconductor circuit device having a plurality of SRAM type memory cell arrangement
JPH01152662A (ja) * 1987-12-09 1989-06-15 Fujitsu Ltd 半導体記憶装置
JP2590171B2 (ja) * 1988-01-08 1997-03-12 株式会社日立製作所 半導体記憶装置

Also Published As

Publication number Publication date
JP3150184B2 (ja) 2001-03-26
EP0499824A1 (de) 1992-08-26
KR100232370B1 (ko) 1999-12-01
DE69213973T2 (de) 1997-02-13
EP0499824B1 (de) 1996-09-25
JPH06151771A (ja) 1994-05-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee