JPH0724282B2 - ダイナミックｒａｍの積層溝型キャパシタの製造方法 - Google Patents

ダイナミックｒａｍの積層溝型キャパシタの製造方法

Info

Publication number
JPH0724282B2
JPH0724282B2 JP2110678A JP11067890A JPH0724282B2 JP H0724282 B2 JPH0724282 B2 JP H0724282B2 JP 2110678 A JP2110678 A JP 2110678A JP 11067890 A JP11067890 A JP 11067890A JP H0724282 B2 JPH0724282 B2 JP H0724282B2
Authority
JP
Japan
Prior art keywords
silicon layer
groove
transistor
capacitor
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2110678A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0385757A (ja
Inventor
ヨウン、ジョン、リー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
COLD STAR ELECTRON COMPANY LIMITED
Original Assignee
COLD STAR ELECTRON COMPANY LIMITED
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by COLD STAR ELECTRON COMPANY LIMITED filed Critical COLD STAR ELECTRON COMPANY LIMITED
Publication of JPH0385757A publication Critical patent/JPH0385757A/ja
Publication of JPH0724282B2 publication Critical patent/JPH0724282B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2110678A 1989-08-23 1990-04-27 ダイナミックｒａｍの積層溝型キャパシタの製造方法 Expired - Fee Related JPH0724282B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR12019 1989-08-23
KR1019890012019A KR930006973B1 (ko) 1989-08-23 1989-08-23 디램의 스택 트렌치 커패시터 제조방법

Publications (2)

Publication Number Publication Date
JPH0385757A JPH0385757A (ja) 1991-04-10
JPH0724282B2 true JPH0724282B2 (ja) 1995-03-15

Family

ID=19289171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2110678A Expired - Fee Related JPH0724282B2 (ja) 1989-08-23 1990-04-27 ダイナミックｒａｍの積層溝型キャパシタの製造方法

Country Status (6)

Country Link
JP (1) JPH0724282B2 (ko)
KR (1) KR930006973B1 (ko)
DE (1) DE4010720C2 (ko)
FR (1) FR2651368B1 (ko)
GB (1) GB2235335B (ko)
NL (1) NL193765C (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10964832B2 (en) 2016-10-11 2021-03-30 Power Roll Limited Capacitors in grooves

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000058506A (ko) * 2000-06-07 2000-10-05 이순환 열기관 압축링에 삽입하여 열효율을 높이는 황동핀

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPH01101664A (ja) * 1987-10-15 1989-04-19 Nec Corp 半導体集積回路装置
JPH01179450A (ja) * 1988-01-08 1989-07-17 Oki Electric Ind Co Ltd Ｍｏｓ型ダイナミックメモリ集積回路とその製造方法
KR900019227A (ko) * 1988-05-18 1990-12-24 아오이 죠이치 적층형 캐피시터를 갖춘 반도체기억장치 및 그 제조방법
JPH02177359A (ja) * 1988-12-27 1990-07-10 Nec Corp 半導体記憶装置
JP4093614B2 (ja) * 1997-06-11 2008-06-04 旭化成ケミカルズ株式会社 固着剤組成物
JPH1179450A (ja) * 1997-09-12 1999-03-23 Mita Ind Co Ltd 自動原稿搬送装置の原稿分離機構

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10964832B2 (en) 2016-10-11 2021-03-30 Power Roll Limited Capacitors in grooves
US10978603B2 (en) 2016-10-11 2021-04-13 Power Roll Limited Energy storage

Also Published As

Publication number Publication date
DE4010720A1 (de) 1991-02-28
DE4010720C2 (de) 1994-05-05
GB9017025D0 (en) 1990-09-19
NL193765C (nl) 2000-09-04
NL9001849A (nl) 1991-03-18
GB2235335A (en) 1991-02-27
FR2651368A1 (fr) 1991-03-01
JPH0385757A (ja) 1991-04-10
FR2651368B1 (fr) 1991-11-29
GB2235335B (en) 1994-03-02
KR910005297A (ko) 1991-03-30
KR930006973B1 (ko) 1993-07-24
NL193765B (nl) 2000-05-01

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