FR2651368B1 - Procede de fabrication de condensateurs a tranchee en pile pour memoire vive dynamique. - Google Patents
Procede de fabrication de condensateurs a tranchee en pile pour memoire vive dynamique.Info
- Publication number
- FR2651368B1 FR2651368B1 FR909006733A FR9006733A FR2651368B1 FR 2651368 B1 FR2651368 B1 FR 2651368B1 FR 909006733 A FR909006733 A FR 909006733A FR 9006733 A FR9006733 A FR 9006733A FR 2651368 B1 FR2651368 B1 FR 2651368B1
- Authority
- FR
- France
- Prior art keywords
- vive
- dynamic
- memory
- trench capacitors
- manufacturing stacked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890012019A KR930006973B1 (ko) | 1989-08-23 | 1989-08-23 | 디램의 스택 트렌치 커패시터 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2651368A1 FR2651368A1 (fr) | 1991-03-01 |
| FR2651368B1 true FR2651368B1 (fr) | 1991-11-29 |
Family
ID=19289171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR909006733A Expired - Lifetime FR2651368B1 (fr) | 1989-08-23 | 1990-05-30 | Procede de fabrication de condensateurs a tranchee en pile pour memoire vive dynamique. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH0724282B2 (ko) |
| KR (1) | KR930006973B1 (ko) |
| DE (1) | DE4010720C2 (ko) |
| FR (1) | FR2651368B1 (ko) |
| GB (1) | GB2235335B (ko) |
| NL (1) | NL193765C (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000058506A (ko) * | 2000-06-07 | 2000-10-05 | 이순환 | 열기관 압축링에 삽입하여 열효율을 높이는 황동핀 |
| GB201617276D0 (en) | 2016-10-11 | 2016-11-23 | Big Solar Limited | Energy storage |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62120070A (ja) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | 半導体記憶装置 |
| JPH01101664A (ja) * | 1987-10-15 | 1989-04-19 | Nec Corp | 半導体集積回路装置 |
| JPH01179450A (ja) * | 1988-01-08 | 1989-07-17 | Oki Electric Ind Co Ltd | Ｍｏｓ型ダイナミックメモリ集積回路とその製造方法 |
| KR900019227A (ko) * | 1988-05-18 | 1990-12-24 | 아오이 죠이치 | 적층형 캐피시터를 갖춘 반도체기억장치 및 그 제조방법 |
| JPH02177359A (ja) * | 1988-12-27 | 1990-07-10 | Nec Corp | 半導体記憶装置 |
| JP4093614B2 (ja) * | 1997-06-11 | 2008-06-04 | 旭化成ケミカルズ株式会社 | 固着剤組成物 |
| JPH1179450A (ja) * | 1997-09-12 | 1999-03-23 | Mita Ind Co Ltd | 自動原稿搬送装置の原稿分離機構 |
-
1989
- 1989-08-23 KR KR1019890012019A patent/KR930006973B1/ko not_active IP Right Cessation
-
1990
- 1990-04-03 DE DE4010720A patent/DE4010720C2/de not_active Expired - Fee Related
- 1990-04-27 JP JP2110678A patent/JPH0724282B2/ja not_active Expired - Fee Related
- 1990-05-30 FR FR909006733A patent/FR2651368B1/fr not_active Expired - Lifetime
- 1990-08-03 GB GB9017025A patent/GB2235335B/en not_active Expired - Fee Related
- 1990-08-21 NL NL9001849A patent/NL193765C/nl not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0385757A (ja) | 1991-04-10 |
| NL9001849A (nl) | 1991-03-18 |
| DE4010720A1 (de) | 1991-02-28 |
| JPH0724282B2 (ja) | 1995-03-15 |
| NL193765B (nl) | 2000-05-01 |
| GB2235335B (en) | 1994-03-02 |
| KR910005297A (ko) | 1991-03-30 |
| DE4010720C2 (de) | 1994-05-05 |
| NL193765C (nl) | 2000-09-04 |
| FR2651368A1 (fr) | 1991-03-01 |
| GB2235335A (en) | 1991-02-27 |
| GB9017025D0 (en) | 1990-09-19 |
| KR930006973B1 (ko) | 1993-07-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20080131 |