GB2235335B - Process for fabricating trench capacitors - Google Patents

Process for fabricating trench capacitors

Info

Publication number
GB2235335B
GB2235335B GB9017025A GB9017025A GB2235335B GB 2235335 B GB2235335 B GB 2235335B GB 9017025 A GB9017025 A GB 9017025A GB 9017025 A GB9017025 A GB 9017025A GB 2235335 B GB2235335 B GB 2235335B
Authority
GB
United Kingdom
Prior art keywords
trench capacitors
fabricating trench
fabricating
capacitors
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9017025A
Other languages
English (en)
Other versions
GB9017025D0 (en
GB2235335A (en
Inventor
Young Jong Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Goldstar Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Electron Co Ltd filed Critical Goldstar Electron Co Ltd
Publication of GB9017025D0 publication Critical patent/GB9017025D0/en
Publication of GB2235335A publication Critical patent/GB2235335A/en
Application granted granted Critical
Publication of GB2235335B publication Critical patent/GB2235335B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9017025A 1989-08-23 1990-08-03 Process for fabricating trench capacitors Expired - Fee Related GB2235335B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890012019A KR930006973B1 (ko) 1989-08-23 1989-08-23 디램의 스택 트렌치 커패시터 제조방법

Publications (3)

Publication Number Publication Date
GB9017025D0 GB9017025D0 (en) 1990-09-19
GB2235335A GB2235335A (en) 1991-02-27
GB2235335B true GB2235335B (en) 1994-03-02

Family

ID=19289171

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9017025A Expired - Fee Related GB2235335B (en) 1989-08-23 1990-08-03 Process for fabricating trench capacitors

Country Status (6)

Country Link
JP (1) JPH0724282B2 (ko)
KR (1) KR930006973B1 (ko)
DE (1) DE4010720C2 (ko)
FR (1) FR2651368B1 (ko)
GB (1) GB2235335B (ko)
NL (1) NL193765C (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000058506A (ko) * 2000-06-07 2000-10-05 이순환 열기관 압축링에 삽입하여 열효율을 높이는 황동핀
GB201617276D0 (en) 2016-10-11 2016-11-23 Big Solar Limited Energy storage

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPH01101664A (ja) * 1987-10-15 1989-04-19 Nec Corp 半導体集積回路装置
JPH01179450A (ja) * 1988-01-08 1989-07-17 Oki Electric Ind Co Ltd Ｍｏｓ型ダイナミックメモリ集積回路とその製造方法
KR900019227A (ko) * 1988-05-18 1990-12-24 아오이 죠이치 적층형 캐피시터를 갖춘 반도체기억장치 및 그 제조방법
JPH02177359A (ja) * 1988-12-27 1990-07-10 Nec Corp 半導体記憶装置
JP4093614B2 (ja) * 1997-06-11 2008-06-04 旭化成ケミカルズ株式会社 固着剤組成物
JPH1179450A (ja) * 1997-09-12 1999-03-23 Mita Ind Co Ltd 自動原稿搬送装置の原稿分離機構

Also Published As

Publication number Publication date
DE4010720C2 (de) 1994-05-05
NL9001849A (nl) 1991-03-18
FR2651368A1 (fr) 1991-03-01
FR2651368B1 (fr) 1991-11-29
JPH0385757A (ja) 1991-04-10
NL193765C (nl) 2000-09-04
KR930006973B1 (ko) 1993-07-24
NL193765B (nl) 2000-05-01
GB9017025D0 (en) 1990-09-19
KR910005297A (ko) 1991-03-30
GB2235335A (en) 1991-02-27
JPH0724282B2 (ja) 1995-03-15
DE4010720A1 (de) 1991-02-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060803