GB2214349B - Process for fabricating mos devices - Google Patents

Process for fabricating mos devices

Info

Publication number
GB2214349B
GB2214349B GB8900029A GB8900029A GB2214349B GB 2214349 B GB2214349 B GB 2214349B GB 8900029 A GB8900029 A GB 8900029A GB 8900029 A GB8900029 A GB 8900029A GB 2214349 B GB2214349 B GB 2214349B
Authority
GB
United Kingdom
Prior art keywords
mos devices
fabricating mos
fabricating
devices
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8900029A
Other versions
GB2214349A (en
GB8900029D0 (en
Inventor
Di Ma
David H Hoffman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Standard Microsystems LLC
Original Assignee
Standard Microsystems LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Microsystems LLC filed Critical Standard Microsystems LLC
Publication of GB8900029D0 publication Critical patent/GB8900029D0/en
Publication of GB2214349A publication Critical patent/GB2214349A/en
Application granted granted Critical
Publication of GB2214349B publication Critical patent/GB2214349B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H01L29/66598—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET forming drain [D] and lightly doped drain [LDD] simultaneously, e.g. using implantation through the wings a T-shaped layer, or through a specially shaped layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
GB8900029A 1988-01-19 1989-01-03 Process for fabricating mos devices Expired - Lifetime GB2214349B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14539088A 1988-01-19 1988-01-19

Publications (3)

Publication Number Publication Date
GB8900029D0 GB8900029D0 (en) 1989-03-01
GB2214349A GB2214349A (en) 1989-08-31
GB2214349B true GB2214349B (en) 1991-06-26

Family

ID=22512891

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8900029A Expired - Lifetime GB2214349B (en) 1988-01-19 1989-01-03 Process for fabricating mos devices

Country Status (3)

Country Link
JP (1) JP2733082B2 (en)
CA (1) CA1294061C (en)
GB (1) GB2214349B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5102816A (en) * 1990-03-27 1992-04-07 Sematech, Inc. Staircase sidewall spacer for improved source/drain architecture
EP0521947A1 (en) * 1990-03-27 1993-01-13 Sematech, Inc. Staircase sidewall spacer for improved source/drain architecture
US5202272A (en) * 1991-03-25 1993-04-13 International Business Machines Corporation Field effect transistor formed with deep-submicron gate
US6153484A (en) * 1995-06-19 2000-11-28 Imec Vzw Etching process of CoSi2 layers
US6404343B1 (en) 1999-06-25 2002-06-11 Act Lsi Inc. Water leakage monitoring apparatus
US6762085B2 (en) * 2002-10-01 2004-07-13 Chartered Semiconductor Manufacturing Ltd. Method of forming a high performance and low cost CMOS device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0066280A2 (en) * 1981-06-02 1982-12-08 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device
EP0088922A2 (en) * 1982-03-16 1983-09-21 Kabushiki Kaisha Toshiba A method of forming electrodes and wiring strips on a semiconductor device
EP0111706A1 (en) * 1982-12-07 1984-06-27 International Business Machines Corporation Sidewall isolation for gate of field effect transistor and process for the formation thereof
US4727038A (en) * 1984-08-22 1988-02-23 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device
EP0268298A2 (en) * 1986-11-20 1988-05-25 Sumitomo Electric Industries Limited Method of producing a Schottky-barrier field effect transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269560A (en) * 1985-09-24 1987-03-30 Hitachi Ltd Manufacture of semiconductor device
JPS62118578A (en) * 1985-11-18 1987-05-29 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS62229976A (en) * 1986-03-31 1987-10-08 Toshiba Corp Semiconductor device and manufacture thereof
JPS62274665A (en) * 1986-05-22 1987-11-28 Nec Corp Manufacture of semiconductor device
US4728617A (en) * 1986-11-04 1988-03-01 Intel Corporation Method of fabricating a MOSFET with graded source and drain regions

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0066280A2 (en) * 1981-06-02 1982-12-08 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device
EP0088922A2 (en) * 1982-03-16 1983-09-21 Kabushiki Kaisha Toshiba A method of forming electrodes and wiring strips on a semiconductor device
EP0111706A1 (en) * 1982-12-07 1984-06-27 International Business Machines Corporation Sidewall isolation for gate of field effect transistor and process for the formation thereof
US4727038A (en) * 1984-08-22 1988-02-23 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device
EP0268298A2 (en) * 1986-11-20 1988-05-25 Sumitomo Electric Industries Limited Method of producing a Schottky-barrier field effect transistor

Also Published As

Publication number Publication date
JPH023935A (en) 1990-01-09
JP2733082B2 (en) 1998-03-30
CA1294061C (en) 1992-01-07
GB2214349A (en) 1989-08-31
GB8900029D0 (en) 1989-03-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050103