DE19832565C2 - Mit einem Verstärker und einer Impedanzanpassungsspule ausgestattete Duplexerschaltung - Google Patents

Mit einem Verstärker und einer Impedanzanpassungsspule ausgestattete Duplexerschaltung

Info

Publication number
DE19832565C2
DE19832565C2 DE19832565A DE19832565A DE19832565C2 DE 19832565 C2 DE19832565 C2 DE 19832565C2 DE 19832565 A DE19832565 A DE 19832565A DE 19832565 A DE19832565 A DE 19832565A DE 19832565 C2 DE19832565 C2 DE 19832565C2
Authority
DE
Germany
Prior art keywords
circuit
fet
switched
preferred
during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19832565A
Other languages
German (de)
English (en)
Other versions
DE19832565A1 (de
Inventor
Kazuya Yamamoto
Takao Moriwaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE19832565A1 publication Critical patent/DE19832565A1/de
Application granted granted Critical
Publication of DE19832565C2 publication Critical patent/DE19832565C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/42—Amplifiers with two or more amplifying elements having their DC paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers
    • H03F3/423—Amplifiers with two or more amplifying elements having their DC paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/72—Indexing scheme relating to amplifiers the amplifier stage being a common gate configuration MOSFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Electronic Switches (AREA)
  • Transceivers (AREA)
DE19832565A 1998-01-16 1998-07-20 Mit einem Verstärker und einer Impedanzanpassungsspule ausgestattete Duplexerschaltung Expired - Fee Related DE19832565C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00646898A JP3711193B2 (ja) 1998-01-16 1998-01-16 送受信切り換え回路

Publications (2)

Publication Number Publication Date
DE19832565A1 DE19832565A1 (de) 1999-08-05
DE19832565C2 true DE19832565C2 (de) 2002-03-07

Family

ID=11639297

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19832565A Expired - Fee Related DE19832565C2 (de) 1998-01-16 1998-07-20 Mit einem Verstärker und einer Impedanzanpassungsspule ausgestattete Duplexerschaltung

Country Status (3)

Country Link
US (1) US6066993A (https=)
JP (1) JP3711193B2 (https=)
DE (1) DE19832565C2 (https=)

Cited By (12)

* Cited by examiner, † Cited by third party
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US8405147B2 (en) 2005-07-11 2013-03-26 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
US8536636B2 (en) 2007-04-26 2013-09-17 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US8559907B2 (en) 2004-06-23 2013-10-15 Peregrine Semiconductor Corporation Integrated RF front end with stacked transistor switch
US8583111B2 (en) 2001-10-10 2013-11-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US8604864B2 (en) 2008-02-28 2013-12-10 Peregrine Semiconductor Corporation Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US8954902B2 (en) 2005-07-11 2015-02-10 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US9397656B2 (en) 2005-07-11 2016-07-19 Peregrine Semiconductor Corporation Circuit and method for controlling charge injection in radio frequency switches
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9419565B2 (en) 2013-03-14 2016-08-16 Peregrine Semiconductor Corporation Hot carrier injection compensation
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998013932A1 (en) * 1996-09-26 1998-04-02 Matsushita Electric Industrial Co., Ltd. Branch filter and shared device and 2-frequency band mobile communication apparatus using the branch filter
US20030112370A1 (en) * 2001-12-18 2003-06-19 Chris Long Adaptive expanded information capacity for communications systems
US6433835B1 (en) 1998-04-17 2002-08-13 Encamera Sciences Corporation Expanded information capacity for existing communication transmission systems
US20030140351A1 (en) * 1998-04-17 2003-07-24 Hoarty W. Leo Cable television system compatible bandwidth upgrade using embedded digital channels
WO2000055967A1 (en) 1999-03-15 2000-09-21 Matsushita Electric Industrial Co., Ltd. Semiconductor device and communication device
JP2001177433A (ja) * 1999-12-21 2001-06-29 Murata Mfg Co Ltd 高周波複合部品及び移動体通信装置
US7020450B2 (en) * 2000-09-05 2006-03-28 Nec Corporation Active inductors using bipolar silicon transistors
US6496074B1 (en) * 2000-09-28 2002-12-17 Koninklijke Philips Electronics N.V. Cascode bootstrapped analog power amplifier circuit
KR100384399B1 (ko) * 2000-11-28 2003-05-22 주식회사 케이이씨 듀플렉서의 주파수 격리회로
FR2818054B1 (fr) * 2000-12-08 2006-08-11 St Microelectronics Sa Tete d'emission-reception
US20020177417A1 (en) * 2001-05-25 2002-11-28 Koninklijke Philips Electronics N.V. Transmit/receive switch for an RF transceiver
US7027790B2 (en) * 2001-08-10 2006-04-11 Broadcom Corporation Transceiver front-end
JP2003078441A (ja) * 2001-09-03 2003-03-14 Matsushita Electric Ind Co Ltd 高周波回路装置および移動体通信装置
US7796969B2 (en) * 2001-10-10 2010-09-14 Peregrine Semiconductor Corporation Symmetrically and asymmetrically stacked transistor group RF switch
US7613442B1 (en) 2001-10-10 2009-11-03 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US6606001B1 (en) 2001-10-25 2003-08-12 National Semiconductor Corporation High-speed current-mirror circuitry and method of operating the same
US7180942B2 (en) 2001-12-18 2007-02-20 Dotcast, Inc. Joint adaptive optimization of soft decision device and feedback equalizer
US20030219085A1 (en) * 2001-12-18 2003-11-27 Endres Thomas J. Self-initializing decision feedback equalizer with automatic gain control
US6611218B1 (en) 2002-01-09 2003-08-26 Xilinx, Inc. Transmitter with multiphase data combiner for parallel to serial data conversion
US6933782B1 (en) 2002-01-09 2005-08-23 Xilinx, Inc. Degenerative inductor-based gain equalization
US6917336B2 (en) * 2002-01-23 2005-07-12 Dotcast, Inc. Miniature ultra-wideband active receiving antenna
CN100365932C (zh) * 2002-12-17 2008-01-30 M/A-Com公司 用于多频带开关的装置、方法和制造产品
US6940363B2 (en) * 2002-12-17 2005-09-06 Intel Corporation Switch architecture using MEMS switches and solid state switches in parallel
US7515882B2 (en) * 2002-12-17 2009-04-07 Kelcourse Mark F Apparatus, methods and articles of manufacture for a multi-band switch
US7869770B2 (en) * 2002-12-17 2011-01-11 M/A-Com Technology Solutions Holdings, Inc. Apparatus, methods and articles of manufacture for a multi-band switch
JP2004207437A (ja) * 2002-12-25 2004-07-22 Nec Corp 接地スイッチ回路
US6774701B1 (en) * 2003-02-19 2004-08-10 Raytheon Company Method and apparatus for electronic switching with low insertion loss and high isolation
WO2004075469A2 (en) * 2003-02-19 2004-09-02 Dotcast Inc. Joint, adaptive control of equalization, synchronization, and gain in a digital communications receiver
JP4137814B2 (ja) * 2004-02-19 2008-08-20 ソニー・エリクソン・モバイルコミュニケーションズ株式会社 スイッチ装置、スイッチ付電力増幅装置及び携帯通信端末装置
JP2005311447A (ja) * 2004-04-16 2005-11-04 Toshiba Corp スイッチ回路
US7619462B2 (en) * 2005-02-09 2009-11-17 Peregrine Semiconductor Corporation Unpowered switch and bleeder circuit
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
JP4760832B2 (ja) * 2005-08-09 2011-08-31 日立金属株式会社 高周波スイッチ回路
JP4877572B2 (ja) * 2005-10-25 2012-02-15 横河電機株式会社 サンプラー
JP4939125B2 (ja) 2006-06-29 2012-05-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置および高周波モジュール
JP2008118624A (ja) * 2006-10-13 2008-05-22 Matsushita Electric Ind Co Ltd 高周波電力増幅装置
JP2009159059A (ja) * 2007-12-25 2009-07-16 Samsung Electro Mech Co Ltd 高周波スイッチ回路
DE102008000473B4 (de) * 2008-02-29 2016-04-28 Maxim Integrated Gmbh Front-End für RF-Sende-Empfangsanlagen mit implizierter Richtungs-Steuerung und Zeitmultiplex-Verfahren in Submikron-Technologie
FR2935568B1 (fr) * 2008-08-29 2010-09-03 Thales Sa Duplexeur actif hyperfrequence commande
US7936237B2 (en) * 2008-11-04 2011-05-03 Redpine Signals, Inc. Multi-band transmit-receive switch for wireless transceiver
JP5237842B2 (ja) * 2009-01-29 2013-07-17 ルネサスエレクトロニクス株式会社 半導体装置
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US8451044B2 (en) * 2009-06-29 2013-05-28 Sige Semiconductor, Inc. Switching circuit
JP5267407B2 (ja) * 2009-10-02 2013-08-21 富士通株式会社 増幅回路及び通信装置
JP2011193191A (ja) * 2010-03-15 2011-09-29 Renesas Electronics Corp 半導体集積回路およびそれを内蔵した高周波モジュール
US8626084B2 (en) 2010-05-13 2014-01-07 Qualcomm, Incorporated Area efficient concurrent matching transceiver
JP5772581B2 (ja) 2011-12-28 2015-09-02 三菱電機株式会社 スイッチ回路
US8829967B2 (en) 2012-06-27 2014-09-09 Triquint Semiconductor, Inc. Body-contacted partially depleted silicon on insulator transistor
US8729952B2 (en) 2012-08-16 2014-05-20 Triquint Semiconductor, Inc. Switching device with non-negative biasing
JP5743983B2 (ja) * 2012-08-31 2015-07-01 株式会社東芝 送受切替回路、無線装置および送受切替方法
US8847672B2 (en) 2013-01-15 2014-09-30 Triquint Semiconductor, Inc. Switching device with resistive divider
US9214932B2 (en) 2013-02-11 2015-12-15 Triquint Semiconductor, Inc. Body-biased switching device
US8977217B1 (en) 2013-02-20 2015-03-10 Triquint Semiconductor, Inc. Switching device with negative bias circuit
US8923782B1 (en) 2013-02-20 2014-12-30 Triquint Semiconductor, Inc. Switching device with diode-biased field-effect transistor (FET)
US9203396B1 (en) 2013-02-22 2015-12-01 Triquint Semiconductor, Inc. Radio frequency switch device with source-follower
EP2784816A1 (en) 2013-03-28 2014-10-01 Nxp B.V. Cascode semiconductor device
JP6410007B2 (ja) * 2013-12-16 2018-10-24 株式会社村田製作所 カスコード増幅器
US9379698B2 (en) 2014-02-04 2016-06-28 Triquint Semiconductor, Inc. Field effect transistor switching circuit
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
DE112016002477T5 (de) 2015-06-03 2018-02-15 Sony Corporation Signalverarbeitungsvorrichtung
US9705482B1 (en) 2016-06-24 2017-07-11 Peregrine Semiconductor Corporation High voltage input buffer
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
JP2018050127A (ja) * 2016-09-20 2018-03-29 株式会社東芝 半導体スイッチ
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10771028B2 (en) * 2018-05-29 2020-09-08 Futurewei Technologies, Inc. Programmable gain amplifier apparatus and method
JP2020107967A (ja) * 2018-12-26 2020-07-09 株式会社村田製作所 電力増幅回路及び電力増幅モジュール
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch
JP7784387B2 (ja) * 2020-12-23 2025-12-11 ソニーセミコンダクタソリューションズ株式会社 送受信切替回路、および、無線通信端末

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2426506A1 (de) * 1974-05-31 1975-12-04 Standard Elektrik Lorenz Ag Funk- sende/empfangsgeraet
US5054114A (en) * 1988-09-27 1991-10-01 Rockwell International Corporation Broadband RF transmit/receive switch
DE19644448A1 (de) * 1996-01-22 1997-07-24 Mitsubishi Electric Corp Integrierte Schaltung

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4637073A (en) * 1984-06-25 1987-01-13 Raytheon Company Transmit/receive switch
JPH01103930U (https=) * 1987-12-28 1989-07-13
JPH04122129A (ja) * 1990-09-13 1992-04-22 Hitachi Ltd 移動無線通信装置
US5477184A (en) * 1992-04-15 1995-12-19 Sanyo Electric Co., Ltd. Fet switching circuit for switching between a high power transmitting signal and a lower power receiving signal
JP2848502B2 (ja) * 1992-04-24 1999-01-20 日本電信電話株式会社 マイクロ波半導体スイッチ
JPH05308233A (ja) * 1992-04-28 1993-11-19 Nippon Telegr & Teleph Corp <Ntt> 高周波増幅装置
DE4222190A1 (de) * 1992-07-07 1994-01-13 Philips Patentverwaltung Funkgerät mit einer Antennenumschaltvorrichtung
JPH06224647A (ja) * 1992-12-03 1994-08-12 Sharp Corp 増幅回路
JPH0823270A (ja) * 1994-07-08 1996-01-23 Nippon Telegr & Teleph Corp <Ntt> 高周波スイッチ
JP3169775B2 (ja) * 1994-08-29 2001-05-28 株式会社日立製作所 半導体回路、スイッチ及びそれを用いた通信機
DE69529869T2 (de) * 1994-08-30 2004-02-05 Matsushita Electric Industrial Co., Ltd., Kadoma Sende-/Empfangsumschaltes für Radiokommunikationsgerät
JPH0955681A (ja) * 1995-08-16 1997-02-25 Shimada Phys & Chem Ind Co Ltd 時分割複信送受信装置
JP3249393B2 (ja) * 1995-09-28 2002-01-21 株式会社東芝 スイッチ回路
EP0878918A4 (en) * 1995-12-18 2002-09-18 Matsushita Electric Industrial Co Ltd RADIO COMMUNICATION END RECEIVER AND INTEGRATED SEMICONDUCTOR CIRCUIT
US5777530A (en) * 1996-01-31 1998-07-07 Matsushita Electric Industrial Co., Ltd. Switch attenuator
DE19704151C1 (de) * 1997-02-04 1998-08-27 Siemens Ag Sende-Empfangs-Umschalteanordnung
US5883541A (en) * 1997-03-05 1999-03-16 Nec Corporation High frequency switching circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2426506A1 (de) * 1974-05-31 1975-12-04 Standard Elektrik Lorenz Ag Funk- sende/empfangsgeraet
US5054114A (en) * 1988-09-27 1991-10-01 Rockwell International Corporation Broadband RF transmit/receive switch
DE19644448A1 (de) * 1996-01-22 1997-07-24 Mitsubishi Electric Corp Integrierte Schaltung

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US8583111B2 (en) 2001-10-10 2013-11-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US9225378B2 (en) 2001-10-10 2015-12-29 Peregrine Semiconductor Corpopration Switch circuit and method of switching radio frequency signals
US8649754B2 (en) 2004-06-23 2014-02-11 Peregrine Semiconductor Corporation Integrated RF front end with stacked transistor switch
US9369087B2 (en) 2004-06-23 2016-06-14 Peregrine Semiconductor Corporation Integrated RF front end with stacked transistor switch
US8559907B2 (en) 2004-06-23 2013-10-15 Peregrine Semiconductor Corporation Integrated RF front end with stacked transistor switch
US9397656B2 (en) 2005-07-11 2016-07-19 Peregrine Semiconductor Corporation Circuit and method for controlling charge injection in radio frequency switches
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US8954902B2 (en) 2005-07-11 2015-02-10 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US9087899B2 (en) 2005-07-11 2015-07-21 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US8405147B2 (en) 2005-07-11 2013-03-26 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
US9130564B2 (en) 2005-07-11 2015-09-08 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
US8536636B2 (en) 2007-04-26 2013-09-17 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US9177737B2 (en) 2007-04-26 2015-11-03 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US9197194B2 (en) 2008-02-28 2015-11-24 Peregrine Semiconductor Corporation Methods and apparatuses for use in tuning reactance in a circuit device
US8669804B2 (en) 2008-02-28 2014-03-11 Peregrine Semiconductor Corporation Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
US9293262B2 (en) 2008-02-28 2016-03-22 Peregrine Semiconductor Corporation Digitally tuned capacitors with tapered and reconfigurable quality factors
US9106227B2 (en) 2008-02-28 2015-08-11 Peregrine Semiconductor Corporation Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
US8604864B2 (en) 2008-02-28 2013-12-10 Peregrine Semiconductor Corporation Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
US9024700B2 (en) 2008-02-28 2015-05-05 Peregrine Semiconductor Corporation Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US9419565B2 (en) 2013-03-14 2016-08-16 Peregrine Semiconductor Corporation Hot carrier injection compensation
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed

Also Published As

Publication number Publication date
US6066993A (en) 2000-05-23
DE19832565A1 (de) 1999-08-05
JP3711193B2 (ja) 2005-10-26
JPH11205188A (ja) 1999-07-30

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