DE1809817A1 - Halbleitervorrichtung mit einem Halbleiterkoerper,von dem eine Oberflaeche wenigstens oertlich mit einer Oxydhaut bedeckit ist,und Verfahren zur Herstellung einer planaeren Halbleitervorrichtung - Google Patents

Halbleitervorrichtung mit einem Halbleiterkoerper,von dem eine Oberflaeche wenigstens oertlich mit einer Oxydhaut bedeckit ist,und Verfahren zur Herstellung einer planaeren Halbleitervorrichtung

Info

Publication number
DE1809817A1
DE1809817A1 DE19681809817 DE1809817A DE1809817A1 DE 1809817 A1 DE1809817 A1 DE 1809817A1 DE 19681809817 DE19681809817 DE 19681809817 DE 1809817 A DE1809817 A DE 1809817A DE 1809817 A1 DE1809817 A1 DE 1809817A1
Authority
DE
Germany
Prior art keywords
oxide skin
oxide
covered
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19681809817
Other languages
German (de)
English (en)
Inventor
Else Kooi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1809817A1 publication Critical patent/DE1809817A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Formation Of Insulating Films (AREA)
  • Light Receiving Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
DE19681809817 1967-11-21 1968-11-20 Halbleitervorrichtung mit einem Halbleiterkoerper,von dem eine Oberflaeche wenigstens oertlich mit einer Oxydhaut bedeckit ist,und Verfahren zur Herstellung einer planaeren Halbleitervorrichtung Ceased DE1809817A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6715753.A NL162250C (nl) 1967-11-21 1967-11-21 Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen.

Publications (1)

Publication Number Publication Date
DE1809817A1 true DE1809817A1 (de) 1969-12-11

Family

ID=19801764

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681809817 Ceased DE1809817A1 (de) 1967-11-21 1968-11-20 Halbleitervorrichtung mit einem Halbleiterkoerper,von dem eine Oberflaeche wenigstens oertlich mit einer Oxydhaut bedeckit ist,und Verfahren zur Herstellung einer planaeren Halbleitervorrichtung

Country Status (12)

Country Link
US (1) US3649886A (https=)
JP (1) JPS5528217B1 (https=)
AT (1) AT320737B (https=)
BE (1) BE724277A (https=)
BR (1) BR6804218D0 (https=)
CH (1) CH527497A (https=)
DE (1) DE1809817A1 (https=)
ES (1) ES360408A1 (https=)
FR (1) FR1592750A (https=)
GB (1) GB1250509A (https=)
NL (1) NL162250C (https=)
SE (1) SE354378B (https=)

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Publication number Priority date Publication date Assignee Title
US4089992A (en) * 1965-10-11 1978-05-16 International Business Machines Corporation Method for depositing continuous pinhole free silicon nitride films and products produced thereby
DE2047998A1 (de) * 1970-09-30 1972-04-06 Licentia Gmbh Verfahren zum Herstellen einer Planaranordnung
US3856587A (en) * 1971-03-26 1974-12-24 Co Yamazaki Kogyo Kk Method of fabricating semiconductor memory device gate
US3853496A (en) * 1973-01-02 1974-12-10 Gen Electric Method of making a metal insulator silicon field effect transistor (mis-fet) memory device and the product
DE2316096B2 (de) * 1973-03-30 1975-02-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von integrierten Schaltungen mit Feldeffekttransistoren unterschiedlichen Leltungszustandes
US3924024A (en) * 1973-04-02 1975-12-02 Ncr Co Process for fabricating MNOS non-volatile memories
JPS6022497B2 (ja) * 1974-10-26 1985-06-03 ソニー株式会社 半導体装置
JPS5922381B2 (ja) * 1975-12-03 1984-05-26 株式会社東芝 ハンドウタイソシノ セイゾウホウホウ
JPS54149469A (en) * 1978-05-16 1979-11-22 Toshiba Corp Semiconductor device
JPS5587444A (en) 1978-12-26 1980-07-02 Fujitsu Ltd Method of forming insulating film on semiconductor surface
JPS5627935A (en) * 1979-08-15 1981-03-18 Toshiba Corp Semiconductor device
DE3170327D1 (en) * 1980-11-06 1985-06-05 Nat Res Dev Annealing process for a thin-film semiconductor device and obtained devices
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
US4430663A (en) 1981-03-25 1984-02-07 Bell Telephone Laboratories, Incorporated Prevention of surface channels in silicon semiconductor devices
US5043293A (en) * 1984-05-03 1991-08-27 Texas Instruments Incorporated Dual oxide channel stop for semiconductor devices
US5260233A (en) * 1992-11-06 1993-11-09 International Business Machines Corporation Semiconductor device and wafer structure having a planar buried interconnect by wafer bonding
JPH1187663A (ja) * 1997-09-11 1999-03-30 Nec Corp 半導体集積回路装置およびその製造方法
US6168859B1 (en) * 1998-01-29 2001-01-02 The Dow Chemical Company Filler powder comprising a partially coated alumina powder and process to make the filler powder
US6303972B1 (en) 1998-11-25 2001-10-16 Micron Technology, Inc. Device including a conductive layer protected against oxidation
US7067861B1 (en) * 1998-11-25 2006-06-27 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
DE19923466B4 (de) * 1999-05-21 2005-09-29 Infineon Technologies Ag Junctionsisolierter Lateral-MOSFET für High-/Low-Side-Schalter
JP2007165492A (ja) * 2005-12-13 2007-06-28 Seiko Instruments Inc 半導体集積回路装置
US10211326B2 (en) * 2016-03-31 2019-02-19 Stmicroelectronics (Tours) Sas Vertical power component
FR3049769B1 (fr) * 2016-03-31 2018-07-27 Stmicroelectronics (Tours) Sas Composant de puissance vertical
FR3049770B1 (fr) * 2016-03-31 2018-07-27 Stmicroelectronics (Tours) Sas Composant de puissance vertical

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA667423A (en) * 1963-07-23 Northern Electric Company Limited Semiconductor device and method of manufacture
US3477886A (en) * 1964-12-07 1969-11-11 Motorola Inc Controlled diffusions in semiconductive materials
US3484313A (en) * 1965-03-25 1969-12-16 Hitachi Ltd Method of manufacturing semiconductor devices
US3463974A (en) * 1966-07-01 1969-08-26 Fairchild Camera Instr Co Mos transistor and method of manufacture
US3455020A (en) * 1966-10-13 1969-07-15 Rca Corp Method of fabricating insulated-gate field-effect devices
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
US3550256A (en) * 1967-12-21 1970-12-29 Fairchild Camera Instr Co Control of surface inversion of p- and n-type silicon using dense dielectrics

Also Published As

Publication number Publication date
GB1250509A (https=) 1971-10-20
ES360408A1 (es) 1970-10-16
NL162250C (nl) 1980-04-15
JPS5528217B1 (https=) 1980-07-26
BE724277A (https=) 1969-05-21
AT320737B (de) 1975-02-25
US3649886A (en) 1972-03-14
BR6804218D0 (pt) 1973-04-17
SE354378B (https=) 1973-03-05
CH527497A (de) 1972-08-31
FR1592750A (https=) 1970-05-19
NL6715753A (https=) 1969-05-23
NL162250B (nl) 1979-11-15

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971
8131 Rejection