DE112021000105T5 - Halbleitervorrichtung und verfahren zur herstellung einer halbleitervorrichtung - Google Patents

Halbleitervorrichtung und verfahren zur herstellung einer halbleitervorrichtung Download PDF

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Publication number
DE112021000105T5
DE112021000105T5 DE112021000105.1T DE112021000105T DE112021000105T5 DE 112021000105 T5 DE112021000105 T5 DE 112021000105T5 DE 112021000105 T DE112021000105 T DE 112021000105T DE 112021000105 T5 DE112021000105 T5 DE 112021000105T5
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DE
Germany
Prior art keywords
contact
trench
region
contact layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112021000105.1T
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German (de)
English (en)
Inventor
Yuichi Harada
Seiji Noguchi
Norihiro Komiyama
Yoshihiro Ikura
Yosuke Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE112021000105T5 publication Critical patent/DE112021000105T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H10D84/144—VDMOS having built-in components the built-in components being PN junction diodes in antiparallel diode configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE112021000105.1T 2020-04-16 2021-03-08 Halbleitervorrichtung und verfahren zur herstellung einer halbleitervorrichtung Pending DE112021000105T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-073309 2020-04-16
JP2020073309 2020-04-16
PCT/JP2021/008891 WO2021210293A1 (ja) 2020-04-16 2021-03-08 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE112021000105T5 true DE112021000105T5 (de) 2022-06-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021000105.1T Pending DE112021000105T5 (de) 2020-04-16 2021-03-08 Halbleitervorrichtung und verfahren zur herstellung einer halbleitervorrichtung

Country Status (5)

Country Link
US (2) US12199162B2 (https=)
JP (2) JP7384274B2 (https=)
CN (1) CN114503280B (https=)
DE (1) DE112021000105T5 (https=)
WO (1) WO2021210293A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116348995A (zh) * 2021-05-19 2023-06-27 富士电机株式会社 半导体装置及制造方法
JP7779813B2 (ja) * 2022-08-09 2025-12-03 株式会社東芝 半導体装置
JP7844088B2 (ja) * 2022-11-01 2026-04-13 三菱電機株式会社 半導体装置およびその製造方法
CN119631592A (zh) * 2023-02-07 2025-03-14 富士电机株式会社 半导体装置
DE112023002505T5 (de) * 2023-02-07 2025-04-30 Fuji Electric Co., Ltd. Halbleitervorrichtung
JP2025007863A (ja) * 2023-07-03 2025-01-17 ミネベアパワーデバイス株式会社 半導体装置
CN117497574B (zh) * 2023-08-31 2024-05-14 海信家电集团股份有限公司 半导体装置
JP2025111861A (ja) * 2024-01-18 2025-07-31 ミネベアパワーデバイス株式会社 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013065724A (ja) 2011-09-16 2013-04-11 Toshiba Corp 半導体装置及びその製造方法
JP2014158013A (ja) 2013-01-17 2014-08-28 Denso Corp 半導体装置およびその製造方法
WO2018052099A1 (ja) 2016-09-14 2018-03-22 富士電機株式会社 Ｒｃ－ｉｇｂｔおよびその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08172183A (ja) * 1994-12-16 1996-07-02 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP2008160039A (ja) 2006-12-26 2008-07-10 Nec Electronics Corp 半導体装置及びその製造方法
JP2009246225A (ja) 2008-03-31 2009-10-22 Rohm Co Ltd 半導体装置
US8067798B2 (en) * 2008-03-31 2011-11-29 Rohm Co., Ltd. Semiconductor device
JP5075280B2 (ja) 2009-10-23 2012-11-21 パナソニック株式会社 半導体装置およびその製造方法
JP6284314B2 (ja) * 2012-08-21 2018-02-28 ローム株式会社 半導体装置
JP2016063004A (ja) * 2014-09-16 2016-04-25 株式会社東芝 半導体装置及びその製造方法
JP6844147B2 (ja) * 2016-02-12 2021-03-17 富士電機株式会社 半導体装置
JP2018206842A (ja) 2017-05-31 2018-12-27 ルネサスエレクトロニクス株式会社 半導体装置
JP7143575B2 (ja) * 2017-07-18 2022-09-29 富士電機株式会社 半導体装置
JP6958093B2 (ja) * 2017-08-09 2021-11-02 富士電機株式会社 半導体装置
DE102017128633B4 (de) * 2017-12-01 2024-09-19 Infineon Technologies Ag Siliziumcarbid-halbleiterbauelement mit grabengatestrukturen und abschirmgebieten

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013065724A (ja) 2011-09-16 2013-04-11 Toshiba Corp 半導体装置及びその製造方法
JP2014158013A (ja) 2013-01-17 2014-08-28 Denso Corp 半導体装置およびその製造方法
WO2018052099A1 (ja) 2016-09-14 2018-03-22 富士電機株式会社 Ｒｃ－ｉｇｂｔおよびその製造方法

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Publication number Publication date
JP2024010217A (ja) 2024-01-23
US12199162B2 (en) 2025-01-14
JPWO2021210293A1 (https=) 2021-10-21
CN114503280B (zh) 2026-04-24
WO2021210293A1 (ja) 2021-10-21
US20220216314A1 (en) 2022-07-07
US20250151365A1 (en) 2025-05-08
JP7803330B2 (ja) 2026-01-21
JP7384274B2 (ja) 2023-11-21
CN114503280A (zh) 2022-05-13

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