JPWO2021210293A1 - - Google Patents
Info
- Publication number
- JPWO2021210293A1 JPWO2021210293A1 JP2022515241A JP2022515241A JPWO2021210293A1 JP WO2021210293 A1 JPWO2021210293 A1 JP WO2021210293A1 JP 2022515241 A JP2022515241 A JP 2022515241A JP 2022515241 A JP2022515241 A JP 2022515241A JP WO2021210293 A1 JPWO2021210293 A1 JP WO2021210293A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
- H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/128—Anode regions of diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/157—Impurity concentrations or distributions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/422—PN diodes having the PN junctions in mesas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/141—VDMOS having built-in components
- H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
- H10D84/144—VDMOS having built-in components the built-in components being PN junction diodes in antiparallel diode configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/232—Emitter electrodes for IGBTs
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023191365A JP7803330B2 (ja) | 2020-04-16 | 2023-11-09 | 半導体装置および半導体装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020073309 | 2020-04-16 | ||
| JP2020073309 | 2020-04-16 | ||
| PCT/JP2021/008891 WO2021210293A1 (ja) | 2020-04-16 | 2021-03-08 | 半導体装置および半導体装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023191365A Division JP7803330B2 (ja) | 2020-04-16 | 2023-11-09 | 半導体装置および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021210293A1 true JPWO2021210293A1 (https=) | 2021-10-21 |
| JPWO2021210293A5 JPWO2021210293A5 (https=) | 2022-06-09 |
| JP7384274B2 JP7384274B2 (ja) | 2023-11-21 |
Family
ID=78085302
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022515241A Active JP7384274B2 (ja) | 2020-04-16 | 2021-03-08 | 半導体装置および半導体装置の製造方法 |
| JP2023191365A Active JP7803330B2 (ja) | 2020-04-16 | 2023-11-09 | 半導体装置および半導体装置の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023191365A Active JP7803330B2 (ja) | 2020-04-16 | 2023-11-09 | 半導体装置および半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12199162B2 (https=) |
| JP (2) | JP7384274B2 (https=) |
| CN (1) | CN114503280B (https=) |
| DE (1) | DE112021000105T5 (https=) |
| WO (1) | WO2021210293A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116348995A (zh) | 2021-05-19 | 2023-06-27 | 富士电机株式会社 | 半导体装置及制造方法 |
| JP7779813B2 (ja) * | 2022-08-09 | 2025-12-03 | 株式会社東芝 | 半導体装置 |
| JP7844088B2 (ja) * | 2022-11-01 | 2026-04-13 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| DE112023002505T5 (de) * | 2023-02-07 | 2025-04-30 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
| JP7845516B2 (ja) * | 2023-02-07 | 2026-04-14 | 富士電機株式会社 | 半導体装置 |
| JP2025007863A (ja) * | 2023-07-03 | 2025-01-17 | ミネベアパワーデバイス株式会社 | 半導体装置 |
| CN117497574B (zh) * | 2023-08-31 | 2024-05-14 | 海信家电集团股份有限公司 | 半导体装置 |
| JP2025111861A (ja) * | 2024-01-18 | 2025-07-31 | ミネベアパワーデバイス株式会社 | 半導体装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009246225A (ja) * | 2008-03-31 | 2009-10-22 | Rohm Co Ltd | 半導体装置 |
| WO2011048800A1 (ja) * | 2009-10-23 | 2011-04-28 | パナソニック株式会社 | 半導体装置およびその製造方法 |
| JP2013065724A (ja) * | 2011-09-16 | 2013-04-11 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2014158013A (ja) * | 2013-01-17 | 2014-08-28 | Denso Corp | 半導体装置およびその製造方法 |
| WO2018052099A1 (ja) * | 2016-09-14 | 2018-03-22 | 富士電機株式会社 | Ｒｃ－ｉｇｂｔおよびその製造方法 |
| JP2018206842A (ja) * | 2017-05-31 | 2018-12-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08172183A (ja) * | 1994-12-16 | 1996-07-02 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
| JP2008160039A (ja) * | 2006-12-26 | 2008-07-10 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| US8067798B2 (en) * | 2008-03-31 | 2011-11-29 | Rohm Co., Ltd. | Semiconductor device |
| JP6284314B2 (ja) * | 2012-08-21 | 2018-02-28 | ローム株式会社 | 半導体装置 |
| JP2016063004A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP6844147B2 (ja) * | 2016-02-12 | 2021-03-17 | 富士電機株式会社 | 半導体装置 |
| JP7143575B2 (ja) * | 2017-07-18 | 2022-09-29 | 富士電機株式会社 | 半導体装置 |
| JP6958093B2 (ja) * | 2017-08-09 | 2021-11-02 | 富士電機株式会社 | 半導体装置 |
| DE102017128633B4 (de) * | 2017-12-01 | 2024-09-19 | Infineon Technologies Ag | Siliziumcarbid-halbleiterbauelement mit grabengatestrukturen und abschirmgebieten |
-
2021
- 2021-03-08 CN CN202180005621.7A patent/CN114503280B/zh active Active
- 2021-03-08 WO PCT/JP2021/008891 patent/WO2021210293A1/ja not_active Ceased
- 2021-03-08 JP JP2022515241A patent/JP7384274B2/ja active Active
- 2021-03-08 DE DE112021000105.1T patent/DE112021000105T5/de active Pending
-
2022
- 2022-03-22 US US17/700,534 patent/US12199162B2/en active Active
-
2023
- 2023-11-09 JP JP2023191365A patent/JP7803330B2/ja active Active
-
2025
- 2025-01-09 US US19/014,248 patent/US20250151365A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009246225A (ja) * | 2008-03-31 | 2009-10-22 | Rohm Co Ltd | 半導体装置 |
| WO2011048800A1 (ja) * | 2009-10-23 | 2011-04-28 | パナソニック株式会社 | 半導体装置およびその製造方法 |
| JP2013065724A (ja) * | 2011-09-16 | 2013-04-11 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2014158013A (ja) * | 2013-01-17 | 2014-08-28 | Denso Corp | 半導体装置およびその製造方法 |
| WO2018052099A1 (ja) * | 2016-09-14 | 2018-03-22 | 富士電機株式会社 | Ｒｃ－ｉｇｂｔおよびその製造方法 |
| JP2018206842A (ja) * | 2017-05-31 | 2018-12-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220216314A1 (en) | 2022-07-07 |
| US12199162B2 (en) | 2025-01-14 |
| JP7803330B2 (ja) | 2026-01-21 |
| JP2024010217A (ja) | 2024-01-23 |
| CN114503280A (zh) | 2022-05-13 |
| US20250151365A1 (en) | 2025-05-08 |
| CN114503280B (zh) | 2026-04-24 |
| WO2021210293A1 (ja) | 2021-10-21 |
| DE112021000105T5 (de) | 2022-06-30 |
| JP7384274B2 (ja) | 2023-11-21 |
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