DE112016004600B4 - Epitaktisches Siliziumkarbidsubstrat, Verwendung des Siliziumkarbidsubstrats und Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung - Google Patents

Epitaktisches Siliziumkarbidsubstrat, Verwendung des Siliziumkarbidsubstrats und Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung

Info

Publication number
DE112016004600B4
DE112016004600B4 DE112016004600.6T DE112016004600T DE112016004600B4 DE 112016004600 B4 DE112016004600 B4 DE 112016004600B4 DE 112016004600 T DE112016004600 T DE 112016004600T DE 112016004600 B4 DE112016004600 B4 DE 112016004600B4
Authority
DE
Germany
Prior art keywords
silicon carbide
main surface
carbide substrate
loops
dislocation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112016004600.6T
Other languages
German (de)
English (en)
Other versions
DE112016004600T5 (de
Inventor
Taro Nishiguchi
Kenji Hiratsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE112016004600T5 publication Critical patent/DE112016004600T5/de
Application granted granted Critical
Publication of DE112016004600B4 publication Critical patent/DE112016004600B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/047—Making n or p doped regions or layers, e.g. using diffusion using ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
DE112016004600.6T 2015-10-07 2016-07-04 Epitaktisches Siliziumkarbidsubstrat, Verwendung des Siliziumkarbidsubstrats und Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung Active DE112016004600B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015199565 2015-10-07
JP2015-199565 2015-10-07
PCT/JP2016/069801 WO2017061154A1 (ja) 2015-10-07 2016-07-04 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE112016004600T5 DE112016004600T5 (de) 2018-06-21
DE112016004600B4 true DE112016004600B4 (de) 2025-10-23

Family

ID=58487499

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112016004600.6T Active DE112016004600B4 (de) 2015-10-07 2016-07-04 Epitaktisches Siliziumkarbidsubstrat, Verwendung des Siliziumkarbidsubstrats und Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US20170275779A1 (enExample)
JP (2) JP6798293B2 (enExample)
CN (1) CN108138360B (enExample)
DE (1) DE112016004600B4 (enExample)
WO (1) WO2017061154A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001189692A (ja) * 1999-12-28 2001-07-10 Matsushita Electric Ind Co Ltd 受信装置及び利得制御方法
US20170275779A1 (en) * 2015-10-07 2017-09-28 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
JP6590116B2 (ja) * 2017-09-08 2019-10-16 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
DE102018106967B3 (de) * 2018-03-23 2019-05-23 Infineon Technologies Ag SILIZIUMCARBID HALBLEITERBAUELEMENT und Halbleiterdiode
US12014924B2 (en) * 2018-07-20 2024-06-18 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
US11862684B2 (en) * 2019-01-08 2024-01-02 Sumitomo Electric Industries, Ltd. Recycle wafer of silicon carbide and method for manufacturing silicon carbide semiconductor device
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP7319502B2 (ja) * 2020-01-09 2023-08-02 株式会社東芝 炭化珪素基体の製造方法、半導体装置の製造方法、炭化珪素基体、及び、半導体装置
EP3943645A1 (en) * 2020-07-21 2022-01-26 SiCrystal GmbH Sic crystalline substrates with an optimal orientation of lattice planes for fissure reduction and method of producing same
EP3943644A1 (en) * 2020-07-21 2022-01-26 SiCrystal GmbH Sic crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110006309A1 (en) * 2007-09-12 2011-01-13 Showa Denko K.K. EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF EXPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US51301A (en) * 1865-12-05 Improvement in mowing-machines
US93518A (en) * 1869-08-10 Improvement in stuffing-boxes
US53517A (en) * 1866-03-27 Improvement in sealing boxes
US123502A (en) * 1872-02-06 Improvement in hoes
US33503A (en) * 1861-10-15 Improvement in railroad-rails
US71301A (en) * 1867-11-26 Improvement in gang-ploughs
US81910A (en) * 1868-09-08 keltum
US40103A (en) * 1863-09-29 Improvement in quartz-crushers
US5679153A (en) * 1994-11-30 1997-10-21 Cree Research, Inc. Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
JP4880164B2 (ja) * 2000-02-15 2012-02-22 ザ フォックス グループ，インコーポレイティド 低欠陥密度炭化ケイ素材料
US6863728B2 (en) * 2001-02-14 2005-03-08 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
DE10247017B4 (de) * 2001-10-12 2009-06-10 Denso Corp., Kariya-shi SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist
TW200307064A (en) * 2002-03-19 2003-12-01 Central Res Inst Elect Method for preparing SiC crystal with reduced micro-pipes extended from substrate, SiC crystal, SiC monocrystalline film, SiC semiconductor component, SiC monocrystalline substrate and electronic device, and method for producing large SiC crystal
US6869480B1 (en) * 2002-07-17 2005-03-22 The United States Of America As Represented By The United States National Aeronautics And Space Administration Method for the production of nanometer scale step height reference specimens
JP3764462B2 (ja) * 2003-04-10 2006-04-05 株式会社豊田中央研究所 炭化ケイ素単結晶の製造方法
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
US20070290211A1 (en) * 2004-03-26 2007-12-20 The Kansai Electric Power Co., Inc. Bipolar Semiconductor Device and Process for Producing the Same
DE102005017814B4 (de) * 2004-04-19 2016-08-11 Denso Corporation Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
EP1933386B1 (en) * 2005-09-14 2012-11-07 Central Research Institute of Electric Power Industry Process for producing silicon carbide semiconductor device
JP5070691B2 (ja) * 2005-10-03 2012-11-14 住友電気工業株式会社 炭化珪素基板および縦型半導体装置
US8455269B2 (en) * 2006-08-04 2013-06-04 Central Research Institute Of Electric Power Industry Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices
WO2009048997A1 (en) * 2007-10-12 2009-04-16 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Producing epitaxial layers with low basal plane dislocation concentrations
JP5504597B2 (ja) * 2007-12-11 2014-05-28 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
JP4978637B2 (ja) * 2009-02-12 2012-07-18 株式会社デンソー 炭化珪素単結晶の製造方法
CN102422402A (zh) * 2009-05-11 2012-04-18 住友电气工业株式会社 半导体器件
US9464366B2 (en) * 2009-08-20 2016-10-11 The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC
US10256094B2 (en) * 2009-08-20 2019-04-09 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
US10256090B2 (en) * 2009-08-20 2019-04-09 The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
JP4959763B2 (ja) * 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
JP4887418B2 (ja) * 2009-12-14 2012-02-29 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
JP4850960B2 (ja) * 2010-04-07 2012-01-11 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板の製造方法
JP5598542B2 (ja) * 2010-05-10 2014-10-01 三菱電機株式会社 炭化珪素エピタキシャルウエハ及びその製造方法並びにエピタキシャル成長用炭化珪素バルク基板及びその製造方法
JP4880052B2 (ja) * 2010-05-11 2012-02-22 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP5276068B2 (ja) * 2010-08-26 2013-08-28 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法
SE1051137A1 (sv) * 2010-10-29 2012-04-30 Fairchild Semiconductor Förfarande för tillverkning av en kiselkarbid bipolär transistor och kiselkarbid bipolär transistor därav
FR2969815B1 (fr) * 2010-12-27 2013-11-22 Soitec Silicon On Insulator Tech Procédé de fabrication d'un dispositif semi-conducteur
KR101494122B1 (ko) * 2011-04-21 2015-02-16 신닛테츠스미킨 카부시키카이샤 에피택셜 탄화 규소 단결정 기판 및 그 제조 방법
JP6025306B2 (ja) * 2011-05-16 2016-11-16 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
JP5958949B2 (ja) * 2011-05-26 2016-08-02 一般財団法人電力中央研究所 炭化珪素基板、炭化珪素ウェハ、炭化珪素ウェハの製造方法及び炭化珪素半導体素子
KR101530057B1 (ko) * 2011-08-29 2015-06-18 신닛테츠스미킨 카부시키카이샤 탄화규소 단결정 기판 및 그 제조 방법
JP5961357B2 (ja) * 2011-09-09 2016-08-02 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
US9885124B2 (en) * 2011-11-23 2018-02-06 University Of South Carolina Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
JP5750363B2 (ja) * 2011-12-02 2015-07-22 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
US8860040B2 (en) * 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
JP2014146748A (ja) * 2013-01-30 2014-08-14 Toshiba Corp 半導体装置及びその製造方法並びに半導体基板
JP6090998B2 (ja) * 2013-01-31 2017-03-08 一般財団法人電力中央研究所 六方晶単結晶の製造方法、六方晶単結晶ウエハの製造方法
JP2014175412A (ja) * 2013-03-07 2014-09-22 Toshiba Corp 半導体基板及び半導体装置
US8940614B2 (en) * 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
CN103280502B (zh) * 2013-05-23 2016-12-28 安徽三安光电有限公司 发光器件及其制作方法
JP6183010B2 (ja) * 2013-07-03 2017-08-23 住友電気工業株式会社 炭化珪素単結晶基板およびその製造方法
JP6311384B2 (ja) * 2014-03-24 2018-04-18 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP2015199565A (ja) 2014-04-07 2015-11-12 株式会社小森コーポレーション シート検出装置
US9425262B2 (en) * 2014-05-29 2016-08-23 Fairchild Semiconductor Corporation Configuration of portions of a power device within a silicon carbide crystal
JP2016166112A (ja) * 2015-03-10 2016-09-15 株式会社東芝 半導体基板及び半導体装置
JP6584253B2 (ja) * 2015-09-16 2019-10-02 ローム株式会社 ＳｉＣエピタキシャルウェハ、ＳｉＣエピタキシャルウェハの製造装置、ＳｉＣエピタキシャルウェハの製造方法、および半導体装置
US20170275779A1 (en) 2015-10-07 2017-09-28 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110006309A1 (en) * 2007-09-12 2011-01-13 Showa Denko K.K. EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF EXPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE

Also Published As

Publication number Publication date
JP2017071551A (ja) 2017-04-13
JP6798293B2 (ja) 2020-12-09
WO2017061154A1 (ja) 2017-04-13
CN108138360B (zh) 2020-12-08
DE112016004600T5 (de) 2018-06-21
CN108138360A (zh) 2018-06-08
JP2021035905A (ja) 2021-03-04
JP7052851B2 (ja) 2022-04-12
US20170275779A1 (en) 2017-09-28

Similar Documents

Publication Publication Date Title
DE112016004600B4 (de) Epitaktisches Siliziumkarbidsubstrat, Verwendung des Siliziumkarbidsubstrats und Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung
DE60033829T2 (de) SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE
DE112010000953B4 (de) Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung
DE102007047231B4 (de) Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung
DE112016006385T5 (de) Siliziumkarbid-Epitaxiesubstrat und Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung
DE112015003483B4 (de) Verfahren zum herstellen einer halbleitervorrichtung
US20160254148A1 (en) Silicon carbide semiconductor device and manufacturing method for same
DE112014002647B4 (de) Siliziumkarbid-Substrat und Verfahren zur Herstellung desselben, Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung und Verwendung des Siliziumkarbid-Substrats für die Siliziumkarbid-Halbleitervorrichtung
DE112017007060T5 (de) Leistungshalbleitereinheit
DE112016004430T5 (de) Verfahren zur Herstellung eines Siliziumkarbid-Epitaxiesubstrats, Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung und Vorrichtung zur Herstellung eines Siliziumkarbid-Epitaxiesubstrats
DE102015216091A1 (de) Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung und Siliziumkarbid-Halbleitervorrichtung
DE112016004127T5 (de) Siliziumkarbid-Epitaxiesubstrat und Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung
DE112017005034T5 (de) Siliziumkarbid-epitaxiesubstrat und verfahren zur herstellung einer siliziumkarbid-halbleitervorrichtung
DE112015003959T5 (de) Siliziumkarbid-Halbleitervorrichtung und Verfahren zur Herstellung derselben
JP6239097B2 (ja) ＳｉＣエピタキシャルウエハ
DE112014004717T5 (de) Siliciumcarbid-Halbleitervorrichtung und Verfahren zum Herstellen einer Siliciumcarbid-Halbleitervorrichtung
DE112017006965T5 (de) Epitaktisches Siliziumcarbidsubstrat und Verfahren zum Herstellen einer Siliziumcarbid-Halbleitervorrichtung
DE102017201744A1 (de) Verfahren zum Herstellen eines Siliziumkarbid-Epitaxialwafers, Verfahren zum Herstellen einer Siliziumkarbid-Halbleiteranordnung und Vorrichtung zum Herstellen eines Siliziumkarbid-Epitaxialwafers
CN112522781B (zh) 碳化硅衬底上的缓冲层及其形成方法
JP2009182240A (ja) 半導体装置の製造方法および半導体装置
DE112017006972T5 (de) Siliziumcarbid-Epitaxiesubstrat und Verfahren zur Herstellung einer Siliziumcarbid-Halbleitervorrichtung
DE112014004465T5 (de) Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung
US10573716B2 (en) Method of manufacturing a silicon carbide semiconductor device including depositing a second silicon carbide semiconductor on an etched silicon carbide base region
DE102018111450A1 (de) Verfahren zum Verarbeiten eines Breiter-Bandabstand-Halbleiterwafers, Verfahren zum Bilden einer Mehrzahl von dünnen Breiter-Bandabstand-Halbleiterwafern und Breiter-Bandabstand-Halbleiterwafer
EP2130214B1 (de) Selektives wachstum von polykristallinem siliziumhaltigen halbleitermaterial auf siliziumhaltiger halbleiteroberfläche

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division