DE112010005278B4 - Pin-diode - Google Patents
Pin-diode Download PDFInfo
- Publication number
- DE112010005278B4 DE112010005278B4 DE112010005278.6T DE112010005278T DE112010005278B4 DE 112010005278 B4 DE112010005278 B4 DE 112010005278B4 DE 112010005278 T DE112010005278 T DE 112010005278T DE 112010005278 B4 DE112010005278 B4 DE 112010005278B4
- Authority
- DE
- Germany
- Prior art keywords
- anode
- region
- anode region
- protruding
- separated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 83
- 239000012535 impurity Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 description 80
- 230000015556 catabolic process Effects 0.000 description 44
- 238000000034 method Methods 0.000 description 31
- 238000009792 diffusion process Methods 0.000 description 30
- 230000001965 increasing effect Effects 0.000 description 27
- 230000005684 electric field Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 11
- 230000006378 damage Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000002996 emotional effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010031957A JP4500892B1 (ja) | 2010-02-17 | 2010-02-17 | Ｐｉｎダイオード |
| JP2010-031957 | 2010-02-17 | ||
| PCT/JP2010/052306 WO2011101958A1 (ja) | 2010-02-17 | 2010-02-17 | Ｐｉｎダイオード |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE112010005278T5 DE112010005278T5 (de) | 2013-01-24 |
| DE112010005278B4 true DE112010005278B4 (de) | 2014-12-24 |
Family
ID=42575681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112010005278.6T Active DE112010005278B4 (de) | 2010-02-17 | 2010-02-17 | Pin-diode |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8860189B2 (zh) |
| JP (1) | JP4500892B1 (zh) |
| CN (1) | CN102687276B (zh) |
| DE (1) | DE112010005278B4 (zh) |
| WO (1) | WO2011101958A1 (zh) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013179251A (ja) * | 2012-02-09 | 2013-09-09 | Renesas Electronics Corp | 半導体装置 |
| JP6107156B2 (ja) * | 2012-05-21 | 2017-04-05 | 富士電機株式会社 | 半導体装置 |
| CN103208532B (zh) * | 2013-02-28 | 2015-06-10 | 溧阳市宏达电机有限公司 | 一种鳍型pin二极管 |
| CN103311315B (zh) * | 2013-05-15 | 2015-09-09 | 电子科技大学 | 具有肖特基接触终端的快恢复二极管 |
| CN103268887B (zh) * | 2013-05-29 | 2016-04-06 | 成都芯源系统有限公司 | 场效应晶体管、边缘结构及相关制造方法 |
| CN111384147B (zh) * | 2018-12-28 | 2021-05-14 | 比亚迪半导体股份有限公司 | Pin二极管及其制备方法 |
| CN110137280B (zh) * | 2019-05-30 | 2020-12-01 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示面板和显示装置 |
| JP7208875B2 (ja) * | 2019-09-05 | 2023-01-19 | 株式会社東芝 | 半導体装置 |
| JP7334678B2 (ja) * | 2020-06-04 | 2023-08-29 | 三菱電機株式会社 | 半導体装置 |
| CN112289867B (zh) * | 2020-10-29 | 2021-07-23 | 扬州国宇电子有限公司 | 一种大功率高压肖特基势垒二极管 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07221290A (ja) * | 1994-01-31 | 1995-08-18 | Fuji Electric Co Ltd | プレーナ型半導体装置 |
| JPH07221326A (ja) * | 1994-02-07 | 1995-08-18 | Fuji Electric Co Ltd | プレーナ型半導体素子 |
| JPH10335679A (ja) * | 1997-06-02 | 1998-12-18 | Fuji Electric Co Ltd | ダイオードとその製造方法 |
| JPH1140822A (ja) * | 1997-07-15 | 1999-02-12 | Nissan Motor Co Ltd | 半導体装置 |
| JP2000022176A (ja) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | 電力用半導体装置 |
| JP2002203955A (ja) * | 2000-12-28 | 2002-07-19 | Nippon Inter Electronics Corp | 半導体装置 |
| JP2002246609A (ja) * | 2001-02-13 | 2002-08-30 | Nippon Inter Electronics Corp | 半導体装置 |
| JP2002270857A (ja) * | 2001-03-07 | 2002-09-20 | Toshiba Corp | 半導体装置および電力変換装置 |
| JP2004247456A (ja) * | 2003-02-13 | 2004-09-02 | Toshiba Corp | 半導体装置 |
| JP2009164486A (ja) * | 2008-01-09 | 2009-07-23 | Toyota Motor Corp | 縦型ダイオードとその製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0195568A (ja) * | 1987-10-07 | 1989-04-13 | Matsushita Electron Corp | 半導体装置 |
| JPH06244405A (ja) * | 1993-02-15 | 1994-09-02 | Fuji Electric Co Ltd | 半導体素子 |
| JP3180672B2 (ja) * | 1996-06-28 | 2001-06-25 | 関西日本電気株式会社 | 半導体装置 |
| US6603185B1 (en) * | 1999-02-01 | 2003-08-05 | Fuji Electric Co., Ltd. | Voltage withstanding structure for a semiconductor device |
| JP4469584B2 (ja) * | 2003-09-12 | 2010-05-26 | 株式会社東芝 | 半導体装置 |
| JP2006269633A (ja) * | 2005-03-23 | 2006-10-05 | Toshiba Corp | 電力用半導体装置 |
| US7633135B2 (en) * | 2007-07-22 | 2009-12-15 | Alpha & Omega Semiconductor, Ltd. | Bottom anode Schottky diode structure and method |
| JP5196766B2 (ja) * | 2006-11-20 | 2013-05-15 | 株式会社東芝 | 半導体装置 |
| JP5198030B2 (ja) * | 2007-10-22 | 2013-05-15 | 株式会社東芝 | 半導体素子 |
| JP4635067B2 (ja) * | 2008-03-24 | 2011-02-16 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2010031957A (ja) | 2008-07-29 | 2010-02-12 | Nabeya Co Ltd | 切換えバルブ装置 |
| JP4945594B2 (ja) * | 2009-03-16 | 2012-06-06 | 株式会社東芝 | 電力用半導体装置 |
-
2010
- 2010-02-17 DE DE112010005278.6T patent/DE112010005278B4/de active Active
- 2010-02-17 WO PCT/JP2010/052306 patent/WO2011101958A1/ja active Application Filing
- 2010-02-17 JP JP2010031957A patent/JP4500892B1/ja active Active
- 2010-02-17 CN CN201080046474.XA patent/CN102687276B/zh active Active
- 2010-02-17 US US13/520,357 patent/US8860189B2/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07221290A (ja) * | 1994-01-31 | 1995-08-18 | Fuji Electric Co Ltd | プレーナ型半導体装置 |
| JPH07221326A (ja) * | 1994-02-07 | 1995-08-18 | Fuji Electric Co Ltd | プレーナ型半導体素子 |
| JPH10335679A (ja) * | 1997-06-02 | 1998-12-18 | Fuji Electric Co Ltd | ダイオードとその製造方法 |
| JPH1140822A (ja) * | 1997-07-15 | 1999-02-12 | Nissan Motor Co Ltd | 半導体装置 |
| JP2000022176A (ja) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | 電力用半導体装置 |
| JP2002203955A (ja) * | 2000-12-28 | 2002-07-19 | Nippon Inter Electronics Corp | 半導体装置 |
| JP2002246609A (ja) * | 2001-02-13 | 2002-08-30 | Nippon Inter Electronics Corp | 半導体装置 |
| JP2002270857A (ja) * | 2001-03-07 | 2002-09-20 | Toshiba Corp | 半導体装置および電力変換装置 |
| JP2004247456A (ja) * | 2003-02-13 | 2004-09-02 | Toshiba Corp | 半導体装置 |
| JP2009164486A (ja) * | 2008-01-09 | 2009-07-23 | Toyota Motor Corp | 縦型ダイオードとその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4500892B1 (ja) | 2010-07-14 |
| WO2011101958A1 (ja) | 2011-08-25 |
| JP2011171401A (ja) | 2011-09-01 |
| US8860189B2 (en) | 2014-10-14 |
| CN102687276A (zh) | 2012-09-19 |
| CN102687276B (zh) | 2015-03-11 |
| US20120299163A1 (en) | 2012-11-29 |
| DE112010005278T5 (de) | 2013-01-24 |
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Legal Events
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|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R016 | Response to examination communication | ||
| R018 | Grant decision by examination section/examining division | ||
| R020 | Patent grant now final |