DE10309085A1 - Defektverminderung bei galvanisch niedergeschlagenem Kupfer für Halbleiteranwendungen - Google Patents

Defektverminderung bei galvanisch niedergeschlagenem Kupfer für Halbleiteranwendungen

Info

Publication number
DE10309085A1
DE10309085A1 DE10309085A DE10309085A DE10309085A1 DE 10309085 A1 DE10309085 A1 DE 10309085A1 DE 10309085 A DE10309085 A DE 10309085A DE 10309085 A DE10309085 A DE 10309085A DE 10309085 A1 DE10309085 A1 DE 10309085A1
Authority
DE
Germany
Prior art keywords
defect
copper
reducing medium
deposition
electroplating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10309085A
Other languages
German (de)
English (en)
Inventor
John Commander
Richard Hutubise
Vincent Paneccasio
Xuan Lin
Kshama Jirage
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MacDermid Enthone Inc
Original Assignee
Enthone Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enthone Inc filed Critical Enthone Inc
Publication of DE10309085A1 publication Critical patent/DE10309085A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
DE10309085A 2002-03-05 2003-03-03 Defektverminderung bei galvanisch niedergeschlagenem Kupfer für Halbleiteranwendungen Withdrawn DE10309085A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/091,106 US7316772B2 (en) 2002-03-05 2002-03-05 Defect reduction in electrodeposited copper for semiconductor applications

Publications (1)

Publication Number Publication Date
DE10309085A1 true DE10309085A1 (de) 2003-12-11

Family

ID=27787669

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10309085A Withdrawn DE10309085A1 (de) 2002-03-05 2003-03-03 Defektverminderung bei galvanisch niedergeschlagenem Kupfer für Halbleiteranwendungen

Country Status (5)

Country Link
US (2) US7316772B2 (https=)
JP (1) JP5036954B2 (https=)
CN (1) CN100416777C (https=)
DE (1) DE10309085A1 (https=)
TW (1) TWI316976B (https=)

Cited By (1)

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US9418937B2 (en) 2011-12-09 2016-08-16 Infineon Technologies Ag Integrated circuit and method of forming an integrated circuit

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EP2547731B1 (en) 2010-03-18 2014-07-30 Basf Se Composition for metal electroplating comprising leveling agent
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CN103397354B (zh) * 2013-08-08 2016-10-26 上海新阳半导体材料股份有限公司 一种用于减少硅通孔技术镀铜退火后空洞的添加剂
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JP2017183707A (ja) * 2016-02-19 2017-10-05 インフィネオン テクノロジーズ アクチエンゲゼルシャフトＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＡＧ 電子デバイス基板およびその製造方法
JP7039601B2 (ja) 2016-09-22 2022-03-22 マクダーミッド エンソン インコーポレイテッド マイクロエレクトロニクスにおける銅電着
TWI887558B (zh) 2017-07-10 2025-06-21 美商應用材料股份有限公司 具有減少的夾帶空氣的電鍍系統
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9418937B2 (en) 2011-12-09 2016-08-16 Infineon Technologies Ag Integrated circuit and method of forming an integrated circuit
DE102012111831B4 (de) * 2011-12-09 2019-08-14 Infineon Technologies Ag Integrierte Schaltung und Verfahren zum Herstellen einer integrierten Schaltung
US10446469B2 (en) 2011-12-09 2019-10-15 Infineon Technologies Ag Semiconductor device having a copper element and method of forming a semiconductor device having a copper element

Also Published As

Publication number Publication date
JP2004043957A (ja) 2004-02-12
US9222188B2 (en) 2015-12-29
CN100416777C (zh) 2008-09-03
US7316772B2 (en) 2008-01-08
US20080121527A1 (en) 2008-05-29
CN1444258A (zh) 2003-09-24
TWI316976B (en) 2009-11-11
JP5036954B2 (ja) 2012-09-26
US20030168343A1 (en) 2003-09-11
TW200304966A (https=) 2003-10-16

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Representative=s name: MICHALSKI HUETTERMANN & PARTNER PATENTANWAELTE, DE

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Effective date: 20131001