CN100416777C - 在半导体应用的电沉积铜中缺陷的降低 - Google Patents

在半导体应用的电沉积铜中缺陷的降低 Download PDF

Info

Publication number
CN100416777C
CN100416777C CNB031107850A CN03110785A CN100416777C CN 100416777 C CN100416777 C CN 100416777C CN B031107850 A CNB031107850 A CN B031107850A CN 03110785 A CN03110785 A CN 03110785A CN 100416777 C CN100416777 C CN 100416777C
Authority
CN
China
Prior art keywords
copper
deposit
defective
agent
concentrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031107850A
Other languages
English (en)
Chinese (zh)
Other versions
CN1444258A (zh
Inventor
J·康曼德
R·赫图比塞
V·帕内卡西奥
X·林
K·吉拉格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MacDermid Enthone Inc
Original Assignee
Enthone OMI Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enthone OMI Inc filed Critical Enthone OMI Inc
Publication of CN1444258A publication Critical patent/CN1444258A/zh
Application granted granted Critical
Publication of CN100416777C publication Critical patent/CN100416777C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB031107850A 2002-03-05 2003-03-05 在半导体应用的电沉积铜中缺陷的降低 Expired - Fee Related CN100416777C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/091,106 US7316772B2 (en) 2002-03-05 2002-03-05 Defect reduction in electrodeposited copper for semiconductor applications
US10/091106 2002-03-05

Publications (2)

Publication Number Publication Date
CN1444258A CN1444258A (zh) 2003-09-24
CN100416777C true CN100416777C (zh) 2008-09-03

Family

ID=27787669

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031107850A Expired - Fee Related CN100416777C (zh) 2002-03-05 2003-03-05 在半导体应用的电沉积铜中缺陷的降低

Country Status (5)

Country Link
US (2) US7316772B2 (https=)
JP (1) JP5036954B2 (https=)
CN (1) CN100416777C (https=)
DE (1) DE10309085A1 (https=)
TW (1) TWI316976B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12374560B2 (en) 2022-07-29 2025-07-29 Innolux Corporation Method for manufacturing electronic device

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
DE10223957B4 (de) * 2002-05-31 2006-12-21 Advanced Micro Devices, Inc., Sunnyvale Ein verbessertes Verfahren zum Elektroplattieren von Kupfer auf einer strukturierten dielektrischen Schicht
JP2004346422A (ja) * 2003-05-23 2004-12-09 Rohm & Haas Electronic Materials Llc めっき方法
JP4973829B2 (ja) * 2004-07-23 2012-07-11 上村工業株式会社 電気銅めっき浴及び電気銅めっき方法
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
US7442634B2 (en) * 2004-12-21 2008-10-28 Intel Corporation Method for constructing contact formations
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization
TWI328622B (en) * 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds
JP4816901B2 (ja) * 2005-11-21 2011-11-16 上村工業株式会社 電気銅めっき浴
US20070158199A1 (en) * 2005-12-30 2007-07-12 Haight Scott M Method to modulate the surface roughness of a plated deposit and create fine-grained flat bumps
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
JP4932370B2 (ja) * 2006-07-28 2012-05-16 日本マクダーミッド株式会社 電解めっき方法、プリント配線板及び半導体ウェハー
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US7905994B2 (en) 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
JP2009228078A (ja) * 2008-03-24 2009-10-08 Fujitsu Ltd 電解メッキ液、電解メッキ方法、および半導体装置の製造方法
WO2011149965A2 (en) * 2010-05-24 2011-12-01 Enthone Inc. Copper filling of through silicon vias
US8388824B2 (en) 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
EP2199315B1 (en) 2008-12-19 2013-12-11 Basf Se Composition for metal electroplating comprising leveling agent
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
FR2949121A1 (fr) * 2009-08-12 2011-02-18 Alchimer Electrolyte et procede d''electrodeposition de cuivre sur une couche barriere, et substrat semi-conducteur obtenu par un tel procede.
EP2504396B1 (en) 2009-11-27 2021-02-24 Basf Se Composition for copper electroplating comprising leveling agent
EP2547731B1 (en) 2010-03-18 2014-07-30 Basf Se Composition for metal electroplating comprising leveling agent
EP2392692A1 (en) 2010-06-01 2011-12-07 Basf Se Composition for metal electroplating comprising leveling agent
SG185736A1 (en) * 2010-06-01 2012-12-28 Basf Se Composition for metal electroplating comprising leveling agent
EP2668317B1 (en) 2011-01-26 2017-08-23 MacDermid Enthone Inc. Process for filling vias in the microelectronics
KR101705734B1 (ko) * 2011-02-18 2017-02-14 삼성전자주식회사 구리 도금 용액 및 이것을 이용한 구리 도금 방법
US9418937B2 (en) 2011-12-09 2016-08-16 Infineon Technologies Ag Integrated circuit and method of forming an integrated circuit
US20140238868A1 (en) * 2013-02-25 2014-08-28 Dow Global Technologies Llc Electroplating bath
CN103397354B (zh) * 2013-08-08 2016-10-26 上海新阳半导体材料股份有限公司 一种用于减少硅通孔技术镀铜退火后空洞的添加剂
JP2017503929A (ja) 2013-11-25 2017-02-02 エンソン インコーポレイテッド 銅の電析
SG11201604646TA (en) * 2013-12-09 2016-07-28 Aveni Copper electrodeposition bath containing an electrochemically inert cation
TWI710671B (zh) 2014-09-15 2020-11-21 美商麥德美樂思公司 微電子技術中銅沈積用之平整劑
US9496326B1 (en) 2015-10-16 2016-11-15 International Business Machines Corporation High-density integrated circuit via capacitor
JP2017183707A (ja) * 2016-02-19 2017-10-05 インフィネオン テクノロジーズ アクチエンゲゼルシャフトＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＡＧ 電子デバイス基板およびその製造方法
JP7039601B2 (ja) 2016-09-22 2022-03-22 マクダーミッド エンソン インコーポレイテッド マイクロエレクトロニクスにおける銅電着
TWI887558B (zh) 2017-07-10 2025-06-21 美商應用材料股份有限公司 具有減少的夾帶空氣的電鍍系統
KR102445636B1 (ko) 2017-11-28 2022-09-22 솔브레인 주식회사 평탄화제 및 이를 포함하는 구리 도금 조성물
JP7553747B2 (ja) * 2022-08-31 2024-09-18 株式会社Jcu めっき液

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010046565A1 (en) * 1999-07-30 2001-11-29 Uzoh Cyprian E. Method to produce high quality metal fill in deep submicron vias and lines
US20020011416A1 (en) * 1999-01-11 2002-01-31 Applied Materials, Inc. Electrodeposition chemistry for filling of apertures with reflective metal
US6350687B1 (en) * 1999-03-18 2002-02-26 Advanced Micro Devices, Inc. Method of fabricating improved copper metallization including forming and removing passivation layer before forming capping film

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1248415B (de) * 1964-03-07 1967-08-24 Dehydag Gmbh Saure galvanische Kupferbaeder
SE322956B (https=) * 1966-08-20 1970-04-20 Schering Ag
ZA708430B (en) * 1970-02-12 1971-09-29 Udylite Corp Electrodeposition of copper from acidic baths
US3770598A (en) * 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US3956078A (en) * 1972-12-14 1976-05-11 M & T Chemicals Inc. Electrodeposition of copper
US4009087A (en) * 1974-11-21 1977-02-22 M&T Chemicals Inc. Electrodeposition of copper
AU496780B2 (en) * 1975-03-11 1978-10-26 Oxy Metal Industries Corporation Additives in baths forthe electrodeposition of copper
DE2610705C3 (de) 1976-03-13 1978-10-19 Henkel Kgaa, 4000 Duesseldorf Saure galvanische Kupferbäder
US4350183A (en) * 1980-05-19 1982-09-21 Raychem Corporation Heat-recoverable pipeline termination plug
US4387164A (en) * 1980-11-05 1983-06-07 Fmc Corporation Method and apparatus for chemical analysis using reactive reagents dispersed in soluble film
US4336114A (en) * 1981-03-26 1982-06-22 Hooker Chemicals & Plastics Corp. Electrodeposition of bright copper
US4376685A (en) * 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
US4555315A (en) * 1984-05-29 1985-11-26 Omi International Corporation High speed copper electroplating process and bath therefor
US5039487A (en) * 1987-12-22 1991-08-13 Board Of Regents, The University Of Texas System Methods for quantifying components in liquid samples
US5232575A (en) * 1990-07-26 1993-08-03 Mcgean-Rohco, Inc. Polymeric leveling additive for acid electroplating baths
IE76732B1 (en) * 1990-08-07 1997-11-05 Becton Dickinson Co One step test for absolute counts
JP3165484B2 (ja) 1991-10-29 2001-05-14 京セラ株式会社 液量センサ
JPH06141787A (ja) 1992-11-05 1994-05-24 Ajinomoto Co Inc 低吸油油ちょう食品
DE19653681C2 (de) * 1996-12-13 2000-04-06 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Kupferschichten mit gleichmäßiger Schichtdicke und guten optischen und metallphysikalischen Eigenschaften und Anwendung des Verfahrens
WO1998027585A1 (en) 1996-12-16 1998-06-25 International Business Machines Corporation Electroplated interconnection structures on integrated circuit chips
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
DE19758121C2 (de) * 1997-12-17 2000-04-06 Atotech Deutschland Gmbh Wäßriges Bad und Verfahren zum elektrolytischen Abscheiden von Kupferschichten
EP1126512A4 (en) * 1998-08-11 2007-10-17 Ebara Corp DEPOSIT METHOD AND APPARATUS FOR SEMICONDUCTED DISCS
JP2000080494A (ja) * 1998-09-03 2000-03-21 Ebara Corp 銅ダマシン配線用めっき液
WO2000014306A1 (fr) 1998-09-03 2000-03-16 Ebara Corporation Procede et dispositif de revetement de substrat
US6793796B2 (en) * 1998-10-26 2004-09-21 Novellus Systems, Inc. Electroplating process for avoiding defects in metal features of integrated circuit devices
US6123825A (en) * 1998-12-02 2000-09-26 International Business Machines Corporation Electromigration-resistant copper microstructure and process of making
JP2000297395A (ja) * 1999-04-15 2000-10-24 Japan Energy Corp 電気銅めっき液
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
US20060183328A1 (en) * 1999-05-17 2006-08-17 Barstad Leon R Electrolytic copper plating solutions
ATE497971T1 (de) * 1999-06-04 2011-02-15 Florian Kern Peptide zur vakzinierung gegen das humane cmv
JP2001073182A (ja) * 1999-07-15 2001-03-21 Boc Group Inc:The 改良された酸性銅電気メッキ用溶液
US6224737B1 (en) * 1999-08-19 2001-05-01 Taiwan Semiconductor Manufacturing Company Method for improvement of gap filling capability of electrochemical deposition of copper
US6673216B2 (en) * 1999-08-31 2004-01-06 Semitool, Inc. Apparatus for providing electrical and fluid communication to a rotating microelectronic workpiece during electrochemical processing
JP4394234B2 (ja) * 2000-01-20 2010-01-06 日鉱金属株式会社 銅電気めっき液及び銅電気めっき方法
JP2002004081A (ja) * 2000-06-16 2002-01-09 Learonal Japan Inc シリコンウエハーへの電気めっき方法
US6649038B2 (en) * 2000-10-13 2003-11-18 Shipley Company, L.L.C. Electroplating method
US6679983B2 (en) * 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper
US6682642B2 (en) * 2000-10-13 2004-01-27 Shipley Company, L.L.C. Seed repair and electroplating bath
US6660153B2 (en) * 2000-10-20 2003-12-09 Shipley Company, L.L.C. Seed layer repair bath
US20020090484A1 (en) * 2000-10-20 2002-07-11 Shipley Company, L.L.C. Plating bath
EP1203950B1 (en) * 2000-11-02 2005-09-07 Shipley Company LLC Plating bath analysis
US6797146B2 (en) * 2000-11-02 2004-09-28 Shipley Company, L.L.C. Seed layer repair
US20020127847A1 (en) * 2000-11-03 2002-09-12 Shipley Company, L.L.C. Electrochemical co-deposition of metals for electronic device manufacture
JP3967879B2 (ja) * 2000-11-16 2007-08-29 株式会社ルネサステクノロジ 銅めっき液及びそれを用いた半導体集積回路装置の製造方法
DE10100954A1 (de) * 2001-01-11 2002-07-18 Raschig Gmbh Verwendung von Polyolefinen mit basischen, aromatischen Substituenten als Hilfsmittel zur elektrolytischen Abscheidung von metallischen Schichten
JP2003183874A (ja) * 2001-12-18 2003-07-03 Morita Kagaku Kogyo Kk 銅薄膜の電解メッキ液
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
TWI328622B (en) * 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020011416A1 (en) * 1999-01-11 2002-01-31 Applied Materials, Inc. Electrodeposition chemistry for filling of apertures with reflective metal
US6350687B1 (en) * 1999-03-18 2002-02-26 Advanced Micro Devices, Inc. Method of fabricating improved copper metallization including forming and removing passivation layer before forming capping film
US20010046565A1 (en) * 1999-07-30 2001-11-29 Uzoh Cyprian E. Method to produce high quality metal fill in deep submicron vias and lines

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12374560B2 (en) 2022-07-29 2025-07-29 Innolux Corporation Method for manufacturing electronic device

Also Published As

Publication number Publication date
JP2004043957A (ja) 2004-02-12
US9222188B2 (en) 2015-12-29
US7316772B2 (en) 2008-01-08
US20080121527A1 (en) 2008-05-29
CN1444258A (zh) 2003-09-24
TWI316976B (en) 2009-11-11
JP5036954B2 (ja) 2012-09-26
US20030168343A1 (en) 2003-09-11
DE10309085A1 (de) 2003-12-11
TW200304966A (https=) 2003-10-16

Similar Documents

Publication Publication Date Title
CN100416777C (zh) 在半导体应用的电沉积铜中缺陷的降低
US6024856A (en) Copper metallization of silicon wafers using insoluble anodes
JP5504147B2 (ja) 電気めっき方法
US20050081744A1 (en) Electroplating compositions and methods for electroplating
US20040222100A1 (en) Process and system for providing electrochemical processing solution with reduced oxygen and gas content
US20060283716A1 (en) Method of direct plating of copper on a ruthenium alloy
US20070125657A1 (en) Method of direct plating of copper on a substrate structure
CN1137511C (zh) 生产集成电路时由高纯铜电镀形成导体结构的方法
US20050045486A1 (en) Plating method and plating solution
TWI541388B (zh) 電鍍方法
KR20080100223A (ko) 마이크로 전자공학에서의 구리 전착
US20050274622A1 (en) Plating chemistry and method of single-step electroplating of copper on a barrier metal
US6858123B1 (en) Galvanizing solution for the galvanic deposition of copper
US7429401B2 (en) Superconformal metal deposition using derivatized substrates
US20030188974A1 (en) Homogeneous copper-tin alloy plating for enhancement of electro-migration resistance in interconnects
US20040118699A1 (en) Homogeneous copper-palladium alloy plating for enhancement of electro-migration resistance in interconnects
US7544281B2 (en) Uniform current distribution for ECP loading of wafers
KR102889817B1 (ko) 나노 구리 결정입자 전기도금 방법
Dubin et al. Copper electroplating for Damascene ULSI interconnects
US20060054508A1 (en) Process for rendering metal corrosion-resistant in electrochemical metal deposition

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080903