TW200304966A - - Google Patents

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Publication number
TW200304966A
TW200304966A TW92104308A TW92104308A TW200304966A TW 200304966 A TW200304966 A TW 200304966A TW 92104308 A TW92104308 A TW 92104308A TW 92104308 A TW92104308 A TW 92104308A TW 200304966 A TW200304966 A TW 200304966A
Authority
TW
Taiwan
Prior art keywords
reducing agent
copper
patent application
defect reducing
concentrated solution
Prior art date
Application number
TW92104308A
Other languages
English (en)
Chinese (zh)
Other versions
TWI316976B (en
Inventor
John Commander
Richard Hutubise
Vincent Paneccasio
Xuan Lin
Kshama Jirage
Original Assignee
Enthone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enthone filed Critical Enthone
Publication of TW200304966A publication Critical patent/TW200304966A/zh
Application granted granted Critical
Publication of TWI316976B publication Critical patent/TWI316976B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW092104308A 2002-03-05 2003-02-27 Defect reduction in electrodeposited copper for semiconductor applications TWI316976B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/091,106 US7316772B2 (en) 2002-03-05 2002-03-05 Defect reduction in electrodeposited copper for semiconductor applications

Publications (2)

Publication Number Publication Date
TW200304966A true TW200304966A (https=) 2003-10-16
TWI316976B TWI316976B (en) 2009-11-11

Family

ID=27787669

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092104308A TWI316976B (en) 2002-03-05 2003-02-27 Defect reduction in electrodeposited copper for semiconductor applications

Country Status (5)

Country Link
US (2) US7316772B2 (https=)
JP (1) JP5036954B2 (https=)
CN (1) CN100416777C (https=)
DE (1) DE10309085A1 (https=)
TW (1) TWI316976B (https=)

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TWI572750B (zh) * 2010-05-24 2017-03-01 安頌股份有限公司 直通矽穿孔之銅充填

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JP7039601B2 (ja) 2016-09-22 2022-03-22 マクダーミッド エンソン インコーポレイテッド マイクロエレクトロニクスにおける銅電着
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI572750B (zh) * 2010-05-24 2017-03-01 安頌股份有限公司 直通矽穿孔之銅充填

Also Published As

Publication number Publication date
JP2004043957A (ja) 2004-02-12
US9222188B2 (en) 2015-12-29
CN100416777C (zh) 2008-09-03
US7316772B2 (en) 2008-01-08
US20080121527A1 (en) 2008-05-29
CN1444258A (zh) 2003-09-24
TWI316976B (en) 2009-11-11
JP5036954B2 (ja) 2012-09-26
US20030168343A1 (en) 2003-09-11
DE10309085A1 (de) 2003-12-11

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