JP5036954B2 - 半導体用途のための電着銅における欠陥の減少 - Google Patents

半導体用途のための電着銅における欠陥の減少 Download PDF

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Publication number
JP5036954B2
JP5036954B2 JP2003058866A JP2003058866A JP5036954B2 JP 5036954 B2 JP5036954 B2 JP 5036954B2 JP 2003058866 A JP2003058866 A JP 2003058866A JP 2003058866 A JP2003058866 A JP 2003058866A JP 5036954 B2 JP5036954 B2 JP 5036954B2
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Japan
Prior art keywords
copper
electroplating
integrated circuit
semiconductor integrated
circuit device
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Expired - Lifetime
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Japanese (ja)
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JP2004043957A (ja
JP2004043957A5 (https=
Inventor
コマンダー ジョン
ハーテュバイス リチャード
パネカッシオ ビンセント
リン ズアン
ジレージ カシャマ
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エンソン インコーポレイテッド
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/423Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003058866A 2002-03-05 2003-03-05 半導体用途のための電着銅における欠陥の減少 Expired - Lifetime JP5036954B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/091.106 2002-03-05
US10/091,106 US7316772B2 (en) 2002-03-05 2002-03-05 Defect reduction in electrodeposited copper for semiconductor applications

Publications (3)

Publication Number Publication Date
JP2004043957A JP2004043957A (ja) 2004-02-12
JP2004043957A5 JP2004043957A5 (https=) 2006-04-20
JP5036954B2 true JP5036954B2 (ja) 2012-09-26

Family

ID=27787669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003058866A Expired - Lifetime JP5036954B2 (ja) 2002-03-05 2003-03-05 半導体用途のための電着銅における欠陥の減少

Country Status (5)

Country Link
US (2) US7316772B2 (https=)
JP (1) JP5036954B2 (https=)
CN (1) CN100416777C (https=)
DE (1) DE10309085A1 (https=)
TW (1) TWI316976B (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) * 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
DE10223957B4 (de) * 2002-05-31 2006-12-21 Advanced Micro Devices, Inc., Sunnyvale Ein verbessertes Verfahren zum Elektroplattieren von Kupfer auf einer strukturierten dielektrischen Schicht
JP2004346422A (ja) * 2003-05-23 2004-12-09 Rohm & Haas Electronic Materials Llc めっき方法
JP4973829B2 (ja) * 2004-07-23 2012-07-11 上村工業株式会社 電気銅めっき浴及び電気銅めっき方法
TW200632147A (https=) * 2004-11-12 2006-09-16
US7442634B2 (en) * 2004-12-21 2008-10-28 Intel Corporation Method for constructing contact formations
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization
TWI328622B (en) 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds
JP4816901B2 (ja) * 2005-11-21 2011-11-16 上村工業株式会社 電気銅めっき浴
US20070158199A1 (en) * 2005-12-30 2007-07-12 Haight Scott M Method to modulate the surface roughness of a plated deposit and create fine-grained flat bumps
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
JP4932370B2 (ja) * 2006-07-28 2012-05-16 日本マクダーミッド株式会社 電解めっき方法、プリント配線板及び半導体ウェハー
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
JP2009228078A (ja) * 2008-03-24 2009-10-08 Fujitsu Ltd 電解メッキ液、電解メッキ方法、および半導体装置の製造方法
US8388824B2 (en) 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
US10221496B2 (en) 2008-11-26 2019-03-05 Macdermid Enthone Inc. Copper filling of through silicon vias
EP2199315B1 (en) 2008-12-19 2013-12-11 Basf Se Composition for metal electroplating comprising leveling agent
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
FR2949121A1 (fr) * 2009-08-12 2011-02-18 Alchimer Electrolyte et procede d''electrodeposition de cuivre sur une couche barriere, et substrat semi-conducteur obtenu par un tel procede.
RU2585184C2 (ru) 2009-11-27 2016-05-27 Басф Се Композиция для электрического осаждения металла, содержащая выравнивающий агент
US9834677B2 (en) 2010-03-18 2017-12-05 Basf Se Composition for metal electroplating comprising leveling agent
MY164464A (en) 2010-06-01 2017-12-15 Basf Se Composition for metal electroplating comprising leveling agent
EP2392692A1 (en) 2010-06-01 2011-12-07 Basf Se Composition for metal electroplating comprising leveling agent
JP5981455B2 (ja) 2011-01-26 2016-08-31 エンソン インコーポレイテッド マイクロ電子工業におけるビアホール充填方法
KR101705734B1 (ko) * 2011-02-18 2017-02-14 삼성전자주식회사 구리 도금 용액 및 이것을 이용한 구리 도금 방법
US9418937B2 (en) 2011-12-09 2016-08-16 Infineon Technologies Ag Integrated circuit and method of forming an integrated circuit
US20140238868A1 (en) * 2013-02-25 2014-08-28 Dow Global Technologies Llc Electroplating bath
CN103397354B (zh) * 2013-08-08 2016-10-26 上海新阳半导体材料股份有限公司 一种用于减少硅通孔技术镀铜退火后空洞的添加剂
WO2015077772A1 (en) 2013-11-25 2015-05-28 Enthone Inc. Electrodeposition of copper
JP6474410B2 (ja) * 2013-12-09 2019-02-27 アヴニ 電気化学的に不活性なカチオンを含む銅電着浴
TWI710671B (zh) 2014-09-15 2020-11-21 美商麥德美樂思公司 微電子技術中銅沈積用之平整劑
US9496326B1 (en) 2015-10-16 2016-11-15 International Business Machines Corporation High-density integrated circuit via capacitor
DE102017103310A1 (de) * 2016-02-19 2017-08-24 Infineon Technologies Ag Substrat einer elektronischen vorrichtung und verfahren zum herstellen desselben
EP3516096A4 (en) 2016-09-22 2020-10-21 MacDermid Enthone Inc. MICROELECTRONIC COPPER ELECTRODEPOSITION
TWI887558B (zh) * 2017-07-10 2025-06-21 美商應用材料股份有限公司 具有減少的夾帶空氣的電鍍系統
KR102445636B1 (ko) 2017-11-28 2022-09-22 솔브레인 주식회사 평탄화제 및 이를 포함하는 구리 도금 조성물
CN117528951A (zh) 2022-07-29 2024-02-06 群创光电股份有限公司 电子装置的制造方法
KR20250022205A (ko) * 2022-08-31 2025-02-14 가부시끼가이샤 제이씨유 도금액

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1248415B (de) * 1964-03-07 1967-08-24 Dehydag Gmbh Saure galvanische Kupferbaeder
SE322956B (https=) * 1966-08-20 1970-04-20 Schering Ag
ZA708430B (en) 1970-02-12 1971-09-29 Udylite Corp Electrodeposition of copper from acidic baths
US3770598A (en) * 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US3956078A (en) * 1972-12-14 1976-05-11 M & T Chemicals Inc. Electrodeposition of copper
US4009087A (en) * 1974-11-21 1977-02-22 M&T Chemicals Inc. Electrodeposition of copper
NL7510771A (nl) * 1975-03-11 1976-09-14 Oxy Metal Industries Corp Werkwijze voor het elektrolytisch neerslaan van koper uit waterige zure galvaniseerbaden.
DE2610705C3 (de) 1976-03-13 1978-10-19 Henkel Kgaa, 4000 Duesseldorf Saure galvanische Kupferbäder
US4350183A (en) * 1980-05-19 1982-09-21 Raychem Corporation Heat-recoverable pipeline termination plug
US4387164A (en) * 1980-11-05 1983-06-07 Fmc Corporation Method and apparatus for chemical analysis using reactive reagents dispersed in soluble film
US4336114A (en) 1981-03-26 1982-06-22 Hooker Chemicals & Plastics Corp. Electrodeposition of bright copper
US4376685A (en) 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
US4555315A (en) * 1984-05-29 1985-11-26 Omi International Corporation High speed copper electroplating process and bath therefor
US5039487A (en) * 1987-12-22 1991-08-13 Board Of Regents, The University Of Texas System Methods for quantifying components in liquid samples
US5232575A (en) * 1990-07-26 1993-08-03 Mcgean-Rohco, Inc. Polymeric leveling additive for acid electroplating baths
IE76732B1 (en) * 1990-08-07 1997-11-05 Becton Dickinson Co One step test for absolute counts
JP3165484B2 (ja) 1991-10-29 2001-05-14 京セラ株式会社 液量センサ
JPH06141787A (ja) 1992-11-05 1994-05-24 Ajinomoto Co Inc 低吸油油ちょう食品
DE19653681C2 (de) 1996-12-13 2000-04-06 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Kupferschichten mit gleichmäßiger Schichtdicke und guten optischen und metallphysikalischen Eigenschaften und Anwendung des Verfahrens
WO1998027585A1 (en) 1996-12-16 1998-06-25 International Business Machines Corporation Electroplated interconnection structures on integrated circuit chips
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
DE19758121C2 (de) 1997-12-17 2000-04-06 Atotech Deutschland Gmbh Wäßriges Bad und Verfahren zum elektrolytischen Abscheiden von Kupferschichten
US7033463B1 (en) * 1998-08-11 2006-04-25 Ebara Corporation Substrate plating method and apparatus
KR100656581B1 (ko) 1998-09-03 2006-12-12 가부시키가이샤 에바라 세이사꾸쇼 기판의 도금방법 및 장치
JP2000080494A (ja) * 1998-09-03 2000-03-21 Ebara Corp 銅ダマシン配線用めっき液
US6793796B2 (en) * 1998-10-26 2004-09-21 Novellus Systems, Inc. Electroplating process for avoiding defects in metal features of integrated circuit devices
US6123825A (en) * 1998-12-02 2000-09-26 International Business Machines Corporation Electromigration-resistant copper microstructure and process of making
US6544399B1 (en) * 1999-01-11 2003-04-08 Applied Materials, Inc. Electrodeposition chemistry for filling apertures with reflective metal
US6350687B1 (en) * 1999-03-18 2002-02-26 Advanced Micro Devices, Inc. Method of fabricating improved copper metallization including forming and removing passivation layer before forming capping film
JP2000297395A (ja) * 1999-04-15 2000-10-24 Japan Energy Corp 電気銅めっき液
US20060183328A1 (en) * 1999-05-17 2006-08-17 Barstad Leon R Electrolytic copper plating solutions
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
DE50016068D1 (de) * 1999-06-04 2011-03-24 Florian Kern Peptide zur vakzinierung gegen das humane cmv
JP2001073182A (ja) * 1999-07-15 2001-03-21 Boc Group Inc:The 改良された酸性銅電気メッキ用溶液
US6258717B1 (en) * 1999-07-30 2001-07-10 International Business Machines Corporation Method to produce high quality metal fill in deep submicron vias and lines
US6224737B1 (en) * 1999-08-19 2001-05-01 Taiwan Semiconductor Manufacturing Company Method for improvement of gap filling capability of electrochemical deposition of copper
US6673216B2 (en) * 1999-08-31 2004-01-06 Semitool, Inc. Apparatus for providing electrical and fluid communication to a rotating microelectronic workpiece during electrochemical processing
JP4394234B2 (ja) * 2000-01-20 2010-01-06 日鉱金属株式会社 銅電気めっき液及び銅電気めっき方法
JP2002004081A (ja) * 2000-06-16 2002-01-09 Learonal Japan Inc シリコンウエハーへの電気めっき方法
US6649038B2 (en) 2000-10-13 2003-11-18 Shipley Company, L.L.C. Electroplating method
US6679983B2 (en) 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper
EP1197587B1 (en) 2000-10-13 2006-09-20 Shipley Co. L.L.C. Seed layer repair and electroplating bath
US20020090484A1 (en) 2000-10-20 2002-07-11 Shipley Company, L.L.C. Plating bath
US6660153B2 (en) 2000-10-20 2003-12-09 Shipley Company, L.L.C. Seed layer repair bath
DE60113214T2 (de) * 2000-11-02 2006-06-08 Shipley Co., L.L.C., Marlborough Plattierungsbadanalyse
US6797146B2 (en) 2000-11-02 2004-09-28 Shipley Company, L.L.C. Seed layer repair
JP2004518022A (ja) 2000-11-03 2004-06-17 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 電子デバイス製造のための金属の電気化学的共析出
JP3967879B2 (ja) * 2000-11-16 2007-08-29 株式会社ルネサステクノロジ 銅めっき液及びそれを用いた半導体集積回路装置の製造方法
DE10100954A1 (de) * 2001-01-11 2002-07-18 Raschig Gmbh Verwendung von Polyolefinen mit basischen, aromatischen Substituenten als Hilfsmittel zur elektrolytischen Abscheidung von metallischen Schichten
JP2003183874A (ja) * 2001-12-18 2003-07-03 Morita Kagaku Kogyo Kk 銅薄膜の電解メッキ液
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
TWI328622B (en) * 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds

Also Published As

Publication number Publication date
US9222188B2 (en) 2015-12-29
TWI316976B (en) 2009-11-11
TW200304966A (https=) 2003-10-16
CN100416777C (zh) 2008-09-03
US20080121527A1 (en) 2008-05-29
JP2004043957A (ja) 2004-02-12
US7316772B2 (en) 2008-01-08
US20030168343A1 (en) 2003-09-11
CN1444258A (zh) 2003-09-24
DE10309085A1 (de) 2003-12-11

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