JP2004043957A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2004043957A5 JP2004043957A5 JP2003058866A JP2003058866A JP2004043957A5 JP 2004043957 A5 JP2004043957 A5 JP 2004043957A5 JP 2003058866 A JP2003058866 A JP 2003058866A JP 2003058866 A JP2003058866 A JP 2003058866A JP 2004043957 A5 JP2004043957 A5 JP 2004043957A5
- Authority
- JP
- Japan
- Prior art keywords
- reducing agent
- defect reducing
- copper
- reaction product
- polyethyleneimine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007547 defect Effects 0.000 description 39
- 239000003638 chemical reducing agent Substances 0.000 description 38
- 238000000034 method Methods 0.000 description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 27
- 229910052802 copper Inorganic materials 0.000 description 27
- 239000010949 copper Substances 0.000 description 27
- 229920002873 Polyethylenimine Polymers 0.000 description 21
- 239000007795 chemical reaction product Substances 0.000 description 18
- 238000009713 electroplating Methods 0.000 description 17
- 229920002006 poly(N-vinylimidazole) polymer Polymers 0.000 description 15
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 14
- KCXMKQUNVWSEMD-UHFFFAOYSA-N benzyl chloride Chemical compound ClCC1=CC=CC=C1 KCXMKQUNVWSEMD-UHFFFAOYSA-N 0.000 description 14
- 229940073608 benzyl chloride Drugs 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 239000012141 concentrate Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 13
- 150000003839 salts Chemical group 0.000 description 11
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 229910052801 chlorine Inorganic materials 0.000 description 8
- XMWGTKZEDLCVIG-UHFFFAOYSA-N 1-(chloromethyl)naphthalene Chemical compound C1=CC=C2C(CCl)=CC=CC2=C1 XMWGTKZEDLCVIG-UHFFFAOYSA-N 0.000 description 7
- 125000001931 aliphatic group Chemical group 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 229920000768 polyamine Polymers 0.000 description 7
- 229920002717 polyvinylpyridine Polymers 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 239000011593 sulfur Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- -1 nitrogen-containing heterocyclic compound Chemical class 0.000 description 4
- 150000002391 heterocyclic compounds Chemical class 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/091,106 US7316772B2 (en) | 2002-03-05 | 2002-03-05 | Defect reduction in electrodeposited copper for semiconductor applications |
| US10/091.106 | 2002-03-05 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004043957A JP2004043957A (ja) | 2004-02-12 |
| JP2004043957A5 true JP2004043957A5 (https=) | 2006-04-20 |
| JP5036954B2 JP5036954B2 (ja) | 2012-09-26 |
Family
ID=27787669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003058866A Expired - Lifetime JP5036954B2 (ja) | 2002-03-05 | 2003-03-05 | 半導体用途のための電着銅における欠陥の減少 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7316772B2 (https=) |
| JP (1) | JP5036954B2 (https=) |
| CN (1) | CN100416777C (https=) |
| DE (1) | DE10309085A1 (https=) |
| TW (1) | TWI316976B (https=) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8002962B2 (en) | 2002-03-05 | 2011-08-23 | Enthone Inc. | Copper electrodeposition in microelectronics |
| US7316772B2 (en) * | 2002-03-05 | 2008-01-08 | Enthone Inc. | Defect reduction in electrodeposited copper for semiconductor applications |
| DE10223957B4 (de) * | 2002-05-31 | 2006-12-21 | Advanced Micro Devices, Inc., Sunnyvale | Ein verbessertes Verfahren zum Elektroplattieren von Kupfer auf einer strukturierten dielektrischen Schicht |
| JP2004346422A (ja) * | 2003-05-23 | 2004-12-09 | Rohm & Haas Electronic Materials Llc | めっき方法 |
| JP4973829B2 (ja) * | 2004-07-23 | 2012-07-11 | 上村工業株式会社 | 電気銅めっき浴及び電気銅めっき方法 |
| TWI400365B (zh) | 2004-11-12 | 2013-07-01 | 安頌股份有限公司 | 微電子裝置上的銅電沈積 |
| US7442634B2 (en) * | 2004-12-21 | 2008-10-28 | Intel Corporation | Method for constructing contact formations |
| US7311856B2 (en) * | 2005-03-30 | 2007-12-25 | Cabot Microelectronics Corporation | Polymeric inhibitors for enhanced planarization |
| TWI328622B (en) * | 2005-09-30 | 2010-08-11 | Rohm & Haas Elect Mat | Leveler compounds |
| JP4816901B2 (ja) * | 2005-11-21 | 2011-11-16 | 上村工業株式会社 | 電気銅めっき浴 |
| US20070158199A1 (en) * | 2005-12-30 | 2007-07-12 | Haight Scott M | Method to modulate the surface roughness of a plated deposit and create fine-grained flat bumps |
| US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
| JP4932370B2 (ja) * | 2006-07-28 | 2012-05-16 | 日本マクダーミッド株式会社 | 電解めっき方法、プリント配線板及び半導体ウェハー |
| TWI341554B (en) * | 2007-08-02 | 2011-05-01 | Enthone | Copper metallization of through silicon via |
| US7905994B2 (en) | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
| US20090188553A1 (en) * | 2008-01-25 | 2009-07-30 | Emat Technology, Llc | Methods of fabricating solar-cell structures and resulting solar-cell structures |
| JP2009228078A (ja) * | 2008-03-24 | 2009-10-08 | Fujitsu Ltd | 電解メッキ液、電解メッキ方法、および半導体装置の製造方法 |
| WO2011149965A2 (en) * | 2010-05-24 | 2011-12-01 | Enthone Inc. | Copper filling of through silicon vias |
| US8388824B2 (en) | 2008-11-26 | 2013-03-05 | Enthone Inc. | Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers |
| EP2199315B1 (en) | 2008-12-19 | 2013-12-11 | Basf Se | Composition for metal electroplating comprising leveling agent |
| US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
| FR2949121A1 (fr) * | 2009-08-12 | 2011-02-18 | Alchimer | Electrolyte et procede d''electrodeposition de cuivre sur une couche barriere, et substrat semi-conducteur obtenu par un tel procede. |
| EP2504396B1 (en) | 2009-11-27 | 2021-02-24 | Basf Se | Composition for copper electroplating comprising leveling agent |
| EP2547731B1 (en) | 2010-03-18 | 2014-07-30 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2392692A1 (en) | 2010-06-01 | 2011-12-07 | Basf Se | Composition for metal electroplating comprising leveling agent |
| SG185736A1 (en) * | 2010-06-01 | 2012-12-28 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2668317B1 (en) | 2011-01-26 | 2017-08-23 | MacDermid Enthone Inc. | Process for filling vias in the microelectronics |
| KR101705734B1 (ko) * | 2011-02-18 | 2017-02-14 | 삼성전자주식회사 | 구리 도금 용액 및 이것을 이용한 구리 도금 방법 |
| US9418937B2 (en) | 2011-12-09 | 2016-08-16 | Infineon Technologies Ag | Integrated circuit and method of forming an integrated circuit |
| US20140238868A1 (en) * | 2013-02-25 | 2014-08-28 | Dow Global Technologies Llc | Electroplating bath |
| CN103397354B (zh) * | 2013-08-08 | 2016-10-26 | 上海新阳半导体材料股份有限公司 | 一种用于减少硅通孔技术镀铜退火后空洞的添加剂 |
| JP2017503929A (ja) | 2013-11-25 | 2017-02-02 | エンソン インコーポレイテッド | 銅の電析 |
| SG11201604646TA (en) * | 2013-12-09 | 2016-07-28 | Aveni | Copper electrodeposition bath containing an electrochemically inert cation |
| TWI710671B (zh) | 2014-09-15 | 2020-11-21 | 美商麥德美樂思公司 | 微電子技術中銅沈積用之平整劑 |
| US9496326B1 (en) | 2015-10-16 | 2016-11-15 | International Business Machines Corporation | High-density integrated circuit via capacitor |
| JP2017183707A (ja) * | 2016-02-19 | 2017-10-05 | インフィネオン テクノロジーズ アクチエンゲゼルシャフトInfineon Technologies AG | 電子デバイス基板およびその製造方法 |
| JP7039601B2 (ja) | 2016-09-22 | 2022-03-22 | マクダーミッド エンソン インコーポレイテッド | マイクロエレクトロニクスにおける銅電着 |
| TWI887558B (zh) | 2017-07-10 | 2025-06-21 | 美商應用材料股份有限公司 | 具有減少的夾帶空氣的電鍍系統 |
| KR102445636B1 (ko) | 2017-11-28 | 2022-09-22 | 솔브레인 주식회사 | 평탄화제 및 이를 포함하는 구리 도금 조성물 |
| CN117528951A (zh) | 2022-07-29 | 2024-02-06 | 群创光电股份有限公司 | 电子装置的制造方法 |
| JP7553747B2 (ja) * | 2022-08-31 | 2024-09-18 | 株式会社Jcu | めっき液 |
Family Cites Families (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1248415B (de) * | 1964-03-07 | 1967-08-24 | Dehydag Gmbh | Saure galvanische Kupferbaeder |
| SE322956B (https=) * | 1966-08-20 | 1970-04-20 | Schering Ag | |
| ZA708430B (en) * | 1970-02-12 | 1971-09-29 | Udylite Corp | Electrodeposition of copper from acidic baths |
| US3770598A (en) * | 1972-01-21 | 1973-11-06 | Oxy Metal Finishing Corp | Electrodeposition of copper from acid baths |
| US3956078A (en) * | 1972-12-14 | 1976-05-11 | M & T Chemicals Inc. | Electrodeposition of copper |
| US4009087A (en) * | 1974-11-21 | 1977-02-22 | M&T Chemicals Inc. | Electrodeposition of copper |
| AU496780B2 (en) * | 1975-03-11 | 1978-10-26 | Oxy Metal Industries Corporation | Additives in baths forthe electrodeposition of copper |
| DE2610705C3 (de) | 1976-03-13 | 1978-10-19 | Henkel Kgaa, 4000 Duesseldorf | Saure galvanische Kupferbäder |
| US4350183A (en) * | 1980-05-19 | 1982-09-21 | Raychem Corporation | Heat-recoverable pipeline termination plug |
| US4387164A (en) * | 1980-11-05 | 1983-06-07 | Fmc Corporation | Method and apparatus for chemical analysis using reactive reagents dispersed in soluble film |
| US4336114A (en) * | 1981-03-26 | 1982-06-22 | Hooker Chemicals & Plastics Corp. | Electrodeposition of bright copper |
| US4376685A (en) * | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
| US4555315A (en) * | 1984-05-29 | 1985-11-26 | Omi International Corporation | High speed copper electroplating process and bath therefor |
| US5039487A (en) * | 1987-12-22 | 1991-08-13 | Board Of Regents, The University Of Texas System | Methods for quantifying components in liquid samples |
| US5232575A (en) * | 1990-07-26 | 1993-08-03 | Mcgean-Rohco, Inc. | Polymeric leveling additive for acid electroplating baths |
| IE76732B1 (en) * | 1990-08-07 | 1997-11-05 | Becton Dickinson Co | One step test for absolute counts |
| JP3165484B2 (ja) | 1991-10-29 | 2001-05-14 | 京セラ株式会社 | 液量センサ |
| JPH06141787A (ja) | 1992-11-05 | 1994-05-24 | Ajinomoto Co Inc | 低吸油油ちょう食品 |
| DE19653681C2 (de) * | 1996-12-13 | 2000-04-06 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Kupferschichten mit gleichmäßiger Schichtdicke und guten optischen und metallphysikalischen Eigenschaften und Anwendung des Verfahrens |
| WO1998027585A1 (en) | 1996-12-16 | 1998-06-25 | International Business Machines Corporation | Electroplated interconnection structures on integrated circuit chips |
| US5972192A (en) * | 1997-07-23 | 1999-10-26 | Advanced Micro Devices, Inc. | Pulse electroplating copper or copper alloys |
| DE19758121C2 (de) * | 1997-12-17 | 2000-04-06 | Atotech Deutschland Gmbh | Wäßriges Bad und Verfahren zum elektrolytischen Abscheiden von Kupferschichten |
| EP1126512A4 (en) * | 1998-08-11 | 2007-10-17 | Ebara Corp | DEPOSIT METHOD AND APPARATUS FOR SEMICONDUCTED DISCS |
| JP2000080494A (ja) * | 1998-09-03 | 2000-03-21 | Ebara Corp | 銅ダマシン配線用めっき液 |
| WO2000014306A1 (fr) | 1998-09-03 | 2000-03-16 | Ebara Corporation | Procede et dispositif de revetement de substrat |
| US6793796B2 (en) * | 1998-10-26 | 2004-09-21 | Novellus Systems, Inc. | Electroplating process for avoiding defects in metal features of integrated circuit devices |
| US6123825A (en) * | 1998-12-02 | 2000-09-26 | International Business Machines Corporation | Electromigration-resistant copper microstructure and process of making |
| US6544399B1 (en) * | 1999-01-11 | 2003-04-08 | Applied Materials, Inc. | Electrodeposition chemistry for filling apertures with reflective metal |
| US6350687B1 (en) * | 1999-03-18 | 2002-02-26 | Advanced Micro Devices, Inc. | Method of fabricating improved copper metallization including forming and removing passivation layer before forming capping film |
| JP2000297395A (ja) * | 1999-04-15 | 2000-10-24 | Japan Energy Corp | 電気銅めっき液 |
| US6444110B2 (en) * | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| US20060183328A1 (en) * | 1999-05-17 | 2006-08-17 | Barstad Leon R | Electrolytic copper plating solutions |
| ATE497971T1 (de) * | 1999-06-04 | 2011-02-15 | Florian Kern | Peptide zur vakzinierung gegen das humane cmv |
| JP2001073182A (ja) * | 1999-07-15 | 2001-03-21 | Boc Group Inc:The | 改良された酸性銅電気メッキ用溶液 |
| US6258717B1 (en) * | 1999-07-30 | 2001-07-10 | International Business Machines Corporation | Method to produce high quality metal fill in deep submicron vias and lines |
| US6224737B1 (en) * | 1999-08-19 | 2001-05-01 | Taiwan Semiconductor Manufacturing Company | Method for improvement of gap filling capability of electrochemical deposition of copper |
| US6673216B2 (en) * | 1999-08-31 | 2004-01-06 | Semitool, Inc. | Apparatus for providing electrical and fluid communication to a rotating microelectronic workpiece during electrochemical processing |
| JP4394234B2 (ja) * | 2000-01-20 | 2010-01-06 | 日鉱金属株式会社 | 銅電気めっき液及び銅電気めっき方法 |
| JP2002004081A (ja) * | 2000-06-16 | 2002-01-09 | Learonal Japan Inc | シリコンウエハーへの電気めっき方法 |
| US6649038B2 (en) * | 2000-10-13 | 2003-11-18 | Shipley Company, L.L.C. | Electroplating method |
| US6679983B2 (en) * | 2000-10-13 | 2004-01-20 | Shipley Company, L.L.C. | Method of electrodepositing copper |
| US6682642B2 (en) * | 2000-10-13 | 2004-01-27 | Shipley Company, L.L.C. | Seed repair and electroplating bath |
| US6660153B2 (en) * | 2000-10-20 | 2003-12-09 | Shipley Company, L.L.C. | Seed layer repair bath |
| US20020090484A1 (en) * | 2000-10-20 | 2002-07-11 | Shipley Company, L.L.C. | Plating bath |
| EP1203950B1 (en) * | 2000-11-02 | 2005-09-07 | Shipley Company LLC | Plating bath analysis |
| US6797146B2 (en) * | 2000-11-02 | 2004-09-28 | Shipley Company, L.L.C. | Seed layer repair |
| US20020127847A1 (en) * | 2000-11-03 | 2002-09-12 | Shipley Company, L.L.C. | Electrochemical co-deposition of metals for electronic device manufacture |
| JP3967879B2 (ja) * | 2000-11-16 | 2007-08-29 | 株式会社ルネサステクノロジ | 銅めっき液及びそれを用いた半導体集積回路装置の製造方法 |
| DE10100954A1 (de) * | 2001-01-11 | 2002-07-18 | Raschig Gmbh | Verwendung von Polyolefinen mit basischen, aromatischen Substituenten als Hilfsmittel zur elektrolytischen Abscheidung von metallischen Schichten |
| JP2003183874A (ja) * | 2001-12-18 | 2003-07-03 | Morita Kagaku Kogyo Kk | 銅薄膜の電解メッキ液 |
| US7316772B2 (en) * | 2002-03-05 | 2008-01-08 | Enthone Inc. | Defect reduction in electrodeposited copper for semiconductor applications |
| TWI328622B (en) * | 2005-09-30 | 2010-08-11 | Rohm & Haas Elect Mat | Leveler compounds |
-
2002
- 2002-03-05 US US10/091,106 patent/US7316772B2/en not_active Expired - Lifetime
-
2003
- 2003-02-27 TW TW092104308A patent/TWI316976B/zh not_active IP Right Cessation
- 2003-03-03 DE DE10309085A patent/DE10309085A1/de not_active Withdrawn
- 2003-03-05 CN CNB031107850A patent/CN100416777C/zh not_active Expired - Fee Related
- 2003-03-05 JP JP2003058866A patent/JP5036954B2/ja not_active Expired - Lifetime
-
2008
- 2008-01-08 US US11/971,061 patent/US9222188B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2004043957A5 (https=) | ||
| TWI400365B (zh) | 微電子裝置上的銅電沈積 | |
| CN106245073B (zh) | 用金属电化学填充高纵横比的大型凹入特征的方法、水溶液电镀槽溶液、电镀设备以及系统 | |
| US6824665B2 (en) | Seed layer deposition | |
| CN100526517C (zh) | 电镀液 | |
| JP5346215B2 (ja) | 半導体デバイスの製造において直接銅めっきし、かつ充填して相互配線を形成するための方法及び組成物 | |
| CN113260739A (zh) | 纳米孪晶铜结构的电沉积 | |
| US20060079085A1 (en) | Method for applying metal features onto metallized layers using electrochemical deposition | |
| KR102206291B1 (ko) | 구리를 장벽 층 상에 전기도금하기 위한 전해질 및 프로세스 | |
| JP2004043957A (ja) | 半導体用途のための電着銅における欠陥の減少 | |
| US20050045486A1 (en) | Plating method and plating solution | |
| KR102382665B1 (ko) | 마이크로전자장치에서의 구리 전착 | |
| US20110180412A1 (en) | Plating method and plating apparatus | |
| US10883185B2 (en) | Copper electrodeposition solution and process for high aspect ratio patterns | |
| JP3939124B2 (ja) | 配線形成方法 | |
| JP4416979B2 (ja) | 銅電気メッキに用いるメッキ溶液 | |
| CN113195794A (zh) | 包含用于无空隙亚微米特征填充的添加剂的用于镀钴的组合物 | |
| JP2002275639A (ja) | シード層堆積 | |
| US20040118699A1 (en) | Homogeneous copper-palladium alloy plating for enhancement of electro-migration resistance in interconnects | |
| HK40105683A (zh) | 在微电子件中的铜的电沉积 | |
| Kim et al. | Electroless deposition of Cu and Ag for ULSI interconnect fabrication | |
| JP2002266096A (ja) | シード層修復浴 |