DE102015114904B4 - Halbleitervorrichtungsstrukturen und Verfahren zum Ausbilden einer Halbleitervorrichtungsstruktur - Google Patents

Halbleitervorrichtungsstrukturen und Verfahren zum Ausbilden einer Halbleitervorrichtungsstruktur Download PDF

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DE102015114904B4
DE102015114904B4 DE102015114904.4A DE102015114904A DE102015114904B4 DE 102015114904 B4 DE102015114904 B4 DE 102015114904B4 DE 102015114904 A DE102015114904 A DE 102015114904A DE 102015114904 B4 DE102015114904 B4 DE 102015114904B4
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gate stack
protective element
semiconductor device
metal gate
over
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DE102015114904A1 (de
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Che-Cheng Chang
Chih-Han Lin
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
DE102015114904.4A 2015-06-15 2015-09-06 Halbleitervorrichtungsstrukturen und Verfahren zum Ausbilden einer Halbleitervorrichtungsstruktur Active DE102015114904B4 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201562175816P 2015-06-15 2015-06-15
US62/175,816 2015-06-15
US14/743,768 US9450099B1 (en) 2015-06-18 2015-06-18 Structure and formation method of semiconductor device structure
US14/743,768 2015-06-18
US14/827,092 2015-08-14
US14/827,092 US9614089B2 (en) 2015-06-15 2015-08-14 Structure and formation method of semiconductor device structure

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DE102015114904A1 DE102015114904A1 (de) 2016-12-15
DE102015114904B4 true DE102015114904B4 (de) 2020-06-18

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US (5) US9614089B2 (zh)
KR (1) KR101782218B1 (zh)
CN (1) CN106252411A (zh)
DE (1) DE102015114904B4 (zh)
TW (1) TWI575662B (zh)

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KR102432866B1 (ko) * 2017-11-29 2022-08-17 삼성전자주식회사 반도체 소자 및 그 제조 방법
US10685872B2 (en) * 2018-05-30 2020-06-16 International Business Machines Corporation Electrically isolated contacts in an active region of a semiconductor device
CN112018036A (zh) * 2019-05-30 2020-12-01 台湾积体电路制造股份有限公司 半导体装置结构的制造方法
US11282934B2 (en) * 2019-07-26 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Structure for metal gate electrode and method of fabrication
DE102020114867A1 (de) 2020-01-29 2021-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und verfahren
US11430865B2 (en) 2020-01-29 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11398384B2 (en) * 2020-02-11 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacer
US11108388B1 (en) 2020-03-02 2021-08-31 Shanghai Hestia Power, Inc. Silicon carbide power device, driving circuit and control method
US11742404B2 (en) * 2020-04-29 2023-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
CN113140514A (zh) * 2020-04-29 2021-07-20 台湾积体电路制造股份有限公司 半导体装置与其制作方法

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US20160365449A1 (en) 2016-12-15
US11515422B2 (en) 2022-11-29
US9614089B2 (en) 2017-04-04
US20210036157A1 (en) 2021-02-04
US20180358466A1 (en) 2018-12-13
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US10811538B2 (en) 2020-10-20
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US10032916B2 (en) 2018-07-24
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US10483398B2 (en) 2019-11-19
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