CN1985374B - 改进的应变硅cmos器件和方法 - Google Patents

改进的应变硅cmos器件和方法 Download PDF

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Publication number
CN1985374B
CN1985374B CN2005800130288A CN200580013028A CN1985374B CN 1985374 B CN1985374 B CN 1985374B CN 2005800130288 A CN2005800130288 A CN 2005800130288A CN 200580013028 A CN200580013028 A CN 200580013028A CN 1985374 B CN1985374 B CN 1985374B
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strain
semiconductor
area
compression
semiconductor layer
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Chinese (zh)
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CN1985374A (zh
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安德列斯·布尔扬特
欧阳齐庆
科恩·利姆
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2005800130288A 2004-06-24 2005-04-07 改进的应变硅cmos器件和方法 Expired - Fee Related CN1985374B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US58267804P 2004-06-24 2004-06-24
US60/582,678 2004-06-24
US10/930,404 2004-08-31
US10/930,404 US7227205B2 (en) 2004-06-24 2004-08-31 Strained-silicon CMOS device and method
PCT/US2005/011661 WO2006006972A1 (en) 2004-06-24 2005-04-07 Improved strained-silicon cmos device and method

Publications (2)

Publication Number Publication Date
CN1985374A CN1985374A (zh) 2007-06-20
CN1985374B true CN1985374B (zh) 2011-03-16

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CN2005800130288A Expired - Fee Related CN1985374B (zh) 2004-06-24 2005-04-07 改进的应变硅cmos器件和方法

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US (1) US7227205B2 (enExample)
EP (1) EP1790012B1 (enExample)
JP (1) JP2008504677A (enExample)
CN (1) CN1985374B (enExample)
WO (1) WO2006006972A1 (enExample)

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US20050285187A1 (en) 2005-12-29
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