JP5096681B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5096681B2 JP5096681B2 JP2006043418A JP2006043418A JP5096681B2 JP 5096681 B2 JP5096681 B2 JP 5096681B2 JP 2006043418 A JP2006043418 A JP 2006043418A JP 2006043418 A JP2006043418 A JP 2006043418A JP 5096681 B2 JP5096681 B2 JP 5096681B2
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- Prior art keywords
- layer
- semiconductor device
- silicon
- element isolation
- isolation region
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000010410 layer Substances 0.000 claims description 142
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 128
- 229910052710 silicon Inorganic materials 0.000 claims description 128
- 239000010703 silicon Substances 0.000 claims description 128
- 238000002955 isolation Methods 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 17
- 230000005669 field effect Effects 0.000 claims description 13
- 239000002344 surface layer Substances 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 16
- 239000013078 crystal Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Description
図1は、本発明による半導体装置の第1実施形態を示す断面図である。半導体装置1は、シリコン基板10、歪み付与層20、シリコン層30、FET40、および素子分離領域50を備えている。
(a)シリコン基板10上に、FET40が形成される領域を包囲するように素子分離領域50を形成する工程
(b)素子分離領域50が形成されたシリコン基板10上に歪み付与層20をエピタキシャル成長させる工程
(c)歪み付与層20上に、シリコン層30をエピタキシャル成長させる工程
(d)シリコン層30中に、ソース・ドレイン領域42が歪み付与層20と離間するようにFET40を形成する工程
図4は、本発明による半導体装置の第2実施形態を示す断面図である。半導体装置2は、シリコン基板10、歪み付与層20、シリコン層30、FET40、および素子分離領域50を備えている。シリコン基板10、歪み付与層20、シリコン層30およびFET40の構成は、半導体装置1におけるものと同様である。
2 半導体装置
10 シリコン基板
10a シリコン基板
20 歪み付与層
30 シリコン層
40 FET
42 ソース・ドレイン領域
43 SD extension領域
44 ゲート電極
46 サイドウォール
50 素子分離領域
50a 絶縁膜
Claims (1)
- 電界効果トランジスタを備える半導体装置を製造する方法であって、
第1シリコン基板上に、前記電界効果トランジスタが形成される領域を包囲するように素子分離領域を形成する工程と、
前記素子分離領域が形成された前記第1シリコン基板上に歪み付与層をエピタキシャル成長させる工程と、
前記歪み付与層上に、シリコン層をエピタキシャル成長させる工程と、
前記シリコン層中に、ソース・ドレイン領域が前記歪み付与層と離間するように前記電界効果トランジスタを形成する工程と、を含み、
前記歪み付与層は、前記シリコン層中の前記電界効果トランジスタのチャネル部に格子歪みを生じさせるものであり、
前記素子分離領域を形成する工程においては、第2シリコン基板中に前記素子分離領域を形成した後、前記第2シリコン基板を表層側から薄化して前記第1シリコン基板を形成する半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006043418A JP5096681B2 (ja) | 2006-02-21 | 2006-02-21 | 半導体装置の製造方法 |
TW096106070A TWI353055B (en) | 2006-02-21 | 2007-02-16 | Semiconductor manufacturing method |
US11/708,068 US20070194389A1 (en) | 2006-02-21 | 2007-02-20 | Semiconductor device and method of manufacturing the same |
CN2007100058110A CN101079445B (zh) | 2006-02-21 | 2007-02-25 | 半导体器件及其制造方法 |
US12/285,414 US7642151B2 (en) | 2006-02-21 | 2008-10-03 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006043418A JP5096681B2 (ja) | 2006-02-21 | 2006-02-21 | 半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012182978A Division JP5695614B2 (ja) | 2012-08-22 | 2012-08-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007227421A JP2007227421A (ja) | 2007-09-06 |
JP5096681B2 true JP5096681B2 (ja) | 2012-12-12 |
Family
ID=38427327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006043418A Expired - Fee Related JP5096681B2 (ja) | 2006-02-21 | 2006-02-21 | 半導体装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US20070194389A1 (ja) |
JP (1) | JP5096681B2 (ja) |
CN (1) | CN101079445B (ja) |
TW (1) | TWI353055B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100902105B1 (ko) | 2007-11-09 | 2009-06-09 | 주식회사 하이닉스반도체 | 반도체 소자의 트랜지스터 및 그 제조 방법 |
US8828840B2 (en) | 2011-01-12 | 2014-09-09 | Chinese Academy of Sciences, Institute of Microelectronics | Semiconductor device and method for manufacturing the same |
CN102592966B (zh) * | 2011-01-12 | 2015-07-15 | 中国科学院微电子研究所 | 半导体器件及其制作方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09219443A (ja) * | 1996-02-09 | 1997-08-19 | Nippon Steel Corp | 半導体装置の製造方法 |
JPH10270685A (ja) * | 1997-03-27 | 1998-10-09 | Sony Corp | 電界効果トランジスタとその製造方法、半導体装置とその製造方法、その半導体装置を含む論理回路および半導体基板 |
JP3628472B2 (ja) | 1997-04-01 | 2005-03-09 | 沖電気工業株式会社 | Mosfet及びその製造方法 |
US6121100A (en) * | 1997-12-31 | 2000-09-19 | Intel Corporation | Method of fabricating a MOS transistor with a raised source/drain extension |
JP4258034B2 (ja) * | 1998-05-27 | 2009-04-30 | ソニー株式会社 | 半導体装置及び半導体装置の製造方法 |
US6429061B1 (en) * | 2000-07-26 | 2002-08-06 | International Business Machines Corporation | Method to fabricate a strained Si CMOS structure using selective epitaxial deposition of Si after device isolation formation |
US6903384B2 (en) * | 2003-01-15 | 2005-06-07 | Sharp Laboratories Of America, Inc. | System and method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications |
CN1277296C (zh) * | 2003-03-27 | 2006-09-27 | 台湾积体电路制造股份有限公司 | 具有应变硅锗层外延的场效应晶体管结构及其制造方法 |
JP2005057147A (ja) * | 2003-08-07 | 2005-03-03 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
JP2005327867A (ja) * | 2004-05-13 | 2005-11-24 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2005353831A (ja) * | 2004-06-10 | 2005-12-22 | Toshiba Corp | 半導体装置 |
US7227205B2 (en) | 2004-06-24 | 2007-06-05 | International Business Machines Corporation | Strained-silicon CMOS device and method |
-
2006
- 2006-02-21 JP JP2006043418A patent/JP5096681B2/ja not_active Expired - Fee Related
-
2007
- 2007-02-16 TW TW096106070A patent/TWI353055B/zh not_active IP Right Cessation
- 2007-02-20 US US11/708,068 patent/US20070194389A1/en not_active Abandoned
- 2007-02-25 CN CN2007100058110A patent/CN101079445B/zh not_active Expired - Fee Related
-
2008
- 2008-10-03 US US12/285,414 patent/US7642151B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20070194389A1 (en) | 2007-08-23 |
CN101079445A (zh) | 2007-11-28 |
JP2007227421A (ja) | 2007-09-06 |
US20090047767A1 (en) | 2009-02-19 |
TW200739906A (en) | 2007-10-16 |
US7642151B2 (en) | 2010-01-05 |
TWI353055B (en) | 2011-11-21 |
CN101079445B (zh) | 2011-07-13 |
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