CN102856375B - 一种半导体结构及其制造方法 - Google Patents
一种半导体结构及其制造方法 Download PDFInfo
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- CN102856375B CN102856375B CN201110174687.7A CN201110174687A CN102856375B CN 102856375 B CN102856375 B CN 102856375B CN 201110174687 A CN201110174687 A CN 201110174687A CN 102856375 B CN102856375 B CN 102856375B
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CN201110174687.7A CN102856375B (zh) | 2011-06-27 | 2011-06-27 | 一种半导体结构及其制造方法 |
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CN201110174687.7A CN102856375B (zh) | 2011-06-27 | 2011-06-27 | 一种半导体结构及其制造方法 |
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CN102856375A CN102856375A (zh) | 2013-01-02 |
CN102856375B true CN102856375B (zh) | 2015-05-20 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1835248A (zh) * | 2005-03-17 | 2006-09-20 | 韩国科学技术院 | 悬空硅层的金属氧化物半导体场效应晶体管及其制造方法 |
CN1985374A (zh) * | 2004-06-24 | 2007-06-20 | 国际商业机器公司 | 改进的应变硅cmos器件和方法 |
CN101197326A (zh) * | 2002-07-22 | 2008-06-11 | 因芬尼昂技术股份公司 | 非易失内存单元及制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4031329B2 (ja) * | 2002-09-19 | 2008-01-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP4670524B2 (ja) * | 2005-07-22 | 2011-04-13 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP5585056B2 (ja) * | 2009-11-19 | 2014-09-10 | 富士電機株式会社 | Son半導体基板の製造方法 |
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- 2011-06-27 CN CN201110174687.7A patent/CN102856375B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101197326A (zh) * | 2002-07-22 | 2008-06-11 | 因芬尼昂技术股份公司 | 非易失内存单元及制造方法 |
CN1985374A (zh) * | 2004-06-24 | 2007-06-20 | 国际商业机器公司 | 改进的应变硅cmos器件和方法 |
CN1835248A (zh) * | 2005-03-17 | 2006-09-20 | 韩国科学技术院 | 悬空硅层的金属氧化物半导体场效应晶体管及其制造方法 |
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Address after: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NMC Co.,Ltd. Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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Effective date of registration: 20190228 Address after: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Wenchang Road 8 Patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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TR01 | Transfer of patent right |