CN1882397A - 清洗掩模 - Google Patents
清洗掩模 Download PDFInfo
- Publication number
- CN1882397A CN1882397A CNA2004800276340A CN200480027634A CN1882397A CN 1882397 A CN1882397 A CN 1882397A CN A2004800276340 A CNA2004800276340 A CN A2004800276340A CN 200480027634 A CN200480027634 A CN 200480027634A CN 1882397 A CN1882397 A CN 1882397A
- Authority
- CN
- China
- Prior art keywords
- container
- mask
- cleaning solution
- described method
- gal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 claims abstract description 161
- 238000013019 agitation Methods 0.000 claims abstract description 29
- 239000000243 solution Substances 0.000 claims description 113
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 61
- 229910052750 molybdenum Inorganic materials 0.000 claims description 33
- 239000011733 molybdenum Substances 0.000 claims description 33
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 31
- 238000003756 stirring Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 5
- 150000003606 tin compounds Chemical class 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229920001903 high density polyethylene Polymers 0.000 claims description 4
- 239000004700 high-density polyethylene Substances 0.000 claims description 4
- 239000004809 Teflon Substances 0.000 claims description 3
- 229920006362 Teflon® Polymers 0.000 claims description 3
- 150000007513 acids Chemical class 0.000 claims 1
- 238000005530 etching Methods 0.000 description 40
- 235000011167 hydrochloric acid Nutrition 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 150000007516 brønsted-lowry acids Chemical class 0.000 description 2
- 150000007528 brønsted-lowry bases Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000002198 insoluble material Substances 0.000 description 2
- 150000002751 molybdenum Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000009991 scouring Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000003643 water by type Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZGHDMISTQPRNRG-UHFFFAOYSA-N dimolybdenum Chemical compound [Mo]#[Mo] ZGHDMISTQPRNRG-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/044—Cleaning involving contact with liquid using agitated containers in which the liquid and articles or material are placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G3/00—Apparatus for cleaning or pickling metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
Abstract
Description
酸 | 浓度范围 |
硝酸 | 7%-70% |
乙酸 | 13%-99.9% |
磷酸 | 40%-86% |
氢氧化钠 | 5-10%(电解) |
硫酸 | 30%-96% |
氢氟酸 | 5%-49% |
过氧化氢 | 5%-30% |
Claims (115)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/627,416 US7091132B2 (en) | 2003-07-24 | 2003-07-24 | Ultrasonic assisted etch using corrosive liquids |
US10/627,416 | 2003-07-24 | ||
US10/696,492 US20050016565A1 (en) | 2003-07-24 | 2003-10-28 | Cleaning masks |
US10/696,492 | 2003-10-28 | ||
PCT/US2004/023596 WO2005010947A2 (en) | 2003-07-24 | 2004-07-22 | Cleaning masks |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1882397A true CN1882397A (zh) | 2006-12-20 |
CN1882397B CN1882397B (zh) | 2014-06-04 |
Family
ID=34080634
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200480027634.0A Expired - Lifetime CN1882397B (zh) | 2003-07-24 | 2004-07-22 | 清洗掩模 |
CNB200480027643XA Expired - Lifetime CN100449699C (zh) | 2003-07-24 | 2004-07-23 | 一种用于化学蚀刻工件的超声蚀刻装置及方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200480027643XA Expired - Lifetime CN100449699C (zh) | 2003-07-24 | 2004-07-23 | 一种用于化学蚀刻工件的超声蚀刻装置及方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7091132B2 (zh) |
JP (2) | JP4603542B2 (zh) |
KR (1) | KR101120707B1 (zh) |
CN (2) | CN1882397B (zh) |
SG (2) | SG145689A1 (zh) |
TW (1) | TWI244693B (zh) |
WO (1) | WO2005010950A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110369383A (zh) * | 2019-07-17 | 2019-10-25 | 海安光易通信设备有限公司 | 一种防尘帽清洗方法 |
Families Citing this family (31)
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US20050161061A1 (en) * | 2003-09-17 | 2005-07-28 | Hong Shih | Methods for cleaning a set of structures comprising yttrium oxide in a plasma processing system |
US7581511B2 (en) * | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US7754609B1 (en) | 2003-10-28 | 2010-07-13 | Applied Materials, Inc. | Cleaning processes for silicon carbide materials |
US20070275479A1 (en) * | 2006-05-23 | 2007-11-29 | Dileep Chintaman Joshi | Method and materials for measuring the leachability of metals |
JP5156752B2 (ja) * | 2006-11-01 | 2013-03-06 | クアンタム グローバル テクノロジーズ リミテッド ライアビリティ カンパニー | チャンバーコンポーネントを洗浄する方法及び装置 |
EP2135974B1 (en) * | 2007-03-13 | 2014-05-07 | Tohoku University | Method of surface treatment for metallic glass part, and metallic glass part with its surface treated by the method |
FR2932497B1 (fr) * | 2008-06-12 | 2011-03-11 | C & K Components Sas | Procede de depot selectif d'un metal precieux sur un support par ablation ultrasonore d'un element de masquage et son dispositif |
JP5796936B2 (ja) * | 2010-06-01 | 2015-10-21 | キヤノン株式会社 | 多孔質ガラスの製造方法 |
JP5941915B2 (ja) * | 2010-09-01 | 2016-06-29 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 酸性水溶液及びエッチング液並びに単結晶及び多結晶シリコン基板の表面をしぼ加工する方法 |
JP6326379B2 (ja) | 2012-03-08 | 2018-05-16 | ディー−ウェイブ システムズ,インコーポレイテッド | 超伝導集積回路の製作のためのシステムおよび方法 |
CN102842526B (zh) * | 2012-07-31 | 2015-03-04 | 耿彪 | 高温蚀刻工艺槽 |
US9517873B1 (en) | 2012-09-28 | 2016-12-13 | Air Liquide Electronics U.S. Lp | Clean storage packaging article and method for making and using |
WO2014158320A1 (en) * | 2013-03-14 | 2014-10-02 | Applied Materials, Inc. | Wet cleaning of chamber component |
CN103449731B (zh) * | 2013-09-06 | 2016-06-22 | 中国工程物理研究院激光聚变研究中心 | 一种提升熔石英光学元件损伤阈值的方法 |
JP6028754B2 (ja) | 2014-03-11 | 2016-11-16 | トヨタ自動車株式会社 | SiC単結晶基板の製造方法 |
EP3174642A1 (en) * | 2014-07-30 | 2017-06-07 | Corning Incorporated | Ultrasonic tank and methods for uniform glass substrate etching |
EP3577700B1 (en) | 2017-02-01 | 2022-03-30 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
CN107342219A (zh) * | 2017-06-29 | 2017-11-10 | 中国电子科技集团公司第十研究所 | 一种p型HgCdTe复合膜层接触孔的湿法腐蚀方法 |
CN107671059B (zh) * | 2017-10-24 | 2023-09-26 | 浙江绿维环境股份有限公司 | 一种酸雾收集装置 |
CN109950175A (zh) * | 2017-12-21 | 2019-06-28 | 有研半导体材料有限公司 | 一种用于硅环腐蚀的装置及方法 |
CN108354678A (zh) * | 2017-12-28 | 2018-08-03 | 南京康翱峰自动化科技有限公司 | 手术剪的清洗装置 |
CN108160598A (zh) * | 2017-12-28 | 2018-06-15 | 南京康翱峰自动化科技有限公司 | 医疗器械清洗烘干装置 |
KR102181378B1 (ko) * | 2018-10-11 | 2020-11-20 | 한양대학교 산학협력단 | 다공성 규소-저마늄 전극 소재의 제조방법 및 이를 이용한 이차전지 |
US20200152851A1 (en) | 2018-11-13 | 2020-05-14 | D-Wave Systems Inc. | Systems and methods for fabricating superconducting integrated circuits |
CN111261542A (zh) * | 2018-11-30 | 2020-06-09 | 有研半导体材料有限公司 | 一种碱腐蚀去除晶圆表面损伤的装置与方法 |
US12102017B2 (en) | 2019-02-15 | 2024-09-24 | D-Wave Systems Inc. | Kinetic inductance for couplers and compact qubits |
CN111689458A (zh) * | 2019-03-13 | 2020-09-22 | 北京大学 | 一种高深宽高对称性高表面光滑度硅微半球曲面的制备系统及其工艺方法 |
CN111438133A (zh) * | 2020-04-30 | 2020-07-24 | 深圳市路维光电股份有限公司 | 铬版清洗治具及清洗方法 |
WO2022205480A1 (zh) * | 2021-04-02 | 2022-10-06 | 眉山博雅新材料有限公司 | 一种组合晶体制备方法和系统 |
CN111719154A (zh) * | 2020-06-08 | 2020-09-29 | 江苏双环齿轮有限公司 | 一种齿轮磨削后表面回火的浸蚀检验装置 |
CN111863582B (zh) * | 2020-07-24 | 2022-04-22 | 北方夜视技术股份有限公司 | 超声悬浮旋转式微通道板腐蚀方法 |
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2003
- 2003-07-24 US US10/627,416 patent/US7091132B2/en not_active Expired - Lifetime
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-
2004
- 2004-07-22 CN CN200480027634.0A patent/CN1882397B/zh not_active Expired - Lifetime
- 2004-07-22 SG SG200805492-6A patent/SG145689A1/en unknown
- 2004-07-23 SG SG200805491-8A patent/SG163440A1/en unknown
- 2004-07-23 JP JP2006521293A patent/JP4603542B2/ja not_active Expired - Lifetime
- 2004-07-23 KR KR1020067001651A patent/KR101120707B1/ko active IP Right Grant
- 2004-07-23 WO PCT/US2004/023905 patent/WO2005010950A2/en active Application Filing
- 2004-07-23 CN CNB200480027643XA patent/CN100449699C/zh not_active Expired - Lifetime
- 2004-07-26 TW TW093122253A patent/TWI244693B/zh not_active IP Right Cessation
-
2006
- 2006-06-27 US US11/477,191 patent/US7377991B2/en not_active Expired - Lifetime
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110369383A (zh) * | 2019-07-17 | 2019-10-25 | 海安光易通信设备有限公司 | 一种防尘帽清洗方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2005010950A3 (en) | 2005-07-07 |
CN1882397B (zh) | 2014-06-04 |
JP5475599B2 (ja) | 2014-04-16 |
CN1883034A (zh) | 2006-12-20 |
US20060243390A1 (en) | 2006-11-02 |
SG145689A1 (en) | 2008-09-29 |
SG163440A1 (en) | 2010-08-30 |
TW200520086A (en) | 2005-06-16 |
WO2005010950A2 (en) | 2005-02-03 |
JP2011017085A (ja) | 2011-01-27 |
US7091132B2 (en) | 2006-08-15 |
JP4603542B2 (ja) | 2010-12-22 |
KR20060093323A (ko) | 2006-08-24 |
KR101120707B1 (ko) | 2012-03-23 |
JP2007500431A (ja) | 2007-01-11 |
US20050016959A1 (en) | 2005-01-27 |
US7377991B2 (en) | 2008-05-27 |
CN100449699C (zh) | 2009-01-07 |
US20050016565A1 (en) | 2005-01-27 |
TWI244693B (en) | 2005-12-01 |
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