JP4603542B2 - 腐食液を使用する超音波補助式エッチング - Google Patents
腐食液を使用する超音波補助式エッチング Download PDFInfo
- Publication number
- JP4603542B2 JP4603542B2 JP2006521293A JP2006521293A JP4603542B2 JP 4603542 B2 JP4603542 B2 JP 4603542B2 JP 2006521293 A JP2006521293 A JP 2006521293A JP 2006521293 A JP2006521293 A JP 2006521293A JP 4603542 B2 JP4603542 B2 JP 4603542B2
- Authority
- JP
- Japan
- Prior art keywords
- inner tank
- workpiece
- etching solution
- etching
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 title claims description 113
- 239000007788 liquid Substances 0.000 title description 4
- 239000000243 solution Substances 0.000 claims description 80
- 239000007864 aqueous solution Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 40
- 230000007246 mechanism Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 29
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 28
- 239000000126 substance Substances 0.000 claims description 28
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 23
- 239000000356 contaminant Substances 0.000 claims description 21
- 229920000642 polymer Polymers 0.000 claims description 20
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000012633 leachable Substances 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 12
- 229910017604 nitric acid Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000523 sample Substances 0.000 claims description 9
- 229920001903 high density polyethylene Polymers 0.000 claims description 8
- 239000004700 high-density polyethylene Substances 0.000 claims description 8
- 125000000129 anionic group Chemical group 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 239000002585 base Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000003929 acidic solution Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- -1 polyethylene Polymers 0.000 description 5
- 238000002604 ultrasonography Methods 0.000 description 5
- 239000000443 aerosol Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229920001684 low density polyethylene Polymers 0.000 description 4
- 239000004702 low-density polyethylene Substances 0.000 description 4
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000000527 sonication Methods 0.000 description 3
- 229920002274 Nalgene Polymers 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 239000003637 basic solution Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000004812 Fluorinated ethylene propylene Substances 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011081 inoculation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229920001179 medium density polyethylene Polymers 0.000 description 1
- 239000004701 medium-density polyethylene Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920009441 perflouroethylene propylene Polymers 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012667 polymer degradation Methods 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/044—Cleaning involving contact with liquid using agitated containers in which the liquid and articles or material are placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G3/00—Apparatus for cleaning or pickling metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
Description
他に特に指示のない限り、本明細書の中で使用された技術用語および科学用語はすべて、それらが本発明の当業者によるものと同じ意味を有する。本発明は、説明された特定の方法論、プロトコル、および反応物質に限定されないと理解すべきであるが、その理由はこれらが変化するものであるからである。本明細書の中で引用されたすべての刊行物および特許は、本発明に関連して使用されることのある構成および方法論を説明しかつ開示する目的のために、参照として本明細書に特別に組み入れられる。
本発明は、1つの態様では、被加工物を超音波により化学的にエッチングする装置および一体型システムを提供する。以下に詳しく説明されるように、この装置が、直近の周囲環境へのエッチング溶液の曝露を最小化してこれらの溶液から入ってくる無用の汚染物質をこの装置から減少させること、危険な蒸気の形成を阻止するためにエッチング溶液の分圧を制御可能に調節する機能、被加工物をスケールアップ処理する機能、より安全な加工環境をもたらすとともにエッチング溶液の化学組成の変化を防止する機能を含む、従来技術に勝る幾つかの利点を提供することが発見されている。以下で考慮されているのはこの装置の構成要素である。
以下の実施例は、本明細書に記載された本発明を更に図解しており、また、本発明の範囲を限定することを決して意図していない。
フッ化水素酸(49重量%)/硝酸(70重量%)/水の1:1:1の比からなり、16重量%のHFおよび23重量%のHNO3の酸濃度に相当する混合物を、20±5℃で25〜40kHzの超音波エネルギーと30〜50ワット/ガロンの超音波動力とを使用する石英の被加工物の酸性エッチングについては、毎分0.5μmのエッチングが得られた。
半導体用具から石英絶縁体リングが、フッ化水素酸(49重量%)/硝酸(70重量%)/水の1:1:1あるいは1:2:2の容積比からなり、20±5℃における25〜40kHzの超音波エネルギーと30〜50ワット/ガロンの超音波動力とで、材料の5〜100μmが超音波エッチングされた。1:1:1の容積比は、16重量%のHFおよび23重量%のHNO3であり、また、1:2:2の比については、10重量%のHFおよび30重量%のHNO3である。
材料の5〜200μmを除去するために、酸性および塩基性の超音波補助式エッチングを使用して、ポリシリコンが等方的にあるいは非等方的にエッチングされた。一実施例では、5重量%のフッ化水素酸および7重量%の硝酸に対応するフッ化水素酸(49重量%)/硝酸(70重量%)/水の1:7:2の比からなり、20±5℃における25〜40kHzの超音波エネルギーと30〜50ワット/ガロンの超音波動力とで、材料を除去するために使用された。別の実施例では、30%水酸化カリウム溶液が、20±5℃における25〜40kHzの超音波エネルギーと30〜50ワット/ガロンの超音波動力とで、材料を除去するために使用された。
Claims (24)
- 被加工物を化学的にエッチングする超音波エッチング装置であって、
水溶液で少なくとも一部が満たされた外側タンクと、
耐薬品性ポリマーを備えていて少なくとも一部が前記外側タンクの内部に配置されかつ前記水溶液と接している内側タンクであって、少なくとも10重量%の全酸性度あるいは全塩基度を有する少なくとも1リットルのエッチング溶液で少なくとも一部が満たされており、少なくとも側壁および基部を有するとともに上方口部を画成しており、かつ、被加工物を受け入れるものである内側タンクと、
前記内側タンクの前記口部に係合した蓋であって、エッチング溶液の上方におけるガスの分圧を増大させるために、この蓋の重量によって、前記内側タンクの 口部とこの蓋の下面との間に少なくとも一部封止が作り出される蓋と、
前記外側タンクに結合されており、前記内側タンクの中の前記エッチング溶液へ超音波エネルギーを付与する超音波変換器と、
前記内側タンクの中に配置された被加工物と前記超音波変換器との間の相対運動を付与するように適合された機構であって、蓋を通して延びているとともに被加工物へ結合されたロッド、または、前記内側タンクおよび/または前記超音波変換器を回転させるための回転運動アクチュエーターを有する機構と、
を備える、装置。 - 水溶液の温度を調整するための加熱要素を更に備える、請求項1に記載の装置。
- タンクの上方に位置決めされているとともに水溶液およびエッチング溶液のうちの少なくとも一方から発生したガスとの適合性のある排気フードを更に備える、請求項1に記載の装置。
- 水溶液の内部に定置されていてエッチング溶液へ付与された音波エネルギーを抑制しかつ/または拡散させるための超音波緩衝器を更に備える、請求項1に記載の装置。
- 超音波変換器が、水溶液の外側に定置されているとともに動力発振器へ操作可能に接続されている、請求項1に記載の装置。
- 超音波エネルギー、温度、温度ムラおよび不純物濃度の1つ以上を監視するためにエッチング溶液の内部に定置されたプローブを更に備える、請求項1に記載の装置。
- 水溶液が、濾過されて脱イオン水槽へ再循環される、請求項1に記載の装置。
- エッチング溶液が、基本的に静的なものである、請求項1に記載の装置。
- 内側タンクとエッチング溶液に接することが可能な回転機構の任意部分とが、フッ素樹脂および高密度ポリエチレンからなる群から選択された材料を備える、請求項1に記載の装置。
- 内側タンクが、10ppb未満の浸出可能な金属性汚染物質と10ppm未満の浸出可能な陰イオン性および有機性の汚染物質とを生成させる、請求項9に記載の装置。
- エッチング溶液が、フッ化水素酸、硝酸および塩酸からなる群から選択された酸を備える、請求項1に記載の装置。
- 水溶液の温度が、20℃から50℃までに維持されている、請求項1に記載の装置。
- 被加工物が、炭化ケイ素、石英、セラミックおよびシリコンからなる群から選択されている、請求項1に記載の装置。
- この機構が、前記基板をある軸を中心に回転させるための回転運動アクチュエーターを備える、請求項1に記載の装置。
- その軸が、実質的に水平な軸である、請求項14に記載の装置。
- その軸が、実質的に垂直な軸である、請求項14に記載の装置。
- 蓋の断面が、内側タンクの口部の断面と実質的に同じである、請求項1に記載の装置。
- 内側タンクの口部および蓋がそれぞれ、蓋の断面に対応している円形形状を有する、請求項17に記載の装置。
- 内側タンクの断面が、被加工物の断面と実質的に同じである、請求項1に記載の装置。
- 内側タンクの口部が、正方形、長方形、三角形、円または楕円からなる群から選択された形状を有する、請求項1に記載の装置。
- 内側タンクが、直方体、立方体あるいは円筒からなる群から選択された形状を有する、請求項1に記載の装置。
- エッチング溶液が、水酸化ナトリウムおよび水酸化カリウムからなる群から選択された塩基を備える、請求項1に記載の装置。
- エッチング溶液が、30%水酸化カリウムを備える、請求項22に記載の装置。
- 被加工物を超音波により化学的にエッチングする方法であって、
耐薬品性ポリマーを備える内面を有するとともに上方口部を画成しており、かつ、被加工物を受け入れる内側タンクであって、水溶液で少なくとも一部が満たされた外側タンクの内部に少なくとも一部が配置されている内側タンクを設けるステップと、
少なくとも10%の全酸性度あるいは全塩基度を有する少なくとも1リットルのエッチング溶液で内側タンクを少なくとも一部を満たすステップと、
被加工物をエッチング溶液の中へ浸漬するステップと、
エッチング溶液を封入するために、かつ、エッチング溶液の上方の分圧を増大させるために、内側タンクの口部を蓋で被覆するステップと、
被加工物のエッチングを加速するために、外側タンクに結合された超音波変換器でエッチング溶液を超音波により攪拌するステップと、
蓋を通して延びているとともに被加工物へ結合されたロッド、または、前記内側タンクおよび/または前記超音波変換器を回転させるための回転運動アクチュエーターの一方を介して、前記内側タンクの中に配置された被加工物と前記超音波変換器との間の相対運動を付与するステップと、
を備える、方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/627,416 US7091132B2 (en) | 2003-07-24 | 2003-07-24 | Ultrasonic assisted etch using corrosive liquids |
PCT/US2004/023905 WO2005010950A2 (en) | 2003-07-24 | 2004-07-23 | Ultrasonic assisted etch using corrosive liquids |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007500431A JP2007500431A (ja) | 2007-01-11 |
JP4603542B2 true JP4603542B2 (ja) | 2010-12-22 |
Family
ID=34080634
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006521293A Active JP4603542B2 (ja) | 2003-07-24 | 2004-07-23 | 腐食液を使用する超音波補助式エッチング |
JP2010202226A Active JP5475599B2 (ja) | 2003-07-24 | 2010-09-09 | マスクの清浄 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010202226A Active JP5475599B2 (ja) | 2003-07-24 | 2010-09-09 | マスクの清浄 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7091132B2 (ja) |
JP (2) | JP4603542B2 (ja) |
KR (1) | KR101120707B1 (ja) |
CN (2) | CN1882397B (ja) |
SG (2) | SG145689A1 (ja) |
TW (1) | TWI244693B (ja) |
WO (1) | WO2005010950A2 (ja) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050161061A1 (en) * | 2003-09-17 | 2005-07-28 | Hong Shih | Methods for cleaning a set of structures comprising yttrium oxide in a plasma processing system |
US7581511B2 (en) * | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US7754609B1 (en) | 2003-10-28 | 2010-07-13 | Applied Materials, Inc. | Cleaning processes for silicon carbide materials |
US20070275479A1 (en) * | 2006-05-23 | 2007-11-29 | Dileep Chintaman Joshi | Method and materials for measuring the leachability of metals |
US7789969B2 (en) * | 2006-11-01 | 2010-09-07 | Applied Materials, Inc. | Methods and apparatus for cleaning chamber components |
CN101568669B (zh) * | 2007-03-13 | 2011-03-02 | 国立大学法人东北大学 | 金属玻璃部件的表面处理方法及采用该方法进行过表面处理的金属玻璃部件 |
FR2932497B1 (fr) * | 2008-06-12 | 2011-03-11 | C & K Components Sas | Procede de depot selectif d'un metal precieux sur un support par ablation ultrasonore d'un element de masquage et son dispositif |
JP5796936B2 (ja) * | 2010-06-01 | 2015-10-21 | キヤノン株式会社 | 多孔質ガラスの製造方法 |
EP2611881A4 (en) * | 2010-09-01 | 2017-08-30 | Basf Se | Aqueous acidic solution and etching solution and method for texturizing surface of single crystal and polycrystal silicon substrates |
WO2013180780A2 (en) | 2012-03-08 | 2013-12-05 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
CN102842526B (zh) * | 2012-07-31 | 2015-03-04 | 耿彪 | 高温蚀刻工艺槽 |
US9517873B1 (en) | 2012-09-28 | 2016-12-13 | Air Liquide Electronics U.S. Lp | Clean storage packaging article and method for making and using |
WO2014158320A1 (en) * | 2013-03-14 | 2014-10-02 | Applied Materials, Inc. | Wet cleaning of chamber component |
CN103449731B (zh) * | 2013-09-06 | 2016-06-22 | 中国工程物理研究院激光聚变研究中心 | 一种提升熔石英光学元件损伤阈值的方法 |
JP6028754B2 (ja) | 2014-03-11 | 2016-11-16 | トヨタ自動車株式会社 | SiC単結晶基板の製造方法 |
KR20170036715A (ko) | 2014-07-30 | 2017-04-03 | 코닝 인코포레이티드 | 일정한 유리 기판의 에칭을 위한 초음파 탱크 및 방법 |
US11038095B2 (en) | 2017-02-01 | 2021-06-15 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
CN107342219A (zh) * | 2017-06-29 | 2017-11-10 | 中国电子科技集团公司第十研究所 | 一种p型HgCdTe复合膜层接触孔的湿法腐蚀方法 |
CN107671059B (zh) * | 2017-10-24 | 2023-09-26 | 浙江绿维环境股份有限公司 | 一种酸雾收集装置 |
CN109950175A (zh) * | 2017-12-21 | 2019-06-28 | 有研半导体材料有限公司 | 一种用于硅环腐蚀的装置及方法 |
CN108354678A (zh) * | 2017-12-28 | 2018-08-03 | 南京康翱峰自动化科技有限公司 | 手术剪的清洗装置 |
CN108160598A (zh) * | 2017-12-28 | 2018-06-15 | 南京康翱峰自动化科技有限公司 | 医疗器械清洗烘干装置 |
KR102181378B1 (ko) * | 2018-10-11 | 2020-11-20 | 한양대학교 산학협력단 | 다공성 규소-저마늄 전극 소재의 제조방법 및 이를 이용한 이차전지 |
US20200152851A1 (en) | 2018-11-13 | 2020-05-14 | D-Wave Systems Inc. | Systems and methods for fabricating superconducting integrated circuits |
CN111261542A (zh) * | 2018-11-30 | 2020-06-09 | 有研半导体材料有限公司 | 一种碱腐蚀去除晶圆表面损伤的装置与方法 |
CN111689458A (zh) * | 2019-03-13 | 2020-09-22 | 北京大学 | 一种高深宽高对称性高表面光滑度硅微半球曲面的制备系统及其工艺方法 |
CN110369383A (zh) * | 2019-07-17 | 2019-10-25 | 海安光易通信设备有限公司 | 一种防尘帽清洗方法 |
CN111438133A (zh) * | 2020-04-30 | 2020-07-24 | 深圳市路维光电股份有限公司 | 铬版清洗治具及清洗方法 |
CN111719154A (zh) * | 2020-06-08 | 2020-09-29 | 江苏双环齿轮有限公司 | 一种齿轮磨削后表面回火的浸蚀检验装置 |
CN111863582B (zh) * | 2020-07-24 | 2022-04-22 | 北方夜视技术股份有限公司 | 超声悬浮旋转式微通道板腐蚀方法 |
EP4289993A4 (en) * | 2021-04-02 | 2024-03-27 | Meishan Boya Advanced Mat Co Ltd | METHOD FOR PREPARING COMPOSITE CRYSTAL, AND SYSTEM |
Family Cites Families (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3992454A (en) * | 1971-04-26 | 1976-11-16 | Joseph W. Aidlin | Protective coating for articles |
US3764379A (en) * | 1971-04-26 | 1973-10-09 | Cogar Corp | Diminishing mask wearout during terminal formation |
US3969195A (en) * | 1971-05-07 | 1976-07-13 | Siemens Aktiengesellschaft | Methods of coating and surface finishing articles made of metals and their alloys |
US4101386A (en) * | 1971-05-07 | 1978-07-18 | Siemens Aktiengesellschaft | Methods of coating and surface finishing articles made of metals and their alloys |
US3775202A (en) * | 1972-03-13 | 1973-11-27 | Dea Prod Inc | Etching control system |
JPS49115663A (ja) * | 1973-03-07 | 1974-11-05 | ||
JPS5144912B2 (ja) | 1973-12-09 | 1976-12-01 | ||
US4078963A (en) * | 1973-12-10 | 1978-03-14 | U.S. Philips Corporation | Method of manufacturing a semiconductor device, having a pattern of conductors on a supporting body |
US4232060A (en) * | 1979-01-22 | 1980-11-04 | Richardson Chemical Company | Method of preparing substrate surface for electroless plating and products produced thereby |
US3986653A (en) * | 1974-09-03 | 1976-10-19 | Tribotech | Method for coating bonding tools and product |
JPS5150833A (ja) * | 1974-10-30 | 1976-05-04 | Hitachi Ltd | Choonpashindoetsuchingusochi |
US4530120A (en) * | 1975-06-30 | 1985-07-23 | Kenji Etani | Methods and apparatus for bathing |
US4519914A (en) * | 1975-06-30 | 1985-05-28 | Kenji Etani | Method for treating swimming pool water |
US4139348A (en) * | 1975-11-28 | 1979-02-13 | Massachusetts Institute Of Technology | Electrochemical process and apparatus to control the chemical state of a material |
US4023936A (en) * | 1976-06-14 | 1977-05-17 | Lukens Steel Company | Titanium clad steel and process for making |
DE2656015A1 (de) * | 1976-12-10 | 1978-06-15 | Bbc Brown Boveri & Cie | Verfahren zum herstellen von halbleiterbauelementen |
JPS54115645A (en) * | 1978-02-28 | 1979-09-08 | Ngk Insulators Ltd | Electrochemical treatment |
US4272612A (en) * | 1979-05-09 | 1981-06-09 | The United States Of America As Represented By The Secretary Of The Army | Erosion lithography to abrade a pattern onto a substrate |
US4327134A (en) * | 1979-11-29 | 1982-04-27 | Alloy Surfaces Company, Inc. | Stripping of diffusion treated metals |
US4367119A (en) * | 1980-08-18 | 1983-01-04 | International Business Machines Corporation | Planar multi-level metal process with built-in etch stop |
US4447824A (en) * | 1980-08-18 | 1984-05-08 | International Business Machines Corporation | Planar multi-level metal process with built-in etch stop |
US4459155A (en) * | 1981-01-10 | 1984-07-10 | The British Petroleum Company Limited | Method of producing corrosion inhibitors |
CA1200624A (en) * | 1981-08-10 | 1986-02-11 | Susumu Muramoto | Method for the manufacture of semiconductor device using refractory metal in a lift-off step |
US4579569A (en) * | 1982-10-14 | 1986-04-01 | Fume-Klean | Apparatus for neutralizing and removing fumes |
US4638553A (en) * | 1982-12-08 | 1987-01-27 | International Rectifier Corporation | Method of manufacture of semiconductor device |
US4449800A (en) * | 1983-01-26 | 1984-05-22 | Buhl Industries, Inc. | Portable overhead projector |
US4699082A (en) * | 1983-02-25 | 1987-10-13 | Liburdi Engineering Limited | Apparatus for chemical vapor deposition |
JPS636729U (ja) * | 1986-06-30 | 1988-01-18 | ||
US4863561A (en) * | 1986-12-09 | 1989-09-05 | Texas Instruments Incorporated | Method and apparatus for cleaning integrated circuit wafers |
JPS63182656A (ja) * | 1987-01-26 | 1988-07-27 | Hitachi Ltd | 洗浄装置 |
US4971590A (en) * | 1987-12-02 | 1990-11-20 | Zenith Electronics Corporation | Process for improving the emissivity of a non-based tension shadow mask |
JPH0296334A (ja) * | 1988-10-01 | 1990-04-09 | Nisso Eng Kk | 高温エッチング液の循環方法 |
US4957583A (en) * | 1989-04-28 | 1990-09-18 | Analog Devices, Inc. | Apparatus for etching patterned substrates |
JPH0317288A (ja) * | 1989-06-13 | 1991-01-25 | Daicel Chem Ind Ltd | スタンパー用電解洗浄液 |
JP2984007B2 (ja) * | 1989-10-09 | 1999-11-29 | エス・イー・エス株式会社 | 洗浄処理装置 |
JP2550248B2 (ja) * | 1991-10-14 | 1996-11-06 | 株式会社東芝 | 半導体集積回路装置およびその製造方法 |
US5152878A (en) * | 1991-12-31 | 1992-10-06 | International Business Machines Corporation | Method for electrochemical cleaning of metal residue on molybdenum masks |
JPH05243204A (ja) * | 1992-02-26 | 1993-09-21 | Nec Corp | 半導体ウェハの浸液処理装置 |
US5221421A (en) * | 1992-03-25 | 1993-06-22 | Hewlett-Packard Company | Controlled etching process for forming fine-geometry circuit lines on a substrate |
JPH06224177A (ja) * | 1993-01-22 | 1994-08-12 | Nec Kansai Ltd | 半導体製造装置 |
US5593339A (en) * | 1993-08-12 | 1997-01-14 | Church & Dwight Co., Inc. | Slurry cleaning process |
US5840402A (en) * | 1994-06-24 | 1998-11-24 | Sheldahl, Inc. | Metallized laminate material having ordered distribution of conductive through holes |
US5516399A (en) * | 1994-06-30 | 1996-05-14 | International Business Machines Corporation | Contactless real-time in-situ monitoring of a chemical etching |
US5516730A (en) * | 1994-08-26 | 1996-05-14 | Memc Electronic Materials, Inc. | Pre-thermal treatment cleaning process of wafers |
US5665473A (en) * | 1994-09-16 | 1997-09-09 | Tokuyama Corporation | Package for mounting a semiconductor device |
US5614027A (en) * | 1994-09-23 | 1997-03-25 | Church & Dwight Co., Inc. | Metal cleaner with novel anti-corrosion system |
US5853492A (en) * | 1996-02-28 | 1998-12-29 | Micron Display Technology, Inc. | Wet chemical emitter tip treatment |
US6012966A (en) * | 1996-05-10 | 2000-01-11 | Canon Kabushiki Kaisha | Precision polishing apparatus with detecting means |
US5891354A (en) * | 1996-07-26 | 1999-04-06 | Fujitsu Limited | Methods of etching through wafers and substrates with a composite etch stop layer |
US5966593A (en) * | 1996-11-08 | 1999-10-12 | W. L. Gore & Associates, Inc. | Method of forming a wafer level contact sheet having a permanent z-axis material |
US5766979A (en) * | 1996-11-08 | 1998-06-16 | W. L. Gore & Associates, Inc. | Wafer level contact sheet and method of assembly |
US5744214A (en) * | 1997-01-30 | 1998-04-28 | International Business Machines Corporation | Corrosion resistant molybdenum mask |
US6391067B2 (en) * | 1997-02-04 | 2002-05-21 | Canon Kabushiki Kaisha | Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus |
US6136724A (en) * | 1997-02-18 | 2000-10-24 | Scp Global Technologies | Multiple stage wet processing chamber |
JP3831877B2 (ja) * | 1997-02-21 | 2006-10-11 | 株式会社丸和製作所 | 半導体基体の製造方法 |
US6767840B1 (en) * | 1997-02-21 | 2004-07-27 | Canon Kabushiki Kaisha | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
US5888308A (en) * | 1997-02-28 | 1999-03-30 | International Business Machines Corporation | Process for removing residue from screening masks with alkaline solution |
US5929521A (en) * | 1997-03-26 | 1999-07-27 | Micron Technology, Inc. | Projected contact structure for bumped semiconductor device and resulting articles and assemblies |
US5789363A (en) * | 1997-05-06 | 1998-08-04 | Church & Dwight Co., Inc. | Aqueous alkaline cleaning composition containing surfactant mixture of N-octyl-2-pyrrolidone and N-coco-beta-aminocarboxylic (C2 -C4) acid for cleaning substrates and method of using same |
US6187216B1 (en) * | 1997-08-27 | 2001-02-13 | Motorola, Inc. | Method for etching a dielectric layer over a semiconductor substrate |
JPH11290805A (ja) | 1998-04-15 | 1999-10-26 | Tietech Co Ltd | メタルマスク洗浄装置 |
US6145096A (en) * | 1998-05-06 | 2000-11-07 | Motive Communications, Inc. | Method, system and computer program product for iterative distributed problem solving |
JP2000064070A (ja) * | 1998-08-25 | 2000-02-29 | Sumitomo Metal Ind Ltd | 金属の酸洗液および酸洗方法 |
US6185606B1 (en) * | 1998-11-09 | 2001-02-06 | Motive Communications, Inc. | Adaptive messaging method, system and computer program product |
JP2000150495A (ja) * | 1998-11-10 | 2000-05-30 | Canon Inc | 多孔質体のエッチング方法及び装置 |
US6615240B1 (en) * | 1998-12-18 | 2003-09-02 | Motive Communications, Inc. | Technical support chain automation with guided self-help capability and option to escalate to live help |
US6477531B1 (en) * | 1998-12-18 | 2002-11-05 | Motive Communications, Inc. | Technical support chain automation with guided self-help capability using active content |
US6353885B1 (en) * | 1999-01-26 | 2002-03-05 | Dell Usa, L.P. | System and method for providing bios-level user configuration of a computer system |
JP2000322283A (ja) * | 1999-05-06 | 2000-11-24 | Fujitsu Ltd | 電子計算機の障害検出方法 |
US6542898B1 (en) * | 1999-05-12 | 2003-04-01 | Motive Communications, Inc. | Technical support chain automation with guided self-help capability using active content developed for specific audiences |
US6368410B1 (en) * | 1999-06-28 | 2002-04-09 | General Electric Company | Semiconductor processing article |
US6606716B1 (en) * | 1999-10-06 | 2003-08-12 | Dell Usa, L.P. | Method and system for automated technical support for computers |
US6560726B1 (en) * | 1999-08-19 | 2003-05-06 | Dell Usa, L.P. | Method and system for automated technical support for computers |
US6539499B1 (en) * | 1999-10-06 | 2003-03-25 | Dell Usa, L.P. | Graphical interface, method, and system for the provision of diagnostic and support services in a computer system |
US6564220B1 (en) * | 1999-10-06 | 2003-05-13 | Dell Usa, L.P. | System and method for monitoring support activity |
US6574615B1 (en) * | 1999-10-06 | 2003-06-03 | Dell Usa, L.P. | System and method for monitoring support activity |
CA2327878C (en) * | 1999-12-17 | 2005-02-15 | Alcan International Limited | Recycling of spent pot linings |
TW572980B (en) * | 2000-01-12 | 2004-01-21 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process |
DE60028091T2 (de) * | 2000-02-07 | 2006-12-21 | Tokyo Electron Ltd. | Quarzglasbauteil für halbleiterherstellungsanlage und verfahren zur metalluntersuchung in einem quarzglasbauteil |
JP2001274131A (ja) * | 2000-03-28 | 2001-10-05 | Toshiba Corp | バッチ式処理装置およびバッチ式処理方法 |
US6506254B1 (en) * | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
US6569252B1 (en) * | 2000-06-30 | 2003-05-27 | International Business Machines Corporation | Semi-aqueous solvent cleaning of paste processing residue from substrates |
JP2002134459A (ja) * | 2000-10-25 | 2002-05-10 | Sony Corp | 洗浄装置およびその管理方法 |
JP2002192089A (ja) * | 2000-12-25 | 2002-07-10 | Nomura Micro Sci Co Ltd | 洗浄方法 |
JP2002307312A (ja) * | 2001-04-11 | 2002-10-23 | Olympus Optical Co Ltd | 研磨加工装置、研磨加工方法、研磨加工をコンピュータに実行させる制御プログラムおよび記録媒体 |
EP1310466A3 (en) * | 2001-11-13 | 2003-10-22 | Tosoh Corporation | Quartz glass parts, ceramic parts and process of producing those |
KR100514167B1 (ko) * | 2002-06-24 | 2005-09-09 | 삼성전자주식회사 | 세정액 및 이를 사용한 세라믹 부품의 세정 방법 |
US20040000327A1 (en) * | 2002-06-26 | 2004-01-01 | Fabio Somboli | Apparatus and method for washing quartz parts, particularly for process equipment used in semiconductor industries |
US6701826B2 (en) * | 2002-06-28 | 2004-03-09 | Eupa International Corporation | Electric coffee maker for selectively brewing Espresso coffee and Americano coffee |
US7250114B2 (en) * | 2003-05-30 | 2007-07-31 | Lam Research Corporation | Methods of finishing quartz glass surfaces and components made by the methods |
-
2003
- 2003-07-24 US US10/627,416 patent/US7091132B2/en not_active Expired - Lifetime
- 2003-10-28 US US10/696,492 patent/US20050016565A1/en not_active Abandoned
-
2004
- 2004-07-22 SG SG200805492-6A patent/SG145689A1/en unknown
- 2004-07-22 CN CN200480027634.0A patent/CN1882397B/zh active Active
- 2004-07-23 CN CNB200480027643XA patent/CN100449699C/zh active Active
- 2004-07-23 JP JP2006521293A patent/JP4603542B2/ja active Active
- 2004-07-23 WO PCT/US2004/023905 patent/WO2005010950A2/en active Application Filing
- 2004-07-23 SG SG200805491-8A patent/SG163440A1/en unknown
- 2004-07-23 KR KR1020067001651A patent/KR101120707B1/ko active IP Right Grant
- 2004-07-26 TW TW093122253A patent/TWI244693B/zh active
-
2006
- 2006-06-27 US US11/477,191 patent/US7377991B2/en not_active Expired - Lifetime
-
2010
- 2010-09-09 JP JP2010202226A patent/JP5475599B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US20060243390A1 (en) | 2006-11-02 |
JP2011017085A (ja) | 2011-01-27 |
JP5475599B2 (ja) | 2014-04-16 |
KR101120707B1 (ko) | 2012-03-23 |
US20050016565A1 (en) | 2005-01-27 |
TWI244693B (en) | 2005-12-01 |
TW200520086A (en) | 2005-06-16 |
CN1882397A (zh) | 2006-12-20 |
WO2005010950A2 (en) | 2005-02-03 |
CN1883034A (zh) | 2006-12-20 |
US7377991B2 (en) | 2008-05-27 |
KR20060093323A (ko) | 2006-08-24 |
US20050016959A1 (en) | 2005-01-27 |
US7091132B2 (en) | 2006-08-15 |
CN1882397B (zh) | 2014-06-04 |
SG145689A1 (en) | 2008-09-29 |
SG163440A1 (en) | 2010-08-30 |
WO2005010950A3 (en) | 2005-07-07 |
JP2007500431A (ja) | 2007-01-11 |
CN100449699C (zh) | 2009-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4603542B2 (ja) | 腐食液を使用する超音波補助式エッチング | |
US6457478B1 (en) | Method for treating an object using ultra-violet light | |
TW559940B (en) | Process and apparatus for treating a workpiece such as a semiconductor wafer | |
US7033068B2 (en) | Substrate processing apparatus for processing substrates using dense phase gas and sonic waves | |
US7914623B2 (en) | Post-ion implant cleaning for silicon on insulator substrate preparation | |
US20040055621A1 (en) | Processing of semiconductor components with dense processing fluids and ultrasonic energy | |
JPH1027771A (ja) | 洗浄方法及び洗浄装置 | |
US7578302B2 (en) | Megasonic cleaning using supersaturated solution | |
JPS61228629A (ja) | ウエハ等薄板体の表面処理装置 | |
EP1631396A2 (en) | Megasonic cleaning using supersaturated cleaning solution | |
TWI732450B (zh) | 基板處理方法、半導體製造方法以及基板處理裝置 | |
JP5716016B2 (ja) | ガスの存在下で材料をエッチングする方法 | |
JP2856998B2 (ja) | 超音波洗浄装置 | |
JPS6345821A (ja) | 蒸気処理装置 | |
JP3575854B2 (ja) | シリコン単結晶ウエーハの洗浄方法および洗浄装置 | |
JP2006303123A (ja) | 洗浄保護治具 | |
JP2006528840A (ja) | マスクの清浄 | |
KR101396929B1 (ko) | 불순물 제거용 세정액 및 이를 이용한 불순물 제거방법 | |
JPS62165938A (ja) | 処理方法 | |
KR20090125484A (ko) | 기판 세정 장치 및 방법 | |
JPS63107120A (ja) | 処理装置 | |
Kumari | Control of cavitation using dissolved carbon dioxide for damage-free megasonic cleaning of wafers | |
WO2001026144A1 (en) | Methods for cleaning microelectronic substrates using ultradilute cleaning liquids | |
KR20010041359A (ko) | 통제된 기체 수준을 가진 공정 액체를 사용하는 전자부품습식 처리방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070706 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20100511 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100512 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100518 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100812 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100907 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101001 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131008 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4603542 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131008 Year of fee payment: 3 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101209 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131008 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131008 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |