JP5156752B2 - チャンバーコンポーネントを洗浄する方法及び装置 - Google Patents
チャンバーコンポーネントを洗浄する方法及び装置 Download PDFInfo
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- JP5156752B2 JP5156752B2 JP2009535302A JP2009535302A JP5156752B2 JP 5156752 B2 JP5156752 B2 JP 5156752B2 JP 2009535302 A JP2009535302 A JP 2009535302A JP 2009535302 A JP2009535302 A JP 2009535302A JP 5156752 B2 JP5156752 B2 JP 5156752B2
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- orifice
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- 238000004140 cleaning Methods 0.000 title claims description 145
- 238000000034 method Methods 0.000 title claims description 44
- 239000007789 gas Substances 0.000 claims description 65
- 238000009826 distribution Methods 0.000 claims description 36
- 239000012530 fluid Substances 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 238000005304 joining Methods 0.000 claims 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
以下に詳細に述べるように、少なくとも1つの実施形態では、コンポーネント100の第1の狭い部分302は、コンポーネント100の前面104が槽204内において洗浄溶液で洗浄されるときに保護される。従って、第1の狭い部分302は、コンポーネント100の洗浄中にダメージを受けない。例えば、コンポーネント100は、ジグ206に結合することができる。次いで、オリフィス102の第1の狭い部分302を保護しながらコンポーネント100の前面104を洗浄するために、ジグ206の通路210を経てコンポーネント100の第1の狭い部分302へ流体(例えば、ガス)を送り込みながら、槽204の洗浄溶液に前面104を入れることができる。前面104が洗浄された後、オリフィス102の第1の狭い部分302への流体の流れを停止して、洗浄溶液を第1の狭い部分302に入れて洗浄を行うことができる。例えば、ジグ206の通路210を経て第1の狭い部分302へ真空を付与し、(以下に更に述べるように)オリフィス102の第1の狭い部分302へ洗浄溶液を引き込むことができる。
Claims (11)
- オリフィスを有する半導体製造チャンバーのコンポーネントを洗浄する方法において、 洗浄溶液を有する槽に上記コンポーネントを配置するステップと、
上記洗浄溶液が上記コンポーネントを洗浄する間に、上記オリフィスに流体を噴射して、上記オリフィスの少なくとも第1部分を、上記洗浄溶液がない状態に維持するステップと、
上記オリフィスが上記洗浄溶液と接触している時間を制御するステップと、
上記オリフィスから上記流体を回収し、上記洗浄溶液が上記オリフィスの上記第1部分に入り込んで上記オリフィスの上記第1部分を洗浄するようにするステップと、
を備え、
上記オリフィスから上記流体を回収する上記ステップは、上記オリフィスに真空を付与する段階を含む、方法。 - 上記コンポーネントは、ガス分配要素である、請求項1に記載の方法。
- 上記コンポーネントは、堆積チャンバーに使用されるフェースプレートである、請求項2に記載の方法。
- 上記洗浄溶液は、
フッ化水素酸(HF)、及び
硝酸(HNO3)
を含む請求項1に記載の方法。 - 上記流体は、窒素ガスである、請求項1に記載の方法。
- 上記流体は、不活性ガスである、請求項1に記載の方法。
- 上記オリフィスから上記流体を回収した後に上記オリフィスに上記流体を流し込むステップと、
上記オリフィスから上記流体を2回目に回収するステップと、
を更に備えた請求項1に記載の方法。 - 上記オリフィスに流体を流し込む上記ステップは、
上記コンポーネントにジグを結合する段階と、
上記ジグを通して上記オリフィスに流体を流し込む段階と、
を含む請求項1に記載の方法。 - 上記ジグは、上記コンポーネントと流体密シールを形成する、請求項8に記載の方法。
- オリフィスを有する半導体製造チャンバーのコンポーネントを洗浄する方法において、 洗浄溶液を有する槽に上記コンポーネントを配置するステップと、
上記洗浄溶液が上記オリフィスの第2部分を洗浄する間に、上記オリフィスに流体を噴射して、上記オリフィスの少なくとも第1部分を、上記洗浄溶液がない状態に維持するステップと、
上記オリフィスが上記洗浄溶液と接触している時間を制御するステップと、
上記オリフィスから上記流体を回収し、上記洗浄溶液が上記オリフィスの上記第1部分に入り込んで上記オリフィスの上記第1部分を洗浄するようにするステップと、
を備え、
上記オリフィスから上記流体を回収する上記ステップは、上記オリフィスに真空を付与する段階を含む、方法。 - 上記オリフィスに流体を流し込む上記ステップは、
上記コンポーネントにジグを結合する段階と、
上記ジグを通して上記オリフィスに流体を流し込む段階と、
を含む請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86390606P | 2006-11-01 | 2006-11-01 | |
US60/863,906 | 2006-11-01 | ||
PCT/US2007/022978 WO2008057351A2 (en) | 2006-11-01 | 2007-10-31 | Methods and apparatus for cleaning chamber components |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010508145A JP2010508145A (ja) | 2010-03-18 |
JP2010508145A5 JP2010508145A5 (ja) | 2010-12-09 |
JP5156752B2 true JP5156752B2 (ja) | 2013-03-06 |
Family
ID=39365035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009535302A Active JP5156752B2 (ja) | 2006-11-01 | 2007-10-31 | チャンバーコンポーネントを洗浄する方法及び装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7789969B2 (ja) |
JP (1) | JP5156752B2 (ja) |
KR (1) | KR101432161B1 (ja) |
TW (1) | TWI381888B (ja) |
WO (1) | WO2008057351A2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7754609B1 (en) | 2003-10-28 | 2010-07-13 | Applied Materials, Inc. | Cleaning processes for silicon carbide materials |
JP5156752B2 (ja) | 2006-11-01 | 2013-03-06 | クアンタム グローバル テクノロジーズ リミテッド ライアビリティ カンパニー | チャンバーコンポーネントを洗浄する方法及び装置 |
KR101512632B1 (ko) * | 2007-12-19 | 2015-04-21 | 퀀텀 글로벌 테크놀로지스, 엘엘씨 | 프로세스 키트 및 챔버 세정 방법, 그리고 루테늄 회수 방법 |
US8075701B2 (en) * | 2008-06-30 | 2011-12-13 | Lam Research Corporation | Processes for reconditioning multi-component electrodes |
CN201419170Y (zh) * | 2009-03-18 | 2010-03-10 | 鸿富锦精密工业(深圳)有限公司 | 吸嘴清洗装置 |
US9999907B2 (en) | 2016-04-01 | 2018-06-19 | Applied Materials, Inc. | Cleaning process that precipitates yttrium oxy-flouride |
US11776822B2 (en) * | 2018-05-29 | 2023-10-03 | Applied Materials, Inc. | Wet cleaning of electrostatic chuck |
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WO2008057351A2 (en) | 2008-05-15 |
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TW200833430A (en) | 2008-08-16 |
KR20090091153A (ko) | 2009-08-26 |
TWI381888B (zh) | 2013-01-11 |
JP2010508145A (ja) | 2010-03-18 |
US20080099054A1 (en) | 2008-05-01 |
US7789969B2 (en) | 2010-09-07 |
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