CN1755943B - 具有半导体元件的显示器件及其制造方法 - Google Patents

具有半导体元件的显示器件及其制造方法 Download PDF

Info

Publication number
CN1755943B
CN1755943B CN2005100920813A CN200510092081A CN1755943B CN 1755943 B CN1755943 B CN 1755943B CN 2005100920813 A CN2005100920813 A CN 2005100920813A CN 200510092081 A CN200510092081 A CN 200510092081A CN 1755943 B CN1755943 B CN 1755943B
Authority
CN
China
Prior art keywords
drain
film
source
fluid
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005100920813A
Other languages
English (en)
Chinese (zh)
Other versions
CN1755943A (zh
Inventor
前川慎志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1755943A publication Critical patent/CN1755943A/zh
Application granted granted Critical
Publication of CN1755943B publication Critical patent/CN1755943B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN2005100920813A 2004-08-20 2005-08-19 具有半导体元件的显示器件及其制造方法 Expired - Fee Related CN1755943B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004241119A JP4628040B2 (ja) 2004-08-20 2004-08-20 半導体素子を備えた表示装置の製造方法
JP241119/04 2004-08-20

Publications (2)

Publication Number Publication Date
CN1755943A CN1755943A (zh) 2006-04-05
CN1755943B true CN1755943B (zh) 2010-05-12

Family

ID=35908810

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005100920813A Expired - Fee Related CN1755943B (zh) 2004-08-20 2005-08-19 具有半导体元件的显示器件及其制造方法

Country Status (5)

Country Link
US (2) US7759735B2 (enExample)
JP (1) JP4628040B2 (enExample)
KR (1) KR101191279B1 (enExample)
CN (1) CN1755943B (enExample)
TW (1) TWI430450B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020182237A1 (en) * 2001-03-22 2002-12-05 The Procter & Gamble Company Skin care compositions containing a sugar amine
US7977253B2 (en) * 2004-08-31 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7622338B2 (en) 2004-08-31 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7470604B2 (en) * 2004-10-08 2008-12-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US7537976B2 (en) * 2005-05-20 2009-05-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
EP2034520B1 (en) * 2006-06-08 2013-04-03 International Business Machines Corporation Highly heat conductive, flexible sheet
JP4565573B2 (ja) * 2006-09-07 2010-10-20 株式会社フューチャービジョン 液晶表示パネルの製造方法
JP5181587B2 (ja) * 2006-09-29 2013-04-10 大日本印刷株式会社 有機半導体素子およびその製造方法、有機トランジスタアレイ、およびディスプレイ
KR101485926B1 (ko) * 2007-02-02 2015-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치
KR20160040319A (ko) * 2007-10-01 2016-04-12 씬 필름 일렉트로닉스 에이에스에이 전기 활성 디바이스 및 그 제조 방법
US20090090915A1 (en) 2007-10-05 2009-04-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
JP2009119395A (ja) * 2007-11-16 2009-06-04 Dainippon Screen Mfg Co Ltd 塗布システムおよび塗布方法
TWI508282B (zh) * 2008-08-08 2015-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP5651961B2 (ja) * 2010-02-03 2015-01-14 ソニー株式会社 薄膜トランジスタおよびその製造方法、ならびに電子機器
JP5771417B2 (ja) * 2010-03-26 2015-08-26 株式会社半導体エネルギー研究所 リチウム二次電池の電極の作製方法及びリチウムイオンキャパシタの電極の作製方法
US9437454B2 (en) * 2010-06-29 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
CN103299431B (zh) * 2011-01-13 2016-06-15 夏普株式会社 半导体装置
KR101835005B1 (ko) * 2011-04-08 2018-03-07 삼성전자주식회사 반도체소자 및 그 제조방법
KR101947166B1 (ko) * 2012-11-19 2019-02-13 삼성디스플레이 주식회사 기판 및 상기 기판을 포함하는 표시장치
US9425090B2 (en) * 2014-09-19 2016-08-23 Infineon Technologies Austria Ag Method of electrodepositing gold on a copper seed layer to form a gold metallization structure
CN104409509A (zh) * 2014-10-20 2015-03-11 深圳市华星光电技术有限公司 薄膜晶体管
TW202129783A (zh) * 2016-08-24 2021-08-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1196803A (zh) * 1995-07-31 1998-10-21 图象探索技术公司 改进的薄膜晶体管,其制作方法及装有此薄膜晶体管的矩阵显示器

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62247569A (ja) * 1986-04-18 1987-10-28 Matsushita Electric Ind Co Ltd 半導体装置
US5132248A (en) * 1988-05-31 1992-07-21 The United States Of America As Represented By The United States Department Of Energy Direct write with microelectronic circuit fabrication
JPH0820643B2 (ja) 1989-08-29 1996-03-04 シャープ株式会社 アクティブマトリクス表示装置
JPH03159174A (ja) 1989-11-16 1991-07-09 Sanyo Electric Co Ltd 液晶表示装置
JPH06163584A (ja) 1992-11-18 1994-06-10 Nippon Sheet Glass Co Ltd 薄膜トランジスタの製造方法
JPH07333648A (ja) 1994-06-07 1995-12-22 Mitsubishi Electric Corp 液晶表示装置およびその製法
US5814834A (en) * 1995-12-04 1998-09-29 Semiconductor Energy Laboratory Co. Thin film semiconductor device
KR100241287B1 (ko) * 1996-09-10 2000-02-01 구본준 액정표시소자 제조방법
JPH10170960A (ja) 1996-12-16 1998-06-26 Casio Comput Co Ltd パターン形成方法
JPH10209463A (ja) 1997-01-27 1998-08-07 Matsushita Electric Ind Co Ltd 表示装置の配線形成方法、表示装置の製造方法、および表示装置
KR100255592B1 (ko) * 1997-03-19 2000-05-01 구본준 액정 표시 장치 구조 및 그 제조 방법
JPH1056193A (ja) 1997-05-09 1998-02-24 Semiconductor Energy Lab Co Ltd 半導体装置
US6215541B1 (en) * 1997-11-20 2001-04-10 Samsung Electronics Co., Ltd. Liquid crystal displays and manufacturing methods thereof
JPH11251259A (ja) 1998-03-04 1999-09-17 Seiko Epson Corp 半導体層への不純物の導入方法、および薄膜トランジスタ並びに半導体装置の製造方法
JP4087949B2 (ja) 1998-05-20 2008-05-21 セイコーエプソン株式会社 電気光学装置の製造方法及び電気光学装置
US6416583B1 (en) * 1998-06-19 2002-07-09 Tokyo Electron Limited Film forming apparatus and film forming method
US6555420B1 (en) * 1998-08-31 2003-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for producing semiconductor device
KR100439944B1 (ko) * 1998-12-10 2004-11-03 엘지.필립스 엘시디 주식회사 박막트랜지스터형광감지센서,센서박막트랜지스터와그제조방법
US6630274B1 (en) * 1998-12-21 2003-10-07 Seiko Epson Corporation Color filter and manufacturing method therefor
US6573964B1 (en) * 1998-12-25 2003-06-03 Fujitsu Display Technologies Corporation Multidomain vertically aligned liquid crystal display device
US6891236B1 (en) * 1999-01-14 2005-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6426595B1 (en) * 1999-02-08 2002-07-30 Sony Corporation Flat display apparatus
US6265243B1 (en) * 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
TWI243432B (en) * 1999-10-29 2005-11-11 Hitachi Ltd Semiconductor device, method of making the same and liquid crystal display device
TW473800B (en) * 1999-12-28 2002-01-21 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP3918412B2 (ja) * 2000-08-10 2007-05-23 ソニー株式会社 薄膜半導体装置及び液晶表示装置とこれらの製造方法
CN1171188C (zh) 2000-10-27 2004-10-13 友达光电股份有限公司 薄膜晶体管平面显示器及其制作方法
JP4022470B2 (ja) * 2001-02-19 2007-12-19 日本アイ・ビー・エム株式会社 薄膜トランジスタ構造の製造方法、およびディスプレイ・デバイス
JP3900248B2 (ja) 2001-03-30 2007-04-04 ハリマ化成株式会社 多層配線板およびその形成方法
JP3774638B2 (ja) 2001-04-24 2006-05-17 ハリマ化成株式会社 インクジェット印刷法を利用する回路パターンの形成方法
US6870180B2 (en) * 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
JP2003080694A (ja) 2001-06-26 2003-03-19 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
EP1416069B1 (en) 2001-08-09 2010-10-27 Asahi Kasei Kabushiki Kaisha Organic semiconductor film and method for manufacture thereof
JP2003133691A (ja) * 2001-10-22 2003-05-09 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
EP1306909A1 (en) * 2001-10-24 2003-05-02 Interuniversitair Micro-Elektronica Centrum Ambipolar organic transistors
US6911675B2 (en) * 2001-11-30 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device and manufacturing method thereof
JP2003317945A (ja) 2002-04-19 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、及び電子機器
JP3965562B2 (ja) * 2002-04-22 2007-08-29 セイコーエプソン株式会社 デバイスの製造方法、デバイス、電気光学装置及び電子機器
JP2003318401A (ja) 2002-04-22 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、表示装置、および電子機器
JP2003318193A (ja) 2002-04-22 2003-11-07 Seiko Epson Corp デバイス、その製造方法及び電子装置
KR100640210B1 (ko) * 2002-12-31 2006-10-31 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
KR100938885B1 (ko) * 2003-06-30 2010-01-27 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 제조방법
JP4586345B2 (ja) * 2003-09-17 2010-11-24 ソニー株式会社 電界効果型トランジスタ
WO2005048222A1 (en) 2003-11-14 2005-05-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting display device, method for manufacturing the same, and tv set
CN1890698B (zh) 2003-12-02 2011-07-13 株式会社半导体能源研究所 显示器件及其制造方法和电视装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1196803A (zh) * 1995-07-31 1998-10-21 图象探索技术公司 改进的薄膜晶体管,其制作方法及装有此薄膜晶体管的矩阵显示器

Also Published As

Publication number Publication date
US8003420B2 (en) 2011-08-23
US7759735B2 (en) 2010-07-20
US20100279449A1 (en) 2010-11-04
KR101191279B1 (ko) 2012-10-16
CN1755943A (zh) 2006-04-05
TW200618306A (en) 2006-06-01
TWI430450B (zh) 2014-03-11
US20060038174A1 (en) 2006-02-23
JP2006060060A (ja) 2006-03-02
JP4628040B2 (ja) 2011-02-09
KR20060050514A (ko) 2006-05-19

Similar Documents

Publication Publication Date Title
CN1755943B (zh) 具有半导体元件的显示器件及其制造方法
CN1278429C (zh) 晶体管、集成电路、电光装置、电子设备及其制造方法
TWI548054B (zh) 顯示裝置
US6864133B2 (en) Device, method of manufacturing device, electro-optic device, and electronic equipment
US8541785B2 (en) Display device
JP4103800B2 (ja) トランジスタの製造方法
CN101345261A (zh) 薄膜晶体管及其制造方法
US20170104048A1 (en) Substrate structure
EP2327069A1 (en) Display device
TW201225280A (en) Light-scattering substrate, method of manufacturing the same, organic light-emitting display device including the same, and method of manufacturing the organic light-emitting display device
WO2008044371A1 (en) Liquid crystal display
US9786791B2 (en) Thin film transistor, array substrate and method of manufacturing the same
CN1913146A (zh) 薄膜导体及其制造方法
CN101022096A (zh) 液晶显示器的半导体结构及其制作方法
US20040178429A1 (en) Thin film transistor and method for manufacturing same
CN101236973B (zh) 半导体装置以及其制造方法
CN1841779B (zh) 薄膜晶体管、薄膜晶体管阵列面板及其制造方法
JP2004304022A (ja) トランジスタの製造方法、トランジスタ、トランジスタを用いた集積回路、電気光学装置及び電子機器
US11869904B2 (en) Array substrate, method for fabricating same, and display device
JP3197723B2 (ja) 液晶表示装置
JP4341255B2 (ja) トランジスタの製造方法、電気光学装置の製造方法、及び電子機器の製造方法
CN1889232A (zh) 多晶硅的制造方法
CN1588630A (zh) 薄膜晶体管及其电路的制作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100512

Termination date: 20180819