CN1540762A - 具有沟槽型选择栅极的快闪存储器及制造方法 - Google Patents
具有沟槽型选择栅极的快闪存储器及制造方法 Download PDFInfo
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
模式 | 控制栅极 | 选择栅极 | 位线 | 源极 | ||||
选择 | 未选择 | 选择 | 未选择 | 选择 | 未选择 | 选择 | 未选择 | |
擦除 | -7到-12 | 0 | 3-7 | 0 | 浮置 | 浮置 | 浮置 | 浮置 |
编程 | 7-12 | 0 | 1.5-3 | 0 | 0 | 1-3 | 4-8 | 0 |
读取 | 1-3 | 1-3 | 3-5 | 0 | 1.5-3 | 0 | 0 | 0 |
模式 | 控制栅极 | 位线 | 源极选择栅极 | 源极 | ||||
选择 | 未选择 | 选择 | 未选择 | 选择 | 未选择 | 选择 | 未选择 | |
擦除 | -7到-12 | 0 | 浮置 | 浮置 | 3-7 | 浮置 | 浮置 | 浮置 |
编程 | 7-12 | -5到-7 | 4-8 | 0 | 3-5 | 0 | 1.5-3 | 1-3 |
读取 | 1-3 | -5到-7 | 0 | 0 | 3-5 | 0 | 1.5-3 | 0 |
模式 | 控制栅极 | 位线漏极选择栅极 | 位线漏极 | 位线源极选择栅极 | 位线漏极 | |||||
选择 | 未选择 | 选择 | 未选择 | 选择 | 未选择 | 选择 | 未选择 | 选择 | 未选择 | |
擦除 | -7到-12 | 0 | 3-7 | 0 | 浮置 | 浮置 | 3-7 | 0 | 浮置 | 浮置 |
编程 | 7-12 | -5到-7 | 1.5-3 | 0 | 0 | 0 | 4-8 | 0 | 4-8 | 0 |
读取 | 1-3 | -5到-7 | 3-5 | 0 | 1.5-3 | 0 | 3-5 | 0 | 0 | 0 |
Claims (63)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/336,639 | 2003-01-02 | ||
US10/336639 | 2003-01-02 | ||
US10/336,639 US6894339B2 (en) | 2003-01-02 | 2003-01-02 | Flash memory with trench select gate and fabrication process |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1540762A true CN1540762A (zh) | 2004-10-27 |
CN1540762B CN1540762B (zh) | 2012-05-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004100058136A Expired - Lifetime CN1540762B (zh) | 2003-01-02 | 2004-01-02 | 具有沟槽型选择栅极的快闪存储器及制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US6894339B2 (zh) |
CN (1) | CN1540762B (zh) |
TW (1) | TWI244200B (zh) |
Cited By (22)
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CN100380628C (zh) * | 2005-04-18 | 2008-04-09 | 力晶半导体股份有限公司 | 半导体元件的制造方法以及插塞的制造方法 |
CN101572243A (zh) * | 2009-02-06 | 2009-11-04 | 上海宏力半导体制造有限公司 | 自对准侧壁多晶硅导线制造方法及使用该方法制造的导线 |
CN101794785A (zh) * | 2008-12-31 | 2010-08-04 | 东部高科股份有限公司 | 闪存器及其制造方法 |
US7807526B2 (en) | 2005-04-12 | 2010-10-05 | International Business Machines Corporation | Method of fabricating high-density, trench-based non-volatile random access SONOS memory cells for SOC applications |
CN101752385B (zh) * | 2008-12-03 | 2011-12-28 | 超捷公司 | 具有埋置的选择栅的非易失性存储器单元及其制造方法 |
US8120095B2 (en) | 2007-12-13 | 2012-02-21 | International Business Machines Corporation | High-density, trench-based non-volatile random access SONOS memory SOC applications |
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US6894339B2 (en) | 2005-05-17 |
CN1540762B (zh) | 2012-05-16 |
US20050146937A1 (en) | 2005-07-07 |
US7037787B2 (en) | 2006-05-02 |
TWI244200B (en) | 2005-11-21 |
US20040130947A1 (en) | 2004-07-08 |
TW200507248A (en) | 2005-02-16 |
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