FR3025353B1 - Memoire non volatile composite a effacement par page ou par mot - Google Patents

Memoire non volatile composite a effacement par page ou par mot

Info

Publication number
FR3025353B1
FR3025353B1 FR1458239A FR1458239A FR3025353B1 FR 3025353 B1 FR3025353 B1 FR 3025353B1 FR 1458239 A FR1458239 A FR 1458239A FR 1458239 A FR1458239 A FR 1458239A FR 3025353 B1 FR3025353 B1 FR 3025353B1
Authority
FR
France
Prior art keywords
erase
word
page
composite memory
volatile composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1458239A
Other languages
English (en)
Other versions
FR3025353A1 (fr
Inventor
Rosa Francesco La
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1458239A priority Critical patent/FR3025353B1/fr
Priority to US14/795,742 priority patent/US9460798B2/en
Priority to CN201510459611.7A priority patent/CN105390154B/zh
Priority to CN201520565163.4U priority patent/CN204991153U/zh
Publication of FR3025353A1 publication Critical patent/FR3025353A1/fr
Application granted granted Critical
Publication of FR3025353B1 publication Critical patent/FR3025353B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
FR1458239A 2014-09-03 2014-09-03 Memoire non volatile composite a effacement par page ou par mot Expired - Fee Related FR3025353B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1458239A FR3025353B1 (fr) 2014-09-03 2014-09-03 Memoire non volatile composite a effacement par page ou par mot
US14/795,742 US9460798B2 (en) 2014-09-03 2015-07-09 Page or word-erasable composite non-volatile memory
CN201510459611.7A CN105390154B (zh) 2014-09-03 2015-07-30 页或字可擦除复合非易失性存储器
CN201520565163.4U CN204991153U (zh) 2014-09-03 2015-07-30 存储器单元和非易失性存储器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1458239A FR3025353B1 (fr) 2014-09-03 2014-09-03 Memoire non volatile composite a effacement par page ou par mot

Publications (2)

Publication Number Publication Date
FR3025353A1 FR3025353A1 (fr) 2016-03-04
FR3025353B1 true FR3025353B1 (fr) 2016-09-09

Family

ID=51688349

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1458239A Expired - Fee Related FR3025353B1 (fr) 2014-09-03 2014-09-03 Memoire non volatile composite a effacement par page ou par mot

Country Status (3)

Country Link
US (1) US9460798B2 (fr)
CN (2) CN204991153U (fr)
FR (1) FR3025353B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3025353B1 (fr) * 2014-09-03 2016-09-09 Stmicroelectronics Rousset Memoire non volatile composite a effacement par page ou par mot
TWI607445B (zh) * 2016-03-28 2017-12-01 卡比科技有限公司 非揮發性記憶體裝置及其運作方法
US10478893B1 (en) 2017-01-13 2019-11-19 General Electric Company Additive manufacturing using a selective recoater
CN107393925A (zh) * 2017-08-09 2017-11-24 上海华虹宏力半导体制造有限公司 闪存及闪存的制备方法
FR3070537A1 (fr) * 2017-08-28 2019-03-01 Stmicroelectronics (Rousset) Sas Memoire non-volatile a encombrement restreint
US10847225B2 (en) * 2018-06-20 2020-11-24 Microchip Technology Incorporated Split-gate flash memory cell with improved read performance
CN112786602B (zh) * 2019-11-06 2022-08-26 成都锐成芯微科技股份有限公司 单层多晶硅非易失性存储单元及其存储器
CN111192616B (zh) * 2020-04-14 2020-10-02 深圳市芯天下技术有限公司 Nor flash芯片及在其擦除过程中消除过擦除的方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182725A (en) 1987-11-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistor and operating method therefor
US6433382B1 (en) 1995-04-06 2002-08-13 Motorola, Inc. Split-gate vertically oriented EEPROM device and process
TW546778B (en) 2001-04-20 2003-08-11 Koninkl Philips Electronics Nv Two-transistor flash cell
FR2844090A1 (fr) 2002-08-27 2004-03-05 St Microelectronics Sa Cellule memoire pour registre non volatile a lecture rapide
US6788576B2 (en) * 2002-10-28 2004-09-07 Tower Semiconductor Ltd. Complementary non-volatile memory cell
US6894339B2 (en) 2003-01-02 2005-05-17 Actrans System Inc. Flash memory with trench select gate and fabrication process
US7358134B2 (en) 2003-09-15 2008-04-15 Powerchip Semiconductor Corp. Split gate flash memory cell and manufacturing method thereof
US7126188B2 (en) 2004-05-27 2006-10-24 Skymedi Corporation Vertical split gate memory cell and manufacturing method thereof
US8139408B2 (en) 2006-09-05 2012-03-20 Semiconductor Components Industries, L.L.C. Scalable electrically eraseable and programmable memory
US7696044B2 (en) 2006-09-19 2010-04-13 Sandisk Corporation Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7723774B2 (en) 2007-07-10 2010-05-25 Silicon Storage Technology, Inc. Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufacture
US7800159B2 (en) 2007-10-24 2010-09-21 Silicon Storage Technology, Inc. Array of contactless non-volatile memory cells
US8072811B2 (en) 2008-05-07 2011-12-06 Aplus Flash Technology, Inc, NAND based NMOS NOR flash memory cell, a NAND based NMOS NOR flash memory array, and a method of forming a NAND based NMOS NOR flash memory array
KR20100115612A (ko) 2009-04-20 2010-10-28 삼성전자주식회사 프로그램 디스터브를 줄일 수 있는 비휘발성 반도체 메모리 장치 및 이 장치의 프로그램 방법
US20110199830A1 (en) * 2010-02-12 2011-08-18 Peter Wung Lee Flotox-based, bit-alterable, combo flash and eeprom memory
US8958245B2 (en) 2010-06-17 2015-02-17 Ememory Technology Inc. Logic-based multiple time programming memory cell compatible with generic CMOS processes
KR101187641B1 (ko) * 2011-03-04 2012-10-08 에스케이하이닉스 주식회사 비휘발성 메모리 장치, 그 제조 방법, 및 그 동작 방법
WO2013079020A1 (fr) * 2011-12-02 2013-06-06 Tsinghua University Structure matricielle de mémoire flash non-ou, mémoire flash non volatile mélangée, et système de mémoire comprenant ces mémoires
US8901634B2 (en) * 2012-03-05 2014-12-02 Stmicroelectronics (Rousset) Sas Nonvolatile memory cells with a vertical selection gate of variable depth
FR2987696B1 (fr) 2012-03-05 2014-11-21 St Microelectronics Rousset Procede de lecture ecriture de cellules memoire non volatiles
JP5972700B2 (ja) 2012-07-31 2016-08-17 ルネサスエレクトロニクス株式会社 メモリ装置
US20140198583A1 (en) 2013-01-17 2014-07-17 Infineon Technologies Ag Method and System for Reducing the Size of Nonvolatile Memories
TW201508753A (zh) 2013-08-29 2015-03-01 Chrong-Jung Lin 記憶體元件、記憶體陣列與其操作方法
FR3021803B1 (fr) * 2014-05-28 2017-10-13 Stmicroelectronics Rousset Cellules memoire jumelles accessibles individuellement en lecture
FR3021804B1 (fr) * 2014-05-28 2017-09-01 Stmicroelectronics Rousset Cellule memoire non volatile duale comprenant un transistor d'effacement
FR3025353B1 (fr) * 2014-09-03 2016-09-09 Stmicroelectronics Rousset Memoire non volatile composite a effacement par page ou par mot

Also Published As

Publication number Publication date
FR3025353A1 (fr) 2016-03-04
US9460798B2 (en) 2016-10-04
CN105390154B (zh) 2019-05-07
US20160064089A1 (en) 2016-03-03
CN105390154A (zh) 2016-03-09
CN204991153U (zh) 2016-01-20

Similar Documents

Publication Publication Date Title
FR3025353B1 (fr) Memoire non volatile composite a effacement par page ou par mot
FR3009421B1 (fr) Cellule memoire non volatile
FR3024228B1 (fr) Structure deployable a metre-ruban
DK2994644T3 (da) Pumpearrangement med et glidelejearrangement.
FR3008219B1 (fr) Dispositif a memoire non volatile
BR112016017107A2 (pt) absorção / destilação em um desenho de coluna único.
FR3021804B1 (fr) Cellule memoire non volatile duale comprenant un transistor d'effacement
FR3020712B1 (fr) Compteur bidirectionnel en memoire flash
IL250300A0 (en) Write operations to non-volatile memory
BR112017006123A2 (pt) emulsões o/a
DK3719444T3 (da) Reflekterende boble- vaterpas
FR3029000B1 (fr) Dispositif de memoire non volatile compact
GB2525713B (en) Memory subsystem with wrapped-to-continuous read
FR3054920B1 (fr) Dispositif compact de memoire non volatile
BR112017005751A2 (pt) emulsões o/a
FR3046841B1 (fr) Couplemetre a torsion
FR3016724B1 (fr) Memoire non volatile multiport
DK3380427T3 (da) Godshåndteringskøretøj
FR3024272B1 (fr) Memoire non volatile a resistance programmable
FR3024480B1 (fr) Element de structure a precontrainte anticipee
FR3012655B1 (fr) Compteur en memoire flash
FR3019849B1 (fr) Coffre-fort a presentoir a securite renforcee
DE112017001093A5 (de) Bauelement im system aigalnn mit einem tunnelübergang
DE102016105487A8 (de) Wellschlauch mit einem haltering
DK3012381T3 (da) Vindue beregnet til indbygning i et tag

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20160304

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

ST Notification of lapse

Effective date: 20210506