CN1535300A - 硅氧烷树脂 - Google Patents

硅氧烷树脂 Download PDF

Info

Publication number
CN1535300A
CN1535300A CNA028146980A CN02814698A CN1535300A CN 1535300 A CN1535300 A CN 1535300A CN A028146980 A CNA028146980 A CN A028146980A CN 02814698 A CN02814698 A CN 02814698A CN 1535300 A CN1535300 A CN 1535300A
Authority
CN
China
Prior art keywords
silicone resin
sio
resin
coating
carbon atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA028146980A
Other languages
English (en)
Chinese (zh)
Inventor
R
R·波斯沃特
D·布亚尔斯克
K·苏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of CN1535300A publication Critical patent/CN1535300A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249987—With nonvoid component of specified composition
    • Y10T428/24999—Inorganic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
CNA028146980A 2001-07-26 2002-07-16 硅氧烷树脂 Pending CN1535300A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/915,902 2001-07-26
US09/915,902 US6872456B2 (en) 2001-07-26 2001-07-26 Siloxane resins

Publications (1)

Publication Number Publication Date
CN1535300A true CN1535300A (zh) 2004-10-06

Family

ID=25436405

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA028146980A Pending CN1535300A (zh) 2001-07-26 2002-07-16 硅氧烷树脂

Country Status (9)

Country Link
US (1) US6872456B2 (ko)
EP (1) EP1412434B1 (ko)
JP (1) JP4411067B2 (ko)
KR (1) KR20040023683A (ko)
CN (1) CN1535300A (ko)
AT (1) ATE399822T1 (ko)
DE (1) DE60227373D1 (ko)
TW (1) TW593548B (ko)
WO (1) WO2003010246A1 (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101945880A (zh) * 2008-02-20 2011-01-12 瓦克化学股份公司 可固化聚合物混合物
CN101048704B (zh) * 2004-11-02 2011-04-13 陶氏康宁公司 抗蚀剂组合物
CN101501139B (zh) * 2006-08-04 2011-08-17 陶氏康宁公司 硅氧烷树脂和硅氧烷组合物
CN103534296A (zh) * 2011-05-11 2014-01-22 汉高股份有限公司 具有改善的阻隔性的聚硅氧烷树脂

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7404990B2 (en) * 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
US6940173B2 (en) * 2003-01-29 2005-09-06 International Business Machines Corporation Interconnect structures incorporating low-k dielectric barrier films
TW200628981A (en) 2004-09-29 2006-08-16 Sumitomo Bakelite Co Semiconductor device
TWI434891B (zh) * 2007-02-22 2014-04-21 Silecs Oy 積體電路用高矽含量矽氧烷聚合物
JP2010519398A (ja) * 2007-02-27 2010-06-03 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション ケイ素に基づく反射防止膜用組成物
US20100291475A1 (en) * 2009-05-12 2010-11-18 Chenghong Li Silicone Coating Compositions
US20110111239A1 (en) * 2009-11-10 2011-05-12 Hemant Dandekar Sol-gel coating for steel and cast iron substrates and methods of making and using same
CN109054560A (zh) * 2018-08-07 2018-12-21 常州工程职业技术学院 一种电工钢用绝缘涂料

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
US3730743A (en) * 1970-08-24 1973-05-01 Stauffer Chemical Co Zinc dust coating composition
US3965136A (en) * 1975-09-24 1976-06-22 Olin Corporation Alkoxysilane cluster compounds and their preparation
US4329485A (en) * 1981-06-29 1982-05-11 Olin Corporation Process for preparing alkoxysilane cluster compounds by reacting a trialkoxysilanol with a triamidosilane
US4756977A (en) 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
JP3134297B2 (ja) * 1990-08-29 2001-02-13 日立化成工業株式会社 シリカ系被膜形成用塗布液およびシリカ系被膜の製造法
JP2669988B2 (ja) * 1992-02-06 1997-10-29 沖電気工業株式会社 ポリ（アルコキシシロキサン）の製造方法
JP2726363B2 (ja) 1992-06-03 1998-03-11 沖電気工業株式会社 シリコーン樹脂及びこれを用いた組成物
JPH06326202A (ja) * 1993-03-16 1994-11-25 Showa Denko Kk 半導体及びその絶縁膜または平坦化膜の形成方法
TW257785B (ko) 1993-05-17 1995-09-21 Dow Corning
JP2893104B2 (ja) * 1994-03-14 1999-05-17 直弘 曽我 有機官能基の結合した無機系多孔質体の製造方法
JP3445831B2 (ja) * 1994-06-28 2003-09-08 ジーイー東芝シリコーン株式会社 シリコーン樹脂組成物
JP3435325B2 (ja) 1997-02-13 2003-08-11 株式会社東芝 低誘電率珪素酸化膜の形成方法
US6048804A (en) 1997-04-29 2000-04-11 Alliedsignal Inc. Process for producing nanoporous silica thin films
JPH1121510A (ja) * 1997-06-30 1999-01-26 Dow Corning Asia Ltd 撥水性被膜形成用シリコーンレジン及びその組成物
EP0997497B1 (en) 1997-07-15 2004-10-27 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
JP4025389B2 (ja) * 1997-07-15 2007-12-19 旭化成株式会社 有機−無機複合体および無機多孔質体
US6231989B1 (en) 1998-11-20 2001-05-15 Dow Corning Corporation Method of forming coatings
JP3733824B2 (ja) * 1999-08-12 2006-01-11 Ｊｓｒ株式会社 シリカ系被膜形成用塗布液の製造方法
US6197913B1 (en) 1999-08-26 2001-03-06 Dow Corning Corporation Method for making microporous silicone resins with narrow pore-size distributions
JP2001115021A (ja) * 1999-10-18 2001-04-24 Asahi Kasei Corp シリカ前駆体／有機ポリマー組成物
US6359096B1 (en) 1999-10-25 2002-03-19 Dow Corning Corporation Silicone resin compositions having good solution solubility and stability
US6232424B1 (en) 1999-12-13 2001-05-15 Dow Corning Corporation Soluble silicone resin compositions having good solution stability
DE60025872T2 (de) 1999-10-25 2006-08-17 Dow Corning Corp., Midland Lösliche Siliconharzzusammensetzungen
US6313045B1 (en) 1999-12-13 2001-11-06 Dow Corning Corporation Nanoporous silicone resins having low dielectric constants and method for preparation
US6143360A (en) 1999-12-13 2000-11-07 Dow Corning Corporation Method for making nanoporous silicone resins from alkylydridosiloxane resins

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101048704B (zh) * 2004-11-02 2011-04-13 陶氏康宁公司 抗蚀剂组合物
CN101501139B (zh) * 2006-08-04 2011-08-17 陶氏康宁公司 硅氧烷树脂和硅氧烷组合物
CN101945880A (zh) * 2008-02-20 2011-01-12 瓦克化学股份公司 可固化聚合物混合物
CN103534296A (zh) * 2011-05-11 2014-01-22 汉高股份有限公司 具有改善的阻隔性的聚硅氧烷树脂

Also Published As

Publication number Publication date
KR20040023683A (ko) 2004-03-18
DE60227373D1 (de) 2008-08-14
JP2004536924A (ja) 2004-12-09
US20030087082A1 (en) 2003-05-08
ATE399822T1 (de) 2008-07-15
JP4411067B2 (ja) 2010-02-10
EP1412434B1 (en) 2008-07-02
WO2003010246A1 (en) 2003-02-06
EP1412434A1 (en) 2004-04-28
US6872456B2 (en) 2005-03-29
TW593548B (en) 2004-06-21

Similar Documents

Publication Publication Date Title
JP4125637B2 (ja) 低誘電率材料及びその製造方法
KR100334150B1 (ko) 절연 박막 제조용 알콕시실란/유기 중합체 조성물 및 이의용도
CN1160767C (zh) 纳米多孔二氧化硅的蒸气沉积工艺
CN1146965C (zh) 硅烷基多纳米孔隙二氧化硅薄膜
US6596404B1 (en) Siloxane resins
CN100474530C (zh) 改性多孔质二氧化硅膜的制法、由该制法所得改性多孔质二氧化硅膜及含该膜的半导体装置
CN1285837A (zh) 用于生产多纳孔二氧化硅薄膜的醇基处理器
CN1669130A (zh) 用于低介电常数材料的夹层增粘剂
CN1355858A (zh) 由聚合物的分解获得的低介电纳米孔材料
JP2002363285A (ja) シロキサン系樹脂およびこれを用いた半導体層間絶縁膜の形成方法
CN1680466A (zh) 用多面体分子倍半硅氧烷，形成半导体器件用层间电介质膜的方法
CN1535300A (zh) 硅氧烷树脂
WO2004026765A1 (ja) 多孔質フィルムの改質方法及び改質された多孔質フィルム並びにその用途
CN1576297A (zh) 硅氧烷基树脂及用其制造的半导体的层间绝缘膜
CN1572816A (zh) 硅氧烷基的树脂和使用其制造的半导体器件的层间绝缘膜
US7357961B2 (en) Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
CN1759135A (zh) 有机硅氧烷树脂以及使用该有机硅氧烷树脂的绝缘膜
JP2001287910A (ja) 多孔質ケイ素酸化物塗膜の製造方法
JP4261297B2 (ja) 多孔質フィルムの改質方法、改質された多孔質フィルム及びその用途
EP1566417B1 (en) Composition for porous film formation, porous film, process for producing the same, interlayer insulation film and semiconductor device
CN1535301A (zh) 硅氧烷树脂
JP2000340651A (ja) 低誘電率膜の製造法
JP2004210579A (ja) 多孔質シリカフィルムの製造方法、該方法により得られた多孔質シリカフィルム、並びにそれからなる半導体装置
KR101224514B1 (ko) 환형 실세스퀴옥산을 이용한 실록산계 저유전막 및 이의 제조방법
JP4734815B2 (ja) 組成物、その組成物を用いた低誘電率膜の形成方法、低誘電率膜及びその低誘電率膜を有する電子部品

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned
C20 Patent right or utility model deemed to be abandoned or is abandoned