CN1466765A - 可写的跟踪单元 - Google Patents
可写的跟踪单元 Download PDFInfo
- Publication number
- CN1466765A CN1466765A CNA018164498A CN01816449A CN1466765A CN 1466765 A CN1466765 A CN 1466765A CN A018164498 A CNA018164498 A CN A018164498A CN 01816449 A CN01816449 A CN 01816449A CN 1466765 A CN1466765 A CN 1466765A
- Authority
- CN
- China
- Prior art keywords
- tracking cell
- tracking
- storage unit
- state memory
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims abstract description 95
- 210000004027 cell Anatomy 0.000 claims description 394
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 14
- 238000012935 Averaging Methods 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 9
- 230000009466 transformation Effects 0.000 claims description 9
- 230000006399 behavior Effects 0.000 claims description 8
- 238000004422 calculation algorithm Methods 0.000 claims description 6
- 238000004321 preservation Methods 0.000 claims description 6
- 238000013519 translation Methods 0.000 claims description 6
- 230000004069 differentiation Effects 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 5
- 238000012795 verification Methods 0.000 claims description 5
- 210000003850 cellular structure Anatomy 0.000 claims 2
- 230000001351 cycling effect Effects 0.000 claims 2
- 238000006386 neutralization reaction Methods 0.000 claims 1
- 230000000875 corresponding effect Effects 0.000 description 32
- 238000001514 detection method Methods 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000004088 simulation Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 238000007667 floating Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 3
- 230000008672 reprogramming Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010561 standard procedure Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000013101 initial test Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 230000004304 visual acuity Effects 0.000 description 2
- 241000271566 Aves Species 0.000 description 1
- 241001269238 Data Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 210000004392 genitalia Anatomy 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 210000001138 tear Anatomy 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Diaphragms For Electromechanical Transducers (AREA)
- Heat Sensitive Colour Forming Recording (AREA)
Abstract
Description
Claims (129)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/671,793 US6538922B1 (en) | 2000-09-27 | 2000-09-27 | Writable tracking cells |
US09/671,793 | 2000-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1466765A true CN1466765A (zh) | 2004-01-07 |
CN1273992C CN1273992C (zh) | 2006-09-06 |
Family
ID=24695908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018164498A Expired - Lifetime CN1273992C (zh) | 2000-09-27 | 2001-09-25 | 可写的跟踪单元 |
Country Status (10)
Country | Link |
---|---|
US (3) | US6538922B1 (zh) |
EP (2) | EP1624461B1 (zh) |
JP (1) | JP2004510286A (zh) |
KR (1) | KR100760886B1 (zh) |
CN (1) | CN1273992C (zh) |
AT (1) | ATE370498T1 (zh) |
AU (1) | AU2001294743A1 (zh) |
DE (1) | DE60130012T2 (zh) |
TW (1) | TW561480B (zh) |
WO (1) | WO2002027729A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1853239B (zh) * | 2003-07-29 | 2012-02-29 | 桑迪士克股份有限公司 | 检测过度编程的存储器 |
CN1877741B (zh) * | 2005-06-10 | 2012-05-23 | 旺宏电子股份有限公司 | 分析多位存储单元的临界状态相互作用的方法 |
CN111445941A (zh) * | 2013-02-10 | 2020-07-24 | 希捷科技有限公司 | 基于保留漂移历史的非易失性存储器读取阈值最优化 |
Families Citing this family (159)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6747892B2 (en) | 2000-11-21 | 2004-06-08 | Sandisk Corporation | Sense amplifier for multilevel non-volatile integrated memory devices |
TW559814B (en) * | 2001-05-31 | 2003-11-01 | Semiconductor Energy Lab | Nonvolatile memory and method of driving the same |
US6678192B2 (en) * | 2001-11-02 | 2004-01-13 | Sandisk Corporation | Error management for writable tracking storage units |
JP3796457B2 (ja) * | 2002-02-28 | 2006-07-12 | 富士通株式会社 | 不揮発性半導体記憶装置 |
US6690602B1 (en) | 2002-04-08 | 2004-02-10 | Advanced Micro Devices, Inc. | Algorithm dynamic reference programming |
US6618297B1 (en) * | 2002-08-02 | 2003-09-09 | Atmel Corporation | Method of establishing reference levels for sensing multilevel memory cell states |
US6963505B2 (en) * | 2002-10-29 | 2005-11-08 | Aifun Semiconductors Ltd. | Method circuit and system for determining a reference voltage |
JP4113423B2 (ja) * | 2002-12-04 | 2008-07-09 | シャープ株式会社 | 半導体記憶装置及びリファレンスセルの補正方法 |
US7073103B2 (en) * | 2002-12-05 | 2006-07-04 | Sandisk Corporation | Smart verify for multi-state memories |
JP4067956B2 (ja) * | 2002-12-20 | 2008-03-26 | スパンション エルエルシー | 不揮発性メモリの制御方法及び不揮発性メモリ |
US6956768B2 (en) * | 2003-04-15 | 2005-10-18 | Advanced Micro Devices, Inc. | Method of programming dual cell memory device to store multiple data states per cell |
US7237074B2 (en) * | 2003-06-13 | 2007-06-26 | Sandisk Corporation | Tracking cells for a memory system |
US7324374B2 (en) * | 2003-06-20 | 2008-01-29 | Spansion Llc | Memory with a core-based virtual ground and dynamic reference sensing scheme |
EP2113844A1 (en) * | 2003-07-30 | 2009-11-04 | SanDisk IL Ltd. | Method and system for optimizing reliability and performance of programming data in non-volatile memory devices |
US7301807B2 (en) * | 2003-10-23 | 2007-11-27 | Sandisk Corporation | Writable tracking cells |
US6961279B2 (en) * | 2004-03-10 | 2005-11-01 | Linear Technology Corporation | Floating gate nonvolatile memory circuits and methods |
US7817469B2 (en) * | 2004-07-26 | 2010-10-19 | Sandisk Il Ltd. | Drift compensation in a flash memory |
US7957189B2 (en) * | 2004-07-26 | 2011-06-07 | Sandisk Il Ltd. | Drift compensation in a flash memory |
US7257025B2 (en) * | 2004-12-09 | 2007-08-14 | Saifun Semiconductors Ltd | Method for reading non-volatile memory cells |
CN100466105C (zh) * | 2005-06-14 | 2009-03-04 | 旺宏电子股份有限公司 | 氮化硅只读存储单元的位的读取方法 |
US7366022B2 (en) * | 2005-10-27 | 2008-04-29 | Sandisk Corporation | Apparatus for programming of multi-state non-volatile memory using smart verify |
US7301817B2 (en) | 2005-10-27 | 2007-11-27 | Sandisk Corporation | Method for programming of multi-state non-volatile memory using smart verify |
US8725929B1 (en) | 2006-11-06 | 2014-05-13 | Marvell World Trade Ltd. | Adaptive read and write systems and methods for memory cells |
US8645793B2 (en) | 2008-06-03 | 2014-02-04 | Marvell International Ltd. | Statistical tracking for flash memory |
WO2007132457A2 (en) * | 2006-05-12 | 2007-11-22 | Anobit Technologies Ltd. | Combined distortion estimation and error correction coding for memory devices |
US7697326B2 (en) * | 2006-05-12 | 2010-04-13 | Anobit Technologies Ltd. | Reducing programming error in memory devices |
WO2007132456A2 (en) * | 2006-05-12 | 2007-11-22 | Anobit Technologies Ltd. | Memory device with adaptive capacity |
CN103208309B (zh) | 2006-05-12 | 2016-03-09 | 苹果公司 | 存储设备中的失真估计和消除 |
US7639531B2 (en) | 2006-05-15 | 2009-12-29 | Apple Inc. | Dynamic cell bit resolution |
US8000134B2 (en) | 2006-05-15 | 2011-08-16 | Apple Inc. | Off-die charge pump that supplies multiple flash devices |
US7568135B2 (en) | 2006-05-15 | 2009-07-28 | Apple Inc. | Use of alternative value in cell detection |
US7852690B2 (en) | 2006-05-15 | 2010-12-14 | Apple Inc. | Multi-chip package for a flash memory |
US7511646B2 (en) | 2006-05-15 | 2009-03-31 | Apple Inc. | Use of 8-bit or higher A/D for NAND cell value |
US7701797B2 (en) | 2006-05-15 | 2010-04-20 | Apple Inc. | Two levels of voltage regulation supplied for logic and data programming voltage of a memory device |
US7613043B2 (en) | 2006-05-15 | 2009-11-03 | Apple Inc. | Shifting reference values to account for voltage sag |
US7639542B2 (en) | 2006-05-15 | 2009-12-29 | Apple Inc. | Maintenance operations for multi-level data storage cells |
US20070266296A1 (en) * | 2006-05-15 | 2007-11-15 | Conley Kevin M | Nonvolatile Memory with Convolutional Coding |
US7551486B2 (en) | 2006-05-15 | 2009-06-23 | Apple Inc. | Iterative memory cell charging based on reference cell value |
US7840875B2 (en) * | 2006-05-15 | 2010-11-23 | Sandisk Corporation | Convolutional coding methods for nonvolatile memory |
US7911834B2 (en) | 2006-05-15 | 2011-03-22 | Apple Inc. | Analog interface for a flash memory die |
WO2008026203A2 (en) | 2006-08-27 | 2008-03-06 | Anobit Technologies | Estimation of non-linear distortion in memory devices |
US7805663B2 (en) * | 2006-09-28 | 2010-09-28 | Sandisk Corporation | Methods of adapting operation of nonvolatile memory |
US7818653B2 (en) * | 2006-09-28 | 2010-10-19 | Sandisk Corporation | Methods of soft-input soft-output decoding for nonvolatile memory |
US7904783B2 (en) * | 2006-09-28 | 2011-03-08 | Sandisk Corporation | Soft-input soft-output decoder for nonvolatile memory |
US20080092015A1 (en) * | 2006-09-28 | 2008-04-17 | Yigal Brandman | Nonvolatile memory with adaptive operation |
WO2008053472A2 (en) * | 2006-10-30 | 2008-05-08 | Anobit Technologies Ltd. | Reading memory cells using multiple thresholds |
US7821826B2 (en) | 2006-10-30 | 2010-10-26 | Anobit Technologies, Ltd. | Memory cell readout using successive approximation |
US7904788B2 (en) * | 2006-11-03 | 2011-03-08 | Sandisk Corporation | Methods of varying read threshold voltage in nonvolatile memory |
US7558109B2 (en) * | 2006-11-03 | 2009-07-07 | Sandisk Corporation | Nonvolatile memory with variable read threshold |
US7904780B2 (en) * | 2006-11-03 | 2011-03-08 | Sandisk Corporation | Methods of modulating error correction coding |
US8001441B2 (en) * | 2006-11-03 | 2011-08-16 | Sandisk Technologies Inc. | Nonvolatile memory with modulated error correction coding |
US7941590B2 (en) * | 2006-11-06 | 2011-05-10 | Marvell World Trade Ltd. | Adaptive read and write systems and methods for memory cells |
US7924648B2 (en) | 2006-11-28 | 2011-04-12 | Anobit Technologies Ltd. | Memory power and performance management |
US8151163B2 (en) * | 2006-12-03 | 2012-04-03 | Anobit Technologies Ltd. | Automatic defect management in memory devices |
US7900102B2 (en) * | 2006-12-17 | 2011-03-01 | Anobit Technologies Ltd. | High-speed programming of memory devices |
US7593263B2 (en) * | 2006-12-17 | 2009-09-22 | Anobit Technologies Ltd. | Memory device with reduced reading latency |
US7751240B2 (en) | 2007-01-24 | 2010-07-06 | Anobit Technologies Ltd. | Memory device with negative thresholds |
US8151166B2 (en) * | 2007-01-24 | 2012-04-03 | Anobit Technologies Ltd. | Reduction of back pattern dependency effects in memory devices |
WO2008111058A2 (en) * | 2007-03-12 | 2008-09-18 | Anobit Technologies Ltd. | Adaptive estimation of memory cell read thresholds |
US7808834B1 (en) | 2007-04-13 | 2010-10-05 | Marvell International Ltd. | Incremental memory refresh |
US8001320B2 (en) * | 2007-04-22 | 2011-08-16 | Anobit Technologies Ltd. | Command interface for memory devices |
US8234545B2 (en) * | 2007-05-12 | 2012-07-31 | Apple Inc. | Data storage with incremental redundancy |
WO2008139441A2 (en) | 2007-05-12 | 2008-11-20 | Anobit Technologies Ltd. | Memory device with internal signal processing unit |
US7925936B1 (en) | 2007-07-13 | 2011-04-12 | Anobit Technologies Ltd. | Memory device with non-uniform programming levels |
US8259497B2 (en) | 2007-08-06 | 2012-09-04 | Apple Inc. | Programming schemes for multi-level analog memory cells |
US7969788B2 (en) * | 2007-08-21 | 2011-06-28 | Micron Technology, Inc. | Charge loss compensation methods and apparatus |
US8031526B1 (en) | 2007-08-23 | 2011-10-04 | Marvell International Ltd. | Write pre-compensation for nonvolatile memory |
US8189381B1 (en) | 2007-08-28 | 2012-05-29 | Marvell International Ltd. | System and method for reading flash memory cells |
US8085605B2 (en) | 2007-08-29 | 2011-12-27 | Marvell World Trade Ltd. | Sequence detection for flash memory with inter-cell interference |
JP5280027B2 (ja) * | 2007-09-18 | 2013-09-04 | スパンション エルエルシー | 半導体装置及びその制御方法 |
US8174905B2 (en) * | 2007-09-19 | 2012-05-08 | Anobit Technologies Ltd. | Programming orders for reducing distortion in arrays of multi-level analog memory cells |
US7773413B2 (en) | 2007-10-08 | 2010-08-10 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells in the presence of temperature variations |
WO2009050703A2 (en) * | 2007-10-19 | 2009-04-23 | Anobit Technologies | Data storage in analog memory cell arrays having erase failures |
US8068360B2 (en) * | 2007-10-19 | 2011-11-29 | Anobit Technologies Ltd. | Reading analog memory cells using built-in multi-threshold commands |
US8000141B1 (en) | 2007-10-19 | 2011-08-16 | Anobit Technologies Ltd. | Compensation for voltage drifts in analog memory cells |
WO2009063450A2 (en) * | 2007-11-13 | 2009-05-22 | Anobit Technologies | Optimized selection of memory units in multi-unit memory devices |
US8225181B2 (en) | 2007-11-30 | 2012-07-17 | Apple Inc. | Efficient re-read operations from memory devices |
US8209588B2 (en) * | 2007-12-12 | 2012-06-26 | Anobit Technologies Ltd. | Efficient interference cancellation in analog memory cell arrays |
US8456905B2 (en) | 2007-12-16 | 2013-06-04 | Apple Inc. | Efficient data storage in multi-plane memory devices |
US8085586B2 (en) * | 2007-12-27 | 2011-12-27 | Anobit Technologies Ltd. | Wear level estimation in analog memory cells |
US8156398B2 (en) * | 2008-02-05 | 2012-04-10 | Anobit Technologies Ltd. | Parameter estimation based on error correction code parity check equations |
US7924587B2 (en) * | 2008-02-21 | 2011-04-12 | Anobit Technologies Ltd. | Programming of analog memory cells using a single programming pulse per state transition |
US7864573B2 (en) | 2008-02-24 | 2011-01-04 | Anobit Technologies Ltd. | Programming analog memory cells for reduced variance after retention |
US8230300B2 (en) * | 2008-03-07 | 2012-07-24 | Apple Inc. | Efficient readout from analog memory cells using data compression |
US8059457B2 (en) * | 2008-03-18 | 2011-11-15 | Anobit Technologies Ltd. | Memory device with multiple-accuracy read commands |
US8400858B2 (en) | 2008-03-18 | 2013-03-19 | Apple Inc. | Memory device with reduced sense time readout |
US7924613B1 (en) | 2008-08-05 | 2011-04-12 | Anobit Technologies Ltd. | Data storage in analog memory cells with protection against programming interruption |
US7995388B1 (en) | 2008-08-05 | 2011-08-09 | Anobit Technologies Ltd. | Data storage using modified voltages |
US8949684B1 (en) | 2008-09-02 | 2015-02-03 | Apple Inc. | Segmented data storage |
US8169825B1 (en) | 2008-09-02 | 2012-05-01 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells subjected to long retention periods |
US8000135B1 (en) | 2008-09-14 | 2011-08-16 | Anobit Technologies Ltd. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
US8482978B1 (en) | 2008-09-14 | 2013-07-09 | Apple Inc. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
US8239734B1 (en) | 2008-10-15 | 2012-08-07 | Apple Inc. | Efficient data storage in storage device arrays |
US8261159B1 (en) | 2008-10-30 | 2012-09-04 | Apple, Inc. | Data scrambling schemes for memory devices |
US8208304B2 (en) * | 2008-11-16 | 2012-06-26 | Anobit Technologies Ltd. | Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N |
US8248831B2 (en) * | 2008-12-31 | 2012-08-21 | Apple Inc. | Rejuvenation of analog memory cells |
US8174857B1 (en) | 2008-12-31 | 2012-05-08 | Anobit Technologies Ltd. | Efficient readout schemes for analog memory cell devices using multiple read threshold sets |
US8924661B1 (en) | 2009-01-18 | 2014-12-30 | Apple Inc. | Memory system including a controller and processors associated with memory devices |
US8228701B2 (en) | 2009-03-01 | 2012-07-24 | Apple Inc. | Selective activation of programming schemes in analog memory cell arrays |
US8832354B2 (en) * | 2009-03-25 | 2014-09-09 | Apple Inc. | Use of host system resources by memory controller |
US8259506B1 (en) | 2009-03-25 | 2012-09-04 | Apple Inc. | Database of memory read thresholds |
US8199576B2 (en) * | 2009-04-08 | 2012-06-12 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture |
US8351236B2 (en) * | 2009-04-08 | 2013-01-08 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture |
US7983065B2 (en) * | 2009-04-08 | 2011-07-19 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines |
KR101793286B1 (ko) | 2009-04-08 | 2017-11-02 | 샌디스크 테크놀로지스 엘엘씨 | 수직의 비트 라인들 및 단면 워드 라인 아키텍처를 가지는 재프로그래밍 가능한 메모리 요소들의 3차원 어레이 |
US8238157B1 (en) | 2009-04-12 | 2012-08-07 | Apple Inc. | Selective re-programming of analog memory cells |
US8479080B1 (en) | 2009-07-12 | 2013-07-02 | Apple Inc. | Adaptive over-provisioning in memory systems |
US8495465B1 (en) | 2009-10-15 | 2013-07-23 | Apple Inc. | Error correction coding over multiple memory pages |
US8677054B1 (en) | 2009-12-16 | 2014-03-18 | Apple Inc. | Memory management schemes for non-volatile memory devices |
US8694814B1 (en) | 2010-01-10 | 2014-04-08 | Apple Inc. | Reuse of host hibernation storage space by memory controller |
US8677203B1 (en) | 2010-01-11 | 2014-03-18 | Apple Inc. | Redundant data storage schemes for multi-die memory systems |
US8446753B2 (en) * | 2010-03-25 | 2013-05-21 | Qualcomm Incorporated | Reference cell write operations at a memory |
US8694853B1 (en) | 2010-05-04 | 2014-04-08 | Apple Inc. | Read commands for reading interfering memory cells |
US8526237B2 (en) | 2010-06-08 | 2013-09-03 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof |
US8547720B2 (en) | 2010-06-08 | 2013-10-01 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines |
US8572423B1 (en) | 2010-06-22 | 2013-10-29 | Apple Inc. | Reducing peak current in memory systems |
US8595591B1 (en) | 2010-07-11 | 2013-11-26 | Apple Inc. | Interference-aware assignment of programming levels in analog memory cells |
US9104580B1 (en) | 2010-07-27 | 2015-08-11 | Apple Inc. | Cache memory for hybrid disk drives |
US8645794B1 (en) | 2010-07-31 | 2014-02-04 | Apple Inc. | Data storage in analog memory cells using a non-integer number of bits per cell |
US8856475B1 (en) | 2010-08-01 | 2014-10-07 | Apple Inc. | Efficient selection of memory blocks for compaction |
US8694854B1 (en) | 2010-08-17 | 2014-04-08 | Apple Inc. | Read threshold setting based on soft readout statistics |
US9021181B1 (en) | 2010-09-27 | 2015-04-28 | Apple Inc. | Memory management for unifying memory cell conditions by using maximum time intervals |
US8374031B2 (en) | 2010-09-29 | 2013-02-12 | SanDisk Technologies, Inc. | Techniques for the fast settling of word lines in NAND flash memory |
KR101802448B1 (ko) * | 2010-10-12 | 2017-11-28 | 삼성전자주식회사 | 상변화 메모리 장치 및 상변화 메모리 장치의 리라이트 동작 방법 |
CN104040633B (zh) | 2010-12-14 | 2017-06-13 | 桑迪士克科技有限责任公司 | 用于具有垂直位线的三维非易失性存储器的架构 |
US9227456B2 (en) | 2010-12-14 | 2016-01-05 | Sandisk 3D Llc | Memories with cylindrical read/write stacks |
US8824183B2 (en) | 2010-12-14 | 2014-09-02 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereof |
US8782495B2 (en) * | 2010-12-23 | 2014-07-15 | Sandisk Il Ltd | Non-volatile memory and methods with asymmetric soft read points around hard read points |
US8099652B1 (en) * | 2010-12-23 | 2012-01-17 | Sandisk Corporation | Non-volatile memory and methods with reading soft bits in non uniform schemes |
US8498152B2 (en) | 2010-12-23 | 2013-07-30 | Sandisk Il Ltd. | Non-volatile memory and methods with soft-bit reads while reading hard bits with compensation for coupling |
WO2012102785A2 (en) * | 2011-01-27 | 2012-08-02 | Rambus Inc. | Memory cell with multiple sense mechanisms |
US9269425B2 (en) | 2011-12-30 | 2016-02-23 | Sandisk 3D Llc | Low forming voltage non-volatile storage device |
US8842471B2 (en) | 2012-01-06 | 2014-09-23 | Sandisk Technologies Inc. | Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: program to verify transition |
US9171584B2 (en) | 2012-05-15 | 2015-10-27 | Sandisk 3D Llc | Three dimensional non-volatile storage with interleaved vertical select devices above and below vertical bit lines |
US20130336037A1 (en) | 2012-06-15 | 2013-12-19 | Sandisk 3D Llc | 3d memory having vertical switches with surround gates and method thereof |
US9281029B2 (en) | 2012-06-15 | 2016-03-08 | Sandisk 3D Llc | Non-volatile memory having 3D array architecture with bit line voltage control and methods thereof |
US9025374B2 (en) | 2012-12-13 | 2015-05-05 | Sandisk Technologies Inc. | System and method to update read voltages in a non-volatile memory in response to tracking data |
WO2014138124A1 (en) | 2013-03-04 | 2014-09-12 | Sandisk 3D Llc | Vertical bit line non-volatile memory systems and methods of fabrication |
US9064547B2 (en) | 2013-03-05 | 2015-06-23 | Sandisk 3D Llc | 3D non-volatile memory having low-current cells and methods |
US9165933B2 (en) | 2013-03-07 | 2015-10-20 | Sandisk 3D Llc | Vertical bit line TFT decoder for high voltage operation |
US9105468B2 (en) | 2013-09-06 | 2015-08-11 | Sandisk 3D Llc | Vertical bit line wide band gap TFT decoder |
US9362338B2 (en) | 2014-03-03 | 2016-06-07 | Sandisk Technologies Inc. | Vertical thin film transistors in non-volatile storage systems |
US9379246B2 (en) | 2014-03-05 | 2016-06-28 | Sandisk Technologies Inc. | Vertical thin film transistor selection devices and methods of fabrication |
US9123392B1 (en) | 2014-03-28 | 2015-09-01 | Sandisk 3D Llc | Non-volatile 3D memory with cell-selectable word line decoding |
US9627009B2 (en) | 2014-07-25 | 2017-04-18 | Sandisk Technologies Llc | Interleaved grouped word lines for three dimensional non-volatile storage |
US9443606B2 (en) | 2014-10-28 | 2016-09-13 | Sandisk Technologies Llc | Word line dependent two strobe sensing mode for nonvolatile storage elements |
US9450023B1 (en) | 2015-04-08 | 2016-09-20 | Sandisk Technologies Llc | Vertical bit line non-volatile memory with recessed word lines |
US9502123B2 (en) * | 2015-04-21 | 2016-11-22 | Sandisk Technologies Llc | Adaptive block parameters |
US9530513B1 (en) | 2015-11-25 | 2016-12-27 | Intel Corporation | Methods and apparatus to read memory cells based on clock pulse counts |
EP3443107A1 (en) | 2016-04-13 | 2019-02-20 | Synthetic Genomics, Inc. | Recombinant arterivirus replicon systems and uses thereof |
EP3526332B1 (en) | 2016-10-17 | 2024-06-26 | Janssen Pharmaceuticals, Inc. | Recombinant virus replicon systems and uses thereof |
JP2020500536A (ja) | 2016-12-05 | 2020-01-16 | シンセティック ジェノミクス インコーポレーテッド | 遺伝子発現増強のための組成物および方法 |
JP2018160303A (ja) * | 2017-03-23 | 2018-10-11 | 東芝メモリ株式会社 | 半導体記憶装置 |
EA202091513A1 (ru) | 2017-12-19 | 2020-09-09 | Янссен Сайенсиз Айрлэнд Анлимитед Компани | Вакцины против вируса гепатита b (hbv) и их применение |
EA202091516A1 (ru) | 2017-12-19 | 2020-11-03 | Янссен Сайенсиз Айрлэнд Анлимитед Компани | Способы и композиции для индукции иммунного ответа против вируса гепатита b (hbv) |
US11389531B2 (en) | 2017-12-19 | 2022-07-19 | Janssen Sciences Ireland Unlimited Company | Methods and apparatus for the delivery of hepatitis B virus (HBV) vaccines |
KR20200111729A (ko) | 2018-01-19 | 2020-09-29 | 얀센 파마슈티칼즈, 인코포레이티드 | 재조합 레플리콘 시스템을 이용한 면역 반응 유도 및 증진 |
US11556416B2 (en) | 2021-05-05 | 2023-01-17 | Apple Inc. | Controlling memory readout reliability and throughput by adjusting distance between read thresholds |
US11847342B2 (en) | 2021-07-28 | 2023-12-19 | Apple Inc. | Efficient transfer of hard data and confidence levels in reading a nonvolatile memory |
Family Cites Families (91)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1221018B (it) | 1985-03-28 | 1990-06-21 | Giulio Casagrande | Dispositivo per verificare celle di memoria in funzione del salto di soglia ottenibile in fase di scrittura |
IT1221780B (it) | 1988-01-29 | 1990-07-12 | Sgs Thomson Microelectronics | Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos |
US5268870A (en) | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Flash EEPROM system and intelligent programming and erasing methods therefor |
US5043940A (en) | 1988-06-08 | 1991-08-27 | Eliyahou Harari | Flash EEPROM memory systems having multistate storage cells |
US5095344A (en) | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
JPH0713877B2 (ja) | 1988-10-19 | 1995-02-15 | 株式会社東芝 | 半導体メモリ |
JPH0814994B2 (ja) | 1989-01-13 | 1996-02-14 | 株式会社東芝 | 半導体記憶装置 |
IT1228822B (it) | 1989-03-23 | 1991-07-04 | Sgs Thomson Microelectronics | Cella di riferimento per la lettura di dispositivi di memoria eeprom. |
US5172338B1 (en) | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
EP0392895B1 (en) | 1989-04-13 | 1995-12-13 | Sundisk Corporation | Flash EEprom system |
US5163021A (en) * | 1989-04-13 | 1992-11-10 | Sundisk Corporation | Multi-state EEprom read and write circuits and techniques |
US5293345A (en) | 1989-06-12 | 1994-03-08 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a data detection circuit with two reference potentials |
US5198997A (en) | 1989-08-11 | 1993-03-30 | Sony Corporation | Ultraviolet erasable nonvolatile memory with current mirror circuit type sense amplifier |
EP0424172B1 (en) | 1989-10-20 | 1995-01-18 | Fujitsu Limited | Nonvolatile semiconductor memory apparatus |
IT1244293B (it) | 1990-07-06 | 1994-07-08 | Sgs Thomson Microelectronics | Dispositivo di lettura per celle eprom con campo operativo indipendente dal salto di soglia delle celle scritte rispetto alle celle vergini |
IT1247650B (it) | 1990-10-31 | 1994-12-28 | Sgs Thomson Microelectronics | Memoria flash eprom con aumentata immunita' da soft programming su una linea di riferimento |
JP3454520B2 (ja) | 1990-11-30 | 2003-10-06 | インテル・コーポレーション | フラッシュ記憶装置の書込み状態を確認する回路及びその方法 |
US5287315A (en) | 1991-01-31 | 1994-02-15 | Texas Instruments Incorporated | Skewed reference to improve ones and zeros in EPROM arrays |
US6002614A (en) | 1991-02-08 | 1999-12-14 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
JP3210355B2 (ja) | 1991-03-04 | 2001-09-17 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5270979A (en) | 1991-03-15 | 1993-12-14 | Sundisk Corporation | Method for optimum erasing of EEPROM |
JPH04291940A (ja) | 1991-03-20 | 1992-10-16 | Toshiba Corp | 不揮発性メモリ |
US5142496A (en) | 1991-06-03 | 1992-08-25 | Advanced Micro Devices, Inc. | Method for measuring VT 's less than zero without applying negative voltages |
EP0526427B1 (en) | 1991-07-25 | 1997-10-15 | STMicroelectronics S.r.l. | Sense amplifier for programmable memories with a virtually enhanced source of signal |
US5430859A (en) | 1991-07-26 | 1995-07-04 | Sundisk Corporation | Solid state memory system including plural memory chips and a serialized bus |
US5361227A (en) | 1991-12-19 | 1994-11-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and memory system using the same |
US5313421A (en) | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5532962A (en) | 1992-05-20 | 1996-07-02 | Sandisk Corporation | Soft errors handling in EEPROM devices |
US5315541A (en) | 1992-07-24 | 1994-05-24 | Sundisk Corporation | Segmented column memory array |
US5386132A (en) | 1992-11-02 | 1995-01-31 | Wong; Chun C. D. | Multimedia storage system with highly compact memory device |
US5712189A (en) | 1993-04-30 | 1998-01-27 | Texas Instruments Incorporated | Epitaxial overgrowth method |
US5463586A (en) | 1993-05-28 | 1995-10-31 | Macronix International Co., Ltd. | Erase and program verification circuit for non-volatile memory |
US5608676A (en) | 1993-08-31 | 1997-03-04 | Crystal Semiconductor Corporation | Current limited current reference for non-volatile memory sensing |
US5828601A (en) | 1993-12-01 | 1998-10-27 | Advanced Micro Devices, Inc. | Programmed reference |
GB9401227D0 (en) | 1994-01-22 | 1994-03-16 | Deas Alexander R | Non-volatile digital memory device with multi-level storage cells |
JP3415254B2 (ja) | 1994-04-15 | 2003-06-09 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5608679A (en) * | 1994-06-02 | 1997-03-04 | Intel Corporation | Fast internal reference cell trimming for flash EEPROM memory |
US5493533A (en) | 1994-09-28 | 1996-02-20 | Atmel Corporation | Dual differential trans-impedance sense amplifier and method |
US5532623A (en) | 1994-10-21 | 1996-07-02 | Waferscale Integration, Inc. | Sense amplifier with read current tracking and zero standby power consumption |
US5694356A (en) * | 1994-11-02 | 1997-12-02 | Invoice Technology, Inc. | High resolution analog storage EPROM and flash EPROM |
US5684739A (en) | 1994-11-30 | 1997-11-04 | Nkk Corporation | Apparatus and method for determining current or voltage of a semiconductor device |
US5537358A (en) | 1994-12-06 | 1996-07-16 | National Semiconductor Corporation | Flash memory having adaptive sensing and method |
US5541886A (en) | 1994-12-27 | 1996-07-30 | Intel Corporation | Method and apparatus for storing control information in multi-bit non-volatile memory arrays |
US5687114A (en) * | 1995-10-06 | 1997-11-11 | Agate Semiconductor, Inc. | Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell |
US5629892A (en) | 1995-10-16 | 1997-05-13 | Advanced Micro Devices, Inc. | Flash EEPROM memory with separate reference array |
KR0172533B1 (ko) | 1995-10-18 | 1999-03-30 | 김주용 | 플래쉬 메모리 장치 |
KR0172364B1 (ko) | 1995-11-06 | 1999-03-30 | 김광호 | 불휘발성 반도체 메모리의 기준셀을 이용한 소거검증 방법 |
JPH09139089A (ja) | 1995-11-13 | 1997-05-27 | Sony Corp | 強誘電体記憶装置 |
JP3581207B2 (ja) | 1996-02-13 | 2004-10-27 | 株式会社東芝 | 不揮発性半導体メモリ |
TW338158B (en) | 1996-02-29 | 1998-08-11 | Sanyo Electric Co | Non volatile semiconductor memory device |
EP0798740B1 (en) * | 1996-03-29 | 2003-11-12 | STMicroelectronics S.r.l. | Reference system for determining the programmed/non-programmed status of a memory cell, particularly for non-volatile memories |
JPH09270195A (ja) | 1996-04-02 | 1997-10-14 | Sharp Corp | 半導体記憶装置 |
US5712815A (en) * | 1996-04-22 | 1998-01-27 | Advanced Micro Devices, Inc. | Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells |
EP0805454A1 (en) | 1996-04-30 | 1997-11-05 | STMicroelectronics S.r.l. | Sensing circuit for reading and verifying the content of a memory cell |
WO2004090908A1 (ja) | 1996-06-11 | 2004-10-21 | Nobuyoshi Takeuchi | ベリファイ機能を有する不揮発性記憶装置 |
DE69631123D1 (de) | 1996-06-18 | 2004-01-29 | St Microelectronics Srl | Verfahren und Schaltung zum Lesen von nichtflüchtigen Speicherzellen mit niedriger Versorgungsspannung |
DE69630024D1 (de) | 1996-06-18 | 2003-10-23 | St Microelectronics Srl | Nichtflüchtiger Speicher mit Einzelzellenreferenzsignalgeneratorschaltung zum Auslesen von Speicherzellen |
DE69702256T2 (de) | 1996-06-24 | 2001-01-18 | Advanced Micro Devices, Inc. | Verfahren für einen merhfachen, bits pro zelle flash eeprom, speicher mit seitenprogrammierungsmodus und leseverfahren |
WO1998003978A1 (fr) | 1996-07-18 | 1998-01-29 | Nkk Corporation | Dispositif de reference, procede de fixation d'un niveau de reference, procede d'autodiagnostic et memoire semi-conductrice non volatile |
JPH10302486A (ja) | 1996-08-30 | 1998-11-13 | Sanyo Electric Co Ltd | 半導体記憶装置 |
US5790453A (en) | 1996-10-24 | 1998-08-04 | Micron Quantum Devices, Inc. | Apparatus and method for reading state of multistate non-volatile memory cells |
JPH10134587A (ja) | 1996-10-29 | 1998-05-22 | Sony Corp | 不揮発性半導体記憶装置 |
US5774395A (en) | 1996-11-27 | 1998-06-30 | Advanced Micro Devices, Inc. | Electrically erasable reference cell for accurately determining threshold voltage of a non-volatile memory at a plurality of threshold voltage levels |
FR2760888B1 (fr) | 1997-03-11 | 1999-05-07 | Sgs Thomson Microelectronics | Circuit de lecture pour memoire adapte a la mesure des courants de fuite |
DE69723227T2 (de) | 1997-04-14 | 2004-06-03 | Stmicroelectronics S.R.L., Agrate Brianza | Hochpräzisionsanalogleseschaltkreis für Speichermatrizen, insbesondere für Flash-Analogspeichermatrizen |
JP3169858B2 (ja) | 1997-06-20 | 2001-05-28 | 日本電気アイシーマイコンシステム株式会社 | 多値型半導体記憶装置 |
JP3039458B2 (ja) | 1997-07-07 | 2000-05-08 | 日本電気株式会社 | 不揮発性半導体メモリ |
IT1293644B1 (it) | 1997-07-25 | 1999-03-08 | Sgs Thomson Microelectronics | Circuito e metodo di lettura di celle di una matrice di memoria analogica, in particolare di tipo flash |
JPH1166875A (ja) | 1997-08-18 | 1999-03-09 | Fujitsu Ltd | 半導体記憶回路 |
JP3730373B2 (ja) | 1997-09-02 | 2006-01-05 | 株式会社東芝 | 半導体記憶装置 |
JPH11213684A (ja) | 1998-01-28 | 1999-08-06 | Toshiba Corp | 不揮発性半導体メモリ |
EP0936627B1 (en) | 1998-02-13 | 2004-10-20 | STMicroelectronics S.r.l. | Low voltage non volatile memory sense amplifier |
JPH11274437A (ja) | 1998-03-26 | 1999-10-08 | Sanyo Electric Co Ltd | 不揮発性半導体メモリ装置 |
FR2778012B1 (fr) * | 1998-04-28 | 2001-09-28 | Sgs Thomson Microelectronics | Dispositif et procede de lecture de cellules de memoire eeprom |
US5966330A (en) | 1998-04-30 | 1999-10-12 | Eon Silicon Devices, Inc. | Method and apparatus for measuring the threshold voltage of flash EEPROM memory cells being applied a variable control gate bias |
EP0961285B1 (en) | 1998-05-29 | 2003-12-17 | STMicroelectronics S.r.l. | Device and method for reading nonvolatile memory cells |
DE69832164T2 (de) | 1998-08-07 | 2006-08-17 | Stmicroelectronics S.R.L., Agrate Brianza | Ausleseanordnung für Multibit-Halbleiterspeicheranordnung |
JP3588553B2 (ja) | 1998-08-13 | 2004-11-10 | 株式会社東芝 | 不揮発性半導体メモリ |
DE69828966D1 (de) | 1998-09-15 | 2005-03-17 | St Microelectronics Srl | Verfahren zum Schutz des Inhalts nichtflüchtiger Speicherzellen |
US5936906A (en) | 1998-10-29 | 1999-08-10 | Winbond Electronics Corp. | Multilevel sense device for a flash memory |
US6282145B1 (en) | 1999-01-14 | 2001-08-28 | Silicon Storage Technology, Inc. | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system |
US6094368A (en) * | 1999-03-04 | 2000-07-25 | Invox Technology | Auto-tracking write and read processes for multi-bit-per-cell non-volatile memories |
US6103573A (en) | 1999-06-30 | 2000-08-15 | Sandisk Corporation | Processing techniques for making a dual floating gate EEPROM cell array |
US6418054B1 (en) | 1999-08-31 | 2002-07-09 | Advanced Micro Devices, Inc. | Embedded methodology to program/erase reference cells used in sensing flash cells |
US6141261A (en) | 1999-12-31 | 2000-10-31 | Patti; Robert | DRAM that stores multiple bits per storage cell |
US6154392A (en) | 1999-10-12 | 2000-11-28 | Patti; Robert | Four-terminal EEPROM cell for storing an analog voltage and memory system using the same to store multiple bits per EEPROM cell |
US6373767B1 (en) | 1999-10-12 | 2002-04-16 | Robert Patti | Memory that stores multiple bits per storage cell |
US6314014B1 (en) * | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
US6426893B1 (en) * | 2000-02-17 | 2002-07-30 | Sandisk Corporation | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
US6512263B1 (en) * | 2000-09-22 | 2003-01-28 | Sandisk Corporation | Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming |
-
2000
- 2000-09-27 US US09/671,793 patent/US6538922B1/en not_active Expired - Lifetime
-
2001
- 2001-09-25 EP EP05077430A patent/EP1624461B1/en not_active Expired - Lifetime
- 2001-09-25 AU AU2001294743A patent/AU2001294743A1/en not_active Abandoned
- 2001-09-25 CN CNB018164498A patent/CN1273992C/zh not_active Expired - Lifetime
- 2001-09-25 KR KR1020037004422A patent/KR100760886B1/ko active IP Right Grant
- 2001-09-25 DE DE60130012T patent/DE60130012T2/de not_active Expired - Lifetime
- 2001-09-25 AT AT01975415T patent/ATE370498T1/de not_active IP Right Cessation
- 2001-09-25 EP EP01975415A patent/EP1332500B1/en not_active Expired - Lifetime
- 2001-09-25 WO PCT/US2001/030123 patent/WO2002027729A2/en active IP Right Grant
- 2001-09-25 JP JP2002531423A patent/JP2004510286A/ja active Pending
- 2001-09-27 TW TW090123977A patent/TW561480B/zh not_active IP Right Cessation
-
2003
- 2003-01-24 US US10/350,874 patent/US6714449B2/en not_active Expired - Lifetime
- 2003-10-23 US US10/692,922 patent/US6873549B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1853239B (zh) * | 2003-07-29 | 2012-02-29 | 桑迪士克股份有限公司 | 检测过度编程的存储器 |
CN1877741B (zh) * | 2005-06-10 | 2012-05-23 | 旺宏电子股份有限公司 | 分析多位存储单元的临界状态相互作用的方法 |
CN111445941A (zh) * | 2013-02-10 | 2020-07-24 | 希捷科技有限公司 | 基于保留漂移历史的非易失性存储器读取阈值最优化 |
Also Published As
Publication number | Publication date |
---|---|
JP2004510286A (ja) | 2004-04-02 |
DE60130012T2 (de) | 2008-03-20 |
US6714449B2 (en) | 2004-03-30 |
WO2002027729A2 (en) | 2002-04-04 |
US6873549B2 (en) | 2005-03-29 |
US20030112661A1 (en) | 2003-06-19 |
AU2001294743A1 (en) | 2002-04-08 |
EP1624461B1 (en) | 2012-07-25 |
ATE370498T1 (de) | 2007-09-15 |
EP1332500B1 (en) | 2007-08-15 |
US6538922B1 (en) | 2003-03-25 |
KR100760886B1 (ko) | 2007-09-21 |
KR20030043976A (ko) | 2003-06-02 |
DE60130012D1 (de) | 2007-09-27 |
EP1624461A2 (en) | 2006-02-08 |
CN1273992C (zh) | 2006-09-06 |
EP1624461A3 (en) | 2006-07-12 |
US20040105307A1 (en) | 2004-06-03 |
EP1332500A2 (en) | 2003-08-06 |
WO2002027729A3 (en) | 2002-12-12 |
TW561480B (en) | 2003-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1273992C (zh) | 可写的跟踪单元 | |
US7301807B2 (en) | Writable tracking cells | |
US7821826B2 (en) | Memory cell readout using successive approximation | |
CN1126256C (zh) | 用于多数字位的稳定电路 | |
US7400527B2 (en) | Bit symbol recognition method and structure for multiple bit storage in non-volatile memories | |
US20170068591A1 (en) | Efficient search for optimal read thresholds in flash memory | |
TWI594263B (zh) | 記憶體系統及其操作方法 | |
KR20160013843A (ko) | 판독 전압들의 업데이트 | |
WO2007132452A2 (en) | Reducing programming error in memory devices | |
US11669380B2 (en) | Dynamic programming of page margins | |
US11789640B2 (en) | Estimation of read level thresholds using a data structure | |
US11373712B2 (en) | Dynamic programming of valley margins | |
CN110473581B (zh) | 固态储存装置及其相关控制方法 | |
CN102089827A (zh) | 非易失性存储器和关联多遍编程的方法 | |
US8694853B1 (en) | Read commands for reading interfering memory cells | |
US9779818B2 (en) | Adaptation of high-order read thresholds | |
KR101976883B1 (ko) | 비-휘발성 메모리 프로그래밍 | |
JP2001236791A (ja) | 不揮発性半導体記憶装置、該不揮発性半導体記憶装置からのデータの読み出し方法及び、該不揮発性半導体記憶装置へのデータの書き込み方法 | |
Chen et al. | A NAND flash endurance prediction scheme with FPGA-based memory controller system | |
KR101261052B1 (ko) | 멀티레벨 셀 메모리 장치 및 그 데이터 저장 방법 | |
CN101685674A (zh) | 存储器编程方法及存储器 | |
US9576649B2 (en) | Charge loss compensation through augmentation of accumulated charge in a memory cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SANDISK CORP. Effective date: 20120322 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120322 Address after: American Texas Patentee after: Sandisk Corp. Address before: American California Patentee before: Sandisk Corp. |
|
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: texas Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: American Texas Patentee before: Sandisk Corp. |
|
CX01 | Expiry of patent term |
Granted publication date: 20060906 |
|
CX01 | Expiry of patent term |