CN1437721A - 多数据区段同时编程和在其它指定块中存储物理块特征的闪速eeprom系统 - Google Patents
多数据区段同时编程和在其它指定块中存储物理块特征的闪速eeprom系统 Download PDFInfo
- Publication number
- CN1437721A CN1437721A CN01806804A CN01806804A CN1437721A CN 1437721 A CN1437721 A CN 1437721A CN 01806804 A CN01806804 A CN 01806804A CN 01806804 A CN01806804 A CN 01806804A CN 1437721 A CN1437721 A CN 1437721A
- Authority
- CN
- China
- Prior art keywords
- data
- user data
- memory
- memory cell
- piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/107—Programming all cells in an array, sector or block to the same state prior to flash erasing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
- G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7207—Details relating to flash memory management management of metadata or control data
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7208—Multiple device management, e.g. distributing data over multiple flash devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Storage Device Security (AREA)
Abstract
Description
Claims (71)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/505,555 US6426893B1 (en) | 2000-02-17 | 2000-02-17 | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
US09/505,555 | 2000-02-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1437721A true CN1437721A (zh) | 2003-08-20 |
CN100458674C CN100458674C (zh) | 2009-02-04 |
Family
ID=24010780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018068049A Expired - Lifetime CN100458674C (zh) | 2000-02-17 | 2001-02-13 | 多数据区段同时编程和在其它指定块中存储物理块特征的闪速eeprom系统 |
Country Status (6)
Country | Link |
---|---|
US (14) | US6426893B1 (zh) |
KR (1) | KR100663738B1 (zh) |
CN (1) | CN100458674C (zh) |
AU (1) | AU2001238404A1 (zh) |
HK (1) | HK1058563A1 (zh) |
WO (1) | WO2001061703A2 (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100334565C (zh) * | 2004-01-27 | 2007-08-29 | 三星电子株式会社 | 闪速存储器的数据管理设备和方法 |
CN100347656C (zh) * | 2004-07-19 | 2007-11-07 | 普安科技股份有限公司 | 储存虚拟化控制器间动态逻辑媒体单元重新指定方法 |
CN101241752A (zh) * | 2007-02-06 | 2008-08-13 | 三星电子株式会社 | 存储卡和包含所述存储卡的存储系统 |
CN101218557B (zh) * | 2005-07-05 | 2011-09-28 | 国际商业机器公司 | 用于存储器迁移的系统和方法 |
CN102473126A (zh) * | 2009-08-11 | 2012-05-23 | 桑迪士克科技股份有限公司 | 提供闪存系统中的读状态和空闲块管理信息的控制器和方法 |
CN102629237A (zh) * | 2011-02-04 | 2012-08-08 | 西部数据技术公司 | 非易失性半导体存储器的多个器件的并行搜索 |
CN101630279B (zh) * | 2003-10-03 | 2012-08-15 | 桑迪士克股份有限公司 | 快闪存储器数据校正及擦除技术 |
CN101589437B (zh) * | 2006-11-27 | 2012-08-29 | 桑迪士克股份有限公司 | 用于验证编程的分段位扫描 |
CN101496110B (zh) * | 2006-05-12 | 2013-02-13 | 苹果公司 | 存储设备中的失真估计和消除 |
US8683116B2 (en) | 2007-12-27 | 2014-03-25 | SanDisk Technologies, Inc. | Controller for one type of NAND flash memory for emulating another type of NAND flash memory |
CN111241003A (zh) * | 2018-11-29 | 2020-06-05 | 美光科技公司 | 使用数据写入计数器使非易失性存储器的耗损均衡 |
CN112083887A (zh) * | 2020-09-10 | 2020-12-15 | 深圳芯邦科技股份有限公司 | 一种数据处理方法及相关设备 |
Families Citing this family (335)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5657332A (en) * | 1992-05-20 | 1997-08-12 | Sandisk Corporation | Soft errors handling in EEPROM devices |
JP3782840B2 (ja) * | 1995-07-14 | 2006-06-07 | 株式会社ルネサステクノロジ | 外部記憶装置およびそのメモリアクセス制御方法 |
US8171203B2 (en) * | 1995-07-31 | 2012-05-01 | Micron Technology, Inc. | Faster write operations to nonvolatile memory using FSInfo sector manipulation |
US6031758A (en) * | 1996-02-29 | 2000-02-29 | Hitachi, Ltd. | Semiconductor memory device having faulty cells |
JP3714969B2 (ja) * | 1998-03-02 | 2005-11-09 | レクサー・メディア・インコーポレイテッド | 改良されたオペレーティングモード検出機能を備えたフラッシュメモリーカード及びユーザフレンドリなインターフェーシングシステム |
KR100544175B1 (ko) * | 1999-05-08 | 2006-01-23 | 삼성전자주식회사 | 링킹 타입 정보를 저장하는 기록 매체와 결함 영역 처리 방법 |
BR0007239B1 (pt) | 1999-10-21 | 2014-03-18 | Panasonic Corp | Aparelho de acesso á placa de memória semicondutora, placa de memória semicondutora e método de inicialização. |
US8341332B2 (en) | 2003-12-02 | 2012-12-25 | Super Talent Electronics, Inc. | Multi-level controller with smart storage transfer manager for interleaving multiple single-chip flash memory devices |
US6426893B1 (en) | 2000-02-17 | 2002-07-30 | Sandisk Corporation | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
US7155559B1 (en) * | 2000-08-25 | 2006-12-26 | Lexar Media, Inc. | Flash memory architecture with separate storage of overhead and user data |
US7107378B1 (en) * | 2000-09-01 | 2006-09-12 | Sandisk Corporation | Cooperative interconnection and operation of a non-volatile memory card and an input-output card |
US6538922B1 (en) * | 2000-09-27 | 2003-03-25 | Sandisk Corporation | Writable tracking cells |
US6684289B1 (en) * | 2000-11-22 | 2004-01-27 | Sandisk Corporation | Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory |
US7020736B1 (en) * | 2000-12-18 | 2006-03-28 | Redback Networks Inc. | Method and apparatus for sharing memory space across mutliple processing units |
US6763424B2 (en) | 2001-01-19 | 2004-07-13 | Sandisk Corporation | Partial block data programming and reading operations in a non-volatile memory |
JP3875570B2 (ja) * | 2001-02-20 | 2007-01-31 | 株式会社東芝 | 半導体記憶装置のデータ書き込み方法及び半導体記憶装置 |
US6522580B2 (en) | 2001-06-27 | 2003-02-18 | Sandisk Corporation | Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states |
JP4059473B2 (ja) * | 2001-08-09 | 2008-03-12 | 株式会社ルネサステクノロジ | メモリカード及びメモリコントローラ |
US6614685B2 (en) * | 2001-08-09 | 2003-09-02 | Multi Level Memory Technology | Flash memory array partitioning architectures |
US6948026B2 (en) * | 2001-08-24 | 2005-09-20 | Micron Technology, Inc. | Erase block management |
US6717847B2 (en) | 2001-09-17 | 2004-04-06 | Sandisk Corporation | Selective operation of a multi-state non-volatile memory system in a binary mode |
US7554842B2 (en) * | 2001-09-17 | 2009-06-30 | Sandisk Corporation | Multi-purpose non-volatile memory card |
US6985388B2 (en) | 2001-09-17 | 2006-01-10 | Sandisk Corporation | Dynamic column block selection |
US7170802B2 (en) * | 2003-12-31 | 2007-01-30 | Sandisk Corporation | Flexible and area efficient column redundancy for non-volatile memories |
DE60130774T2 (de) * | 2001-10-25 | 2008-07-17 | Stmicroelectronics S.R.L., Agrate Brianza | Schnelle Programmiermethode für nichtflüchtige Speicher, insbesondere flash Speicher und ähnliche Speicherarchitekturen |
US6967872B2 (en) * | 2001-12-18 | 2005-11-22 | Sandisk Corporation | Method and system for programming and inhibiting multi-level, non-volatile memory cells |
US7246268B2 (en) * | 2002-01-16 | 2007-07-17 | Sandisk Corporation | Method and apparatus for dynamic degradation detection |
US6542407B1 (en) * | 2002-01-18 | 2003-04-01 | Sandisk Corporation | Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells |
US6621739B2 (en) | 2002-01-18 | 2003-09-16 | Sandisk Corporation | Reducing the effects of noise in non-volatile memories through multiple reads |
US6957295B1 (en) * | 2002-01-18 | 2005-10-18 | Lexar Media, Inc. | File management of one-time-programmable nonvolatile memory devices |
US6950918B1 (en) * | 2002-01-18 | 2005-09-27 | Lexar Media, Inc. | File management of one-time-programmable nonvolatile memory devices |
US6839826B2 (en) * | 2002-02-06 | 2005-01-04 | Sandisk Corporation | Memory device with pointer structure to map logical to physical addresses |
US7600165B2 (en) * | 2002-02-13 | 2009-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Error control coding method and system for non-volatile memory |
US6871257B2 (en) * | 2002-02-22 | 2005-03-22 | Sandisk Corporation | Pipelined parallel programming operation in a non-volatile memory system |
WO2003071853A2 (en) * | 2002-02-22 | 2003-09-04 | Lexar Media, Inc. | Removable memory media with integral indicator light |
US6639309B2 (en) * | 2002-03-28 | 2003-10-28 | Sandisk Corporation | Memory package with a controller on one side of a printed circuit board and memory on another side of the circuit board |
US7440774B2 (en) | 2002-04-08 | 2008-10-21 | Socket Mobile, Inc. | Wireless enabled memory module |
JP3833970B2 (ja) | 2002-06-07 | 2006-10-18 | 株式会社東芝 | 不揮発性半導体メモリ |
US6781877B2 (en) * | 2002-09-06 | 2004-08-24 | Sandisk Corporation | Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells |
US7234036B1 (en) | 2002-10-28 | 2007-06-19 | Sandisk Corporation | Method and apparatus for resolving physical blocks associated with a common logical block |
US6973531B1 (en) | 2002-10-28 | 2005-12-06 | Sandisk Corporation | Tracking the most frequently erased blocks in non-volatile memory systems |
US7103732B1 (en) | 2002-10-28 | 2006-09-05 | Sandisk Corporation | Method and apparatus for managing an erase count block |
US7035967B2 (en) * | 2002-10-28 | 2006-04-25 | Sandisk Corporation | Maintaining an average erase count in a non-volatile storage system |
US7039788B1 (en) | 2002-10-28 | 2006-05-02 | Sandisk Corporation | Method and apparatus for splitting a logical block |
US7526599B2 (en) * | 2002-10-28 | 2009-04-28 | Sandisk Corporation | Method and apparatus for effectively enabling an out of sequence write process within a non-volatile memory system |
US8412879B2 (en) * | 2002-10-28 | 2013-04-02 | Sandisk Technologies Inc. | Hybrid implementation for error correction codes within a non-volatile memory system |
US7181611B2 (en) * | 2002-10-28 | 2007-02-20 | Sandisk Corporation | Power management block for use in a non-volatile memory system |
US7171536B2 (en) * | 2002-10-28 | 2007-01-30 | Sandisk Corporation | Unusable block management within a non-volatile memory system |
US6831865B2 (en) * | 2002-10-28 | 2004-12-14 | Sandisk Corporation | Maintaining erase counts in non-volatile storage systems |
US20040083334A1 (en) * | 2002-10-28 | 2004-04-29 | Sandisk Corporation | Method and apparatus for managing the integrity of data in non-volatile memory system |
US7174440B2 (en) * | 2002-10-28 | 2007-02-06 | Sandisk Corporation | Method and apparatus for performing block caching in a non-volatile memory system |
US7096313B1 (en) | 2002-10-28 | 2006-08-22 | Sandisk Corporation | Tracking the least frequently erased blocks in non-volatile memory systems |
US6985992B1 (en) | 2002-10-28 | 2006-01-10 | Sandisk Corporation | Wear-leveling in non-volatile storage systems |
US7254668B1 (en) | 2002-10-28 | 2007-08-07 | Sandisk Corporation | Method and apparatus for grouping pages within a block |
US7367503B2 (en) * | 2002-11-13 | 2008-05-06 | Sandisk Corporation | Universal non-volatile memory card used with various different standard cards containing a memory controller |
US6901498B2 (en) * | 2002-12-09 | 2005-05-31 | Sandisk Corporation | Zone boundary adjustment for defects in non-volatile memories |
EP1435625A1 (en) * | 2002-12-30 | 2004-07-07 | STMicroelectronics S.r.l. | Non volatile memory device including a predetermined number of sectors |
US7505890B2 (en) * | 2003-01-15 | 2009-03-17 | Cox Communications, Inc. | Hard disk drive emulator |
US6944063B2 (en) * | 2003-01-28 | 2005-09-13 | Sandisk Corporation | Non-volatile semiconductor memory with large erase blocks storing cycle counts |
FI117489B (fi) | 2003-02-07 | 2006-10-31 | Nokia Corp | Menetelmä muistikortin osoittamiseksi, muistikorttia käyttävä järjestelmä, ja muistikortti |
US7904786B2 (en) * | 2003-03-06 | 2011-03-08 | Hewlett-Packard Development Company, L.P. | Assisted memory system |
US7237074B2 (en) | 2003-06-13 | 2007-06-26 | Sandisk Corporation | Tracking cells for a memory system |
US6906964B2 (en) * | 2003-06-27 | 2005-06-14 | Hewlett-Packard Development Company, L.P. | Multiple buffer memory interface |
US6956764B2 (en) * | 2003-08-25 | 2005-10-18 | Freescale Semiconductor, Inc. | Method of writing to a multi-state magnetic random access memory cell |
US7046555B2 (en) | 2003-09-17 | 2006-05-16 | Sandisk Corporation | Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance |
US7559004B1 (en) | 2003-10-01 | 2009-07-07 | Sandisk Corporation | Dynamic redundant area configuration in a non-volatile memory system |
US7188228B1 (en) * | 2003-10-01 | 2007-03-06 | Sandisk Corporation | Hybrid mapping implementation within a non-volatile memory system |
US7173852B2 (en) * | 2003-10-03 | 2007-02-06 | Sandisk Corporation | Corrected data storage and handling methods |
US8706990B2 (en) | 2003-10-28 | 2014-04-22 | Sandisk Technologies Inc. | Adaptive internal table backup for non-volatile memory system |
US7089349B2 (en) * | 2003-10-28 | 2006-08-08 | Sandisk Corporation | Internal maintenance schedule request for non-volatile memory system |
US7032087B1 (en) | 2003-10-28 | 2006-04-18 | Sandisk Corporation | Erase count differential table within a non-volatile memory system |
TWI226643B (en) * | 2003-10-31 | 2005-01-11 | C One Technology Corp | Simulated SmartMedia/xD-Picture memory card using any nonvolatile memory |
US7730368B2 (en) * | 2003-10-31 | 2010-06-01 | Sandisk Il Ltd. | Method, system and computer-readable code for testing of flash memory |
US7424659B2 (en) * | 2003-10-31 | 2008-09-09 | Sandisk Il Ltd. | System-in-package and method of testing thereof |
EP1538525A1 (en) * | 2003-12-04 | 2005-06-08 | Texas Instruments Incorporated | ECC computation simultaneously performed while reading or programming a flash memory |
US7143332B1 (en) * | 2003-12-16 | 2006-11-28 | Xilinx, Inc. | Methods and structures for providing programmable width and error correction in memory arrays in programmable logic devices |
US7266732B2 (en) * | 2003-12-22 | 2007-09-04 | Samsung Electronics Co., Ltd. | MRAM with controller |
KR100538338B1 (ko) * | 2003-12-24 | 2005-12-22 | 주식회사 포인칩스 | 플래시 메모리의 블록 균등 분산 기법 및 이를 이용한데이터 저장 장치 |
US20050144363A1 (en) * | 2003-12-30 | 2005-06-30 | Sinclair Alan W. | Data boundary management |
US7433993B2 (en) * | 2003-12-30 | 2008-10-07 | San Disk Corportion | Adaptive metablocks |
US7173863B2 (en) * | 2004-03-08 | 2007-02-06 | Sandisk Corporation | Flash controller cache architecture |
US7139864B2 (en) * | 2003-12-30 | 2006-11-21 | Sandisk Corporation | Non-volatile memory and method with block management system |
US7631138B2 (en) * | 2003-12-30 | 2009-12-08 | Sandisk Corporation | Adaptive mode switching of flash memory address mapping based on host usage characteristics |
US20050144516A1 (en) * | 2003-12-30 | 2005-06-30 | Gonzalez Carlos J. | Adaptive deterministic grouping of blocks into multi-block units |
US7383375B2 (en) | 2003-12-30 | 2008-06-03 | Sandisk Corporation | Data run programming |
US8504798B2 (en) * | 2003-12-30 | 2013-08-06 | Sandisk Technologies Inc. | Management of non-volatile memory systems having large erase blocks |
US7594135B2 (en) * | 2003-12-31 | 2009-09-22 | Sandisk Corporation | Flash memory system startup operation |
CN100495369C (zh) * | 2004-01-20 | 2009-06-03 | 特科2000国际有限公司 | 使用多个存储器设备的便携数据存储设备 |
US8019928B2 (en) * | 2004-02-15 | 2011-09-13 | Sandisk Il Ltd. | Method of managing a multi-bit-cell flash memory |
US7716413B2 (en) * | 2004-02-15 | 2010-05-11 | Sandisk Il Ltd. | Method of making a multi-bit-cell flash memory |
US7490283B2 (en) | 2004-05-13 | 2009-02-10 | Sandisk Corporation | Pipelined data relocation and improved chip architectures |
US7336531B2 (en) | 2004-06-25 | 2008-02-26 | Micron Technology, Inc. | Multiple level cell memory device with single bit per cell, re-mappable memory block |
KR100587702B1 (ko) | 2004-07-09 | 2006-06-08 | 삼성전자주식회사 | 피크 전류의 감소 특성을 갖는 상변화 메모리 장치 및그에 따른 데이터 라이팅 방법 |
US7441067B2 (en) | 2004-11-15 | 2008-10-21 | Sandisk Corporation | Cyclic flash memory wear leveling |
US20120113273A1 (en) * | 2004-11-29 | 2012-05-10 | Ariel Inventions Llc | System, Method, and Devices for Searching for a Digital Image over a Communication Network |
US7502256B2 (en) | 2004-11-30 | 2009-03-10 | Siliconsystems, Inc. | Systems and methods for reducing unauthorized data recovery from solid-state storage devices |
US7420847B2 (en) * | 2004-12-14 | 2008-09-02 | Sandisk Corporation | Multi-state memory having data recovery after program fail |
US7120051B2 (en) * | 2004-12-14 | 2006-10-10 | Sandisk Corporation | Pipelined programming of non-volatile memories using early data |
US7366826B2 (en) * | 2004-12-16 | 2008-04-29 | Sandisk Corporation | Non-volatile memory and method with multi-stream update tracking |
US7315916B2 (en) * | 2004-12-16 | 2008-01-01 | Sandisk Corporation | Scratch pad block |
US7386655B2 (en) * | 2004-12-16 | 2008-06-10 | Sandisk Corporation | Non-volatile memory and method with improved indexing for scratch pad and update blocks |
US7395404B2 (en) | 2004-12-16 | 2008-07-01 | Sandisk Corporation | Cluster auto-alignment for storing addressable data packets in a non-volatile memory array |
US7412560B2 (en) * | 2004-12-16 | 2008-08-12 | Sandisk Corporation | Non-volatile memory and method with multi-stream updating |
US7149111B2 (en) * | 2004-12-17 | 2006-12-12 | Msystems Ltd. | Method of handling limitations on the order of writing to a non-volatile memory |
US7849381B2 (en) * | 2004-12-21 | 2010-12-07 | Sandisk Corporation | Method for copying data in reprogrammable non-volatile memory |
US7409473B2 (en) * | 2004-12-21 | 2008-08-05 | Sandisk Corporation | Off-chip data relocation |
US7882299B2 (en) * | 2004-12-21 | 2011-02-01 | Sandisk Corporation | System and method for use of on-chip non-volatile memory write cache |
US7970984B2 (en) * | 2004-12-23 | 2011-06-28 | Sandisk Il Ltd. | Method for using a multi-bit cell flash device in a system not designed for the device |
DE102004062245A1 (de) * | 2004-12-23 | 2006-07-13 | Giesecke & Devrient Gmbh | Verwaltung von Datenobjekten in einem nichtflüchtigen überschreibbaren Speicher |
US20060143368A1 (en) * | 2004-12-23 | 2006-06-29 | M-Systems Flash Disk Pioneers Ltd. | Method for using a multi-bit cell flash device in a system not designed for the device |
US20060140007A1 (en) * | 2004-12-29 | 2006-06-29 | Raul-Adrian Cernea | Non-volatile memory and method with shared processing for an aggregate of read/write circuits |
US7212440B2 (en) * | 2004-12-30 | 2007-05-01 | Sandisk Corporation | On-chip data grouping and alignment |
US7308525B2 (en) * | 2005-01-10 | 2007-12-11 | Sandisk Il Ltd. | Method of managing a multi-bit cell flash memory with improved reliablility and performance |
US7363421B2 (en) * | 2005-01-13 | 2008-04-22 | Stmicroelectronics S.R.L. | Optimizing write/erase operations in memory devices |
US7315917B2 (en) | 2005-01-20 | 2008-01-01 | Sandisk Corporation | Scheduling of housekeeping operations in flash memory systems |
US20060184719A1 (en) * | 2005-02-16 | 2006-08-17 | Sinclair Alan W | Direct data file storage implementation techniques in flash memories |
US7877539B2 (en) * | 2005-02-16 | 2011-01-25 | Sandisk Corporation | Direct data file storage in flash memories |
US20060184718A1 (en) * | 2005-02-16 | 2006-08-17 | Sinclair Alan W | Direct file data programming and deletion in flash memories |
US9104315B2 (en) | 2005-02-04 | 2015-08-11 | Sandisk Technologies Inc. | Systems and methods for a mass data storage system having a file-based interface to a host and a non-file-based interface to secondary storage |
ATE381061T1 (de) * | 2005-03-08 | 2007-12-15 | Bosch Gmbh Robert | Verfahren und vorrichtung zum wiederbeschreiben eines sektors mit bootloader-software in einem sektor-löschbaren nichtflüchtigen halbleiterspeicher |
KR100685532B1 (ko) | 2005-03-15 | 2007-02-22 | 주식회사 하이닉스반도체 | 독출속도를 향상시키기 위한 버퍼 메모리를 갖는 불휘발성메모리 장치 |
US7187585B2 (en) * | 2005-04-05 | 2007-03-06 | Sandisk Corporation | Read operation for non-volatile storage that includes compensation for coupling |
US7196946B2 (en) * | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling in non-volatile storage |
US7196928B2 (en) * | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling during read operations of non-volatile memory |
US7457910B2 (en) | 2005-06-29 | 2008-11-25 | Sandisk Corproation | Method and system for managing partitions in a storage device |
JPWO2007011037A1 (ja) * | 2005-07-21 | 2009-02-05 | パナソニック株式会社 | データの回転またはインターリーブ機能を有する半導体メモリ装置 |
US7627733B2 (en) | 2005-08-03 | 2009-12-01 | Sandisk Corporation | Method and system for dual mode access for storage devices |
US7984084B2 (en) * | 2005-08-03 | 2011-07-19 | SanDisk Technologies, Inc. | Non-volatile memory with scheduled reclaim operations |
US7480766B2 (en) * | 2005-08-03 | 2009-01-20 | Sandisk Corporation | Interfacing systems operating through a logical address space and on a direct data file basis |
US7949845B2 (en) * | 2005-08-03 | 2011-05-24 | Sandisk Corporation | Indexing of file data in reprogrammable non-volatile memories that directly store data files |
US7552271B2 (en) | 2005-08-03 | 2009-06-23 | Sandisk Corporation | Nonvolatile memory with block management |
US7558906B2 (en) | 2005-08-03 | 2009-07-07 | Sandisk Corporation | Methods of managing blocks in nonvolatile memory |
US7669003B2 (en) * | 2005-08-03 | 2010-02-23 | Sandisk Corporation | Reprogrammable non-volatile memory systems with indexing of directly stored data files |
US7352626B1 (en) | 2005-08-29 | 2008-04-01 | Spansion Llc | Voltage regulator with less overshoot and faster settling time |
US7307878B1 (en) | 2005-08-29 | 2007-12-11 | Spansion Llc | Flash memory device having improved program rate |
US8255108B2 (en) * | 2005-08-31 | 2012-08-28 | Spx Corporation | Dynamic file system creation for scan tools |
US7523381B2 (en) * | 2005-09-01 | 2009-04-21 | Micron Technology, Inc. | Non-volatile memory with error detection |
US7295475B2 (en) * | 2005-09-20 | 2007-11-13 | Spansion Llc | Flash memory programming using an indication bit to interpret state |
US8358543B1 (en) * | 2005-09-20 | 2013-01-22 | Spansion Llc | Flash memory programming with data dependent control of source lines |
US7957204B1 (en) | 2005-09-20 | 2011-06-07 | Spansion Llc | Flash memory programming power reduction |
US7433228B2 (en) * | 2005-09-20 | 2008-10-07 | Spansion Llc | Multi-bit flash memory device having improved program rate |
US7631245B2 (en) * | 2005-09-26 | 2009-12-08 | Sandisk Il Ltd. | NAND flash memory controller exporting a NAND interface |
US8291295B2 (en) * | 2005-09-26 | 2012-10-16 | Sandisk Il Ltd. | NAND flash memory controller exporting a NAND interface |
US11948629B2 (en) | 2005-09-30 | 2024-04-02 | Mosaid Technologies Incorporated | Non-volatile memory device with concurrent bank operations |
KR101260632B1 (ko) | 2005-09-30 | 2013-05-03 | 모사이드 테크놀로지스 인코퍼레이티드 | 출력 제어 메모리 |
US7652922B2 (en) | 2005-09-30 | 2010-01-26 | Mosaid Technologies Incorporated | Multiple independent serial link memory |
US7814262B2 (en) * | 2005-10-13 | 2010-10-12 | Sandisk Corporation | Memory system storing transformed units of data in fixed sized storage blocks |
US7640424B2 (en) * | 2005-10-13 | 2009-12-29 | Sandisk Corporation | Initialization of flash storage via an embedded controller |
US7529905B2 (en) * | 2005-10-13 | 2009-05-05 | Sandisk Corporation | Method of storing transformed units of data in a memory system having fixed sized storage blocks |
US7631162B2 (en) | 2005-10-27 | 2009-12-08 | Sandisck Corporation | Non-volatile memory with adaptive handling of data writes |
US7509471B2 (en) * | 2005-10-27 | 2009-03-24 | Sandisk Corporation | Methods for adaptively handling data writes in non-volatile memories |
US7379330B2 (en) * | 2005-11-08 | 2008-05-27 | Sandisk Corporation | Retargetable memory cell redundancy methods |
US7877540B2 (en) * | 2005-12-13 | 2011-01-25 | Sandisk Corporation | Logically-addressed file storage methods |
US7793068B2 (en) | 2005-12-21 | 2010-09-07 | Sandisk Corporation | Dual mode access for non-volatile storage devices |
US7769978B2 (en) * | 2005-12-21 | 2010-08-03 | Sandisk Corporation | Method and system for accessing non-volatile storage devices |
US7747837B2 (en) | 2005-12-21 | 2010-06-29 | Sandisk Corporation | Method and system for accessing non-volatile storage devices |
US20070143566A1 (en) * | 2005-12-21 | 2007-06-21 | Gorobets Sergey A | Non-volatile memories with data alignment in a directly mapped file storage system |
US20070143561A1 (en) * | 2005-12-21 | 2007-06-21 | Gorobets Sergey A | Methods for adaptive file data handling in non-volatile memories with a directly mapped file storage system |
US20070143567A1 (en) * | 2005-12-21 | 2007-06-21 | Gorobets Sergey A | Methods for data alignment in non-volatile memories with a directly mapped file storage system |
US20070156998A1 (en) * | 2005-12-21 | 2007-07-05 | Gorobets Sergey A | Methods for memory allocation in non-volatile memories with a directly mapped file storage system |
US20070143378A1 (en) * | 2005-12-21 | 2007-06-21 | Gorobets Sergey A | Non-volatile memories with adaptive file handling in a directly mapped file storage system |
US7372763B2 (en) * | 2005-12-28 | 2008-05-13 | Intel Corporation | Memory with spatially encoded data storage |
US7609561B2 (en) * | 2006-01-18 | 2009-10-27 | Apple Inc. | Disabling faulty flash memory dies |
US7793059B2 (en) * | 2006-01-18 | 2010-09-07 | Apple Inc. | Interleaving policies for flash memory |
US7752391B2 (en) * | 2006-01-20 | 2010-07-06 | Apple Inc. | Variable caching policy system and method |
US20070174641A1 (en) * | 2006-01-25 | 2007-07-26 | Cornwell Michael J | Adjusting power supplies for data storage devices |
US7702935B2 (en) * | 2006-01-25 | 2010-04-20 | Apple Inc. | Reporting flash memory operating voltages |
US7912994B2 (en) * | 2006-01-27 | 2011-03-22 | Apple Inc. | Reducing connection time for mass storage class peripheral by internally prefetching file data into local cache in response to connection to host |
US7861122B2 (en) * | 2006-01-27 | 2010-12-28 | Apple Inc. | Monitoring health of non-volatile memory |
US7594043B2 (en) * | 2006-01-27 | 2009-09-22 | Apple Inc. | Reducing dismount time for mass storage class devices |
US20070208893A1 (en) * | 2006-02-23 | 2007-09-06 | Microsoft Corporation | File-based compression on a fat volume |
US7810017B2 (en) * | 2006-03-20 | 2010-10-05 | Micron Technology, Inc. | Variable sector-count ECC |
US7849302B2 (en) * | 2006-04-10 | 2010-12-07 | Apple Inc. | Direct boot arrangement using a NAND flash memory |
US7467253B2 (en) * | 2006-04-13 | 2008-12-16 | Sandisk Corporation | Cycle count storage systems |
US7451264B2 (en) * | 2006-04-13 | 2008-11-11 | Sandisk Corporation | Cycle count storage methods |
TWM304711U (en) * | 2006-04-26 | 2007-01-11 | Genesys Logic Inc | Flash memory data access reliability enhancing device |
US7613043B2 (en) * | 2006-05-15 | 2009-11-03 | Apple Inc. | Shifting reference values to account for voltage sag |
US7911834B2 (en) * | 2006-05-15 | 2011-03-22 | Apple Inc. | Analog interface for a flash memory die |
US7511646B2 (en) * | 2006-05-15 | 2009-03-31 | Apple Inc. | Use of 8-bit or higher A/D for NAND cell value |
US7551486B2 (en) * | 2006-05-15 | 2009-06-23 | Apple Inc. | Iterative memory cell charging based on reference cell value |
US7639531B2 (en) * | 2006-05-15 | 2009-12-29 | Apple Inc. | Dynamic cell bit resolution |
US7568135B2 (en) | 2006-05-15 | 2009-07-28 | Apple Inc. | Use of alternative value in cell detection |
US7852690B2 (en) * | 2006-05-15 | 2010-12-14 | Apple Inc. | Multi-chip package for a flash memory |
US7639542B2 (en) * | 2006-05-15 | 2009-12-29 | Apple Inc. | Maintenance operations for multi-level data storage cells |
US7701797B2 (en) * | 2006-05-15 | 2010-04-20 | Apple Inc. | Two levels of voltage regulation supplied for logic and data programming voltage of a memory device |
US8000134B2 (en) | 2006-05-15 | 2011-08-16 | Apple Inc. | Off-die charge pump that supplies multiple flash devices |
US7583545B2 (en) * | 2006-05-21 | 2009-09-01 | Sandisk Il Ltd | Method of storing data in a multi-bit-cell flash memory |
US8307148B2 (en) | 2006-06-23 | 2012-11-06 | Microsoft Corporation | Flash management techniques |
US7567461B2 (en) * | 2006-08-18 | 2009-07-28 | Micron Technology, Inc. | Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells |
US20080046641A1 (en) * | 2006-08-21 | 2008-02-21 | Sandisk Il Ltd. | NAND flash memory controller exporting a logical sector-based interface |
US20080046630A1 (en) * | 2006-08-21 | 2008-02-21 | Sandisk Il Ltd. | NAND flash memory controller exporting a logical sector-based interface |
JP4791909B2 (ja) * | 2006-08-21 | 2011-10-12 | 株式会社東芝 | 高速入出力機能を備える制御装置、及びその制御データの制御方法 |
US7739576B2 (en) * | 2006-08-31 | 2010-06-15 | Micron Technology, Inc. | Variable strength ECC |
US8001314B2 (en) | 2006-09-12 | 2011-08-16 | Apple Inc. | Storing a driver for controlling a memory |
US7716538B2 (en) * | 2006-09-27 | 2010-05-11 | Sandisk Corporation | Memory with cell population distribution assisted read margining |
US7886204B2 (en) * | 2006-09-27 | 2011-02-08 | Sandisk Corporation | Methods of cell population distribution assisted read margining |
US7783826B2 (en) * | 2006-09-28 | 2010-08-24 | Qimonda Ag | Data bus width converter |
US20080091901A1 (en) * | 2006-10-12 | 2008-04-17 | Alan David Bennett | Method for non-volatile memory with worst-case control data management |
US20080091871A1 (en) * | 2006-10-12 | 2008-04-17 | Alan David Bennett | Non-volatile memory with worst-case control data management |
KR100843209B1 (ko) * | 2006-11-02 | 2008-07-02 | 삼성전자주식회사 | 버퍼 메모리를 포함하는 저항형 메모리 장치, 저항형메모리 장치를 포함하는 메모리 시스템, 및 저항형 메모리장치의 데이터 기입/독출 방법 |
US7518932B2 (en) * | 2006-12-22 | 2009-04-14 | Intel Corporation | Erase cycle counting in non-volatile memories |
US8209461B2 (en) | 2006-12-26 | 2012-06-26 | Sandisk Technologies Inc. | Configuration of host LBA interface with flash memory |
US20080155175A1 (en) * | 2006-12-26 | 2008-06-26 | Sinclair Alan W | Host System That Manages a LBA Interface With Flash Memory |
US7917686B2 (en) * | 2006-12-26 | 2011-03-29 | Sandisk Corporation | Host system with direct data file interface configurability |
US8046522B2 (en) * | 2006-12-26 | 2011-10-25 | SanDisk Technologies, Inc. | Use of a direct data file system with a continuous logical address space interface and control of file address storage in logical blocks |
US8166267B2 (en) * | 2006-12-26 | 2012-04-24 | Sandisk Technologies Inc. | Managing a LBA interface in a direct data file memory system |
WO2008082996A1 (en) | 2006-12-26 | 2008-07-10 | Sandisk Corporation | Use of a direct data file system with a continuous logical address space interface |
US7739444B2 (en) | 2006-12-26 | 2010-06-15 | Sandisk Corporation | System using a direct data file system with a continuous logical address space interface |
TW200828320A (en) * | 2006-12-28 | 2008-07-01 | Genesys Logic Inc | Method for performing static wear leveling on flash memory |
US7984360B2 (en) * | 2006-12-31 | 2011-07-19 | Ramot At Tel Aviv University Ltd. | Avoiding errors in a flash memory by using substitution transformations |
KR100819102B1 (ko) | 2007-02-06 | 2008-04-03 | 삼성전자주식회사 | 개선된 멀티 페이지 프로그램 동작을 갖는 불휘발성 반도체메모리 장치 |
JP4978224B2 (ja) * | 2007-02-08 | 2012-07-18 | カシオ計算機株式会社 | 光電変換装置及びそれを備えた表示パネル |
US20080209079A1 (en) * | 2007-02-28 | 2008-08-28 | Ty Joseph Caswell | Personal information communication device and method |
US20090088088A1 (en) * | 2007-02-28 | 2009-04-02 | Crick Information Technologies | Personal Information Communication Device and Method |
US7613051B2 (en) | 2007-03-14 | 2009-11-03 | Apple Inc. | Interleaving charge pumps for programmable memories |
US7814304B2 (en) * | 2007-03-14 | 2010-10-12 | Apple Inc. | Switching drivers between processors |
US7573773B2 (en) * | 2007-03-28 | 2009-08-11 | Sandisk Corporation | Flash memory with data refresh triggered by controlled scrub data reads |
US7477547B2 (en) * | 2007-03-28 | 2009-01-13 | Sandisk Corporation | Flash memory refresh techniques triggered by controlled scrub data reads |
US7913032B1 (en) | 2007-04-25 | 2011-03-22 | Apple Inc. | Initiating memory wear leveling |
US7996599B2 (en) | 2007-04-25 | 2011-08-09 | Apple Inc. | Command resequencing in memory operations |
US20080288712A1 (en) | 2007-04-25 | 2008-11-20 | Cornwell Michael J | Accessing metadata with an external host |
US7869277B1 (en) | 2007-04-25 | 2011-01-11 | Apple Inc. | Managing data writing to memories |
US7870327B1 (en) | 2007-04-25 | 2011-01-11 | Apple Inc. | Controlling memory operations using a driver and flash memory type tables |
KR100914265B1 (ko) * | 2007-05-10 | 2009-08-27 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및그것의 읽기 방법 |
US20080294813A1 (en) * | 2007-05-24 | 2008-11-27 | Sergey Anatolievich Gorobets | Managing Housekeeping Operations in Flash Memory |
US20080294814A1 (en) * | 2007-05-24 | 2008-11-27 | Sergey Anatolievich Gorobets | Flash Memory System with Management of Housekeeping Operations |
US7715255B2 (en) * | 2007-06-14 | 2010-05-11 | Sandisk Corporation | Programmable chip enable and chip address in semiconductor memory |
US7477545B2 (en) * | 2007-06-14 | 2009-01-13 | Sandisk Corporation | Systems for programmable chip enable and chip address in semiconductor memory |
CN101779249B (zh) | 2007-06-14 | 2013-03-27 | 桑迪士克科技股份有限公司 | 半导体存储器中的可编程芯片使能和芯片地址 |
WO2009032452A1 (en) * | 2007-08-03 | 2009-03-12 | Pulsetor, Llc | Pileup rejection in an energy-dispersive radiation spectrometry system |
US7633800B2 (en) * | 2007-08-08 | 2009-12-15 | Atmel Corporation | Redundancy scheme in memory |
KR101399549B1 (ko) | 2007-09-04 | 2014-05-28 | 삼성전자주식회사 | 반도체 메모리 장치 및 그것의 블록 관리 방법 |
US7818493B2 (en) * | 2007-09-07 | 2010-10-19 | Sandisk Corporation | Adaptive block list management |
US7545673B2 (en) * | 2007-09-25 | 2009-06-09 | Sandisk Il Ltd. | Using MLC flash as SLC by writing dummy data |
US7551477B2 (en) * | 2007-09-26 | 2009-06-23 | Sandisk Corporation | Multiple bit line voltages based on distance |
US9201790B2 (en) * | 2007-10-09 | 2015-12-01 | Seagate Technology Llc | System and method of matching data rates |
US8296498B2 (en) * | 2007-11-13 | 2012-10-23 | Sandisk Technologies Inc. | Method and system for virtual fast access non-volatile RAM |
US8347165B2 (en) | 2007-12-17 | 2013-01-01 | Micron Technology, Inc. | Self-timed error correcting code evaluation system and method |
US8144517B2 (en) | 2008-02-22 | 2012-03-27 | Samsung Electronics Co., Ltd. | Multilayered nonvolatile memory with adaptive control |
JP5218228B2 (ja) * | 2008-04-23 | 2013-06-26 | 新東工業株式会社 | 搬送装置及びブラスト加工装置 |
GB0811293D0 (en) * | 2008-06-19 | 2008-07-30 | Symbian Software Ltd | Memory apparatus |
US8843691B2 (en) * | 2008-06-25 | 2014-09-23 | Stec, Inc. | Prioritized erasure of data blocks in a flash storage device |
US20090327535A1 (en) * | 2008-06-30 | 2009-12-31 | Liu Tz-Yi | Adjustable read latency for memory device in page-mode access |
US8130528B2 (en) | 2008-08-25 | 2012-03-06 | Sandisk 3D Llc | Memory system with sectional data lines |
US8351290B1 (en) * | 2008-09-12 | 2013-01-08 | Marvell International Ltd. | Erased page detection |
US8027209B2 (en) | 2008-10-06 | 2011-09-27 | Sandisk 3D, Llc | Continuous programming of non-volatile memory |
US7996736B2 (en) * | 2008-10-26 | 2011-08-09 | Sandisk 3D Llc | Bad page marking strategy for fast readout in memory |
US8332577B2 (en) * | 2008-12-10 | 2012-12-11 | Sandisk Technologies Inc. | Program control of a non-volatile memory |
US8316201B2 (en) * | 2008-12-18 | 2012-11-20 | Sandisk Il Ltd. | Methods for executing a command to write data from a source location to a destination location in a memory device |
US20100174845A1 (en) * | 2009-01-05 | 2010-07-08 | Sergey Anatolievich Gorobets | Wear Leveling for Non-Volatile Memories: Maintenance of Experience Count and Passive Techniques |
US8244960B2 (en) | 2009-01-05 | 2012-08-14 | Sandisk Technologies Inc. | Non-volatile memory and method with write cache partition management methods |
US8040744B2 (en) * | 2009-01-05 | 2011-10-18 | Sandisk Technologies Inc. | Spare block management of non-volatile memories |
US8700840B2 (en) * | 2009-01-05 | 2014-04-15 | SanDisk Technologies, Inc. | Nonvolatile memory with write cache having flush/eviction methods |
US8094500B2 (en) * | 2009-01-05 | 2012-01-10 | Sandisk Technologies Inc. | Non-volatile memory and method with write cache partitioning |
US20100250875A1 (en) * | 2009-03-25 | 2010-09-30 | Silicon Laboratories Inc. | Eeprom emulation using flash memory |
US8279650B2 (en) | 2009-04-20 | 2012-10-02 | Sandisk 3D Llc | Memory system with data line switching scheme |
US8102705B2 (en) | 2009-06-05 | 2012-01-24 | Sandisk Technologies Inc. | Structure and method for shuffling data within non-volatile memory devices |
US8027195B2 (en) * | 2009-06-05 | 2011-09-27 | SanDisk Technologies, Inc. | Folding data stored in binary format into multi-state format within non-volatile memory devices |
US7974124B2 (en) * | 2009-06-24 | 2011-07-05 | Sandisk Corporation | Pointer based column selection techniques in non-volatile memories |
US20110002169A1 (en) | 2009-07-06 | 2011-01-06 | Yan Li | Bad Column Management with Bit Information in Non-Volatile Memory Systems |
US7948798B1 (en) * | 2009-07-22 | 2011-05-24 | Marvell International Ltd. | Mixed multi-level cell and single level cell storage device |
US8465471B2 (en) | 2009-08-05 | 2013-06-18 | Rocin Laboratories, Inc. | Endoscopically-guided electro-cauterizing power-assisted fat aspiration system for aspirating visceral fat tissue within the abdomen of a patient |
US8348929B2 (en) | 2009-08-05 | 2013-01-08 | Rocin Laboratories, Inc. | Endoscopically-guided tissue aspiration system for safely removing fat tissue from a patient |
US20110041039A1 (en) * | 2009-08-11 | 2011-02-17 | Eliyahou Harari | Controller and Method for Interfacing Between a Host Controller in a Host and a Flash Memory Device |
US20110040924A1 (en) * | 2009-08-11 | 2011-02-17 | Selinger Robert D | Controller and Method for Detecting a Transmission Error Over a NAND Interface Using Error Detection Code |
US8381077B2 (en) * | 2009-09-08 | 2013-02-19 | Lsi Corporation | Systems and methods for implementing error correction in relation to a flash memory |
EP2317442A1 (en) | 2009-10-29 | 2011-05-04 | Thomson Licensing | Solid state memory with reduced number of partially filled pages |
US8201020B2 (en) * | 2009-11-12 | 2012-06-12 | International Business Machines Corporation | Method apparatus and system for a redundant and fault tolerant solid state disk |
US8144512B2 (en) | 2009-12-18 | 2012-03-27 | Sandisk Technologies Inc. | Data transfer flows for on-chip folding |
US8468294B2 (en) * | 2009-12-18 | 2013-06-18 | Sandisk Technologies Inc. | Non-volatile memory with multi-gear control using on-chip folding of data |
US8725935B2 (en) | 2009-12-18 | 2014-05-13 | Sandisk Technologies Inc. | Balanced performance for on-chip folding of non-volatile memories |
US8443263B2 (en) | 2009-12-30 | 2013-05-14 | Sandisk Technologies Inc. | Method and controller for performing a copy-back operation |
US8595411B2 (en) | 2009-12-30 | 2013-11-26 | Sandisk Technologies Inc. | Method and controller for performing a sequence of commands |
US8416624B2 (en) | 2010-05-21 | 2013-04-09 | SanDisk Technologies, Inc. | Erase and programming techniques to reduce the widening of state distributions in non-volatile memories |
US8411519B2 (en) * | 2010-06-04 | 2013-04-02 | Apple Inc. | Selective retirement of blocks |
US8259499B2 (en) | 2010-06-29 | 2012-09-04 | Macronix International Co., Ltd. | Method and apparatus of performing an erase operation on a memory integrated circuit |
US9342446B2 (en) | 2011-03-29 | 2016-05-17 | SanDisk Technologies, Inc. | Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache |
KR20120125791A (ko) * | 2011-05-09 | 2012-11-19 | 삼성전자주식회사 | 플래시 메모리 장치 및 이를 포함하는 메모리 시스템 |
US8446772B2 (en) | 2011-08-04 | 2013-05-21 | Sandisk Technologies Inc. | Memory die self-disable if programmable element is not trusted |
US8687421B2 (en) | 2011-11-21 | 2014-04-01 | Sandisk Technologies Inc. | Scrub techniques for use with dynamic read |
US8806316B2 (en) | 2012-01-11 | 2014-08-12 | Micron Technology, Inc. | Circuits, integrated circuits, and methods for interleaved parity computation |
US8842473B2 (en) | 2012-03-15 | 2014-09-23 | Sandisk Technologies Inc. | Techniques for accessing column selecting shift register with skipped entries in non-volatile memories |
JP5929456B2 (ja) * | 2012-04-17 | 2016-06-08 | ソニー株式会社 | 記憶制御装置、記憶装置、情報処理システム、および、それらにおける処理方法 |
US8681548B2 (en) | 2012-05-03 | 2014-03-25 | Sandisk Technologies Inc. | Column redundancy circuitry for non-volatile memory |
US8953398B2 (en) | 2012-06-19 | 2015-02-10 | Sandisk Technologies Inc. | Block level grading for reliability and yield improvement |
US8910017B2 (en) | 2012-07-02 | 2014-12-09 | Sandisk Technologies Inc. | Flash memory with random partition |
US8750045B2 (en) | 2012-07-27 | 2014-06-10 | Sandisk Technologies Inc. | Experience count dependent program algorithm for flash memory |
US9076506B2 (en) | 2012-09-28 | 2015-07-07 | Sandisk Technologies Inc. | Variable rate parallel to serial shift register |
US9490035B2 (en) | 2012-09-28 | 2016-11-08 | SanDisk Technologies, Inc. | Centralized variable rate serializer and deserializer for bad column management |
US8897080B2 (en) | 2012-09-28 | 2014-11-25 | Sandisk Technologies Inc. | Variable rate serial to parallel shift register |
US9195584B2 (en) | 2012-12-10 | 2015-11-24 | Sandisk Technologies Inc. | Dynamic block linking with individually configured plane parameters |
US10133500B2 (en) * | 2013-03-06 | 2018-11-20 | Ab Initio Technology Llc | Managing operations on stored data units |
US9875054B2 (en) * | 2013-03-06 | 2018-01-23 | Ab Initio Technology Llc | Managing operations on stored data units |
US9959070B2 (en) | 2013-03-06 | 2018-05-01 | Ab Initio Technology Llc | Managing operations on stored data units |
JP2015022516A (ja) * | 2013-07-19 | 2015-02-02 | ソニー株式会社 | 記憶制御装置、記憶装置、情報処理システムおよび記憶制御方法 |
CN104346236B (zh) * | 2013-08-06 | 2018-03-23 | 慧荣科技股份有限公司 | 数据储存装置及其数据维护方法 |
CN103455454B (zh) * | 2013-09-02 | 2016-09-07 | 华为技术有限公司 | 一种控制存储器启动的方法和装置 |
FR3012654A1 (fr) | 2013-10-25 | 2015-05-01 | St Microelectronics Rousset | Procede d'ecriture et de lecture d'une memoire morte electriquement programmable et effacable multi-niveaux et dispositif de memoire correspondant |
US9230689B2 (en) | 2014-03-17 | 2016-01-05 | Sandisk Technologies Inc. | Finding read disturbs on non-volatile memories |
US9177654B2 (en) * | 2014-03-26 | 2015-11-03 | Burst Corporation | Solid-state memory device with plurality of memory cards |
US10114562B2 (en) | 2014-09-16 | 2018-10-30 | Sandisk Technologies Llc | Adaptive block allocation in nonvolatile memory |
US9678832B2 (en) | 2014-09-18 | 2017-06-13 | Sandisk Technologies Llc | Storage module and method for on-chip copy gather |
US9552171B2 (en) | 2014-10-29 | 2017-01-24 | Sandisk Technologies Llc | Read scrub with adaptive counter management |
US9934872B2 (en) | 2014-10-30 | 2018-04-03 | Sandisk Technologies Llc | Erase stress and delta erase loop count methods for various fail modes in non-volatile memory |
US9978456B2 (en) | 2014-11-17 | 2018-05-22 | Sandisk Technologies Llc | Techniques for reducing read disturb in partially written blocks of non-volatile memory |
US9349479B1 (en) | 2014-11-18 | 2016-05-24 | Sandisk Technologies Inc. | Boundary word line operation in nonvolatile memory |
US9224502B1 (en) | 2015-01-14 | 2015-12-29 | Sandisk Technologies Inc. | Techniques for detection and treating memory hole to local interconnect marginality defects |
US10032524B2 (en) | 2015-02-09 | 2018-07-24 | Sandisk Technologies Llc | Techniques for determining local interconnect defects |
US9449700B2 (en) | 2015-02-13 | 2016-09-20 | Sandisk Technologies Llc | Boundary word line search and open block read methods with reduced read disturb |
TWI608488B (zh) * | 2015-03-25 | 2017-12-11 | 慧榮科技股份有限公司 | 資料儲存裝置以及資料存取方法 |
US9269446B1 (en) | 2015-04-08 | 2016-02-23 | Sandisk Technologies Inc. | Methods to improve programming of slow cells |
US9564219B2 (en) | 2015-04-08 | 2017-02-07 | Sandisk Technologies Llc | Current based detection and recording of memory hole-interconnect spacing defects |
US9780809B2 (en) | 2015-04-30 | 2017-10-03 | Sandisk Technologies Llc | Tracking and use of tracked bit values for encoding and decoding data in unreliable memory |
US9720612B2 (en) | 2015-04-30 | 2017-08-01 | Sandisk Technologies Llc | Biasing schemes for storage of bits in unreliable storage locations |
US9653154B2 (en) | 2015-09-21 | 2017-05-16 | Sandisk Technologies Llc | Write abort detection for multi-state memories |
US10162538B2 (en) * | 2015-09-30 | 2018-12-25 | Sandisk Technologies Llc | Memory operation threshold adjustment based on bit line integrity data |
CN105468535A (zh) * | 2015-12-30 | 2016-04-06 | 北京兆易创新科技股份有限公司 | 一种NAND Flash的数据处理方法及装置 |
US10318726B2 (en) | 2016-04-18 | 2019-06-11 | Qualcomm Incorporated | Systems and methods to provide security to one time program data |
CN106055933B (zh) * | 2016-06-24 | 2019-08-23 | 武汉斗鱼网络科技有限公司 | 一种客户端软件代码校验的方法及系统 |
US9817593B1 (en) | 2016-07-11 | 2017-11-14 | Sandisk Technologies Llc | Block management in non-volatile memory system with non-blocking control sync system |
US10725933B2 (en) * | 2016-12-30 | 2020-07-28 | Intel Corporation | Method and apparatus for redirecting memory access commands sent to unusable memory partitions |
TWI630623B (zh) * | 2017-04-07 | 2018-07-21 | 力旺電子股份有限公司 | 可編程可抹除的非揮發性記憶體 |
US10134474B1 (en) * | 2017-10-20 | 2018-11-20 | Sandisk Technologies Llc | Independent state completion for each plane during flash memory programming |
US11733873B2 (en) | 2017-12-01 | 2023-08-22 | Micron Technology, Inc. | Wear leveling in solid state drives |
US10635515B2 (en) | 2017-12-06 | 2020-04-28 | Sandisk Technologies Llc | Recovery of partial memory die |
US11094148B2 (en) | 2018-06-18 | 2021-08-17 | Micron Technology, Inc. | Downloading system memory data in response to event detection |
US11101015B2 (en) | 2018-12-17 | 2021-08-24 | Micron Technology, Inc. | Multi-dimensional usage space testing of memory components |
US10910081B2 (en) * | 2018-12-17 | 2021-02-02 | Micron Technology, Inc. | Management of test resources to perform reliability testing of memory components |
US11288181B2 (en) * | 2019-03-07 | 2022-03-29 | Silicon Motion, Inc. | Flash memory initialization scheme for writing boot up information into selected pages averagely and randomly distributed over more pages and correspondingly method for reading boot up information from selected pages |
US11983035B2 (en) | 2020-06-11 | 2024-05-14 | Apple Inc. | Electronic device |
US11990200B2 (en) * | 2021-01-28 | 2024-05-21 | Micron Technology, Inc. | Bit retiring to mitigate bit errors |
US11907402B1 (en) | 2021-04-28 | 2024-02-20 | Wells Fargo Bank, N.A. | Computer-implemented methods, apparatuses, and computer program products for frequency based operations |
US11934270B2 (en) * | 2022-06-02 | 2024-03-19 | Micron Technology, Inc. | Write command execution for data protection and recovery schemes |
CN115050410B (zh) * | 2022-08-17 | 2022-11-04 | 合肥智芯半导体有限公司 | 可擦除非易失性存储器的控制装置、系统以及控制芯片 |
Family Cites Families (151)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
US3633175A (en) | 1969-05-15 | 1972-01-04 | Honeywell Inc | Defect-tolerant digital memory system |
JPS5721799B2 (zh) | 1975-02-01 | 1982-05-10 | ||
US4250570B1 (en) | 1976-07-15 | 1996-01-02 | Intel Corp | Redundant memory circuit |
US4398248A (en) | 1980-10-20 | 1983-08-09 | Mcdonnell Douglas Corporation | Adaptive WSI/MNOS solid state memory system |
US4287570A (en) | 1979-06-01 | 1981-09-01 | Intel Corporation | Multiple bit read-only memory cell and its sense amplifier |
US4252570A (en) * | 1979-12-14 | 1981-02-24 | E. I. Du Pont De Nemours And Company | Bismuth oxyhalide solid solution |
US4281398A (en) | 1980-02-12 | 1981-07-28 | Mostek Corporation | Block redundancy for memory array |
JPS5764383A (en) | 1980-10-03 | 1982-04-19 | Toshiba Corp | Address converting method and its device |
JPS5877034A (ja) | 1981-10-30 | 1983-05-10 | Hitachi Ltd | 記録方法 |
US4450559A (en) | 1981-12-24 | 1984-05-22 | International Business Machines Corporation | Memory system with selective assignment of spare locations |
US4498146A (en) | 1982-07-30 | 1985-02-05 | At&T Bell Laboratories | Management of defects in storage media |
JPS5945694A (ja) | 1982-09-06 | 1984-03-14 | Fujitsu Ltd | Rom読出し情報変更方式 |
JPS5945695A (ja) | 1982-09-07 | 1984-03-14 | Fujitsu Ltd | Icメモリ |
AU557723B2 (en) | 1982-12-17 | 1987-01-08 | Blue Circle Southern Cement Ltd. | Electronic memory system |
JPS6076097A (ja) | 1983-09-30 | 1985-04-30 | Nec Corp | 不揮発生半導体メモリ |
US4896262A (en) | 1984-02-24 | 1990-01-23 | Kabushiki Kaisha Meidensha | Emulation device for converting magnetic disc memory mode signal from computer into semiconductor memory access mode signal for semiconductor memory |
JPS618798A (ja) | 1984-06-21 | 1986-01-16 | Nec Corp | 不揮発性記憶装置 |
US4654847A (en) | 1984-12-28 | 1987-03-31 | International Business Machines | Apparatus for automatically correcting erroneous data and for storing the corrected data in a common pool alternate memory array |
JPS61208673A (ja) | 1985-03-12 | 1986-09-17 | Matsushita Electric Ind Co Ltd | 情報記録再生装置 |
US4829169A (en) | 1985-07-01 | 1989-05-09 | Toppan Moore Company, Inc. | IC card having state marker for record access |
JP2664137B2 (ja) | 1985-10-29 | 1997-10-15 | 凸版印刷株式会社 | Icカード |
US4800520A (en) | 1985-10-29 | 1989-01-24 | Kabushiki Kaisha Toshiba | Portable electronic device with garbage collection function |
US4746998A (en) | 1985-11-20 | 1988-05-24 | Seagate Technology, Inc. | Method for mapping around defective sectors in a disc drive |
US4757474A (en) | 1986-01-28 | 1988-07-12 | Fujitsu Limited | Semiconductor memory device having redundancy circuit portion |
JP2685173B2 (ja) | 1986-05-31 | 1997-12-03 | キヤノン株式会社 | メモリ書き込み制御方法 |
JPH07109717B2 (ja) | 1986-05-31 | 1995-11-22 | キヤノン株式会社 | メモリ書き込み制御方法 |
JPH0827756B2 (ja) | 1987-04-13 | 1996-03-21 | 三菱電機株式会社 | Icカード |
JPS6454543A (en) | 1987-08-25 | 1989-03-02 | Mitsubishi Electric Corp | Information processor |
JPS6470843A (en) | 1987-09-11 | 1989-03-16 | Fujitsu Ltd | Processing system for garbage collection |
US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US4914529A (en) | 1988-07-18 | 1990-04-03 | Western Digital Corp. | Data disk defect handling using relocation ID fields |
US5218691A (en) | 1988-07-26 | 1993-06-08 | Disk Emulation Systems, Inc. | Disk emulation system |
US5172338B1 (en) | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US5535328A (en) * | 1989-04-13 | 1996-07-09 | Sandisk Corporation | Non-volatile memory system card with flash erasable sectors of EEprom cells including a mechanism for substituting defective cells |
US5163021A (en) * | 1989-04-13 | 1992-11-10 | Sundisk Corporation | Multi-state EEprom read and write circuits and techniques |
EP0675502B1 (en) * | 1989-04-13 | 2005-05-25 | SanDisk Corporation | Multiple sector erase flash EEPROM system |
US5200959A (en) | 1989-10-17 | 1993-04-06 | Sundisk Corporation | Device and method for defect handling in semi-conductor memory |
US5303198A (en) | 1990-09-28 | 1994-04-12 | Fuji Photo Film Co., Ltd. | Method of recording data in memory card having EEPROM and memory card system using the same |
GB2251324B (en) | 1990-12-31 | 1995-05-10 | Intel Corp | File structure for a non-volatile semiconductor memory |
US5270979A (en) | 1991-03-15 | 1993-12-14 | Sundisk Corporation | Method for optimum erasing of EEPROM |
US5504760A (en) * | 1991-03-15 | 1996-04-02 | Sandisk Corporation | Mixed data encoding EEPROM system |
US5663901A (en) * | 1991-04-11 | 1997-09-02 | Sandisk Corporation | Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems |
JP2625609B2 (ja) * | 1991-07-10 | 1997-07-02 | インターナショナル・ビジネス・マシーンズ・コーポレイション | ディスク記憶装置 |
JP2582487B2 (ja) | 1991-07-12 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体メモリを用いた外部記憶システム及びその制御方法 |
US5430859A (en) | 1991-07-26 | 1995-07-04 | Sundisk Corporation | Solid state memory system including plural memory chips and a serialized bus |
US6230233B1 (en) * | 1991-09-13 | 2001-05-08 | Sandisk Corporation | Wear leveling techniques for flash EEPROM systems |
US5438573A (en) | 1991-09-13 | 1995-08-01 | Sundisk Corporation | Flash EEPROM array data and header file structure |
TW261687B (zh) * | 1991-11-26 | 1995-11-01 | Hitachi Seisakusyo Kk | |
JPH05151097A (ja) | 1991-11-28 | 1993-06-18 | Fujitsu Ltd | 書換回数制限型メモリのデータ管理方式 |
JP3178909B2 (ja) | 1992-01-10 | 2001-06-25 | 株式会社東芝 | 半導体メモリ装置 |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5712180A (en) | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
JPH05233426A (ja) * | 1992-02-20 | 1993-09-10 | Fujitsu Ltd | フラッシュ・メモリ使用方法 |
TW231343B (zh) * | 1992-03-17 | 1994-10-01 | Hitachi Seisakusyo Kk | |
US5532962A (en) | 1992-05-20 | 1996-07-02 | Sandisk Corporation | Soft errors handling in EEPROM devices |
JP3328321B2 (ja) * | 1992-06-22 | 2002-09-24 | 株式会社日立製作所 | 半導体記憶装置 |
US5315541A (en) | 1992-07-24 | 1994-05-24 | Sundisk Corporation | Segmented column memory array |
US5428621A (en) | 1992-09-21 | 1995-06-27 | Sundisk Corporation | Latent defect handling in EEPROM devices |
US5357475A (en) | 1992-10-30 | 1994-10-18 | Intel Corporation | Method for detaching sectors in a flash EEPROM memory array |
US5473753A (en) * | 1992-10-30 | 1995-12-05 | Intel Corporation | Method of managing defects in flash disk memories |
US5341339A (en) | 1992-10-30 | 1994-08-23 | Intel Corporation | Method for wear leveling in a flash EEPROM memory |
US5337275A (en) | 1992-10-30 | 1994-08-09 | Intel Corporation | Method for releasing space in flash EEPROM memory array to allow the storage of compressed data |
US5369616A (en) * | 1992-10-30 | 1994-11-29 | Intel Corporation | Method for assuring that an erase process for a memory array has been properly completed |
JP2856621B2 (ja) | 1993-02-24 | 1999-02-10 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置 |
JP3594626B2 (ja) * | 1993-03-04 | 2004-12-02 | 株式会社ルネサステクノロジ | 不揮発性メモリ装置 |
US5404485A (en) | 1993-03-08 | 1995-04-04 | M-Systems Flash Disk Pioneers Ltd. | Flash file system |
US5479638A (en) | 1993-03-26 | 1995-12-26 | Cirrus Logic, Inc. | Flash memory mass storage architecture incorporation wear leveling technique |
US5485595A (en) | 1993-03-26 | 1996-01-16 | Cirrus Logic, Inc. | Flash memory mass storage architecture incorporating wear leveling technique without using cam cells |
US5388083A (en) | 1993-03-26 | 1995-02-07 | Cirrus Logic, Inc. | Flash memory mass storage architecture |
US5353256A (en) | 1993-06-30 | 1994-10-04 | Intel Corporation | Block specific status information in a memory device |
US5566314A (en) | 1993-08-30 | 1996-10-15 | Lucent Technologies Inc. | Flash memory device employing unused cell arrays to update files |
US5682497A (en) * | 1993-09-28 | 1997-10-28 | Intel Corporation | Managing file structures for a flash memory file system in a computer |
US5507760A (en) * | 1993-11-09 | 1996-04-16 | Devices For Vascular Intervention, Inc. | Cutter device |
US5603001A (en) * | 1994-05-09 | 1997-02-11 | Kabushiki Kaisha Toshiba | Semiconductor disk system having a plurality of flash memories |
JP3154892B2 (ja) * | 1994-05-10 | 2001-04-09 | 株式会社東芝 | Icメモリカードおよびそのicメモリカードの検査方法 |
JP3507132B2 (ja) * | 1994-06-29 | 2004-03-15 | 株式会社日立製作所 | フラッシュメモリを用いた記憶装置およびその記憶制御方法 |
FR2728380A1 (fr) | 1994-12-20 | 1996-06-21 | Sgs Thomson Microelectronics | Procede d'ecriture de donnees dans une memoire et memoire electriquement programmable correspondante |
JP3706167B2 (ja) * | 1995-02-16 | 2005-10-12 | 株式会社ルネサステクノロジ | 半導体ディスク装置 |
JP2671860B2 (ja) * | 1995-03-30 | 1997-11-05 | 日本電気株式会社 | フラッシュメモリ用ファイルシステム |
US5579259A (en) | 1995-05-31 | 1996-11-26 | Sandisk Corporation | Low voltage erase of a flash EEPROM system having a common erase electrode for two individually erasable sectors |
US5930815A (en) | 1995-07-31 | 1999-07-27 | Lexar Media, Inc. | Moving sequential sectors within a block of information in a flash memory mass storage architecture |
US5907856A (en) | 1995-07-31 | 1999-05-25 | Lexar Media, Inc. | Moving sectors within a block of information in a flash memory mass storage architecture |
US6081878A (en) | 1997-03-31 | 2000-06-27 | Lexar Media, Inc. | Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices |
US5845313A (en) * | 1995-07-31 | 1998-12-01 | Lexar | Direct logical block addressing flash memory mass storage architecture |
US5838614A (en) | 1995-07-31 | 1998-11-17 | Lexar Microsystems, Inc. | Identification and verification of a sector within a block of mass storage flash memory |
US6125435A (en) | 1995-09-13 | 2000-09-26 | Lexar Media, Inc. | Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory |
US5835935A (en) | 1995-09-13 | 1998-11-10 | Lexar Media, Inc. | Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory |
JP3604466B2 (ja) * | 1995-09-13 | 2004-12-22 | 株式会社ルネサステクノロジ | フラッシュディスクカード |
US5597370A (en) * | 1995-10-17 | 1997-01-28 | Chrysler Corporation | Lubricating device for a planetary gear unit |
US6014724A (en) * | 1995-10-27 | 2000-01-11 | Scm Microsystems (U.S.) Inc. | Flash translation layer block indication map revision system and method |
US5712179A (en) | 1995-10-31 | 1998-01-27 | Sandisk Corporation | Method of making triple polysilicon flash EEPROM arrays having a separate erase gate for each row of floating gates |
GB9609833D0 (en) | 1996-05-10 | 1996-07-17 | Memory Corp Plc | Memory device |
US5787484A (en) * | 1996-08-08 | 1998-07-28 | Micron Technology, Inc. | System and method which compares data preread from memory cells to data to be written to the cells |
US5798968A (en) | 1996-09-24 | 1998-08-25 | Sandisk Corporation | Plane decode/virtual sector architecture |
KR19980027107A (ko) * | 1996-10-14 | 1998-07-15 | 김광호 | 전기분해식 오수정화장치 및 방법과 오수정화장치를 갖는 세탁기 |
US5754567A (en) * | 1996-10-15 | 1998-05-19 | Micron Quantum Devices, Inc. | Write reduction in flash memory systems through ECC usage |
JPH10124381A (ja) * | 1996-10-21 | 1998-05-15 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6047352A (en) * | 1996-10-29 | 2000-04-04 | Micron Technology, Inc. | Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure |
US5890192A (en) | 1996-11-05 | 1999-03-30 | Sandisk Corporation | Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM |
US5714412A (en) * | 1996-12-02 | 1998-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd | Multi-level, split-gate, flash memory cell and method of manufacture thereof |
US5835413A (en) | 1996-12-20 | 1998-11-10 | Intel Corporation | Method for improved data retention in a nonvolatile writeable memory by sensing and reprogramming cell voltage levels |
US5963970A (en) * | 1996-12-20 | 1999-10-05 | Intel Corporation | Method and apparatus for tracking erase cycles utilizing active and inactive wear bar blocks having first and second count fields |
US5928370A (en) | 1997-02-05 | 1999-07-27 | Lexar Media, Inc. | Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure |
US5953737A (en) | 1997-03-31 | 1999-09-14 | Lexar Media, Inc. | Method and apparatus for performing erase operations transparent to a solid state storage system |
US6122195A (en) | 1997-03-31 | 2000-09-19 | Lexar Media, Inc. | Method and apparatus for decreasing block write operation times performed on nonvolatile memory |
US6034897A (en) | 1999-04-01 | 2000-03-07 | Lexar Media, Inc. | Space management for managing high capacity nonvolatile memory |
JP3821536B2 (ja) * | 1997-05-16 | 2006-09-13 | 沖電気工業株式会社 | 不揮発性半導体ディスク装置 |
US5930167A (en) | 1997-07-30 | 1999-07-27 | Sandisk Corporation | Multi-state non-volatile flash memory capable of being its own two state write cache |
JP4079506B2 (ja) * | 1997-08-08 | 2008-04-23 | 株式会社東芝 | 不揮発性半導体メモリシステムの制御方法 |
US6000006A (en) * | 1997-08-25 | 1999-12-07 | Bit Microsystems, Inc. | Unified re-map and cache-index table with dual write-counters for wear-leveling of non-volatile flash RAM mass storage |
US5909449A (en) | 1997-09-08 | 1999-06-01 | Invox Technology | Multibit-per-cell non-volatile memory with error detection and correction |
US5937425A (en) * | 1997-10-16 | 1999-08-10 | M-Systems Flash Disk Pioneers Ltd. | Flash file system optimized for page-mode flash technologies |
JPH11203191A (ja) * | 1997-11-13 | 1999-07-30 | Seiko Epson Corp | 不揮発性記憶装置、不揮発性記憶装置の制御方法、および、不揮発性記憶装置を制御するプログラムを記録した情報記録媒体 |
US6034891A (en) * | 1997-12-01 | 2000-03-07 | Micron Technology, Inc. | Multi-state flash memory defect management |
US6076137A (en) | 1997-12-11 | 2000-06-13 | Lexar Media, Inc. | Method and apparatus for storing location identification information within non-volatile memory devices |
US6040997A (en) | 1998-03-25 | 2000-03-21 | Lexar Media, Inc. | Flash memory leveling architecture having no external latch |
JP4085478B2 (ja) * | 1998-07-28 | 2008-05-14 | ソニー株式会社 | 記憶媒体及び電子機器システム |
US6288861B1 (en) * | 1998-09-15 | 2001-09-11 | International Business Machines Corporation | Disk drive with sector numbers encoded by sequences of sector types |
WO2000030116A1 (en) | 1998-11-17 | 2000-05-25 | Lexar Media, Inc. | Method and apparatus for memory control circuit |
GB9903490D0 (en) * | 1999-02-17 | 1999-04-07 | Memory Corp Plc | Memory system |
US6041001A (en) | 1999-02-25 | 2000-03-21 | Lexar Media, Inc. | Method of increasing data reliability of a flash memory device without compromising compatibility |
US6233308B1 (en) | 1999-03-19 | 2001-05-15 | General Electric Company | Methods and apparatus for artifact compensation with variable angular sampling |
US6141249A (en) | 1999-04-01 | 2000-10-31 | Lexar Media, Inc. | Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time |
US6151248A (en) | 1999-06-30 | 2000-11-21 | Sandisk Corporation | Dual floating gate EEPROM cell array with steering gates shared by adjacent cells |
JP4165990B2 (ja) * | 1999-12-20 | 2008-10-15 | Tdk株式会社 | メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びに、フラッシュメモリへのデータの書き込み方法 |
JP2001243110A (ja) | 1999-12-20 | 2001-09-07 | Tdk Corp | メモリコントローラ、フラッシュメモリシステム及びフラッシュメモリへのアクセス方法 |
US7111190B2 (en) * | 2001-02-23 | 2006-09-19 | Intel Corporation | Method and apparatus for reconfigurable memory |
US6426893B1 (en) * | 2000-02-17 | 2002-07-30 | Sandisk Corporation | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
JP4632107B2 (ja) * | 2000-06-29 | 2011-02-16 | エルピーダメモリ株式会社 | 半導体記憶装置 |
US7155559B1 (en) | 2000-08-25 | 2006-12-26 | Lexar Media, Inc. | Flash memory architecture with separate storage of overhead and user data |
US6941505B2 (en) * | 2000-09-12 | 2005-09-06 | Hitachi, Ltd. | Data processing system and data processing method |
US6345001B1 (en) * | 2000-09-14 | 2002-02-05 | Sandisk Corporation | Compressed event counting technique and application to a flash memory system |
US6684289B1 (en) * | 2000-11-22 | 2004-01-27 | Sandisk Corporation | Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory |
JP3938842B2 (ja) * | 2000-12-04 | 2007-06-27 | 富士通株式会社 | 半導体記憶装置 |
US6763424B2 (en) * | 2001-01-19 | 2004-07-13 | Sandisk Corporation | Partial block data programming and reading operations in a non-volatile memory |
US7254668B1 (en) * | 2002-10-28 | 2007-08-07 | Sandisk Corporation | Method and apparatus for grouping pages within a block |
KR100457812B1 (ko) * | 2002-11-14 | 2004-11-18 | 삼성전자주식회사 | 플래시 메모리, 그에 따른 플래시 메모리 액세스 장치 및방법 |
JP2004348818A (ja) * | 2003-05-20 | 2004-12-09 | Sharp Corp | 半導体記憶装置の書込制御方法及びシステム並びに携帯電子機器 |
US20060164907A1 (en) * | 2003-07-22 | 2006-07-27 | Micron Technology, Inc. | Multiple flash memory device management |
US7433993B2 (en) * | 2003-12-30 | 2008-10-07 | San Disk Corportion | Adaptive metablocks |
US7139864B2 (en) * | 2003-12-30 | 2006-11-21 | Sandisk Corporation | Non-volatile memory and method with block management system |
JP4427361B2 (ja) * | 2004-03-16 | 2010-03-03 | 株式会社東芝 | 不揮発性半導体メモリ |
US7315917B2 (en) * | 2005-01-20 | 2008-01-01 | Sandisk Corporation | Scheduling of housekeeping operations in flash memory systems |
US7529905B2 (en) * | 2005-10-13 | 2009-05-05 | Sandisk Corporation | Method of storing transformed units of data in a memory system having fixed sized storage blocks |
US8339865B2 (en) * | 2007-11-01 | 2012-12-25 | Spansion Israel Ltd | Non binary flash array architecture and method of operation |
JP5010444B2 (ja) * | 2007-11-29 | 2012-08-29 | 株式会社東芝 | 半導体記憶装置およびその駆動方法 |
US8094500B2 (en) * | 2009-01-05 | 2012-01-10 | Sandisk Technologies Inc. | Non-volatile memory and method with write cache partitioning |
US8040744B2 (en) * | 2009-01-05 | 2011-10-18 | Sandisk Technologies Inc. | Spare block management of non-volatile memories |
US7944729B2 (en) | 2009-01-28 | 2011-05-17 | Seagate Technology Llc | Simultaneously writing multiple addressable blocks of user data to a resistive sense memory cell array |
US9424930B2 (en) * | 2010-09-15 | 2016-08-23 | Sandisk Technologies Llc | Apparatus, system, and method for non-volatile storage element programming |
-
2000
- 2000-02-17 US US09/505,555 patent/US6426893B1/en not_active Expired - Lifetime
-
2001
- 2001-02-13 AU AU2001238404A patent/AU2001238404A1/en not_active Abandoned
- 2001-02-13 CN CNB018068049A patent/CN100458674C/zh not_active Expired - Lifetime
- 2001-02-13 WO PCT/US2001/005052 patent/WO2001061703A2/en active Application Filing
- 2001-02-13 KR KR1020027010577A patent/KR100663738B1/ko active IP Right Grant
-
2002
- 2002-06-21 US US10/176,880 patent/US6580638B2/en not_active Expired - Lifetime
-
2003
- 2003-04-23 US US10/422,216 patent/US6760255B2/en not_active Expired - Lifetime
-
2004
- 2004-02-20 HK HK04101214.4A patent/HK1058563A1/xx not_active IP Right Cessation
- 2004-05-06 US US10/841,406 patent/US6996008B2/en not_active Expired - Lifetime
-
2005
- 2005-12-29 US US11/323,576 patent/US7184306B2/en not_active Expired - Lifetime
-
2007
- 2007-02-26 US US11/679,012 patent/US7362613B2/en not_active Expired - Lifetime
-
2008
- 2008-04-02 US US12/061,020 patent/US7532511B2/en not_active Expired - Fee Related
-
2009
- 2009-03-12 US US12/402,955 patent/US7646666B2/en not_active Expired - Fee Related
- 2009-03-12 US US12/403,014 patent/US7646667B2/en not_active Expired - Fee Related
- 2009-11-03 US US12/611,280 patent/US7889590B2/en not_active Expired - Fee Related
- 2009-11-23 US US12/624,258 patent/US7889554B2/en not_active Expired - Fee Related
-
2011
- 2011-02-14 US US13/027,055 patent/US8223547B2/en not_active Expired - Fee Related
-
2012
- 2012-07-16 US US13/550,157 patent/US8503240B2/en not_active Expired - Fee Related
-
2013
- 2013-08-01 US US13/957,234 patent/US8797798B2/en not_active Expired - Fee Related
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101630279B (zh) * | 2003-10-03 | 2012-08-15 | 桑迪士克股份有限公司 | 快闪存储器数据校正及擦除技术 |
US7454670B2 (en) | 2004-01-27 | 2008-11-18 | Samsung Electronics Co., Ltd. | Data management apparatus and method of flash memory |
CN100334565C (zh) * | 2004-01-27 | 2007-08-29 | 三星电子株式会社 | 闪速存储器的数据管理设备和方法 |
CN100347656C (zh) * | 2004-07-19 | 2007-11-07 | 普安科技股份有限公司 | 储存虚拟化控制器间动态逻辑媒体单元重新指定方法 |
CN101218557B (zh) * | 2005-07-05 | 2011-09-28 | 国际商业机器公司 | 用于存储器迁移的系统和方法 |
CN101496110B (zh) * | 2006-05-12 | 2013-02-13 | 苹果公司 | 存储设备中的失真估计和消除 |
CN101589437B (zh) * | 2006-11-27 | 2012-08-29 | 桑迪士克股份有限公司 | 用于验证编程的分段位扫描 |
CN101241752A (zh) * | 2007-02-06 | 2008-08-13 | 三星电子株式会社 | 存储卡和包含所述存储卡的存储系统 |
US8683116B2 (en) | 2007-12-27 | 2014-03-25 | SanDisk Technologies, Inc. | Controller for one type of NAND flash memory for emulating another type of NAND flash memory |
CN101946286B (zh) * | 2007-12-27 | 2014-06-18 | 桑迪士克以色列有限公司 | 用于模拟每单元单个位的nand闪存的每单元多个位的nand闪存的控制器 |
CN102473126A (zh) * | 2009-08-11 | 2012-05-23 | 桑迪士克科技股份有限公司 | 提供闪存系统中的读状态和空闲块管理信息的控制器和方法 |
CN102629237A (zh) * | 2011-02-04 | 2012-08-08 | 西部数据技术公司 | 非易失性半导体存储器的多个器件的并行搜索 |
CN102629237B (zh) * | 2011-02-04 | 2016-09-14 | 西部数据技术公司 | 非易失性半导体存储器及搜索最后写入地址的方法 |
CN111241003A (zh) * | 2018-11-29 | 2020-06-05 | 美光科技公司 | 使用数据写入计数器使非易失性存储器的耗损均衡 |
CN112083887A (zh) * | 2020-09-10 | 2020-12-15 | 深圳芯邦科技股份有限公司 | 一种数据处理方法及相关设备 |
CN112083887B (zh) * | 2020-09-10 | 2023-09-15 | 深圳芯邦科技股份有限公司 | 一种数据处理方法及相关设备 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100458674C (zh) | 多数据区段同时编程和在其它指定块中存储物理块特征的闪速eeprom系统 | |
CN1110053C (zh) | 将数据写入电可擦可编程只读存储器阵列的方法 | |
CN110874188B (zh) | 数据存储装置、其操作方法以及具有其的存储系统 | |
CN100555465C (zh) | 操作非易失性存储系统的存储系统电路及方法 | |
CN101427225B (zh) | 数据区段尺寸不同于存储器页面和/或区块尺寸之非易失性存储器系统的操作技术 | |
CN102549554B (zh) | 基于条带的存储器操作 | |
CN100487672C (zh) | 用于分割一逻辑块的方法及设备 | |
US8631310B2 (en) | Method for reducing uncorrectable errors of a memory device regarding error correction code, and associated memory device and controller thereof | |
JP2008527586A (ja) | オンチップデータのグループ化および整列 | |
US10877853B2 (en) | Data storage device and operation method optimized for recovery performance, and storage system having the same | |
CN101408864B (zh) | 用于断电时的数据保护方法及使用此方法的控制器 | |
US20200081649A1 (en) | Data storage device, operation method thereof and storage system including the same | |
CN102880432A (zh) | 利用数据有限寿命提高闪存芯片写入速度的方法、系统及其控制器 | |
CN111258494A (zh) | 数据存储装置及操作方法、具有数据存储装置的存储系统 | |
US20210333999A1 (en) | Data storage device, operation method thereof and storage system having the same | |
CN102141944B (zh) | 用来减少无法更正的错误的方法以及记忆装置及其控制器 | |
CN114625309A (zh) | 数据存储设备及其操作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1058563 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1058563 Country of ref document: HK |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160525 Address after: texas Patentee after: Sandisk Corp. Address before: American California Patentee before: Sandisk Corp. |
|
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: texas Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: texas Patentee before: Sandisk Corp. |
|
CX01 | Expiry of patent term |
Granted publication date: 20090204 |
|
CX01 | Expiry of patent term |