TW261687B - - Google Patents

Info

Publication number
TW261687B
TW261687B TW081109268A TW81109268A TW261687B TW 261687 B TW261687 B TW 261687B TW 081109268 A TW081109268 A TW 081109268A TW 81109268 A TW81109268 A TW 81109268A TW 261687 B TW261687 B TW 261687B
Authority
TW
Taiwan
Application number
TW081109268A
Original Assignee
Hitachi Seisakusyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27459494&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW261687(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP9989192A external-priority patent/JP3231832B2/ja
Application filed by Hitachi Seisakusyo Kk filed Critical Hitachi Seisakusyo Kk
Application granted granted Critical
Publication of TW261687B publication Critical patent/TW261687B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G11C29/765—Masking faults in memories by using spares or by reconfiguring using address translation or modifications in solid state disks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2022—Flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0662—Virtualisation aspects
    • G06F3/0664—Virtualisation aspects at device level, e.g. emulation of a storage device or system

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
TW081109268A 1991-11-26 1992-11-19 TW261687B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP31084891 1991-11-26
JP31429791 1991-11-28
JP3175692 1992-02-19
JP9989192A JP3231832B2 (ja) 1991-11-26 1992-04-20 フラッシュメモリを記憶媒体とした半導体ディスク

Publications (1)

Publication Number Publication Date
TW261687B true TW261687B (zh) 1995-11-01

Family

ID=27459494

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081109268A TW261687B (zh) 1991-11-26 1992-11-19

Country Status (5)

Country Link
US (3) US5644539A (zh)
EP (1) EP0548564B1 (zh)
KR (1) KR960012360B1 (zh)
DE (1) DE69227499T2 (zh)
TW (1) TW261687B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7779227B2 (en) 2006-08-18 2010-08-17 Realtek Semiconductor Corp. Memory management apparatus and method for optical storage system

Families Citing this family (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69033438T2 (de) * 1989-04-13 2000-07-06 Sandisk Corp., Santa Clara Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US7190617B1 (en) * 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system
US6347051B2 (en) * 1991-11-26 2002-02-12 Hitachi, Ltd. Storage device employing a flash memory
US5359570A (en) * 1992-11-13 1994-10-25 Silicon Storage Technology, Inc. Solid state peripheral storage device
US7137011B1 (en) * 1993-09-01 2006-11-14 Sandisk Corporation Removable mother/daughter peripheral card
US5887145A (en) * 1993-09-01 1999-03-23 Sandisk Corporation Removable mother/daughter peripheral card
JP2669365B2 (ja) * 1994-11-24 1997-10-27 日本電気株式会社 書換え可能なｒｏｍファイル装置
JP3706167B2 (ja) * 1995-02-16 2005-10-12 株式会社ルネサステクノロジ 半導体ディスク装置
JP3782840B2 (ja) * 1995-07-14 2006-06-07 株式会社ルネサステクノロジ 外部記憶装置およびそのメモリアクセス制御方法
JP3604466B2 (ja) * 1995-09-13 2004-12-22 株式会社ルネサステクノロジ フラッシュディスクカード
JPH09171486A (ja) * 1995-10-16 1997-06-30 Seiko Epson Corp Ｐｃカード
US5893135A (en) * 1995-12-27 1999-04-06 Intel Corporation Flash memory array with two interfaces for responding to RAS and CAS signals
JPH09237162A (ja) * 1996-02-23 1997-09-09 Hewlett Packard Co <Hp> 走査型データ記憶システム、及びその針摩耗管理方法、媒体摩耗管理方法、並びに残存寿命表示装置
JP3614173B2 (ja) 1996-02-29 2005-01-26 株式会社ルネサステクノロジ 部分不良メモリを搭載した半導体記憶装置
FR2748134B1 (fr) * 1996-04-30 1998-06-26 Bull Cp8 Procede et dispositif permettant a un programme fige de pouvoir evoluer
JPH09297677A (ja) * 1996-05-02 1997-11-18 Fujitsu Ltd 一部のデータ群を消去可能としたｆｉｆｏバッファ
ATE225961T1 (de) * 1996-08-16 2002-10-15 Tokyo Electron Device Ltd Halbleiterspeicheranordnung mit fehlerdetektion und -korrektur
JPH10154101A (ja) * 1996-11-26 1998-06-09 Toshiba Corp データ記憶システム及び同システムに適用するキャッシュ制御方法
US6845046B1 (en) 1997-01-31 2005-01-18 Renesas Technology Corp. Microcomputer and microprocessor having flash memory operable from single external power supply
US7023729B2 (en) * 1997-01-31 2006-04-04 Renesas Technology Corp. Microcomputer and microprocessor having flash memory operable from single external power supply
US5991221A (en) 1998-01-30 1999-11-23 Hitachi, Ltd. Microcomputer and microprocessor having flash memory operable from single external power supply
KR100251636B1 (ko) * 1997-04-10 2000-05-01 윤종용 소형컴퓨터시스템인터페이스방식접속을위한메모리장치
US5930167A (en) * 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
KR19990019377A (ko) * 1997-08-29 1999-03-15 윤종용 플래시 메모리 이용 보조기억장치 및 그 방법
US5937425A (en) * 1997-10-16 1999-08-10 M-Systems Flash Disk Pioneers Ltd. Flash file system optimized for page-mode flash technologies
GB9806687D0 (en) * 1998-03-27 1998-05-27 Memory Corp Plc Memory system
US6108236A (en) * 1998-07-17 2000-08-22 Advanced Technology Materials, Inc. Smart card comprising integrated circuitry including EPROM and error check and correction system
JP2000067574A (ja) * 1998-08-21 2000-03-03 Mitsubishi Electric Corp 半導体記憶装置
JP3242890B2 (ja) * 1998-12-16 2001-12-25 株式会社ハギワラシスコム 記憶装置
JP3219064B2 (ja) * 1998-12-28 2001-10-15 インターナショナル・ビジネス・マシーンズ・コーポレーション デジタルデータ認証システム
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
US6535949B1 (en) 1999-04-19 2003-03-18 Research In Motion Limited Portable electronic device having a log-structured file system in flash memory
KR100703680B1 (ko) * 1999-10-14 2007-04-05 삼성전자주식회사 플래시 파일 시스템
US6426893B1 (en) * 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
WO2001084490A1 (en) * 2000-04-28 2001-11-08 Hitachi,Ltd Ic card
WO2001088720A2 (en) 2000-05-15 2001-11-22 Superspeed Software, Inc. System and method for high-speed substitute cache
US6820148B1 (en) 2000-08-17 2004-11-16 Sandisk Corporation Multiple removable non-volatile memory cards serially communicating with a host
JP4031190B2 (ja) * 2000-09-29 2008-01-09 株式会社東芝 メモリカード、不揮発性メモリ、不揮発性メモリのデータ書き込み方法及びデータ書き込み装置
JP4534336B2 (ja) * 2000-10-13 2010-09-01 ソニー株式会社 メモリ装置におけるデータ管理方法
JP2002132574A (ja) * 2000-10-26 2002-05-10 Mitsubishi Electric Corp 携帯電話
JP4037605B2 (ja) * 2000-12-04 2008-01-23 株式会社東芝 不揮発性メモリユニットのコントローラ、同コントローラを有するメモリシステム及び不揮発性メモリユニットの制御方法
US7062602B1 (en) 2001-04-09 2006-06-13 Matrix Semiconductor, Inc. Method for reading data in a write-once memory device using a write-many file system
US7003619B1 (en) 2001-04-09 2006-02-21 Matrix Semiconductor, Inc. Memory device and method for storing and reading a file system structure in a write-once memory array
US6895490B1 (en) * 2001-04-09 2005-05-17 Matrix Semiconductor, Inc. Method for making a write-once memory device read compatible with a write-many file system
US6996660B1 (en) 2001-04-09 2006-02-07 Matrix Semiconductor, Inc. Memory device and method for storing and reading data in a write-once memory array
TWI240864B (en) * 2001-06-13 2005-10-01 Hitachi Ltd Memory device
WO2003003278A1 (en) * 2001-06-28 2003-01-09 Trek 2000 International Ltd. A portable device having biometrics-based authentication capabilities
JP2003036681A (ja) * 2001-07-23 2003-02-07 Hitachi Ltd 不揮発性記憶装置
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6717847B2 (en) * 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
JP2003140980A (ja) * 2001-10-31 2003-05-16 Hitachi Ltd 記録装置
US6621739B2 (en) 2002-01-18 2003-09-16 Sandisk Corporation Reducing the effects of noise in non-volatile memories through multiple reads
US6542407B1 (en) 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
DE60332091D1 (de) 2002-01-31 2010-05-27 Panasonic Corp Informationsverarbeitungsvorrichtung, speicherverwaltungsvorrichtung, speicherverwaltungsverfahren und informationsverarbeitungsverfahren
TWI241481B (en) * 2002-06-25 2005-10-11 Lite On Technology Corp Repeated burning method of flash memory program
KR20040023843A (ko) * 2002-09-12 2004-03-20 삼성전기주식회사 메모리의 결함 처리 장치 및 그 방법
KR20040028469A (ko) 2002-09-30 2004-04-03 엘지전자 주식회사 1 회 기록 가능한 광디스크의 디펙트 영역 관리방법
US7233550B2 (en) * 2002-09-30 2007-06-19 Lg Electronics Inc. Write-once optical disc, and method and apparatus for recording management information on write-once optical disc
JP4058322B2 (ja) * 2002-10-07 2008-03-05 株式会社ルネサステクノロジ メモリカード
US6985992B1 (en) * 2002-10-28 2006-01-10 Sandisk Corporation Wear-leveling in non-volatile storage systems
BRPI0317147B1 (pt) 2002-12-11 2016-04-26 Lg Electronics Inc aparelho e método para gravação de dados em um meio de gravação apenas uma vez, aparelho e método para reprodução de dados de um meio de gravação apenas uma vez e referido meio de gravação apenas uma vez
US7051251B2 (en) * 2002-12-20 2006-05-23 Matrix Semiconductor, Inc. Method for storing data in a write-once memory array using a write-many file system
TWI314315B (en) 2003-01-27 2009-09-01 Lg Electronics Inc Optical disc of write once type, method, and apparatus for managing defect information on the optical disc
US7672204B2 (en) * 2003-01-27 2010-03-02 Lg Electronics Inc. Optical disc, method and apparatus for managing a defective area on an optical disc
WO2004068913A1 (ja) * 2003-01-28 2004-08-12 Semiconductor Energy Laboratory Co., Ltd. 発光素子およびその作製方法
US20040193782A1 (en) * 2003-03-26 2004-09-30 David Bordui Nonvolatile intelligent flash cache memory
KR100526186B1 (ko) * 2003-04-04 2005-11-03 삼성전자주식회사 플래시 메모리의 오류블록 관리방법 및 장치
US6865122B2 (en) * 2003-04-11 2005-03-08 Intel Corporation Reclaiming blocks in a block-alterable memory
JP2004326278A (ja) * 2003-04-23 2004-11-18 Renesas Technology Corp 不揮発性記憶装置及びデータ処理装置
MXPA05012044A (es) * 2003-05-09 2006-02-03 Lg Electronics Inc Disco optico de una sola escritura, metodo y aparato par recuperacion de informacion de administracion de disco del disco optico de una sola escritura.
RU2385509C2 (ru) * 2003-05-09 2010-03-27 Эл Джи Электроникс Инк. Неперезаписываемый оптический диск и способ и устройство для восстановления управляющей информации диска с неперезаписываемого оптического диска
US7313065B2 (en) * 2003-08-05 2007-12-25 Lg Electronics Inc. Write-once optical disc, and method and apparatus for recording/reproducing management information on/from optical disc
US7480760B2 (en) * 2003-12-17 2009-01-20 Wegener Communications, Inc. Rotational use of memory to minimize write cycles
JP2005258851A (ja) * 2004-03-12 2005-09-22 Renesas Technology Corp メモリカード
KR101113866B1 (ko) * 2004-03-19 2012-03-02 엘지전자 주식회사 기록매체내에 기록되는 데이터 구조 및 데이터 기록방법과기록장치
JP4209820B2 (ja) 2004-07-15 2009-01-14 株式会社ハギワラシスコム メモリカードシステム及び該メモリカードシステムで使用されるライトワンス型メモリカード、ホストシステムと半導体記憶デバイスとからなるシステム
US7398348B2 (en) * 2004-08-24 2008-07-08 Sandisk 3D Llc Method and apparatus for using a one-time or few-time programmable memory with a host device designed for erasable/rewritable memory
US7464306B1 (en) * 2004-08-27 2008-12-09 Lexar Media, Inc. Status of overall health of nonvolatile memory
US7500137B2 (en) * 2004-09-14 2009-03-03 Lg Electronics Inc. Recording medium, and method and apparatus of recording and reproducing data on the same
US7441067B2 (en) 2004-11-15 2008-10-21 Sandisk Corporation Cyclic flash memory wear leveling
US7315917B2 (en) * 2005-01-20 2008-01-01 Sandisk Corporation Scheduling of housekeeping operations in flash memory systems
US20060161724A1 (en) * 2005-01-20 2006-07-20 Bennett Alan D Scheduling of housekeeping operations in flash memory systems
US20060184717A1 (en) * 2005-02-17 2006-08-17 Intel Corporation Integrated circuit capable of flash memory storage management
US7543179B2 (en) * 2005-03-21 2009-06-02 Intel Corporation Error management topologies
JP4523639B2 (ja) * 2005-03-24 2010-08-11 富士通株式会社 ファームウェアによるメモリエラーアドレス管理
ITMI20050799A1 (it) 2005-05-03 2006-11-04 Atmel Corp Metodo e sistema di configurazione dei parametri per una memoria flash
US20060282610A1 (en) * 2005-06-08 2006-12-14 M-Systems Flash Disk Pioneers Ltd. Flash memory with programmable endurance
US7523381B2 (en) * 2005-09-01 2009-04-21 Micron Technology, Inc. Non-volatile memory with error detection
US7441068B2 (en) 2006-01-06 2008-10-21 Phison Electronics Corp. Flash memory and method for utilizing the same
SG134195A1 (en) * 2006-01-23 2007-08-29 Phison Electronics Corp Flash memory and method for utilizing the same
JP4804218B2 (ja) * 2006-05-11 2011-11-02 株式会社日立製作所 記憶媒体への書き込み回数を管理する計算機システム及びその制御方法
JP4487978B2 (ja) * 2006-06-28 2010-06-23 セイコーエプソン株式会社 半導体記憶装置管理システム、プログラム、半導体記憶装置の管理方法
US20080091901A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Method for non-volatile memory with worst-case control data management
US20080091871A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Non-volatile memory with worst-case control data management
US7747813B2 (en) * 2006-11-24 2010-06-29 Sandforce, Inc. Multi-memory device system and method for managing a lifetime thereof
US7904619B2 (en) 2006-11-24 2011-03-08 Sandforce, Inc. System, method, and computer program product for reducing memory write operations using difference information
US7809900B2 (en) * 2006-11-24 2010-10-05 Sandforce, Inc. System, method, and computer program product for delaying an operation that reduces a lifetime of memory
DE112006004187B4 (de) 2006-12-27 2015-09-10 Intel Corporation Verfahren, nicht-flüchtige Speichervorrichtung und Computersystem zum initiativen Abnutzungsausgleich für einen nicht-flüchtigen Speicher
KR100799688B1 (ko) * 2007-01-03 2008-02-01 삼성전자주식회사 백업 회로를 갖는 메모리 시스템 및 그것의 프로그램 방법
KR100813630B1 (ko) * 2007-02-07 2008-03-14 삼성전자주식회사 독출 성능을 향상할 수 있는 플래시 메모리 시스템 및그것의 독출 방법
JP4912174B2 (ja) 2007-02-07 2012-04-11 株式会社日立製作所 ストレージシステム及び記憶管理方法
KR100888261B1 (ko) * 2007-02-22 2009-03-11 삼성전자주식회사 뱅크 ｉｄ를 이용할 수 있는 메모리 서브 시스템과 그 방법
KR100909358B1 (ko) * 2007-04-16 2009-07-24 삼성전자주식회사 신뢰성 높은 초기화 데이터를 제공하는 플래시 메모리 장치및 그것의 초기화 방법
US7903486B2 (en) 2007-11-19 2011-03-08 Sandforce, Inc. System, method, and computer program product for increasing a lifetime of a plurality of blocks of memory
JP5218228B2 (ja) * 2008-04-23 2013-06-26 新東工業株式会社 搬送装置及びブラスト加工装置
JP2009266349A (ja) * 2008-04-28 2009-11-12 Toshiba Corp 不揮発性半導体記憶装置
JP5374075B2 (ja) * 2008-06-06 2013-12-25 エイチジーエスティーネザーランドビーブイ ディスク装置及びその制御方法
US7974119B2 (en) 2008-07-10 2011-07-05 Seagate Technology Llc Transmission gate-based spin-transfer torque memory unit
US20100082903A1 (en) * 2008-09-30 2010-04-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory drive, information processing apparatus and data access control method of the non-volatile semiconductor memory drive
US7885097B2 (en) * 2008-10-10 2011-02-08 Seagate Technology Llc Non-volatile memory array with resistive sense element block erase and uni-directional write
US9030867B2 (en) * 2008-10-20 2015-05-12 Seagate Technology Llc Bipolar CMOS select device for resistive sense memory
US7936580B2 (en) * 2008-10-20 2011-05-03 Seagate Technology Llc MRAM diode array and access method
US8045412B2 (en) * 2008-10-21 2011-10-25 Seagate Technology Llc Multi-stage parallel data transfer
US7936583B2 (en) * 2008-10-30 2011-05-03 Seagate Technology Llc Variable resistive memory punchthrough access method
US7825478B2 (en) * 2008-11-07 2010-11-02 Seagate Technology Llc Polarity dependent switch for resistive sense memory
US8178864B2 (en) 2008-11-18 2012-05-15 Seagate Technology Llc Asymmetric barrier diode
US8203869B2 (en) 2008-12-02 2012-06-19 Seagate Technology Llc Bit line charge accumulation sensing for resistive changing memory
US8040713B2 (en) 2009-01-13 2011-10-18 Seagate Technology Llc Bit set modes for a resistive sense memory cell array
US8688893B2 (en) * 2009-06-23 2014-04-01 Intel Mobile Communications GmbH Memory device and memory interface
US8159856B2 (en) 2009-07-07 2012-04-17 Seagate Technology Llc Bipolar select device for resistive sense memory
US8158964B2 (en) 2009-07-13 2012-04-17 Seagate Technology Llc Schottky diode switch and memory units containing the same
US8484414B2 (en) * 2009-08-31 2013-07-09 Hitachi, Ltd. Storage system having plurality of flash packages
US8230255B2 (en) * 2009-12-15 2012-07-24 International Business Machines Corporation Blocking write acces to memory modules of a solid state drive
WO2011089835A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR101541040B1 (ko) 2010-03-12 2015-08-03 엘에스아이 코포레이션 플래시 메모리들을 위한 ｌｄｐｃ 소거 디코딩
US9396104B1 (en) 2010-03-22 2016-07-19 Seagate Technology, Llc Accessing compressed data of varying-sized quanta in non-volatile memory
US8416624B2 (en) 2010-05-21 2013-04-09 SanDisk Technologies, Inc. Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
KR20120003283A (ko) * 2010-07-02 2012-01-10 삼성전자주식회사 데이터 저장 장치 및 그것의 배드 블록 관리 방법
US8719663B2 (en) 2010-12-12 2014-05-06 Lsi Corporation Cross-decoding for non-volatile storage
US8648426B2 (en) 2010-12-17 2014-02-11 Seagate Technology Llc Tunneling transistors
JP2014513484A (ja) 2011-04-29 2014-05-29 エルエスアイ コーポレーション 暗号化トランスポート・ソリッドステート・ディスク・コントローラ
CN103377129B (zh) * 2012-04-11 2016-04-06 群联电子股份有限公司 数据写入方法、存储器控制器与存储器储存装置
US8856611B2 (en) 2012-08-04 2014-10-07 Lsi Corporation Soft-decision compensation for flash channel variation
US8839073B2 (en) * 2012-05-04 2014-09-16 Lsi Corporation Zero-one balance management in a solid-state disk controller
KR101949671B1 (ko) 2012-06-28 2019-04-25 삼성전자 주식회사 라이프 싸이클을 증가시킬 수 있는 저장 장치 및 그 동작 방법
US8750045B2 (en) 2012-07-27 2014-06-10 Sandisk Technologies Inc. Experience count dependent program algorithm for flash memory
US8856431B2 (en) 2012-08-02 2014-10-07 Lsi Corporation Mixed granularity higher-level redundancy for non-volatile memory
TWI509615B (zh) * 2012-08-03 2015-11-21 Phison Electronics Corp 資料儲存方法、記憶體控制器與記憶體儲存裝置
US9239754B2 (en) 2012-08-04 2016-01-19 Seagate Technology Llc Single read based soft-decision decoding of non-volatile memory
US9329948B2 (en) 2012-09-15 2016-05-03 Seagate Technology Llc Measuring cell damage for wear leveling in a non-volatile memory
US9653184B2 (en) 2014-06-16 2017-05-16 Sandisk Technologies Llc Non-volatile memory module with physical-to-physical address remapping
US10338999B2 (en) 2016-09-02 2019-07-02 International Business Machines Corporation Confirming memory marks indicating an error in computer memory
US10304560B2 (en) * 2016-09-02 2019-05-28 International Business Machines Corporation Performing error correction in computer memory
US10353669B2 (en) 2016-09-02 2019-07-16 International Business Machines Corporation Managing entries in a mark table of computer memory errors
US10297335B2 (en) 2016-09-02 2019-05-21 International Business Machines Corporation Tracking address ranges for computer memory errors
CN110444247A (zh) * 2019-07-31 2019-11-12 至誉科技（武汉）有限公司 存储设备写错误纠错能力的测试装置
CN110459259A (zh) * 2019-07-31 2019-11-15 至誉科技（武汉）有限公司 存储设备写错误纠错能力的测试方法、系统及存储介质

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2840305C3 (de) * 1978-09-15 1981-03-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Programmieren von wiederholt beschreibbaren Festwertspeichern
DE3200872A1 (de) * 1982-01-14 1983-07-21 Sartorius GmbH, 3400 Göttingen Elektronische waage
US4530054A (en) * 1982-03-03 1985-07-16 Sperry Corporation Processor-addressable timestamp for indicating oldest written-to cache entry not copied back to bulk memory
NL8202365A (nl) * 1982-06-11 1984-01-02 Philips Nv Serie-parallel-serie schuifregistergeheugen, hetwelk redundante parallelgeschakelde opslagregisters bevat, en afbeeldtoestel, voorzien van een zodanig georganiseerd beeldgeheugen.
JP3099046B2 (ja) 1985-08-09 2000-10-16 株式会社日立製作所 不揮発性記憶装置
US4899272A (en) * 1987-10-23 1990-02-06 Chips & Technologies, Inc. Addressing multiple types of memory devices
US4924375A (en) * 1987-10-23 1990-05-08 Chips And Technologies, Inc. Page interleaved memory access
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
JPH01235075A (ja) * 1988-03-14 1989-09-20 Fuji Xerox Co Ltd ディスクメモリ制御装置
JPH01251372A (ja) 1988-03-30 1989-10-06 Toshiba Corp 磁気ディスク制御装置
KR0135082B1 (ko) 1988-04-28 1998-04-20 오가 노리오 정보 기억방법 및 그 장치
JPH01292455A (ja) 1988-05-20 1989-11-24 Hitachi Ltd 半導体記億装置
US5043940A (en) * 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
JPH02189790A (ja) * 1989-01-18 1990-07-25 Mitsubishi Electric Corp ダイナミック形半導体記憶装置
US5535328A (en) 1989-04-13 1996-07-09 Sandisk Corporation Non-volatile memory system card with flash erasable sectors of EEprom cells including a mechanism for substituting defective cells
DE69033438T2 (de) 1989-04-13 2000-07-06 Sandisk Corp., Santa Clara Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JPH0325798A (ja) * 1989-06-23 1991-02-04 Ricoh Co Ltd Ｅｅｐｒｏｍを使用した記憶装置
JPH0330034A (ja) * 1989-06-28 1991-02-08 Hitachi Ltd 光デイスクフアイル管理方法
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM
JPH03127116A (ja) 1989-10-12 1991-05-30 Nec Corp 増設メモリ装置
JPH03283094A (ja) * 1990-03-29 1991-12-13 Nec Corp 半導体メモリ
JPH0498342A (ja) * 1990-08-09 1992-03-31 Mitsubishi Electric Corp 半導体記憶装置
JPH04123243A (ja) * 1990-09-14 1992-04-23 Toshiba Corp データ書込装置
US5222109A (en) * 1990-12-28 1993-06-22 Ibm Corporation Endurance management for solid state files
GB2251323B (en) * 1990-12-31 1994-10-12 Intel Corp Disk emulation for a non-volatile semiconductor memory
GB2251324B (en) * 1990-12-31 1995-05-10 Intel Corp File structure for a non-volatile semiconductor memory
JP3137993B2 (ja) * 1991-01-16 2001-02-26 富士通株式会社 不揮発性半導体記憶装置
US5295255A (en) * 1991-02-22 1994-03-15 Electronic Professional Services, Inc. Method and apparatus for programming a solid state processor with overleaved array memory modules
US5663901A (en) 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
FR2675287B1 (fr) * 1991-04-15 1993-06-18 Bull Sa Circuit coupleur et son utilisation dans une carte et procede.
JP2582487B2 (ja) * 1991-07-12 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体メモリを用いた外部記憶システム及びその制御方法
JP2549034B2 (ja) * 1991-07-22 1996-10-30 株式会社メルコ 記憶装置
US5245572A (en) * 1991-07-30 1993-09-14 Intel Corporation Floating gate nonvolatile memory with reading while writing capability
US6230233B1 (en) * 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US5359569A (en) * 1991-10-29 1994-10-25 Hitachi Ltd. Semiconductor memory
US5263003A (en) * 1991-11-12 1993-11-16 Allen-Bradley Company, Inc. Flash memory circuit and method of operation
JP3231832B2 (ja) * 1991-11-26 2001-11-26 株式会社日立製作所 フラッシュメモリを記憶媒体とした半導体ディスク
JP3122201B2 (ja) * 1991-11-30 2001-01-09 株式会社東芝 メモリカード装置
US5267218A (en) * 1992-03-31 1993-11-30 Intel Corporation Nonvolatile memory card with a single power supply input
US5341489A (en) * 1992-04-14 1994-08-23 Eastman Kodak Company Memory card with programmable interleaving
KR0121800B1 (ko) * 1992-05-08 1997-11-22 사또오 후미오 메모리 카드장치
US5280447A (en) * 1992-06-19 1994-01-18 Intel Corporation Floating gate nonvolatile memory with configurable erasure blocks
JP3328321B2 (ja) 1992-06-22 2002-09-24 株式会社日立製作所 半導体記憶装置
US5437020A (en) * 1992-10-03 1995-07-25 Intel Corporation Method and circuitry for detecting lost sectors of data in a solid state memory disk
JP3105092B2 (ja) * 1992-10-06 2000-10-30 株式会社東芝 半導体メモリ装置
US5341339A (en) * 1992-10-30 1994-08-23 Intel Corporation Method for wear leveling in a flash EEPROM memory
KR970008188B1 (ko) 1993-04-08 1997-05-21 가부시끼가이샤 히다찌세이사꾸쇼 플래시메모리의 제어방법 및 그것을 사용한 정보처리장치
US5696917A (en) 1994-06-03 1997-12-09 Intel Corporation Method and apparatus for performing burst read operations in an asynchronous nonvolatile memory
US5737748A (en) 1995-03-15 1998-04-07 Texas Instruments Incorporated Microprocessor unit having a first level write-through cache memory and a smaller second-level write-back cache memory
US5734887A (en) * 1995-09-29 1998-03-31 International Business Machines Corporation Method and apparatus for logical data access to a physical relational database
US5696929A (en) 1995-10-03 1997-12-09 Intel Corporation Flash EEPROM main memory in a computer system
KR100359414B1 (ko) * 1996-01-25 2003-01-24 동경 엘렉트론 디바이스 주식회사 데이타독출/기록방법및그를이용한메모리제어장치및시스템
JP3127116B2 (ja) 1996-03-05 2001-01-22 みかど化工株式会社 農業用フィルム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7779227B2 (en) 2006-08-18 2010-08-17 Realtek Semiconductor Corp. Memory management apparatus and method for optical storage system

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US5644539A (en) 1997-07-01
DE69227499D1 (de) 1998-12-10
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