WO2004068913A1 - 発光素子およびその作製方法 - Google Patents
発光素子およびその作製方法 Download PDFInfo
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- WO2004068913A1 WO2004068913A1 PCT/JP2004/000455 JP2004000455W WO2004068913A1 WO 2004068913 A1 WO2004068913 A1 WO 2004068913A1 JP 2004000455 W JP2004000455 W JP 2004000455W WO 2004068913 A1 WO2004068913 A1 WO 2004068913A1
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- organic compound
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- compound layer
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- emitting element
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
Definitions
- the present invention relates to an organic light-emitting element having an anode, a cathode, and a film containing an organic compound capable of emitting light by applying an electric field (hereinafter, referred to as an “organic compound film”) and a method for manufacturing the same.
- organic compound film a film containing an organic compound capable of emitting light by applying an electric field
- An organic light-emitting device is a device that emits light when an electric field is applied.
- the light emission mechanism is such that by applying a voltage across the organic compound film between the electrodes, the electrons injected from the cathode and the holes injected from the anode recombine in the organic compound film, and the excited state It is said to form molecules (hereinafter referred to as "molecular excitons") and emit energy when the molecular excitons return to the ground state.
- the organic compound film is usually formed as a thin film having a thickness of less than 1 m.
- the organic light-emitting device is a self-luminous device in which the organic compound film itself emits light, there is no need for a backlight as used in conventional liquid crystal displays.
- the great advantage is that the organic light-emitting device can be manufactured to be extremely thin and lightweight.
- carriers are injected into an organic compound film of about 100 to 20 O nm.
- the time from recombination to recombination is on the order of tens of nanoseconds, considering the carrier mobility of the organic compound film, and is on the order of the order of microseconds, including the process from carrier recombination to light emission. Leads to luminescence. Therefore, one of the features is that the response speed is extremely fast.
- the organic light-emitting device is a carrier-injection light-emitting device, it can be driven by a DC voltage and is less likely to generate noise.
- the driving voltage first, the thickness of the organic compound film should be a uniform ultra-thin film of about 10 Onm, and the electrode material should be selected so as to reduce the carrier injection barrier to the organic compound film. In this way, sufficient luminance of 100 cd / m 2 was achieved at 5.5 V (for example, see Non-Patent Document 1).
- Organic light-emitting devices are attracting attention as next-generation flat panel display devices because of their characteristics such as thinness and lightness, high-speed response, and low-voltage DC drive.
- it since it is a spontaneous emission type and has a wide viewing angle, it has relatively good visibility, and is considered to be effective as an element used for a display screen of a portable device.
- the structure of the organic light-emitting device shown in Document 1 is as follows. First, as a method of reducing the carrier injection barrier for the organic compound film, a Mg: Ag alloy having a low work function and relatively stable is used. It improves the injection of electrons into the cathode. This makes it possible to inject a large amount of carrier into the organic compound film.
- a hole transport layer composed of an aromatic diamine compound and an electrode composed of a tris (8-quinolinolato) monoaluminum complex (hereinafter referred to as “A 1 Q 3”) are used.
- a 1 Q 3 8-quinolinolato monoaluminum complex
- Non-Patent Document 1 if a single heterostructure as described in Non-Patent Document 1 is formed, electrons injected from the cathode are blocked at the interface between the hole transport layer and the electron transport light emitting layer, and confined in the electron transport light emitting layer. . Therefore, recombination of carriers is efficiently performed in the electron-transporting light-emitting layer, resulting in efficient light emission.
- the organic light-emitting device in Non-Patent Document 1 is characterized by a function separation in which hole transport is performed by a hole transport layer, and electron transport and light emission are performed by an electron-transporting light-emitting layer.
- the concept of functional separation has been further developed, and methods have been proposed in which three different functions, hole transport, electron transport, and luminescence, are performed by different materials. With this method, a material having low carrier transportability but high luminous efficiency can be used as the luminescent material, and accordingly, the luminous efficiency of the organic light emitting device is also improved.
- a typical method is doping of a dye (for example, see Non-Patent Document 2). That is, as shown in FIG.
- the dye 1 in a single heterostructure provided with a hole transport layer 101 and an electron transport layer 102 (which is also a light emitting layer), the dye 1 By doping 0.3, the emission color of the dye 103 in the boundary region, which is the emission region, is increased. What you get.
- the dye 103 may be doped on the hole transport layer 101 side.
- Fig. 3 (b) there is also a technique of a Dakale hetero structure (three-layer structure) in which a light emitting layer is sandwiched between a hole transport layer and an electron transport layer (see, for example, Non-Patent Document 3). .).
- holes are injected from the hole transport layer 106 to the light-emitting layer 105, and electrons are injected from the electron transport layer 107 to the light-emitting layer 105.
- Light is emitted in the emission color of the material used for the layer 105.
- Non-Patent Document 3 (Non-Patent Document 3)
- the method of doping dye materials is particularly effective for extending the life (see, for example, Patent Document 1).
- the factors include smooth energy transfer to the host material and improvement of the film quality of the host material.
- the hole transport layer is doped with rubrene to extend the life of the device.
- the light-emitting device of Patent Document 1 has a structure as shown in FIG. 2 in which the electron transport layer and the hole transport layer are each doped with a dye material because the hole transport layer is also doped with the dye material.
- the light emitting region exists in the boundary region 203 between the hole transport layer 201 and the electron transport layer 202. Therefore, the two types of dye materials, the first doping material and the second doping material, existing in the boundary region 203 emit light.
- the two types of dye materials, the first doping material and the second doping material, existing in the boundary region 203 emit light.
- a highly pure emission color cannot be obtained. It is not preferable to use elements emitting at these different wavelengths in a full power organic light emitting device that requires light of high color purity for each of red, green and blue.
- An object of the present invention is to provide a highly reliable, long-life, highly reliable light-emitting element that emits light with high color purity and emits light stably during continuous driving.
- the light emitting device of the present invention comprises a hole transporting material, an electron transporting material, a first impurity (first doping).
- a light emitting device in which an organic compound film containing a material and a second impurity (a second doping material) is provided between an anode and a cathode, the organic compound film is formed from the anode side with the hole transport material.
- an electron transport region composed of the following.
- the hole transport region is a region that does not include a doping material and is substantially composed of only a hole transport material. Therefore, by providing the hole transport region, it is possible to block the injection of electrons into the first mixed region, and it is possible to prevent the injection of electrons and holes in the first mixed region including the first doping material. There is no recombination. Elimination of recombination in the first mixed region results in no emission of the first doping material. As a result, in the present invention, it is possible to emit light only with the second doping material, and it is possible to produce a light emitting element that can obtain only desired light emission by using a light emitting material to be emitted as the second doping material. It becomes possible. Further, according to the present invention, a longer light emission can be realized as compared with an organic light emitting device in which the first doping material is not doped with the hole transport material, and stable light emission can be obtained during continuous driving.
- the method for manufacturing a light-emitting element of the present invention includes a method for manufacturing a light-emitting element in which an organic compound film containing a hole transport material, an electron transport material, a first impurity and a second impurity is provided between an anode and a cathode.
- a first mixed region containing the hole transport material and the first impurity is formed in contact with the anode, and the organic compound film is in contact with the first mixed region.
- An electron transport region made of the electron transport material is formed in contact with the region.
- the first impurity (first doping material) or the second impurity (second doping material) may be a dye material.
- the ratio of the hole transport region to the total film thickness of the mixed region and the hole transport region is preferably 10% or more.
- doping the first impurity (the first doping material) with a few wt% to the hole transport material has an effect of extending the life as compared to a non-doped element.
- the first doping material is suitably a polycyclic compound such as rubrene, and its concentration is preferably between 0.1wt% and 1wt%.
- an electric device using the light emitting device including the light emitting element of the present invention as described above as a display portion or the like is highly useful because of high visibility and reliability.
- a light-emitting device in this specification refers to an image display device using an organic light-emitting element as a light-emitting element.
- a connector such as an anisotropic conductive film (ACF) or TAB (Tape Automated Bounding) tape or TCP (Tape Carrier Packege) is connected to the organic light emitting element.
- ACF anisotropic conductive film
- TAB Tape Automated Bounding tape
- TCP Tape Carrier Packege
- Attached module Light-emitting devices include modules with a printed wiring board at the tip of a tape, TAB tape, or TCP, or modules with an IC (integrated circuit) mounted directly on an organic light-emitting element by the COG (Chip on Glass) method. Shall be included.
- an electric device using the light-emitting device including the light-emitting element of the present invention as a display portion or the like has high visibility and reliability and is extremely useful.
- FIG. 1 shows the structure of the organic light emitting device of the present invention.
- FIG. 2 shows an example of the structure of a conventional organic light emitting device doped with two kinds of dyes.
- FIG. 3 shows an example of the structure of a conventional organic light-emitting device doped with one type of dye.
- FIG. 4 is a diagram of a vapor deposition apparatus used to manufacture the device in Example 1.
- FIG. 5 shows an EL spectrum of a light emitting device for comparing the present invention with a conventional one.
- FIG. 6 is a graph showing the relationship between the constant current driving time of the light emitting element and the normalized luminance for comparing the present invention with the conventional one.
- FIG. 7 is a top view and a cross-sectional view showing the second embodiment.
- FIG. 8 is a diagram illustrating an example of an electronic device (Example 3).
- FIG. 9 is a diagram illustrating an example of an electronic device (Example 3). BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 shows an example of a light emitting device of the present invention.
- An organic compound film (conductor layer) sandwiched between an anode 301 and a cathode 302 has a hole from the anode 301 to the cathode 302 and a hole.
- First mixed region containing both the transport material and the first doping material 303, positive only with hole transport material It has a structure of an L transport region 304, a second mixed region 305 containing both an electron transport material and a second doping material, and an electron transport region 306 made of only an electron transport material.
- L transport region 304 a structure of an L transport region 304, a second mixed region 305 containing both an electron transport material and a second doping material, and an electron transport region 306 made of only an electron transport material.
- the organic light emitting element only needs to have at least one of the first electrode and the second electrode transparent in order to extract light emission.
- ITO is used as a transparent electrode.
- the S i 0 2 Other I TO 0 1 ⁇ :. L 0 that is added wt%, 0.. 1 to the Z n O to I TO: may be used after adding LO wt%. 1 chome 0 to 3 1 0 2 0.1 to 1 have been added O wt% is to increase the flatness of the ITO surface, it is possible to prevent the cane one bets between the upper and lower electrodes.
- An element structure in which a transparent first electrode (anode) is formed on a substrate and light is extracted from the first electrode (anode) is generally used.
- a structure in which light is extracted from the side opposite to the substrate is also applicable.
- the light emitted from the organic light emitting device according to the present invention may be of any color.
- a full-color light-emitting device is manufactured, a plurality of light-emitting elements that emit light with different center wavelengths may be combined.
- This method is preferable for applying the present invention.
- a method of combining a color filter with an organic light-emitting element that emits white light, a method of combining a color conversion layer with an organic light-emitting element that emits blue light, and the like may be used.
- the present invention is preferably applied to a method of combining three primary colors of light (blue, red, and green).
- a hole injection layer made of a hole injection material between the anode and the first mixed region; A structure in which an electron injection layer made of an electron injection material is formed between the two mixed regions may be employed.
- suitable materials such as a hole injection material, a hole transport material, an electron transport material, an electron injection material, and a light emitting material are listed below.
- the material used for the light emitting element of the present invention is not limited to these.
- a porphyrin-based compound is effective as long as it is an organic compound, and examples thereof include phthalocyanine and copper phthalocyanine (hereinafter, referred to as “CuPC”).
- High molecular compounds include polyvinyl carbazole, etc., but as mentioned earlier, there is also a material obtained by chemically doping a shared conductive high molecular compound, and polystyrene sulfonate is doped. Examples include polyethylene dioxythiophene, polyaniline and polypyrrole doped with a Lewis acid such as iodine.
- a polymer compound of an insulator is also effective in flattening the anode, such as polyimide.
- inorganic compounds are also used, and examples thereof include a metal thin film such as gold and platinum, and an ultra-thin aluminum oxide film.
- the most widely used hole transporting materials are aromatic amine compounds (ie, those having a benzene ring-nitrogen bond).
- Widely used materials include 4,4'-bis (diphenylamino) biphenyl and its derivatives 4,4,1-bis [N- (3-methylphenyl) -1-N-phenylamino] -biphenyl, 4, 4, 1 bis [N_ (1-naphthyl) 1 N-phenylamino]-biphenyl (hereinafter referred to as "1 NPD").
- a metal complex is often used as an electron transport material.
- Quinoline skeleton or benzoquinoline such as (4-monomethyl-18-quinolinolato) aluminum (hereinafter referred to as “Almq”), bis (10-hydroxybenzo [h] —quinolinato) beryllium (hereinafter referred to as “Bebci”)
- Metal complexes having a skeleton and mixed ligand complexes such as bis (2-methyl-18-quinolinolato)-(4-hydroxy-biphenylyl) -aluminum (hereinafter referred to as “BA1 d3”) .
- bis [2- (2-hydroxyphenyl) -benzoxazolate] zinc hereinafter referred to as ⁇ ( ⁇ OX) 2
- bis [2- (2-hydroxyphenyl) -benzothiazolate] there is also a metal complex having an oxazole-based or thiazo-based ligand such as zinc (hereinafter referred to as “Zn (BZT) 2 ”).
- the electron injecting material the electron transporting materials described above can be used.
- an ultra-thin film of an insulator such as an alkali metal such as lithium fluoride, a logenide, or an alkali metal oxide such as lithium oxide is often used.
- an alkali metal complex such as lithium acetyl acetonate-8-quinolinolatolithium is effective.
- fluorescent dyes As the light emitting material, Alq3, Almq, BeBq, BA1q, ZN
- various fluorescent dyes used as the second doping material are effective.
- fluorescent dyes include green quinacridone, 2,9-dimethylquinacridone, benzo- [h] -benzo- [7,8] monoquinone [2,3-b] -acridine-1,7,16-dimethyl-1 And quinacridone derivatives such as 18-dihydro (hereinafter referred to as DMNQ A), blue perylene, red-orange 41- (dicyanmethylene) -2-methyl-6- (p-dimethylaminostyryl) -14H-pyran, etc.
- a triplet light emitting material is also possible, and a complex containing platinum or iridium as a central metal is mainly used.
- the triplet light-emitting material include tris (2-phenylpyridine) iridium, 2,3,7,8,12,13,17,18-octaethyl- 21 H, 23 H-porphyrin-platinum.
- a rubrene-based polycyclic compound or the like is used, and particularly, rubrene is used as a suitable substance.
- TBT tert_butylperylene
- DDPA 9,10-di (3,5 diphenyl) anthracene
- the vapor deposition apparatus shown in FIG. 4 includes a transfer chamber 401 (included with a transfer port pot 402 for transferring a substrate, a counter substrate, and a metal mask), and a substrate / mask stock chamber 40 connected thereto. 3, pretreatment chamber 404, first organic evaporation chamber 405, second organic evaporation chamber 406, metal evaporation chamber 407, CVD chamber 408, and sealing glass It has a stock room 409 and a sealed room 410.
- the substrate and the metal mask for vapor deposition are charged in the substrate / mask stock room.
- Substrate The mask stock room has an elevator structure (one stage in this example), and each stage has a substrate (12.6.6 mm X 12.6 mm in this example). Yes) or as a mask. Up to a total of 10 substrates and masks can be stored.
- the remaining one-stage plate is a heating stage for heating the plate, so it should be left empty when putting in. In the manufacturing apparatus of this embodiment, the direction of the substrate is always face-down.
- the sealed glass stock room has an all-in-one structure (in this example, 10 stages), and each stage has a pretreatment (typically, drying to absorb moisture inside and outside the panel).
- a pretreatment typically, drying to absorb moisture inside and outside the panel.
- X I 26.6 mm is stored up to 10 sheets.
- the facing substrate is always face-up.
- the film forming process is finished on all the substrates that have been input first. This is called a “deposition mode”. After the vapor deposition mode ends, the process enters a “sealing mode” in which the substrate and the counter substrate are bonded.
- the vapor deposition mode will be described using an example in which seven substrates and three masks are used.
- the transfer chamber is evacuated to a high vacuum in advance.
- the transfer chamber is always kept at a high vacuum.
- the mask is transported to the first organic evaporation chamber, the second organic evaporation chamber, and the metal evaporation chamber.
- the substrate is transferred to the pretreatment chamber.
- substrate heating in vacuum and plasma processing for example, O 2 plasma processing
- the substrate can be heated even at the base heating stage of the substrate ⁇ ⁇ ⁇ mask stock chamber, and may be performed here to improve the throughput.
- substrate vacuum heating is performed in the substrate 'mask stock chamber after the exhaust. That is, the substrate is transferred from the substrate / mask stock chamber to the substrate heating stage in the substrate / mask stock chamber via the transfer chamber, and the heater is heated. After the heating is completed, the substrate is transferred to the pre-processing chamber via the transfer chamber and cooled (that is, waiting in the pre-processing chamber), so that the next substrate is vacuum-heated in the substrate / mask stock chamber even during substrate cooling. It is possible to improve throughput.
- the substrate is transferred from the pretreatment chamber to the second organic vapor deposition chamber via the transfer chamber, and after the alignment process using two CCD cameras with the mask is completed, the hole injection layer CuPc is set to 20 nm.
- the material is evaporated from a fixed evaporation source (eight in this embodiment), and a film is formed on the upper substrate.
- the substrate is rotating, thereby improving the in-plane distribution of the film thickness formed on the substrate.
- a hole transport layer is formed.
- a 20 nm mixed region of 5% by weight rubrene doped in NPD is formed by co-evaporation. After forming a mixed area of NPD and rubrene, ⁇ - ⁇ ⁇ ⁇ An undoped layer composed of only PD is continuously formed to a thickness of 20 nm.
- the substrate is transferred to the first organic deposition chamber via the transfer chamber. Except for the number of evaporation sources being six, the other mechanisms and the film formation processing method are exactly the same as those of the second organic evaporation chamber.
- A1q3 which also functions as a light emitting layer and an electron transport layer, is formed.
- a very small amount for example, about 0.5 wt%) of DMNQA is dropped by the co-evaporation method. This doping significantly improves the panel life of the completed panel. Switching from the light-emitting layer to the electron transport layer can be performed smoothly simply by closing the deposition source shut-down unit attached to the DMNQA deposition source. In this way, the light emitting layer is formed to 37.5 nm, and the electron transport layer is formed to 37.5 nm.
- the substrate is transferred to the metal deposition chamber via the transfer chamber.
- the electron injection layer C a F 2 is formed to 1 nm
- the cathode A 1 is formed to 200 nm.
- the resistance heating method resistive heating evaporation source has 12 points of 6 points X2, total of 12 points
- EB method EB evaporation source has 6 points of XI, total 6 points exist
- the mechanism other than the evaporation source and the method of forming the layers are exactly the same as those of the first organic evaporation chamber and the second organic evaporation chamber.
- a CVD film can be formed on the entire surface of the substrate.
- plasma processing using a plurality of gases is also possible.
- a silicon nitride film as a protective film is formed on the cathode A 1, or perform more gas using plasma treatment as a pretreatment for the substrate (e.g., A r + ⁇ 2 plasma treatment), May be performed.
- the substrate is returned to the starting point substrate-mask stock room via the transfer chamber.
- the above shows a series of processes necessary to obtain a monochromatic panel that emits green light, it is not particularly limited.
- the deposition mode is terminated, and the manufacturing apparatus continues to enter the sealing mode.
- Vent treatment is the process of re-injecting gas into the chamber whose pressure has been reduced by exhaust gas and returning it to normal pressure.
- nitrogen is used as the gas to be injected in the venting process.
- sealing glass stock chamber deterioration of the sealant and desiccant can be suppressed by performing the setting of the counter substrate after pretreatment immediately before sealing.
- the sealing glass stock chamber is evacuated and vented a plurality of times (two times in this embodiment), so that the water concentration in the transfer chamber during the sealing mode can be prevented from lowering, and the sealing chamber can be opposed. It can also remove bubbles from the sealant applied to the substrate.
- the sealing process should be performed immediately after the last venting of the sealed glass stock chamber. This includes venting the transfer chamber and substrate mask stock chamber, charging the counter substrate into the sealed glass stock chamber, and venting the sealed glass stock chamber. This can be achieved by the operator appropriately setting the timing of each of the processes.
- the substrate is transferred from the substrate / mask stock chamber and the opposing substrate is transferred from the sealing glass stock chamber to the sealing chamber via the transfer chamber.
- the sealing chamber After the alignment (positioning) of the substrate and the opposing substrate is completed by aligning the external end faces, the substrate and the opposing substrate are bonded and sealed by applying pressure. Further, UV irradiation is performed from the opposite substrate side (lower side) to cure the sealant (in this embodiment, a UV curable resin). At this time, it is possible to selectively apply UV irradiation only to the sealant using a light shielding mask.
- the light-shielding mask has a Cr film formed on quartz glass, and cannot be transported in the transport port pot of the transport chamber. Therefore, an operator directly sets the sealing chamber. Shall be.
- the substrate and the opposing substrate become an integrated panel.
- This panel is transferred from the sealing chamber to the substrate and mask stock chamber via the transfer chamber.
- the same processing is performed for the next substrate and the opposite substrate.
- seven panels are stored in the substrate / mask stock room, and the sealing mode ends.
- the completed panel can be removed from the substrate / mask stock room.
- a series of processes in the vapor deposition mode and the sealing mode described above can be automatically performed by controlling the control system.
- a series of processing for each substrate is automatically performed according to this registered information simply by sending a signal to start processing.
- Example 1 A hole transport layer was prepared in the same manner as in Example 1 except that a layer doped with 5 wt% of rubrene in ⁇ -NPD was formed to a thickness of 40 nm by co-evaporation without forming an undoped layer.
- a light-emitting element was manufactured in the same manner as described above.
- FIG. 5 shows the EL spectra of the devices fabricated in Example 1 and Comparative Example 1 at a current density of 125 mAZm 2 .
- the EL spectrum measured the light emission from the substrate side for each device.
- a spectrum 501 caused by DMNQA doped into the electron transport layer was observed.
- a spectrum 503 including a peak caused by rubrene doped in the hole transport layer was observed.
- the light emitting device manufactured in Comparative Example 1 emits light of two types of materials, and Example 1 emits light of only one type of material. Therefore, it was confirmed that it is better to use the light-emitting element manufactured in Example 1 in order to obtain a high-purity luminescent color of only a desired wavelength.
- a light-emitting element was manufactured in the same manner as in Example 1 except that a mixed region was not formed and only —NPD was formed to have a thickness of 40 nm.
- FIG. 5 shows the EL spectra of the devices manufactured in Example 1 and Comparative Example 2 at a current density of 125 mAZm 2.
- the EL spectrum measured the light emission from the substrate side for each device.
- spectra 501 and 502 caused by DMNQA doped in the electron transport layer were observed.
- a light-emitting element manufactured in Example 1 and Comparative Example 2 shows a case that has a constant current driving at a current value of the initial luminance 1 0 0 0 c DZM 2, the luminance deterioration with lapse of time in Fig.
- the light-emitting element manufactured in Example 1 is W
- the light-emitting element manufactured in Example 1 of the present invention was a light-emitting element having a high emission color and a long life.
- Example 1 a light-emitting device having the electroluminescent element of the present invention in a pixel portion will be described with reference to FIGS. 7A is a top view illustrating the light emitting device, and FIG. 7B is a cross-sectional view of FIG. 7A taken along a line BB ′.
- Reference numeral 701 indicated by a dotted line denotes a drive circuit unit (source-side drive circuit), 702 denotes a pixel unit, and 703 denotes a drive circuit unit (gate-side drive circuit).
- Reference numeral 704 denotes a sealing substrate, reference numeral 705 denotes a sealant, and an inner side 707 surrounded by the sealant 705 is a space.
- Reference numeral 708 denotes wiring for transmitting signals input to the source-side drive circuit 701 and the gate-side drive circuit 703, and a video signal, a clock signal, a start signal, a reset signal, and the like from the external input terminal FPC 709. Receive. Although only the FPC is shown here, a printed wiring board (hereinafter referred to as “PWB”) may be attached to the FPC.
- PWB printed wiring board
- the light emitting device in the present specification includes not only the light emitting device main body but also a state in which an FPC or a PWB is attached thereto.
- a driving circuit section and a Hi element section are formed on the element substrate 710.
- a source side driving circuit 701 as a driving circuit section and a pixel section 702 are shown.
- the source side driver circuit 701 is a CMOS circuit formed by combining an n-channel TFT 723 and a p-channel TFT 724.
- the TFT forming the driving circuit may be formed by a known CMOS circuit, a PMOS circuit or an NMOS circuit. good.
- a driver integrated with a driver circuit formed on a substrate is shown; however, it is not always necessary to form the driver circuit.
- the pixel portion 702 is formed by a plurality of pixels including a switching TFT 711, a current control TFT 712, and a first electrode 711 electrically connected to a drain thereof. .
- an insulator 714 is formed to cover an end of the first electrode 713.
- a curved surface having a curvature is formed at the upper end or the lower end of the object 7 14.
- a positive photosensitive acrylic is used as the material of the insulator 714, only the upper end of the material 714 may have a curved surface with a radius of curvature (0.2 m to 3 m). preferable.
- the insulator 714 either a negative type which becomes insoluble in an etchant by photosensitive light or a positive type which becomes soluble in an etchant by light can be used.
- an organic compound layer 7 16 and a second electrode 7 17 are formed, respectively.
- a material having a large work function as a material used for the first electrode 713 functioning as an anode.
- a material having a large work function for the first electrode 713 functioning as an anode.
- single-layer films such as ITO film, indium zinc oxide film, titanium nitride film, chromium film, tungsten film, Zn film, Pt film, etc.
- Lamination a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film or the like can be used.
- a good uniform contact with a low resistance as a wiring can be obtained, and further, it can function as an anode.
- the organic compound layer 716 the structure of the embodiment or the example 1 of the present invention is used.
- the structure of the embodiment or the example 1 of the present invention is used.
- the second electrode (cathode) 7 17 formed on the organic compound layer 7 16 The material, a material having a low work function (A 1, Ag, L i , Ca , or an alloy MgAg,, Mg I n, A 1 L it, CaF 2 or C a N,) may be used. Note that when light generated in the electroluminescent layer 716 is transmitted through the second electrode 717, a metal thin film having a reduced EJ ⁇ and a transparent conductive film (ITO, It is preferable to use a laminate with an indium zinc oxide alloy, zinc oxide and the like.
- the organic light emitting element 718 is provided in the space 707 surrounded by the element substrate 701, the sealing substrate 704, and the sealing agent 705. It has a structure.
- the space 707 is not only filled with an inert gas (such as nitrogen or argon), but also includes a structure filled with a sealant 705.
- an epoxy resin is preferably used for the sealant 705. It is preferable that these materials are as impermeable as possible to moisture and oxygen.
- a plastic substrate made of polyimide, polyamide, acrylic resin, epoxy resin, PES, PC, PET, PEN, or the like can be used in addition to a glass substrate or a quartz substrate.
- the light emitting device of the present invention described in the above embodiment has the advantage that the color purity of the emitted light is high and the light emission is long. Therefore, an electric device including the light emitting device as a display unit or the like has high visibility and reliability as compared with the related art, and is extremely useful.
- modules active matrix type liquid crystal module, active matrix type EL module, active matrix type EC module
- the light emitting device including the light emitting element manufactured according to the present invention, and they are further incorporated.
- Electronic devices can be manufactured.
- Such electronic devices include video cameras, digital cameras, head-mounted displays (goggle-type displays), car navigation systems, projectors, car stereos, personal computers, and personal digital assistants (mobile computers, mobile phones or e-books). Etc.). Examples of these are shown in Figs. Figure 8 (A) shows a mobile phone, with the main body 81, audio output section 802, audio input section 80
- FIG. 8B illustrates a portable book (e-book), which includes a main body 808, display portions 809, 810, a storage medium 811, an operation switch 812, an antenna 813, and the like.
- FIG. 8C shows a display, which includes a main body 814, a support 815, a display section 816, and the like.
- a display By manufacturing a display using the light emitting device including the light emitting element of the present invention for the display portion 8 16, a display having high visibility and high reliability can be realized.
- the display shown in Fig. 8 (C) is a small, medium or large display, for example, a screen size of 5 to 20 inches. Further, in order to form a display portion of such a size, it is preferable to use a substrate having one side of lm and mass-produce it by performing multi-paneling.
- FIG. 9A shows a personal computer, which includes a main body 901, an image input unit 902, a display unit 903, a keyboard 904, and the like.
- FIG. 9B shows a video camera, which includes a main body 905, a display portion 906, an audio input portion 907, an operation switch 908, a battery 909, an image receiving portion 910, and the like.
- FIG. 9C shows a mobile computer (mobile computer) including a main body 911, a camera section 912, an image receiving section 913, an operation switch 914, a display section 915, and the like.
- a mobile computer including a main body 911, a camera section 912, an image receiving section 913, an operation switch 914, a display section 915, and the like.
- FIG. 9D shows a player using a recording medium on which a program is recorded (hereinafter, referred to as a recording medium), and includes a main body 916, a display unit 917, a speaker unit 918, a recording medium 919, an operation switch 920, and the like.
- the player can use a DVD (Digital Versatile Disc), a CD, or the like as a recording medium, and can perform music appreciation, movie appreciation, games, and in-net entertainment.
- a DVD Digital Versatile Disc
- CD Compact Disc
- FIG. 9E shows a digital camera, which includes a main body 9 21, a display section 9 22, an eyepiece section 9 23, an operation switch 9 24, an image receiving section (not shown), and the like.
- the applicable range of the present invention is extremely wide, and the present invention can be applied to methods for manufacturing electronic devices in all fields. Further, the electronic apparatus of the present embodiment can be realized by using a configuration formed by any combination of the embodiment mode and Embodiment 1 or 2.
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Abstract
Description
Claims
Priority Applications (2)
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CN2004800029292A CN1742519B (zh) | 2003-01-28 | 2004-01-21 | 发光元件及其制作方法 |
JP2004544181A JPWO2004068913A1 (ja) | 2003-01-28 | 2004-01-21 | 発光素子およびその作製方法 |
Applications Claiming Priority (2)
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JP2003019545 | 2003-01-28 | ||
JP2003-019545 | 2003-01-28 |
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WO2004068913A1 true WO2004068913A1 (ja) | 2004-08-12 |
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PCT/JP2004/000455 WO2004068913A1 (ja) | 2003-01-28 | 2004-01-21 | 発光素子およびその作製方法 |
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US (3) | US7053402B2 (ja) |
JP (1) | JPWO2004068913A1 (ja) |
CN (1) | CN1742519B (ja) |
WO (1) | WO2004068913A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006073272A (ja) * | 2004-08-31 | 2006-03-16 | Nissan Motor Co Ltd | 機能性薄膜素子、機能性薄膜素子の製造方法及び機能性薄膜素子を用いた物品 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7622200B2 (en) * | 2004-05-21 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element |
JP2010102994A (ja) * | 2008-10-24 | 2010-05-06 | Hitachi Displays Ltd | 有機エレクトロルミネッセンス装置 |
TW201228066A (en) * | 2010-12-31 | 2012-07-01 | Au Optronics Corp | Organic electroluminescent device |
CN109449301B (zh) * | 2018-09-19 | 2021-11-09 | 云谷(固安)科技有限公司 | Oled显示器件的蒸镀方法、oled显示器件及蒸镀设备 |
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JP2002324673A (ja) * | 2001-02-22 | 2002-11-08 | Semiconductor Energy Lab Co Ltd | 有機発光素子および前記素子を用いた表示装置 |
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SG59953A1 (en) | 1993-03-26 | 1999-02-22 | Sumitomo Electric Industries | Organic electroluminescent elements |
EP0712916B1 (en) | 1994-05-26 | 2003-05-07 | Sumitomo Electric Industries, Ltd | Organic electroluminescent elements |
JP3507132B2 (ja) * | 1994-06-29 | 2004-03-15 | 株式会社日立製作所 | フラッシュメモリを用いた記憶装置およびその記憶制御方法 |
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WO1998008360A1 (fr) | 1996-08-19 | 1998-02-26 | Tdk Corporation | Dispositif electroluminescent organique |
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2004
- 2004-01-21 WO PCT/JP2004/000455 patent/WO2004068913A1/ja active Application Filing
- 2004-01-21 JP JP2004544181A patent/JPWO2004068913A1/ja not_active Withdrawn
- 2004-01-21 CN CN2004800029292A patent/CN1742519B/zh not_active Expired - Fee Related
- 2004-01-27 US US10/766,170 patent/US7053402B2/en not_active Expired - Fee Related
-
2006
- 2006-04-24 US US11/409,898 patent/US7326096B2/en not_active Expired - Fee Related
-
2008
- 2008-01-08 US US12/008,062 patent/US7728518B2/en not_active Expired - Lifetime
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JPH0741759A (ja) * | 1993-03-26 | 1995-02-10 | Sumitomo Electric Ind Ltd | 有機エレクトロルミネッセンス素子 |
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JP2006073272A (ja) * | 2004-08-31 | 2006-03-16 | Nissan Motor Co Ltd | 機能性薄膜素子、機能性薄膜素子の製造方法及び機能性薄膜素子を用いた物品 |
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Also Published As
Publication number | Publication date |
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US7326096B2 (en) | 2008-02-05 |
CN1742519B (zh) | 2010-06-16 |
US20080185599A1 (en) | 2008-08-07 |
CN1742519A (zh) | 2006-03-01 |
US20060244375A1 (en) | 2006-11-02 |
JPWO2004068913A1 (ja) | 2006-05-25 |
US20050056830A1 (en) | 2005-03-17 |
US7728518B2 (en) | 2010-06-01 |
US7053402B2 (en) | 2006-05-30 |
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